JP2003110391A - Surface acoustic wave device and method of manufacturing the same - Google Patents
Surface acoustic wave device and method of manufacturing the sameInfo
- Publication number
- JP2003110391A JP2003110391A JP2001302315A JP2001302315A JP2003110391A JP 2003110391 A JP2003110391 A JP 2003110391A JP 2001302315 A JP2001302315 A JP 2001302315A JP 2001302315 A JP2001302315 A JP 2001302315A JP 2003110391 A JP2003110391 A JP 2003110391A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- cap member
- hole
- acoustic wave
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 134
- 239000002184 metal Substances 0.000 claims abstract description 134
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 238000007789 sealing Methods 0.000 claims abstract description 48
- 230000002093 peripheral effect Effects 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 62
- 239000000463 material Substances 0.000 abstract description 45
- 238000005219 brazing Methods 0.000 abstract description 41
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、弾性表面波装置お
よびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】一般に弾性表面波（ＳＡＷ）装置は、圧
電基板のＳＡＷ伝搬面に、ＩＤＴ（Interdigital Trans
ducer）電極およびこのＩＤＴ電極に通電する電極パッ
ドを、アルミ等の金属材料により形成している。このＩ
ＤＴ電極が酸化されると周波数特性が変化するため、キ
ャップ部材により気密性を確保するとともに、ＳＡＷ伝
搬面を不活性ガス中または真空中に保持している。一方
でＩＤＴ電極に通電するため、パッケージ部材の外側に
外部電極を形成した上で、電極パッドとの導通を確保し
ている。2. Description of the Related Art Generally, a surface acoustic wave (SAW) device has an IDT (Interdigital Transducer) on the SAW propagation surface of a piezoelectric substrate.
The electrode) and the electrode pad for energizing the IDT electrode are made of a metal material such as aluminum. This I
Since the frequency characteristic changes when the DT electrode is oxidized, the airtightness is secured by the cap member, and the SAW propagation surface is held in an inert gas or vacuum. On the other hand, in order to energize the IDT electrode, an external electrode is formed on the outside of the package member, and electrical continuity with the electrode pad is secured.
【０００３】特開平８−２１３８７４号公報には、弾性
表面波装置およびその製造方法が提案されている。図９
に同公報に係る弾性表面波装置の説明図を示す。同図
（１）は側面断面図であり、同図（２）はその一部拡大
図である。同公報に係る弾性表面波装置は、ＩＤＴ電極
２１４の周囲全体に陽極接合部２１８を形成し、ガラス
板製のカバー基板２２０を陽極接合して、ＩＤＴ電極２
１４を封止したものである。Japanese Unexamined Patent Publication No. 8-213874 proposes a surface acoustic wave device and a method for manufacturing the same. Figure 9
An explanatory view of the surface acoustic wave device according to the publication is shown in FIG. FIG. 1A is a side sectional view, and FIG. 2B is a partially enlarged view thereof. In the surface acoustic wave device according to the publication, an anodic bonding part 218 is formed around the entire IDT electrode 214, and a cover plate 220 made of a glass plate is anodic bonded to form the IDT electrode 2.
14 is sealed.
【０００４】一方、図９（２）に示すように、カバー基
板２２０の下面には、スパッタリングによりＴｉの下層
膜２３２ｂおよびＣｕの上層膜２３２ａを順次成膜し
て、外部電極２３２を形成している。なお、Ｔｉ膜２３
２ｂはカバー基板２２０を構成するガラス板との濡れ性
を確保するために、Ｃｕ膜２３２ａは導電性を確保する
ために、それぞれ必要となる。On the other hand, as shown in FIG. 9B, a Ti lower layer film 232b and a Cu upper layer film 232a are sequentially formed on the lower surface of the cover substrate 220 by sputtering to form an external electrode 232. There is. The Ti film 23
2b is necessary to ensure wettability with the glass plate forming the cover substrate 220, and the Cu film 232a is necessary to ensure conductivity.
【０００５】また、カバー基板２２０は電極パッド２１
６に至る貫通孔２２４を有している。この貫通孔２２４
の内周面および貫通孔２２４に露出している電極パッド
２１６の表面に対しても、上記と同時にＴｉ膜およびＣ
ｕ膜を成膜する。これにより、外部電極２３２と電極パ
ッド２１６との導通が確保される。なおＣｕ膜の上に
は、弾性表面波装置の実装用に、導電性ペーストからな
る印刷電極２３６を形成している。Further, the cover substrate 220 has an electrode pad 21.
6 has through holes 224. This through hole 224
At the same time as described above, the Ti film and the C
A u film is formed. This ensures electrical continuity between the external electrode 232 and the electrode pad 216. A printed electrode 236 made of a conductive paste is formed on the Cu film for mounting the surface acoustic wave device.
【０００６】[0006]
【発明が解決しようとする課題】ここで、カバー基板２
２０と電極パッド２１６とは接合されていないので、貫
通孔２２４の形成部分における気密性を確保するのは、
印刷電極２３６の形成前にはＴｉ膜およびＣｕ膜のみで
ある。Ｔｉ膜およびＣｕ膜の厚さは両者合わせて２μ程
度であるから、気密信頼性の確保が困難であるという問
題がある。特に、ＩＤＴ電極２１４を真空に保持する場
合には、気密信頼性の確保が著しく困難である。The cover substrate 2 will now be described.
Since the 20 and the electrode pad 216 are not joined, it is necessary to ensure the airtightness in the portion where the through hole 224 is formed.
Before forming the printed electrode 236, only the Ti film and the Cu film are formed. Since the total thickness of the Ti film and the Cu film is about 2 μ, there is a problem that it is difficult to secure the airtight reliability. In particular, when the IDT electrode 214 is held in vacuum, it is extremely difficult to ensure airtight reliability.
【０００７】また、スパッタリングによりＴｉ膜および
Ｃｕ膜を形成するため、２度の真空プロセスが必要とな
る。真空プロセスには真空ポンプが必要であり、またワ
ークを交換する度に真空ポンプを運転する必要があるこ
とから、多くの設備コストおよび製造コストがかかると
いう問題がある。Further, since the Ti film and the Cu film are formed by sputtering, the vacuum process is required twice. Since the vacuum process requires a vacuum pump and the vacuum pump needs to be operated every time a workpiece is replaced, there is a problem that a lot of equipment costs and manufacturing costs are required.
【０００８】さらに、Ｔｉ膜およびＣｕ膜は機械的強度
が弱く、弾性表面波装置の製造中または製造後に衝撃力
が作用すると、簡単に破壊されてしまうという問題があ
る。本発明は上記問題点に着目し、気密信頼性の確保が
可能であり、低コストであり、また機械的強度に優れた
弾性表面波装置およびその製造方法の提供を目的とす
る。Further, the Ti film and the Cu film have weak mechanical strength, and there is a problem that they are easily destroyed when an impact force acts during or after the manufacturing of the surface acoustic wave device. The present invention focuses on the above-mentioned problems, and an object thereof is to provide a surface acoustic wave device capable of ensuring airtight reliability, low in cost, and excellent in mechanical strength, and a manufacturing method thereof.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明に係る弾性表面波装置の製造方法は、圧電基
板のＳＡＷ伝搬面にＩＤＴ電極およびこのＩＤＴ電極に
通電する電極パッドを形成し、前記ＳＡＷ伝搬面の周縁
部に封止用電極を形成し、前記ＳＡＷ伝搬面を気密に保
持するキャップ部材を形成し、前記電極パッドと前記キ
ャップ部材を挟んで反対側の外部電極形成位置とを連通
する貫通孔を前記キャップ部材に形成し、前記貫通孔に
導電性材料を挿入し、外部電極としての金属板を前記外
部電極形成位置に配置して前記キャップ部材と陽極接合
し、さらに前記封止用電極と前記キャップ部材とを陽極
接合する構成とした。In order to achieve the above object, a method of manufacturing a surface acoustic wave device according to the present invention comprises forming an IDT electrode and an electrode pad for energizing the IDT electrode on a SAW propagation surface of a piezoelectric substrate. A sealing electrode is formed on a peripheral portion of the SAW propagation surface, a cap member that hermetically holds the SAW propagation surface is formed, and an external electrode formation position on the opposite side of the electrode pad and the cap member is formed. A through hole that communicates with the cap member, a conductive material is inserted into the through hole, a metal plate as an external electrode is arranged at the external electrode forming position to perform anodic bonding with the cap member, and The sealing electrode and the cap member are anodically bonded.
