JP2009164153A - Through hole filling method for substrate for electronic component - Google Patents

Through hole filling method for substrate for electronic component Download PDF

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JP2009164153A
JP2009164153A JP2007339015A JP2007339015A JP2009164153A JP 2009164153 A JP2009164153 A JP 2009164153A JP 2007339015 A JP2007339015 A JP 2007339015A JP 2007339015 A JP2007339015 A JP 2007339015A JP 2009164153 A JP2009164153 A JP 2009164153A
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hole
substrate
electronic component
metal film
wafer
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Yoshinori Nasu
義紀 那須
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a through-hole filling method for a substrate for electronic components, in which a through-hole can be surely filled. <P>SOLUTION: The through-hole filling method for the substrate for electronic components includes a through-hole boring process of forming the through-hole 13 in a truncated cone shape in a wafer W as the substrate for electronic components by sand blasting or etching, and a metal film forming process of providing a metal film by electrolytic plating on a main surface of the wafer W constituting the substrate for electronic components including a peripheral surface of the through-hole 13 bored in the through-hole boring process, wherein the through-hole 13 is filled with the metal film. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、電子部品に用いられる電子部品用基板に設けられた貫通穴を埋める電子部品用基板の貫通穴埋め方法に関する。   The present invention relates to a method for filling a through hole in an electronic component substrate that fills a through hole provided in an electronic component substrate used for an electronic component.

従来から、絶縁材料を用いた電子部品用基板は、各種電子デバイスに搭載される電子部品の基板体、配線基板、プリント基板、モジュール用基板として用いられている。
これら電子部品用基板は、電子部品の小型化により、その厚さを薄く構成されることがある。例えば、図5(a)に示すような電子部品用基板210は、電子部品用基板210に設けられる金属膜からなる配線パターン214(図5(b)参照)を、一方の主面から他方の主面に引回す際に、貫通穴230を用いた構造が採用されることがある。
この貫通穴230は、例えば、ドリル装置による穿孔(例えば、特許文献1参照)やレーザ装置による穿孔(例えば、特許文献2参照)により設けられる。
このドリル装置やレーザ装置で設けられる貫通穴230の空間形状は、円柱状となる。
また、電子部品用基板10に配線パターン214を設ける際は、電解メッキ法が用いられる場合がある(例えば、特許文献3参照)。この場合、貫通穴230を介して電子部品用基板10の両主面の配線パターン214を引回す際、貫通穴230の内部にも金属を入り込ませ、貫通穴230を金属で埋めた状態とするのが理想的である。
2. Description of the Related Art Conventionally, an electronic component substrate using an insulating material has been used as a substrate body, a wiring substrate, a printed substrate, and a module substrate for electronic components mounted on various electronic devices.
These electronic component substrates may be configured to be thinner due to the miniaturization of electronic components. For example, in the electronic component substrate 210 shown in FIG. 5A, a wiring pattern 214 (see FIG. 5B) made of a metal film provided on the electronic component substrate 210 is changed from one main surface to the other. When drawing around the main surface, a structure using the through hole 230 may be employed.
The through hole 230 is provided by, for example, drilling with a drill device (see, for example, Patent Document 1) or drilling with a laser device (see, for example, Patent Document 2).
The space shape of the through hole 230 provided by the drill device or the laser device is a cylindrical shape.
In addition, when the wiring pattern 214 is provided on the electronic component substrate 10, an electrolytic plating method may be used (see, for example, Patent Document 3). In this case, when the wiring patterns 214 on both main surfaces of the electronic component substrate 10 are routed through the through hole 230, metal is also introduced into the through hole 230 so that the through hole 230 is filled with metal. Is ideal.