【００１０】陽極接合により金属板とキャップ部材との
密着性を確保できるので、貫通孔形成部分における気密
信頼性を確保することができる。また、外部電極として
および電極パッドとの導通手段としてＴｉ膜およびＣｕ
膜を形成する必要がないので、２回の真空プロセスは不
要である。従って設備コストおよび製造コストを削減す
ることができる。さらに、外部電極として金属板を使用
するので、Ｔｉ膜およびＣｕ膜に比べて高い機械的強度
が確保できる。Since the adhesion between the metal plate and the cap member can be secured by the anodic bonding, the airtightness reliability in the through hole forming portion can be secured. Further, a Ti film and Cu are used as an external electrode and as a means for conducting with the electrode pad.
No vacuum process is required twice because no film has to be formed. Therefore, the equipment cost and the manufacturing cost can be reduced. Further, since the metal plate is used as the external electrode, higher mechanical strength can be secured as compared with the Ti film and the Cu film.
【００１１】また、加熱して前記導電性材料を熔解させ
つつ前記金属板と前記キャップ部材とを陽極接合し、加
熱して前記導電性材料を熔解させつつ前記封止用電極と
前記キャップ部材とを陽極接合する構成とした。加熱し
て導電性材料を熔解させることにより、導電性材料と金
属板および電極パッドとの接触部分に両者の合金が形成
されて、両者間の導通を確保することができる。よって
Ｔｉ膜およびＣｕ膜を形成する必要がなく、設備コスト
および製造コストを削減することができる。また、導電
性材料を熔解するための加熱と、陽極接合に必要な加熱
とを同時に行うことにより、製造コストを削減すること
ができる。Also, the metal plate and the cap member are anodically bonded while heating to melt the conductive material, and the sealing electrode and the cap member are heated to melt the conductive material while being anodically bonded. Is configured to be anodically bonded. By heating and melting the conductive material, an alloy of the conductive material and the metal plate and the electrode pad is formed in the contact portion, so that electrical continuity between them can be secured. Therefore, it is not necessary to form the Ti film and the Cu film, and the equipment cost and the manufacturing cost can be reduced. Further, the heating for melting the conductive material and the heating required for anodic bonding are simultaneously performed, whereby the manufacturing cost can be reduced.
【００１２】また、前記キャップ部材の下方に前記金属
板を配置して陽極接合した後、前記キャップ部材を上下
反転させ前記キャップ部材の下方に前記圧電基板を配置
して前記封止用電極を陽極接合する構成とした。まずキ
ャップ部材の下方に金属板を配置して陽極接合すること
により、熔解した導電性材料が貫通孔から流出すること
がない。また、金属板と導電性材料との導通を確保する
ことができる。さらに、導電性材料と貫通孔の内周面と
を陽極接合することができる。一方、キャップ部材を上
下反転させキャップ部材の下方に圧電基板を配置して封
止用電極を陽極接合することにより、再度熔解した導電
性材料が電極パッド側に堆積し、電極パッドとの導通を
確保することができる。以上により、導電性材料の体積
が貫通孔の容積より少ない場合でも、金属板と電極パッ
ドとの導通を確保することができる。よってＴｉ膜およ
びＣｕ膜を形成する必要がなく、設備コストおよび製造
コストを削減することができる。Further, after the metal plate is arranged below the cap member for anodic bonding, the cap member is turned upside down and the piezoelectric substrate is arranged below the cap member so that the sealing electrode is anodized. It is configured to be joined. First, by disposing the metal plate below the cap member and performing anodic bonding, the melted conductive material does not flow out from the through hole. In addition, conduction between the metal plate and the conductive material can be secured. Further, the conductive material and the inner peripheral surface of the through hole can be anodically bonded. On the other hand, by flipping the cap member upside down and arranging the piezoelectric substrate below the cap member and anodic bonding the sealing electrode, the re-melted conductive material is deposited on the electrode pad side and conducts with the electrode pad. Can be secured. As described above, even when the volume of the conductive material is smaller than the volume of the through hole, it is possible to secure the conduction between the metal plate and the electrode pad. Therefore, it is not necessary to form the Ti film and the Cu film, and the equipment cost and the manufacturing cost can be reduced.
【００１３】また、前記貫通孔は、前記外部電極形成位
置側開口部の寸法を前記電極パッド側開口部の寸法より
大きく形成し、前記導電性材料は、前記貫通孔の前記外
部電極形成位置側開口部の寸法より小さく、なおかつ前
記電極パッド側開口部の寸法より大きく形成し、前記貫
通孔の前記外部電極形成位置側開口部を上にして前記貫
通孔に前記導電性材料を投入し、前記外部電極形成位置
に前記金属板を配置することにより前記導電性材料を封
入する構成とした。これにより、貫通孔の金属板側開口
部から投入した導電性材料は、電極パッド側開口部から
落下することなく、貫通孔の内部に留まることになる。
また、製造工程でキャップ部材を移動させた場合でも、
導電性材料が貫通孔から流出することがない。よって製
造工程での製品の扱いが容易になり製造コストを削減す
ることができる。Further, the through hole is formed such that the size of the opening on the external electrode forming position side is larger than the size of the opening on the electrode pad side, and the conductive material is formed on the external electrode forming position side of the through hole. It is formed to be smaller than the dimension of the opening and larger than the dimension of the electrode pad side opening, and the conductive material is charged into the through hole with the external electrode formation position side opening of the through hole facing upward, By disposing the metal plate at the external electrode forming position, the conductive material is enclosed. As a result, the conductive material introduced from the opening on the metal plate side of the through hole remains inside the through hole without dropping from the opening on the electrode pad side.
Also, even if the cap member is moved in the manufacturing process,
The conductive material does not flow out from the through hole. Therefore, the product can be easily handled in the manufacturing process, and the manufacturing cost can be reduced.
【００１４】また、複数の弾性表面波装置を同時に製造
する方法であって、圧電基板における複数のＳＡＷ伝搬
面にそれぞれＩＤＴ電極およびこのＩＤＴ電極に通電す
る電極パッドを形成し、前記各ＳＡＷ伝搬面の周縁部に
それぞれ封止用電極を形成するとともに、全ての前記封
止用電極に通電可能な封止用電極パッドを形成し、前記
各ＳＡＷ伝搬面をそれぞれ気密に保持するキャップ部材
を一体形成し、前記各電極パッドと前記キャップ部材を
挟んで反対側の外部電極形成位置とを連通する複数の貫
通孔を前記キャップ部材に形成し、前記各貫通孔に導電
性材料を挿入し、前記各外部電極形成位置に金属板を配
置可能な金属基板を一体形成し、前記金属基板と前記キ
ャップ部材とを陽極接合し、さらに前記各封止用電極と
前記キャップ部材とを陽極接合した後、前記各弾性表面
波装置に切断する構成とした。これにより、製造コスト
を削減することができる。In addition, in the method of simultaneously manufacturing a plurality of surface acoustic wave devices, an IDT electrode and an electrode pad for energizing the IDT electrode are formed on each of the plurality of SAW propagation surfaces of the piezoelectric substrate, and each of the SAW propagation surfaces is formed. A sealing electrode is formed on each of the peripheral portions of the, and a sealing electrode pad capable of conducting electricity is formed on all of the sealing electrodes, and a cap member that holds each SAW propagation surface airtight is integrally formed. Then, a plurality of through-holes that communicate the respective electrode pads and the external electrode forming positions on the opposite side with the cap member interposed therebetween are formed in the cap member, and a conductive material is inserted into each of the through-holes. A metal substrate on which a metal plate can be arranged is integrally formed at the external electrode forming position, the metal substrate and the cap member are anodically bonded, and the sealing electrodes and the cap member are further formed. The After anodic bonding, and configured to cut the each surface acoustic wave device. Thereby, the manufacturing cost can be reduced.
【００１５】一方、本発明に係る弾性表面波装置は、圧
電基板と、この圧電基板のＳＡＷ伝搬面に形成したＩＤ
Ｔ電極およびこのＩＤＴ電極に導通する電極パッドと、
前記ＳＡＷ伝搬面の周縁部に形成した封止用電極と、こ
の封止用電極に陽極接合され前記ＳＡＷ伝搬面を気密に
保持するキャップ部材と、前記電極パッドと前記キャッ
プ部材を挟んで反対側の外部電極形成位置とを連通する
前記キャップ部材に穿設された貫通孔と、前記外部電極
として前記キャップ部材に陽極接合された金属板と、前
記貫通孔の内部に配置され前記金属板と前記電極パッド
とを導通する導電性材料とを有する構成とした。これに
より、気密信頼性の確保が可能となり、コスト削減が可
能となり、また機械的強度に優れた弾性表面波装置を提
供することができる。On the other hand, the surface acoustic wave device according to the present invention includes a piezoelectric substrate and an ID formed on the SAW propagation surface of the piezoelectric substrate.
An electrode pad electrically connected to the T electrode and the IDT electrode,
A sealing electrode formed on the peripheral portion of the SAW propagation surface, a cap member that is anodically bonded to the sealing electrode and hermetically holds the SAW propagation surface, and an opposite side with the electrode pad and the cap member interposed therebetween. Through hole formed in the cap member that communicates with the external electrode forming position, a metal plate anodically bonded to the cap member as the external electrode, the metal plate disposed inside the through hole, and the metal plate. It has a configuration including a conductive material that conducts to the electrode pad. As a result, it is possible to ensure airtight reliability, reduce costs, and provide a surface acoustic wave device having excellent mechanical strength.
【００１６】また前記貫通孔は、前記外部電極形成位置
側開口部の寸法が前記電極パッド側開口部の寸法より大
きく形成されている構成とした。また、前記貫通孔の内
周面上に形成された導電性膜を有する構成とした。これ
により、金属板と電極パッドとの導通を確保することが
できる。Further, the through hole is formed such that the size of the opening on the external electrode forming position side is larger than the size of the opening on the electrode pad side. In addition, it is configured to have a conductive film formed on the inner peripheral surface of the through hole. As a result, electrical continuity between the metal plate and the electrode pad can be ensured.
【００１７】[0017]
【発明の実施の形態】本発明に係る弾性表面波装置およ
びその製造方法の好ましい実施の形態を、添付図面に従
って詳細に説明する。なお以下に記載するのは本発明の
実施形態の一態様にすぎず、本発明はこれらに限定され
るものではない。BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a surface acoustic wave device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. It should be noted that what is described below is only one aspect of the embodiment of the present invention, and the present invention is not limited thereto.
【００１８】最初に、第１実施形態について説明する。
図１に第１実施形態に係る弾性表面波装置の説明図を示
す。同図（１）はＡ−Ａ線における側面断面図であり、
同図（２）はＢ−Ｂ線における底面断面図である。第１
実施形態に係る弾性表面波装置は、圧電基板１０と、こ
の圧電基板１０のＳＡＷ伝搬面１２に形成したＩＤＴ電
極１４およびこのＩＤＴ電極１４に通電する電極パッド
１６と、ＳＡＷ伝搬面１２の周縁部に形成した封止用電
極１８と、ＳＡＷ伝搬面１２を気密に保持するガラス基
板２０と、電極パッド１６とガラス基板２０を挟んで反
対側の外部電極形成位置とを連通するガラス基板２０に
穿設された貫通孔２４と、外部電極としてガラス基板２
０に陽極接合された金属板３２と、貫通孔２４の内部に
配置され金属板３２と電極パッド１６とを導通する金属
ロウ材３４とを有するものである。First, the first embodiment will be described.
FIG. 1 shows an explanatory view of the surface acoustic wave device according to the first embodiment. FIG. 1A is a side sectional view taken along line AA,
FIG. 2B is a bottom cross-sectional view taken along the line BB. First
The surface acoustic wave device according to the embodiment includes a piezoelectric substrate 10, an IDT electrode 14 formed on the SAW propagation surface 12 of the piezoelectric substrate 10, an electrode pad 16 that conducts electricity to the IDT electrode 14, and a peripheral portion of the SAW propagation surface 12. The sealing electrode 18 formed in the above, the glass substrate 20 that holds the SAW propagation surface 12 in an airtight manner, and the glass substrate 20 that connects the electrode pad 16 and the glass substrate 20 on the opposite side to the external electrode forming position are formed. The through hole 24 provided and the glass substrate 2 as an external electrode
It has a metal plate 32 anodically bonded to 0 and a metal brazing material 34 arranged inside the through hole 24 and electrically connecting the metal plate 32 and the electrode pad 16.
【００１９】まず、圧電基板１０のＳＡＷ伝搬面１２に
ＩＤＴ電極１４およびこのＩＤＴ電極１４に通電する電
極パッド１６を形成する。圧電基板１０は水晶等の圧電
材料からなる。ＩＤＴ電極１４は、アルミ等の金属材料
により圧電基板１０の下面中央部に形成する。またＩＤ
Ｔ電極１４は、くし歯状の正極側電極および負極側電極
からなり、両電極のくし歯を交互に組み合わせ平行に配
置して形成する。電極パッド１６は、ＩＤＴ電極１４の
両端部に形成し、各電極に接続して通電可能とする。そ
して、上記ＩＤＴ電極１４および電極パッド１６を取り
囲むように、圧電基板１０のＳＡＷ伝搬面１２の周縁部
に、封止用電極１８を形成する。First, the IDT electrode 14 and the electrode pad 16 that conducts electricity to the IDT electrode 14 are formed on the SAW propagation surface 12 of the piezoelectric substrate 10. The piezoelectric substrate 10 is made of a piezoelectric material such as crystal. The IDT electrode 14 is formed of a metal material such as aluminum at the center of the lower surface of the piezoelectric substrate 10. Also ID
The T electrode 14 is composed of a comb-shaped positive electrode and a negative electrode, and is formed by alternately combining comb teeth of both electrodes and arranging them in parallel. The electrode pads 16 are formed on both ends of the IDT electrode 14 and are connected to the respective electrodes so that they can be energized. Then, a sealing electrode 18 is formed on the peripheral portion of the SAW propagation surface 12 of the piezoelectric substrate 10 so as to surround the IDT electrode 14 and the electrode pad 16.
【００２０】なおＩＤＴ電極１４の両端部には、図２に
示すように、複数の短絡電極１５ａを平行に配置した反
射器１５を形成するのが一般である。以下の図面では、
簡単のためこの反射器を省略して記載する。In general, reflectors 15 each having a plurality of short-circuit electrodes 15a arranged in parallel are formed on both ends of the IDT electrode 14, as shown in FIG. In the drawings below,
For simplicity, this reflector is omitted in the description.
【００２１】一方、ＳＡＷ伝搬面を気密に保持するキャ
ップ部材としてのガラス基板２０を形成する。ガラス基
板２０は、ＮａやＬｉ等のアルカリ金属を含むガラス材
料により、圧電基板１０と同等の大きさに形成する。な
お、ガラス基板２０と圧電基板１０に形成した封止用電
極１８との間は、後述する方法で陽極接合する。ガラス
基板２０の中央部には、ＩＤＴ電極１４との接触を回避
するため、キャビティ２６を設ける。またキャビティ２
６の両端部には、後述する外部電極としての金属板３２
と電極パッド１６とを連通する貫通孔（スルーホール）
２４を穿設する。貫通孔２４は、金属板３２側の開口径
を電極パッド１６側の開口径より大きくして、その側面
断面形状がテーパ状になるように形成する。On the other hand, a glass substrate 20 is formed as a cap member that keeps the SAW propagation surface airtight. The glass substrate 20 is made of a glass material containing an alkali metal such as Na or Li and has the same size as the piezoelectric substrate 10. The glass substrate 20 and the sealing electrode 18 formed on the piezoelectric substrate 10 are anodically bonded by a method described later. A cavity 26 is provided at the center of the glass substrate 20 to avoid contact with the IDT electrode 14. Also cavity 2
A metal plate 32 as an external electrode, which will be described later, is provided at both ends of
Through hole that connects the electrode pad 16 to the electrode pad 16
24 is drilled. The through hole 24 is formed so that the opening diameter on the side of the metal plate 32 is larger than the opening diameter on the side of the electrode pad 16 and the side surface cross-sectional shape is tapered.