特許第3535509号公報Japanese Patent No. 3535509 特許第3441945号公報Japanese Patent No. 3441945 特許第3357875号公報Japanese Patent No. 3357875

しかしながら、貫通穴230の空間形状が円柱状の場合、電解メッキ法でその貫通穴230内部を金属で埋めると、図5(c)に示すように、その貫通穴230内部で金属に囲まれた空間Sが形成されることがある。
このような空間Sが形成された場合、電子部品用基板210を例えば圧電振動子のパッケージを構成する基板体に用いてしまうと、気密に封止した状態しなければならないパッケージ内部がこの空間Sにより外部と連通した状態、つまり、気密が保てない状態となり、前記圧電振動子の正常な動作を保障する事ができなくなる。
また、配線基板、プリント基板、モジュール用基板等に用いると、空間Sに他の部品から出るガス等が溜まり易くなり、金属の腐食や通電不良を起こす原因になり得る。
また、これら基板を積層して用いた場合、空間部分で熱による膨張、収縮が起きてしまい、基板のひび割れの原因となり得る。
However, when the through hole 230 has a cylindrical shape, if the inside of the through hole 230 is filled with metal by an electrolytic plating method, the through hole 230 is surrounded by metal as shown in FIG. A space S may be formed.
When such a space S is formed, if the electronic component substrate 210 is used as a substrate body constituting a package of a piezoelectric vibrator, for example, the inside of the package that must be hermetically sealed is the space S. As a result, the state of communication with the outside, that is, the state in which airtightness cannot be maintained, cannot be ensured for the normal operation of the piezoelectric vibrator.
Further, when used for a wiring board, a printed board, a module board, etc., gas or the like emitted from other components is likely to be accumulated in the space S, which may cause metal corrosion or poor conduction.
In addition, when these substrates are stacked and used, expansion and contraction due to heat occur in the space, which may cause cracks in the substrate.

そこで、本発明では、前記した問題を解決し、貫通穴内を確実に埋めることが出来る電子部品用基板の貫通穴埋め方法を提供することを課題とする。   Therefore, an object of the present invention is to solve the above-described problems and provide a method for filling a through hole in an electronic component substrate that can reliably fill the inside of the through hole.

前記課題を解決するため、本発明は、電子部品用基板の貫通穴埋め方法であって、サンドブラスト又はエッチングにより電子部品用基板に円錐台形状の貫通穴を設ける貫通穴形成工程と、前記貫通穴形成工程により設けられた貫通穴の周面を含む前記電子部品用基板の主面に金属膜を電解メッキにより設ける金属膜形成工程とからなることを特徴とする。   In order to solve the above-mentioned problems, the present invention is a method of filling a through hole in an electronic component substrate, wherein a through hole forming step of providing a frustoconical through hole in the electronic component substrate by sandblasting or etching, and the through hole formation And a metal film forming step of providing a metal film on the main surface of the electronic component substrate including the peripheral surface of the through hole provided by the step by electrolytic plating.

このような電子部品用基板の貫通穴埋め方法によれば、空間形状が円錐台形状となる貫通穴の開口部の小さいほうから先に金属膜が設けられていくので、貫通穴内に金属で囲まれた空間の形成を防ぐことができる。したがって、確実に貫通穴を埋めることができる。
According to such a method for filling a through hole in a substrate for an electronic component, the metal film is provided first from the smaller one of the openings of the through hole having a truncated cone shape, so that the through hole is surrounded by metal. The formation of the open space can be prevented. Therefore, the through hole can be reliably filled.

次に、本発明を実施するための最良の形態(以下、「実施形態」という。)について、適宜図面を参照しながら詳細に説明する。   Next, the best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate.

図1は圧電振動子の一例を示す概念図である。図2はウェハに貫通穴を設けた状態の一例を示す概念図である。図3はウェハに金属膜を設けた状態の一例を示す概念図である。図4は本発明の実施形態に係る電子部品用基板の貫通穴埋め方法の概念図であり(a)がウェハにマスクをした状態を示す概念図であり、(b)がウェハに貫通穴が設けられた状態の一例を示す概念図であり、(c)が電解メッキする部分に下地層を設けた状態の一例を示す概念図であり、(d)が電解メッキにより貫通穴が埋められた状態の一例を示す概念図である。
なお、電子部品用基板を圧電振動子のパッケージに用いられる場合を例にして説明する。
FIG. 1 is a conceptual diagram showing an example of a piezoelectric vibrator. FIG. 2 is a conceptual diagram showing an example of a state in which a through hole is provided in the wafer. FIG. 3 is a conceptual diagram showing an example of a state in which a metal film is provided on the wafer. FIG. 4 is a conceptual diagram of a through hole filling method for an electronic component substrate according to an embodiment of the present invention. FIG. 4A is a conceptual diagram showing a state where a wafer is masked, and FIG. It is a conceptual diagram which shows an example of the obtained state, (c) is a conceptual diagram which shows an example of the state which provided the base layer in the part to electroplate, (d) is the state by which the through-hole was filled by electrolytic plating It is a conceptual diagram which shows an example.
The case where the electronic component substrate is used for a package of a piezoelectric vibrator will be described as an example.