【００２２】ガラス基板２０の下面両端部には、外部電
極としての金属板３２を陽極接合する。金属板３２とし
て、ＮｉまたはＮｉおよびＦｅの合金等の片面にＡｕメ
ッキを施したもの等を使用する。なお、金属板３２にお
けるガラス基板２０との陽極接合面には、Ａｕメッキは
不要である。また貫通孔２４の内部には、金属板３２と
電極パッド１６とを導通する導電性材料として金属ロウ
材３４を配置する。金属ロウ材３４として、例えばＡｕ
とＳｎとの合金等を使用することにより、比較的低温で
熔解させることができる。なお、金属板３２と電極パッ
ド１６との導通が確保できれば、金属ロウ材３４を貫通
孔２４の内部全体に装填する必要はない。例えば図１
（１）に示すように、貫通孔２４の内部に気泡３４ａが
あってもよい。Metal plates 32 as external electrodes are anodically bonded to both ends of the lower surface of the glass substrate 20. As the metal plate 32, a plate such as Ni or an alloy of Ni and Fe plated with Au on one surface is used. It should be noted that Au plating is not required on the anodic bonding surface of the metal plate 32 with the glass substrate 20. Further, inside the through hole 24, a metal brazing material 34 is arranged as a conductive material for electrically connecting the metal plate 32 and the electrode pad 16. As the metal brazing material 34, for example, Au
By using the alloy of Sn and Sn, it is possible to melt at a relatively low temperature. It should be noted that it is not necessary to load the metal brazing material 34 into the entire inside of the through hole 24 as long as the conduction between the metal plate 32 and the electrode pad 16 can be secured. Figure 1
As shown in (1), there may be bubbles 34a inside the through hole 24.
【００２３】なお、金属板と電極パッドとの導通をより
確実なものとするため、貫通孔の内周面に導電性膜とし
て金属膜を形成してもよい。金属膜として、Ｔｉ、Ｎ
ｉ、Ｃｒ、Ａｕ、Ａｇ等の材料が使用可能である。な
お、金属膜と貫通孔内周面とは陽極接合されるため濡れ
性は問題とならず、金属膜の内側には金属ロウ材を配置
するので導電性も問題とならない。従って、金属膜には
一応の導電性があればよい。これにより、貫通孔内に配
置した金属ロウ材の体積が、貫通孔の容積の半分以下で
あっても、金属板と電極パッドとの導通を確保すること
ができる。A metal film may be formed as a conductive film on the inner peripheral surface of the through hole in order to ensure the conduction between the metal plate and the electrode pad. As a metal film, Ti, N
Materials such as i, Cr, Au and Ag can be used. Since the metal film and the inner peripheral surface of the through hole are anodically bonded, the wettability does not matter, and since the metal brazing material is arranged inside the metal film, the conductivity does not matter either. Therefore, the metal film only needs to have a certain conductivity. As a result, even if the volume of the metal brazing material arranged in the through hole is not more than half the volume of the through hole, the conduction between the metal plate and the electrode pad can be ensured.
【００２４】第１実施形態に係る弾性表面波装置は、以
下の方法で製造する。図３に第１実施形態に係る弾性表
面波装置の製造方法のフローチャートを示し、図４およ
び図５に製造方法の説明図を示す。まず、圧電基板のＳ
ＡＷ伝搬面にＩＤＴ電極、電極パッドおよび封止用電極
を形成する（ステップ７０）。The surface acoustic wave device according to the first embodiment is manufactured by the following method. FIG. 3 shows a flowchart of a method of manufacturing the surface acoustic wave device according to the first embodiment, and FIGS. 4 and 5 show explanatory views of the method of manufacturing. First, S of the piezoelectric substrate
An IDT electrode, an electrode pad and a sealing electrode are formed on the AW propagation surface (step 70).
【００２５】次に、図４（１）に示すように、ガラス基
板２０を形成する（ステップ７２）。上述したように、
ガラス基板２０の中央部にはキャビティ２６を形成し、
キャビティ２６の両端部には貫通孔２４を形成する。キ
ャビティ２６および貫通孔２４の形成は、サンドブラス
ト加工またはエッチング加工等の方法で行う。なお、貫
通孔の内周面に導電性膜として金属膜を形成する場合に
は、この段階で形成する。金属膜の形成は、貫通孔の内
周面以外の部分にマスクを施した上で、スパッタ法や蒸
着法等により行う。なお貫通孔２４の側面断面形状がテ
ーパ状になるように形成すれば、貫通孔の内周面上に金
属膜の材料が付着しやすくなり、成膜時間を短縮するこ
とができる。Next, as shown in FIG. 4A, the glass substrate 20 is formed (step 72). As mentioned above,
A cavity 26 is formed at the center of the glass substrate 20,
Through holes 24 are formed at both ends of the cavity 26. The cavity 26 and the through hole 24 are formed by a method such as sandblasting or etching. When a metal film is formed as a conductive film on the inner peripheral surface of the through hole, it is formed at this stage. The metal film is formed by a sputtering method, a vapor deposition method, or the like after masking a portion other than the inner peripheral surface of the through hole. If the side surface of the through hole 24 is formed in a tapered shape, the material of the metal film easily adheres to the inner peripheral surface of the through hole, and the film forming time can be shortened.
【００２６】次に、図４（２）に示すように、ガラス基
板２０を上下反転する（ステップ７６）。これにより、
ガラス基板２０の金属板装着側が上になる。そして、貫
通孔２４の内部に金属ロウ材３４を投入する（ステップ
７８）。金属ロウ材３４はあらかじめ、その寸法が貫通
孔２４の電極パッド側開口部２４ａの寸法より大きく、
なおかつ金属板側開口部２４ｂの寸法より小さい粒状に
形成しておく。これにより、貫通孔２４の金属板側開口
部２４ｂから投入した金属ロウ材３４は、電極パッド側
開口部２４ａから落下することなく、貫通孔２４の内部
に留まることになる。次に、金属板３２を配置する（ス
テップ８０）。これにより、金属ロウ材３４が貫通孔２
４の内部に封入されるので、製造工程でガラス基板２０
を移動させた場合でも、金属ロウ材３４が貫通孔２４か
ら流出することがない。Next, as shown in FIG. 4B, the glass substrate 20 is turned upside down (step 76). This allows
The side of the glass substrate 20 on which the metal plate is mounted faces upward. Then, the metal brazing material 34 is put into the through hole 24 (step 78). The size of the metal brazing material 34 is larger than the size of the electrode pad side opening 24a of the through hole 24 in advance,
Further, it is formed in a granular shape smaller than the size of the opening 24b on the metal plate side. As a result, the metal brazing material 34 introduced from the metal plate side opening 24b of the through hole 24 stays inside the through hole 24 without dropping from the electrode pad side opening 24a. Next, the metal plate 32 is arranged (step 80). As a result, the metal brazing material 34 becomes
4 is sealed inside the glass substrate 20 during the manufacturing process.
Even when is moved, the metal brazing material 34 does not flow out from the through hole 24.