ここで、圧電振動子の構成について説明する。
図1に示す圧電振動子100は、例えば、平面視矩形状の基板体10と、基板体10に搭載される水晶からなる圧電振動素子20と凹部31を有し凹部31内に圧電振動素子20を収納して気密封止する蓋体30とから構成される。
Here, the configuration of the piezoelectric vibrator will be described.
A piezoelectric vibrator 100 shown in FIG. 1 includes, for example, a substrate body 10 having a rectangular shape in plan view, a piezoelectric vibration element 20 made of quartz mounted on the substrate body 10, and a recess 31, and the piezoelectric vibration element 20 in the recess 31. And a lid 30 that hermetically seals and hermetically seals.

蓋体30は、平面視矩形形状に形成されており、一方の主面に凹部31が形成されている。この凹部31を後述する基板体10側に向けて、凹部31内に圧電振動素子20が収納されるように基板体10と接合することで凹部31を気密封止することができる。   The lid body 30 is formed in a rectangular shape in plan view, and a concave portion 31 is formed on one main surface. The concave portion 31 can be hermetically sealed by joining the substrate body 10 so that the concave portion 31 faces the substrate body 10 described later and the piezoelectric vibration element 20 is accommodated in the concave portion 31.

基板体10は、平面視矩形形状に形成されており、その一方の主面側に圧電振動素子20を搭載するための搭載パッド11が2つ一対で設けられている。これら搭載パッド11の面は、基板体10の他方の主面側と平行になるように設けられる。また、他方の主面側にはそれぞれの搭載パッド11と電気的に接続する外部端子12が設けられている。   The substrate body 10 is formed in a rectangular shape in plan view, and two mounting pads 11 for mounting the piezoelectric vibration element 20 are provided on one main surface side thereof. The surfaces of the mounting pads 11 are provided so as to be parallel to the other main surface side of the substrate body 10. Further, external terminals 12 that are electrically connected to the respective mounting pads 11 are provided on the other main surface side.

貫通穴13は、図2に示すように、2つ一対で基板体10に設けられ、搭載パッド11と外部端子12とを電気的に接続する際に用いられる(図1参照)。
この貫通穴13は、蓋体30の凹部31内に位置するように設けられ(図1参照)、後述する配線パターン14が設けられる位置と対応して設けられる。
As shown in FIG. 2, two pairs of through holes 13 are provided in the substrate body 10 and are used when the mounting pads 11 and the external terminals 12 are electrically connected (see FIG. 1).
The through hole 13 is provided so as to be positioned in the recess 31 of the lid 30 (see FIG. 1), and is provided corresponding to a position where a wiring pattern 14 described later is provided.

例えば、図3に示すように、一方の搭載パッド11から離れた位置に一方の外部端子(図示せず)が設けられ、他方の搭載パッド11と相対して他方の外部端子12(図4(d)参照)が設けられている場合、一方の貫通穴13は、図3に示すように、一方の搭載パッド11から離れた位置に設けられ、他方の貫通穴13は、図4(d)に示すように、他方の搭載パッド11と他方の外部端子11とが重なる領域内に位置するように設けられる(図4(d)参照)。   For example, as shown in FIG. 3, one external terminal (not shown) is provided at a position away from one mounting pad 11, and the other external terminal 12 (FIG. 3), one through hole 13 is provided at a position away from one mounting pad 11, and the other through hole 13 is formed as shown in FIG. 4 (d). As shown in FIG. 4, the other mounting pad 11 and the other external terminal 11 are provided so as to be positioned in an overlapping region (see FIG. 4D).