【００２７】次に、図４（３）に示すように、金属板３
２とともにガラス基板２０を上下反転する（ステップ８
２）。これにより、金属板３２はガラス基板の下方に配
置される。そして、金属板３２とガラス基板２０とを陽
極接合する（ステップ８４）。具体的には、まずガラス
基板２０の上側全面にマイナス電極４２を配置して、全
体を数百度の高温に保持する。次に、直流電源のプラス
側を金属板３２に接続し、両電極間に数百から千ボルト
の電圧を印加する。すると、ガラス基板２０内のアルカ
リ金属のカチオンがマイナス電極４２側に引き寄せら
れ、ガラス基板２０における金属板３２との接触面付近
に電荷空乏層が形成される。よって静電引力により、金
属板３２とガラス基板２０とを密着させることができ
る。このとき、ガラス中の全てのアルカリ成分が析出し
きらない内に、電圧の印加を終了する。上記により、図
４（３）の×印の部分が陽極接合される。なお、マイナ
ス電極４２とガラス基板２０とは接合されない。Next, as shown in FIG. 4C, the metal plate 3
The glass substrate 20 is turned upside down together with 2 (step 8).
2). Thereby, the metal plate 32 is arranged below the glass substrate. Then, the metal plate 32 and the glass substrate 20 are anodically bonded (step 84). Specifically, first, the minus electrode 42 is arranged on the entire upper surface of the glass substrate 20, and the whole is kept at a high temperature of several hundred degrees. Next, the positive side of the DC power supply is connected to the metal plate 32, and a voltage of several hundred to 1,000 volts is applied between both electrodes. Then, the cations of the alkali metal in the glass substrate 20 are attracted to the negative electrode 42 side, and a charge depletion layer is formed near the contact surface of the glass substrate 20 with the metal plate 32. Therefore, the electrostatic attraction can bring the metal plate 32 and the glass substrate 20 into close contact with each other. At this time, the application of the voltage is completed before all the alkali components in the glass are completely deposited. By the above, the portion marked with X in FIG. 4C is anodically bonded. The minus electrode 42 and the glass substrate 20 are not joined.
【００２８】なお、陽極接合時の加熱により金属ロウ材
３４が熔解して、貫通孔２４内部の金属板３２側に堆積
する。そして、金属板３２と金属ロウ材３４との接触部
分には両者の合金が形成されて、両者間の導通が確保さ
れる。これに伴って、金属ロウ材３４と貫通孔２４の内
周面との間にも電位差が生じ、両者間を陽極接合するこ
とができる。The metal brazing material 34 is melted by heating during the anodic bonding and deposited on the metal plate 32 inside the through hole 24. Then, an alloy of the metal plate 32 and the metal brazing material 34 is formed in the contact portion between the metal plate 32 and the metal brazing material 34, and conduction between the both is secured. Along with this, a potential difference also occurs between the metal brazing material 34 and the inner peripheral surface of the through hole 24, and it is possible to perform anodic bonding between the two.
【００２９】次に、図５（１）に示すように、ガラス基
板２０の上方に圧電基板１０を配置して、全体を上下反
転する（ステップ８６）。なお、上下反転したガラス基
板２０の下方に、上下反転した圧電基板１０を配置して
もよい。次に、全体を不活性ガス中または真空中に保持
する（ステップ９０）。そして、圧電基板１０に形成し
た封止用電極１８とガラス基板２０とを陽極接合する
（ステップ９２）。具体的には、まず全体を数百度の高
温に保持する。次に、直流電源のプラス側を封止用電極
１８に接続するとともに、マイナス側を金属板３２に接
続して、両電極間に数百から千ボルトの電圧を印加す
る。すると、ガラス中にアルカリ成分が残されている
為、上記と同様のメカニズムにより封止用電極１８とガ
ラス基板２０とを陽極接合させることができる。なお、
図５（１）の×印の部分が陽極接合された部分である。Next, as shown in FIG. 5A, the piezoelectric substrate 10 is arranged above the glass substrate 20 and the whole is turned upside down (step 86). The vertically inverted piezoelectric substrate 10 may be disposed below the vertically inverted glass substrate 20. Next, the whole is kept in an inert gas or a vacuum (step 90). Then, the sealing electrode 18 formed on the piezoelectric substrate 10 and the glass substrate 20 are anodically bonded (step 92). Specifically, first, the whole is kept at a high temperature of several hundred degrees. Next, the positive side of the DC power source is connected to the sealing electrode 18, the negative side is connected to the metal plate 32, and a voltage of several hundred to 1,000 volts is applied between both electrodes. Then, since the alkaline component remains in the glass, the sealing electrode 18 and the glass substrate 20 can be anodically bonded by the same mechanism as described above. In addition,
The part marked with X in FIG. 5 (1) is the part that is anodically bonded.
【００３０】なお、陽極接合時の加熱により金属ロウ材
３４が再度熔解する。もっとも、貫通孔２４の内周面と
陽極接合した金属ロウ材は流れ落ちず、貫通孔２４の中
央部に位置する金属ロウ材のみが熔解して電極パッド１
６側に堆積する。そして、電極パッド１６と金属ロウ材
３４との接触部分には両者の合金が形成されて、両者間
の導通が確保される。これにより金属板３２から、貫通
孔内周面と陽極接合した金属ロウ材および電極パッド側
に堆積した金属ロウ材を介して、電極パッド１６との導
通を確保することができる。The metal brazing material 34 is melted again by heating during the anodic bonding. However, the metal brazing material anodically bonded to the inner peripheral surface of the through hole 24 does not flow down, and only the metal brazing material located in the central portion of the through hole 24 melts and the electrode pad 1
Deposit on the 6 side. Then, an alloy of the electrode pad 16 and the metal brazing material 34 is formed in a contact portion between the electrode pad 16 and the metal brazing material 34, and electrical continuity between the both is secured. As a result, it is possible to secure electrical continuity with the electrode pad 16 from the metal plate 32 via the metal brazing material anodically bonded to the inner peripheral surface of the through hole and the metal brazing material deposited on the electrode pad side.
【００３１】そして、図５（２）に示すように全体を反
転させれば、第１実施形態に係る弾性表面波装置が完成
する（ステップ９６）。上記のように構成した第１実施
形態に係る弾性表面波装置を、上記の方法に従って製造
することにより、ＳＡＷ伝搬面を気密に保持することが
できる。この点、特開平８−２１３８７４号公報に係る
弾性表面波装置では、貫通孔形成部分においてＴｉ膜お
よびＣｕ膜のみで気密性を確保するほかなく、気密信頼
性の確保が困難であった。しかし、第１実施形態に係る
弾性表面波装置は、外部電極としての金属板をガラス基
板に陽極接合した構成とした。陽極接合により金属板と
ガラス基板との密着性を確保できるので、貫通孔形成部
分における気密信頼性を確保することができる。Then, as shown in FIG. 5 (2), the entire surface is inverted to complete the surface acoustic wave device according to the first embodiment (step 96). The SAW propagation surface can be kept airtight by manufacturing the surface acoustic wave device according to the first embodiment configured as described above according to the above method. In this respect, in the surface acoustic wave device according to Japanese Patent Application Laid-Open No. 8-213874, it is difficult to secure the airtightness in the through hole formation portion only by securing the airtightness by the Ti film and the Cu film. However, the surface acoustic wave device according to the first embodiment has a configuration in which a metal plate as an external electrode is anodically bonded to a glass substrate. Since the adhesion between the metal plate and the glass substrate can be secured by the anodic bonding, the airtightness reliability in the through hole forming portion can be secured.
【００３２】また、第１実施形態に係る弾性表面波装置
では、外部電極としておよび電極パッドとの導通手段と
してＴｉ膜およびＣｕ膜を形成する必要がないので、２
回の真空プロセスは不要である。従って設備コストおよ
び製造コストを削減することができる。さらに、第１実
施形態に係る弾性表面波装置では、外部電極として金属
板を使用するので、Ｔｉ膜およびＣｕ膜に比べて高い機
械的強度が確保できる。Further, in the surface acoustic wave device according to the first embodiment, since it is not necessary to form the Ti film and the Cu film as the external electrodes and as the means for connecting with the electrode pad,
No vacuum process is required. Therefore, the equipment cost and the manufacturing cost can be reduced. Further, in the surface acoustic wave device according to the first embodiment, since the metal plate is used as the external electrode, higher mechanical strength can be secured as compared with the Ti film and the Cu film.
【００３３】一方、第１実施形態に係る弾性表面波装置
の製造方法では、加熱して金属ロウ材を熔解させつつ金
属板とガラス基板とを陽極接合し、加熱して金属ロウ材
を熔解させつつ封止用電極とガラス基板とを陽極接合す
る構成とした。加熱して金属ロウ材を熔解させることに
より、金属ロウ材と金属板および電極パッドとの接触部
分に両者の合金が形成されて、両者間の導通を確保する
ことができる。よってＴｉ膜およびＣｕ膜を形成する必
要がなく、設備コストおよび製造コストを削減すること
ができる。また、金属ロウ材を熔解するための加熱と、
陽極接合に必要な加熱とを同時に行うことにより、製造
コストを削減することができる。On the other hand, in the method of manufacturing a surface acoustic wave device according to the first embodiment, the metal plate and the glass substrate are anodically bonded while heating to melt the metal brazing material, and the metal brazing material is melted by heating. Meanwhile, the sealing electrode and the glass substrate are anodically bonded. By heating and melting the metal brazing material, an alloy of the metal brazing material and the metal plate and the electrode pad is formed in the contact portion, so that electrical continuity between the both can be secured. Therefore, it is not necessary to form the Ti film and the Cu film, and the equipment cost and the manufacturing cost can be reduced. Also, heating for melting the metal brazing material,
By simultaneously performing the heating required for anodic bonding, the manufacturing cost can be reduced.
【００３４】また、ガラス基板の下方に金属板を配置し
て陽極接合した後、ガラス基板を上下反転させガラス基
板の下方に圧電基板を配置して封止用電極を陽極接合す
る構成とした。まずガラス基板の下方に金属板を配置し
て陽極接合することにより、熔解した金属ロウ材が貫通
孔から流出することがない。また、金属板と金属ロウ材
との導通を確保することができる。さらに、金属ロウ材
と貫通孔の内周面とを陽極接合することができる。これ
により、ガラス基板の濡れ性が悪い場合でも金属ロウ材
を固着することができる。一方、ガラス基板を上下反転
させガラス基板の下方に圧電基板を配置して封止用電極
を陽極接合することにより、再度熔解した金属ロウ材が
電極パッド側に堆積し、電極パッドとの導通を確保する
ことができる。以上により、貫通孔に投入した金属ロウ
材の体積が、貫通孔の容積より少ない場合であっても、
貫通孔の容積の半分以上であれば、金属板と電極パッド
との導通を確保することができる。よってＴｉ膜および
Ｃｕ膜を形成する必要がなく、設備コストおよび製造コ
ストを削減することができる。In addition, after the metal plate is arranged below the glass substrate and anodic bonding is performed, the glass substrate is turned upside down and the piezoelectric substrate is arranged below the glass substrate to anodic bond the sealing electrode. First, by disposing the metal plate below the glass substrate and performing anodic bonding, the melted metal brazing material does not flow out from the through hole. Further, it is possible to secure the conduction between the metal plate and the metal brazing material. Further, the metal brazing material and the inner peripheral surface of the through hole can be anodically bonded. As a result, the metal brazing material can be fixed even if the glass substrate has poor wettability. On the other hand, by flipping the glass substrate upside down and arranging the piezoelectric substrate below the glass substrate and anodically bonding the sealing electrode, the remelted metal brazing material is deposited on the electrode pad side and conducts with the electrode pad. Can be secured. From the above, even when the volume of the metal brazing material charged into the through hole is smaller than the volume of the through hole,
If the volume of the through hole is at least half, the electrical continuity between the metal plate and the electrode pad can be ensured. Therefore, it is not necessary to form the Ti film and the Cu film, and the equipment cost and the manufacturing cost can be reduced.
【００３５】また、貫通孔は金属板側開口部の寸法を電
極パッド側開口部の寸法より大きく形成し、金属ロウ材
原料は貫通孔の金属板側開口部の寸法より小さくなおか
つ電極パッド側開口部の寸法より大きく形成し、貫通孔
の金属板側開口部を上にして貫通孔に金属ロウ材原料を
投入する構成とした。これにより、貫通孔の金属板側開
口部から投入した金属ロウ材は、電極パッド側開口部か
ら落下することなく、貫通孔の内部に留まることにな
る。また、金属板を配置することにより金属ロウ材を封
入する構成とした。これにより、製造工程でガラス基板
を移動させた場合でも、金属ロウ材が貫通孔から流出す
ることがない。よって製造工程での製品の取り扱いが容
易となり製造コストを削減することができる。Further, the through hole is formed such that the size of the opening on the metal plate side is larger than the size of the opening on the electrode pad side, and the raw material of the metal brazing material is smaller than the size of the opening on the metal plate side of the through hole and the opening on the electrode pad side. The metal brazing material raw material is introduced into the through hole with the through hole having a metal plate side opening facing upward. As a result, the metal brazing material introduced from the opening on the metal plate side of the through hole remains inside the through hole without dropping from the opening on the electrode pad side. Further, a metal brazing material is enclosed by disposing a metal plate. Thereby, even when the glass substrate is moved in the manufacturing process, the metal brazing material does not flow out from the through hole. Therefore, the product can be easily handled in the manufacturing process, and the manufacturing cost can be reduced.
【００３６】次に、第２実施形態について説明する。図
６に第２実施形態に係る弾性表面波装置の製造方法の説
明図を示す。第２実施形態に係る弾性表面波装置の製造
方法は、第１実施形態に係る弾性表面波装置を、同時に
複数個製造する方法であって、圧電基板１１０における
複数のＳＡＷ伝搬面にそれぞれＩＤＴ電極およびこのＩ
ＤＴ電極に通電する電極パッドを形成し、各ＳＡＷ伝搬
面の周縁部にそれぞれ封止用電極１１８を形成するとと
もに、全ての封止用電極１１８に通電可能な封止用電極
パッド１１９（図８参照）を形成し、各ＳＡＷ伝搬面を
それぞれ気密に保持するガラス基板１２０を一体形成
し、各電極パッドとガラス基板１２０を挟んで反対側の
外部電極形成位置とを連通する複数の貫通孔をガラス基
板１２０に形成し、各貫通孔に導電性材料を挿入し、各
外部電極形成位置に金属板を配置可能な金属基板１３２
を一体形成し、金属基板１３２とガラス基板１２０とを
陽極接合し、さらに各封止用電極１１８とガラス基板１
２０とを陽極接合した後、各弾性表面波装置に切断する
構成とした。Next, the second embodiment will be described. FIG. 6 shows an explanatory view of the method for manufacturing the surface acoustic wave device according to the second embodiment. The method of manufacturing the surface acoustic wave device according to the second embodiment is a method of manufacturing a plurality of surface acoustic wave devices according to the first embodiment at the same time, and the IDT electrodes are respectively formed on the plurality of SAW propagation surfaces of the piezoelectric substrate 110. And this I
Electrode pads for energizing the DT electrodes are formed, encapsulating electrodes 118 are formed on the peripheral portions of each SAW propagation surface, and encapsulating electrode pads 119 capable of energizing all of the encapsulating electrodes 118 (FIG. 8). Glass substrate 120 for holding each SAW propagation surface in an airtight manner integrally with each other, and forming a plurality of through holes for communicating each electrode pad with the external electrode forming position on the opposite side with the glass substrate 120 interposed therebetween. A metal substrate 132 which is formed on the glass substrate 120, a conductive material is inserted into each through hole, and a metal plate can be arranged at each external electrode formation position.
Are integrally formed, the metal substrate 132 and the glass substrate 120 are anodically bonded, and further, each sealing electrode 118 and the glass substrate 1 are formed.
After anodic bonding 20 and 20, the surface acoustic wave device is cut.