また、搭載パッド11と外部端子12とは配線パターン14により電気的に接続されている(例えば、図4(d)参照)。
この配線パターン14は、一方の搭載パッド11と基板体10を貫通する一方の貫通穴13の開口部13Aまで設けられ(図4参照)、これと接続するように一方の貫通穴13内部に設けられ(図4参照)、一方の貫通穴13の開口部13Bと一方の外部端子12とを接続するように他方の主面の表面に設けられる(図示せず)。また、さらに、配線パターン14は、他方の搭載パッド11と他方の外部端子12とを接続するように他方の貫通穴13内に設けられる(図4(d)参照)。
The mounting pad 11 and the external terminal 12 are electrically connected by a wiring pattern 14 (see, for example, FIG. 4D).
The wiring pattern 14 is provided up to an opening 13A of one through hole 13 that penetrates one mounting pad 11 and the substrate body 10 (see FIG. 4), and is provided inside the one through hole 13 so as to be connected thereto. (See FIG. 4), and provided on the surface of the other main surface (not shown) so as to connect the opening 13B of one through-hole 13 and one external terminal 12. Further, the wiring pattern 14 is provided in the other through hole 13 so as to connect the other mounting pad 11 and the other external terminal 12 (see FIG. 4D).

圧電振動素子20は、図1に示すように、水晶板21の両主面に励振電極22が設けられ、その水晶板の一方の端部側に達するように、引回しパターン23が形成されている。この引回しパターン23は、基板体10の搭載パッド11と導電性接着材Dで電気的・機械的に接続される。   As shown in FIG. 1, the piezoelectric vibration element 20 has excitation electrodes 22 provided on both main surfaces of a quartz plate 21, and a lead pattern 23 is formed so as to reach one end side of the quartz plate. Yes. The routing pattern 23 is electrically and mechanically connected to the mounting pad 11 of the substrate body 10 by the conductive adhesive D.

このように圧電振動子100に用いられる基板体10は、図3に示すように、ウェハWの状態で形成される。このウェハWに設けられた貫通穴13を塞ぐ貫通穴埋め方法を説明する。   Thus, the substrate body 10 used for the piezoelectric vibrator 100 is formed in the state of the wafer W as shown in FIG. A through hole filling method for closing the through hole 13 provided in the wafer W will be described.

このウェハWは、電子部品用基板であって、例えば、水晶、ガラス、セラミックス、樹脂ガラス等を用いることができる。
まず、例えば、基板体10となる領域を電子部品用基板であるウェハW内に複数設定し、基板体10となる領域内であって所定の位置に貫通穴13を設ける貫通穴形成工程を行う。
この貫通穴形成工程では、ウェハWに貫通穴13を形成する際にサンドブラスト又はエッチングを用いる。なお、サンドブラストを用いた場合について説明する。
The wafer W is an electronic component substrate, and for example, crystal, glass, ceramics, resin glass, or the like can be used.
First, for example, a plurality of regions to be the substrate body 10 are set in the wafer W, which is a substrate for electronic components, and a through hole forming step is performed in which the through holes 13 are provided at predetermined positions in the region to be the substrate body 10. .
In this through hole forming step, sand blasting or etching is used when forming the through hole 13 in the wafer W. The case where sandblasting is used will be described.

図4(a)及び(b)に示すように、サンドブラストで形成される貫通穴13は、その空間形状が円錐台形状となっている。なお、エッチングを用いた場合でも貫通穴13の空間形状が円錐台形状となる。
サンドブラストを用いた場合、マスクMの設けられていない部分が削られる。この削られる部分が穴となり、後に貫通穴13となる。この穴が深くなるにつれて穴底の径が小さくなり、その穴がウェハWを貫通したとき、ウェハWを貫通した側の開口部13Aは開口部13Bよりも狭く形成される。その結果、貫通穴13の空間形状が、いわゆるくさび型、つまり円錐台形状となる。
As shown in FIGS. 4A and 4B, the through hole 13 formed by sandblasting has a truncated cone shape in the spatial shape. Even when etching is used, the through hole 13 has a truncated cone shape.
When sandblasting is used, the portion where the mask M is not provided is shaved. This part to be cut becomes a hole and later becomes a through hole 13. As the hole becomes deeper, the diameter of the hole bottom becomes smaller. When the hole penetrates the wafer W, the opening 13A on the side penetrating the wafer W is formed narrower than the opening 13B. As a result, the through hole 13 has a so-called wedge shape, that is, a truncated cone shape.