【００３７】図６（１）に示すように、第２実施形態に
おけるガラス基板１２０は、弾性表面波装置複数個分の
大きさに一体的に形成する。そのガラス基板１２０に弾
性表面波装置１個分の形成領域１２０ａを複数設定し、
全領域に対して同時に第１実施形態と同じキャビティお
よび貫通孔を形成する。なお以下の各工程でも、全領域
に対して同時に第１実施形態と同じ作業を行う。As shown in FIG. 6A, the glass substrate 120 according to the second embodiment is integrally formed to have the size of a plurality of surface acoustic wave devices. A plurality of formation regions 120a for one surface acoustic wave device are set on the glass substrate 120,
The same cavities and through holes as in the first embodiment are simultaneously formed in all regions. In each of the following steps, the same work as in the first embodiment is performed on all areas at the same time.
【００３８】次に、各貫通孔に粒状の金属ロウ材を投入
し、ガラス基板１２０の外部電極形成位置に金属板を配
置可能な金属基板１３２を一体的に形成し、金属基板１
３２とガラス基板１２０とを陽極接合する。図７に第２
実施形態における金属基板の説明図を示す。同図（１）
は金属基板の平面図の一部であり、同図（２）は弾性表
面波装置１個分の外部電極の平面図である。図７（１）
に示すように、金属基板１３２もガラス基板１２０と同
様に、弾性表面波装置複数個分の大きさに形成し、弾性
表面波装置１個分の形成領域１３２ａを複数設定する。
このように、金属基板１３２を一体的に形成することに
より、ガラス基板１２０上に簡単に配置できるととも
に、簡単に電圧を印加して陽極接合することができる。Next, a granular metal brazing material is introduced into each through hole to integrally form a metal substrate 132 on which a metal plate can be arranged at the external electrode forming position of the glass substrate 120.
32 and the glass substrate 120 are anodically bonded. Second in FIG.
The explanatory view of the metal substrate in an embodiment is shown. Same figure (1)
Is a part of a plan view of a metal substrate, and FIG. 2B is a plan view of an external electrode for one surface acoustic wave device. Figure 7 (1)
Similarly to the glass substrate 120, the metal substrate 132 is formed to have a size corresponding to a plurality of surface acoustic wave devices, and a plurality of formation regions 132a for one surface acoustic wave device are set.
Thus, by integrally forming the metal substrate 132, the metal substrate 132 can be easily arranged on the glass substrate 120, and a voltage can be easily applied to perform anodic bonding.
【００３９】なお図７（２）に示すように、弾性表面波
装置の外部電極は、正極側と負極側とに分離して形成す
る必要がある。そこで図７（１）に示すように、各弾性
表面波装置の形成領域１３２ａには、当該領域を分断す
る電極分離穴１３３を形成する。ここで、隣接する電極
分離穴１３３が相互に干渉しないように各電極分離穴１
３３を形成すれば、金属基板１３２の剛性が高くなって
取り扱いが容易になり、また弾性表面波装置における外
部電極の位置精度を向上することができる。As shown in FIG. 7B, the external electrode of the surface acoustic wave device needs to be formed separately on the positive electrode side and the negative electrode side. Therefore, as shown in FIG. 7A, an electrode separation hole 133 that divides the surface acoustic wave device forming region 132a is formed in the forming region 132a. Here, the electrode separation holes 1 are arranged so that the adjacent electrode separation holes 133 do not interfere with each other.
When 33 is formed, the rigidity of the metal substrate 132 is increased, the handling is facilitated, and the positional accuracy of the external electrodes in the surface acoustic wave device can be improved.
【００４０】次に、図６（２）に示すように、圧電基板
１１０に形成した封止用電極１１８とガラス基板１２０
とを陽極接合する。圧電基板１１０もガラス基板１２０
と同様に、弾性表面波装置複数個分の大きさに形成し、
弾性表面波装置１個分の形成領域１１０ａを複数設定す
る。そして各弾性表面波装置の形成領域１１０ａには、
ＩＤＴ電極および電極パッドを形成するとともに、これ
を取り囲むように封止用電極１１８を形成する。図８に
第２実施形態における封止用電極の説明図を示す。封止
用電極１１８は、各弾性表面波装置の形成領域１１０ａ
の境界線に沿って格子状に形成する。なお、各形成領域
１１０ａの境界線をまたぐように封止用電極１１８を形
成することにより、後に境界線で切断する際にダイシン
グソーが封止用電極１１８を破壊することがなくなる。Next, as shown in FIG. 6B, the sealing electrode 118 formed on the piezoelectric substrate 110 and the glass substrate 120.
And anodic bonding. The piezoelectric substrate 110 is also the glass substrate 120.
Similarly, the surface acoustic wave device is formed into the size of a plurality of devices,
A plurality of formation regions 110a for one surface acoustic wave device are set. Then, in the formation region 110a of each surface acoustic wave device,
An IDT electrode and an electrode pad are formed, and a sealing electrode 118 is formed so as to surround the IDT electrode and the electrode pad. FIG. 8 shows an explanatory view of the sealing electrode in the second embodiment. The sealing electrode 118 is provided in the formation region 110a of each surface acoustic wave device.
It is formed in a grid shape along the boundary line of. By forming the sealing electrode 118 so as to straddle the boundary line of each formation region 110a, the dicing saw does not break the sealing electrode 118 when cutting at the boundary line later.
【００４１】一方、格子状に連続形成した封止用電極１
１８の端部には封止用電極パッド１１９が接続され、封
止用電極１１８全体への通電が可能とされている。よっ
て、この封止用電極パッド１１９と上述した金属基板１
３２との間に電圧を印加することにより、封止用電極１
１８とガラス基板１１２とを陽極接合することができ
る。On the other hand, the sealing electrode 1 continuously formed in a grid pattern.
A sealing electrode pad 119 is connected to the end portion of 18 so that the entire sealing electrode 118 can be energized. Therefore, this sealing electrode pad 119 and the above-described metal substrate 1
By applying a voltage between 32 and 32, the sealing electrode 1
18 and the glass substrate 112 can be anodically bonded.
【００４２】最後に、各形成領域の境界線で切断し、図
６（３）に示すような１個ずつの弾性表面波装置に分離
する。上記のように構成した第２実施形態に係る弾性表
面波装置の製造方法により、同時に複数個の弾性表面波
装置を製造することができるので、製造コストの削減が
可能となる。Finally, cutting is performed at the boundary line of each formation region, and each surface acoustic wave device is separated as shown in FIG. 6 (3). By the method of manufacturing a surface acoustic wave device according to the second embodiment configured as described above, a plurality of surface acoustic wave devices can be manufactured at the same time, so that the manufacturing cost can be reduced.
【００４３】[0043]
【発明の効果】圧電基板のＳＡＷ伝搬面にＩＤＴ電極お
よびこのＩＤＴ電極に通電する電極パッドを形成し、前
記ＳＡＷ伝搬面の周縁部に封止用電極を形成し、前記Ｓ
ＡＷ伝搬面を気密に保持するキャップ部材を形成し、前
記電極パッドと前記キャップ部材を挟んで反対側の外部
電極形成位置とを連通する貫通孔を前記キャップ部材に
形成し、前記貫通孔に導電性材料を挿入し、外部電極と
しての金属板を前記外部電極形成位置に配置して前記キ
ャップ部材と陽極接合し、さらに前記封止用電極と前記
キャップ部材とを陽極接合する構成としたので、気密信
頼性の確保が可能となり、コスト削減が可能となり、ま
た機械的強度に優れた弾性表面波装置を提供することが
できる。EFFECTS OF THE INVENTION An IDT electrode and an electrode pad for energizing the IDT electrode are formed on the SAW propagation surface of a piezoelectric substrate, and a sealing electrode is formed on the peripheral portion of the SAW propagation surface.
A cap member that holds the AW propagation surface airtight is formed, and a through hole that connects the electrode pad and an external electrode formation position on the opposite side with the cap member sandwiched is formed in the cap member, and the through hole is electrically conductive. Since a metallic material is inserted, a metal plate as an external electrode is arranged at the external electrode forming position to be anodically bonded to the cap member, and further, the sealing electrode and the cap member are anodically bonded, Airtight reliability can be ensured, cost can be reduced, and a surface acoustic wave device having excellent mechanical strength can be provided.