図4(c)に示すように、この貫通孔13の周面と搭載パッド11、外部端子12、配線パターン14となる部分に下地層となる金属膜Bを蒸着により形成する。   As shown in FIG. 4C, a metal film B serving as a base layer is formed by vapor deposition on the peripheral surface of the through-hole 13 and the portions that become the mounting pad 11, the external terminal 12, and the wiring pattern 14.

その後、貫通穴形成工程により設けられた貫通穴13の周面を含むウェハWに形成した金属膜Bの上に別の金属膜を電解メッキにより設ける金属膜形成工程を行う。
この金属膜形成工程により、図4(d)に示すように、配線パターン14となる部分、搭載パッド11となる部分、外部端子12となる部分のそれぞれに金属膜が形成される。
Thereafter, a metal film forming step is performed in which another metal film is formed by electrolytic plating on the metal film B formed on the wafer W including the peripheral surface of the through hole 13 provided by the through hole forming step.
By this metal film forming step, as shown in FIG. 4D, a metal film is formed on each of the portion that becomes the wiring pattern 14, the portion that becomes the mounting pad 11, and the portion that becomes the external terminal 12.

この場合、貫通穴13内にも金属膜が形成されるが、貫通穴13の空間形状が円錐台形状となっているため、貫通穴13の小さい方の開口部13Aから先に形成された金属膜により塞がれる。つまり、所定の厚みとなるまで電解メッキを行うと、金属膜の厚みで開口部13A、13Bが小さくなっていき、やがて小さい方の開口部13Aが塞がることとなる。さらに、電解メッキを進めて開口部13Bが埋まるまで金属膜を形成してもよい。
これにより、貫通穴13内部に従来のような空間Sが形成されず、確実に貫通穴13を金属膜で埋めることができる。
In this case, a metal film is also formed in the through hole 13, but the metal formed first from the smaller opening 13A of the through hole 13 because the space shape of the through hole 13 has a truncated cone shape. Blocked by a membrane. That is, when electrolytic plating is performed until the thickness reaches a predetermined thickness, the openings 13A and 13B become smaller with the thickness of the metal film, and the smaller opening 13A is eventually closed. Furthermore, electrolytic plating may be performed to form a metal film until the opening 13B is filled.
Thereby, the conventional space S is not formed inside the through hole 13, and the through hole 13 can be reliably filled with the metal film.

以上、本発明の実施形態について説明したが、本発明は前記実施形態には限定されない。例えば、圧電振動子の基板体(ウェハ)として電子部品用基板を説明したが、これに限定されず、貫通穴13が設けられそこに金属を埋める構造となっていれば、電子部品用基板を配線基板、プリント基板、モジュール用基板などに用いても良い。また、電子部品用基板の材質は絶縁性材料であれば良い。また、金属膜は、電解メッキが可能な金属であればよい。なお、電解メッキを行う際は、開口部13Aを下向きにした状態でメッキ溶液につけても良い。このように電解メッキを行うことで、開口部13Aを金属膜で塞ぎやすくすることができる。   As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment. For example, the substrate for an electronic component has been described as the substrate body (wafer) of the piezoelectric vibrator. However, the present invention is not limited to this, and the substrate for an electronic component may be provided if the through hole 13 is provided and the metal is buried therein. You may use for a wiring board, a printed circuit board, a substrate for modules, etc. The material for the electronic component substrate may be an insulating material. The metal film may be any metal that can be electroplated. When performing electrolytic plating, the plating solution may be applied with the opening 13A facing downward. By performing electrolytic plating in this way, the opening 13A can be easily closed with a metal film.

圧電振動子の一例を示す概念図である。It is a conceptual diagram which shows an example of a piezoelectric vibrator. ウェハに貫通穴を設けた状態の一例を示す概念図である。It is a conceptual diagram which shows an example of the state which provided the through hole in the wafer. ウェハに金属膜を設けた状態の一例を示す概念図である。It is a conceptual diagram which shows an example of the state which provided the metal film in the wafer. 本発明の実施形態に係る電子部品用基板の貫通穴埋め方法の概念図であり、(a)はウェハにマスクをした状態を示す概念図であり、(b)はウェハに貫通穴が設けられた状態の一例を示す概念図であり、(c)は電解メッキする部分に下地層を設けた状態の一例を示す概念図であり、(d)は電解メッキにより貫通穴が埋められた状態の一例を示す概念図である。It is a conceptual diagram of the through-hole filling method of the board | substrate for electronic components which concerns on embodiment of this invention, (a) is a conceptual diagram which shows the state which masked the wafer, (b) was provided with the through-hole in the wafer It is a conceptual diagram which shows an example of a state, (c) is a conceptual diagram which shows an example of the state which provided the base layer in the part to electroplat, (d) is an example of the state by which the through-hole was filled by electrolytic plating FIG. (a)は従来の貫通穴の状態を示す概念図であり、(b)は従来の貫通穴を埋めた状態を示す概念図であり、(c)は貫通穴の内部に空間が形成された状態の一例を示す概念図である。(A) is a conceptual diagram which shows the state of the conventional through hole, (b) is a conceptual diagram which shows the state which filled the conventional through hole, (c), The space was formed in the inside of the through hole It is a conceptual diagram which shows an example of a state.

符号の説明Explanation of symbols

W ウェハ(電子部品用基板)
10 基板体(電子部品用基板)
13 貫通穴
13A、13B 開口部
11 搭載パッド(金属膜)
12 外部端子(金属膜)
14 配線パターン(金属膜)
B 金属膜
W wafer (Electronic component substrate)
10 Substrate body (substrate for electronic components)
13 Through-hole 13A, 13B Opening 11 Mounting pad (metal film)
12 External terminal (metal film)
14 Wiring pattern (metal film)
B Metal film

Claims (1)

サンドブラスト又はエッチングにより電子部品用基板に円錐台形状の貫通穴を設ける貫通穴形成工程と、
前記貫通穴形成工程により設けられた貫通穴の周面を含む前記電子部品用基板の主面に金属膜を電解メッキにより設ける金属膜形成工程とからなることを特徴とする電子部品用基板の貫通穴埋め方法。
A through hole forming step of providing a frustoconical through hole in the electronic component substrate by sandblasting or etching;
And a metal film forming step in which a metal film is provided by electrolytic plating on a main surface of the electronic component substrate including a peripheral surface of the through hole provided in the through hole forming step. How to fill holes.
JP2007339015A 2007-12-28 2007-12-28 Through hole filling method for substrate for electronic component Pending JP2009164153A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249424A (en) * 2010-05-24 2011-12-08 Daishinku Corp Sealing member of electronic component package, electronic component package, and method of manufacturing sealing member of electronic component package

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2002359446A (en) * 2001-05-31 2002-12-13 Hitachi Ltd Wiring board and manufacturing method therefor
JP2003110391A (en) * 2001-09-28 2003-04-11 Seiko Epson Corp Surface acoustic wave device and method of manufacturing the same
WO2004103039A1 (en) * 2003-05-19 2004-11-25 Dai Nippon Printing Co., Ltd. Double-sided wiring board, double-sided wiring board manufacturing method, and multilayer wiring board
JP2005125447A (en) * 2003-10-23 2005-05-19 Hitachi Ltd Electronic component and its manufacturing method
JP2006073852A (en) * 2004-09-03 2006-03-16 Dainippon Printing Co Ltd Sensor package and its manufacturing method

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2002359446A (en) * 2001-05-31 2002-12-13 Hitachi Ltd Wiring board and manufacturing method therefor
JP2003110391A (en) * 2001-09-28 2003-04-11 Seiko Epson Corp Surface acoustic wave device and method of manufacturing the same
WO2004103039A1 (en) * 2003-05-19 2004-11-25 Dai Nippon Printing Co., Ltd. Double-sided wiring board, double-sided wiring board manufacturing method, and multilayer wiring board
JP2005125447A (en) * 2003-10-23 2005-05-19 Hitachi Ltd Electronic component and its manufacturing method
JP2006073852A (en) * 2004-09-03 2006-03-16 Dainippon Printing Co Ltd Sensor package and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249424A (en) * 2010-05-24 2011-12-08 Daishinku Corp Sealing member of electronic component package, electronic component package, and method of manufacturing sealing member of electronic component package

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