【図１】 第１実施形態に係る弾性表面波装置の説明図
であり、（１）はＡ−Ａ線における側面断面図であり、
（２）はＢ−Ｂ線における底面断面図である。FIG. 1 is an explanatory view of a surface acoustic wave device according to a first embodiment, (1) is a side sectional view taken along line AA,
(2) is a bottom cross-sectional view taken along the line BB.
【図２】 反射器を形成した弾性表面波装置の、Ｂ−Ｂ
線相当部分における底面断面図である。FIG. 2 is a BB of a surface acoustic wave device having a reflector.
It is a bottom face sectional view in a line equivalent part.
【図３】 第１実施形態に係る弾性表面波装置の製造方
法のフローチャートである。FIG. 3 is a flowchart of a method of manufacturing the surface acoustic wave device according to the first embodiment.
【図４】 第１実施形態に係る弾性表面波装置の製造方
法の第１説明図である。FIG. 4 is a first explanatory diagram of the method of manufacturing the surface acoustic wave device according to the first embodiment.
【図５】 第１実施形態に係る弾性表面波装置の製造方
法の第２説明図である。FIG. 5 is a second explanatory view of the method of manufacturing the surface acoustic wave device according to the first embodiment.
【図６】 第２実施形態に係る弾性表面波装置の製造方
法の説明図である。FIG. 6 is an explanatory diagram of a method of manufacturing the surface acoustic wave device according to the second embodiment.
【図７】 第２実施形態における金属板の説明図であ
り、（１）は平面図の一部であり、（２）は弾性表面波
装置１個分の外部電極の平面図である。7A and 7B are explanatory views of a metal plate according to a second embodiment, FIG. 7A is a part of a plan view, and FIG. 7B is a plan view of external electrodes for one surface acoustic wave device.
【図８】 第２実施形態における封止用電極の平面図の
一部である。FIG. 8 is a part of a plan view of a sealing electrode according to a second embodiment.
【図９】 特開平８−２１３８７４号公報に係る弾性表
面波装置の側面断面図であり、（１）は側面断面図であ
り、（２）はその一部拡大図である。FIG. 9 is a side sectional view of a surface acoustic wave device according to Japanese Patent Application Laid-Open No. 8-213874, (1) is a side sectional view, and (2) is a partially enlarged view thereof.
１０………圧電基板、１２………ＳＡＷ伝搬面、１４…
……ＩＤＴ電極、１５………反射器、１５ａ………短絡
電極、１６………電極パッド、１８………封止用電極、
２０………ガラス基板、２４………貫通孔、２４ａ……
…電極パッド側開口部、２４ｂ………金属板側開口部、
２６………キャビティ、３２………金属板、３４………
金属ロウ材、３４ａ………気泡、４２………マイナス電
極、１１０………圧電基板、１１０ａ………形成領域、
１１８………封止用電極、１１９………封止用電極パッ
ド、１２０………ガラス基板、１２０ａ………形成領
域、１３２………金属基板、１３２ａ………形成領域、
１３３………電極分離穴、２１２………ＳＡＷ伝搬面、
２１６………電極パッド、２１８………封止用電極、２
２０………キャップ部材、２２４………貫通孔、２３２
………外部電極、２３２ａ………Ｃｕ膜、２３２ｂ……
…Ｔｉ膜、２３６………印刷電極10 ... Piezoelectric substrate, 12 ... SAW propagation surface, 14 ...
...... IDT electrode, 15 ... Reflector, 15a ... Short circuit electrode, 16 ... Electrode pad, 18 ... Sealing electrode,
20 ... Glass substrate, 24 ... Through hole, 24a ...
… Electrode pad side opening, 24b ……… Metal plate side opening,
26 ... Cavity, 32 ... Metal plate, 34 ...
Metal brazing material, 34a, ... Bubbles, 42, ... Negative electrode, 110, ... Piezoelectric substrate, 110a ,.
118 ... Encapsulating electrode, 119 ... Encapsulating electrode pad, 120 ... Glass substrate, 120a ... Forming region, 132 ... Metal substrate, 132a ... Forming region,
133 ... Electrode separation hole, 212 ... SAW propagation surface,
216 ... Electrode pad, 218 ... Sealing electrode, 2
20: Cap member, 224: Through hole, 232
……… External electrodes, 232a ……… Cu film, 232b ……
… Ti film, 236 ………… Printed electrode
Claims (8)
よびこのＩＤＴ電極に通電する電極パッドを形成し、前
記ＳＡＷ伝搬面の周縁部に封止用電極を形成し、 前記ＳＡＷ伝搬面を気密に保持するキャップ部材を形成
し、前記電極パッドと前記キャップ部材を挟んで反対側
の外部電極形成位置とを連通する貫通孔を前記キャップ
部材に形成し、 前記貫通孔に導電性材料を挿入し、外部電極としての金
属板を前記外部電極形成位置に配置して前記キャップ部
材と陽極接合し、さらに前記封止用電極と前記キャップ
部材とを陽極接合する、 ことを特徴とする弾性表面波装置の製造方法。1. An IDT electrode and an electrode pad for energizing the IDT electrode are formed on a SAW propagation surface of a piezoelectric substrate, and a sealing electrode is formed on a peripheral portion of the SAW propagation surface to hermetically seal the SAW propagation surface. A cap member for holding is formed, a through hole that connects the electrode pad and the external electrode forming position on the opposite side with the cap member interposed therebetween is formed in the cap member, and a conductive material is inserted into the through hole. A metal plate as an external electrode is arranged at the external electrode forming position to be anodically bonded to the cap member, and further, the sealing electrode and the cap member are anodically bonded to each other. Production method.
前記金属板と前記キャップ部材とを陽極接合し、加熱し
て前記導電性材料を熔解させつつ前記封止用電極と前記
キャップ部材とを陽極接合することを特徴とする請求項
１に記載の弾性表面波装置の製造方法。2. The metal plate and the cap member are anodically bonded while heating to melt the conductive material, and the sealing electrode and the cap member are heated to melt the conductive material. The method for manufacturing a surface acoustic wave device according to claim 1, further comprising:
配置して陽極接合した後、前記キャップ部材を上下反転
させ前記キャップ部材の下方に前記圧電基板を配置して
前記封止用電極を陽極接合することを特徴とする請求項
１または２に記載の弾性表面波装置の製造方法。3. The metal plate is disposed below the cap member for anodic bonding, and then the cap member is turned upside down to dispose the piezoelectric substrate below the cap member so that the sealing electrode is anodized. The method of manufacturing a surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is bonded.
開口部の寸法を前記電極パッド側開口部の寸法より大き
く形成し、 前記導電性材料は、前記貫通孔の前記外部電極形成位置
側開口部の寸法より小さく、なおかつ前記電極パッド側
開口部の寸法より大きく形成し、 前記貫通孔の前記外部電極形成位置側開口部を上にして
前記貫通孔に前記導電性材料を投入し、前記外部電極形
成位置に前記金属板を配置することにより前記導電性材
料を封入する、 ことを特徴とする請求項１ないし３のいずれかに記載の
弾性表面波装置の製造方法。4. The through hole is formed such that the size of the opening on the external electrode formation position side is larger than the size of the opening on the electrode pad side, and the conductive material is formed on the external electrode formation position side of the through hole. It is formed to be smaller than the dimension of the opening and larger than the dimension of the electrode pad side opening, and the conductive material is charged into the through hole with the external electrode forming position side opening of the through hole facing upward, The method for manufacturing a surface acoustic wave device according to claim 1, wherein the conductive material is enclosed by disposing the metal plate at a position where an external electrode is formed.
方法であって、 圧電基板における複数のＳＡＷ伝搬面にそれぞれＩＤＴ
電極およびこのＩＤＴ電極に通電する電極パッドを形成
し、前記各ＳＡＷ伝搬面の周縁部にそれぞれ封止用電極
を形成するとともに、全ての前記封止用電極に通電可能
な封止用電極パッドを形成し、 前記各ＳＡＷ伝搬面をそれぞれ気密に保持するキャップ
部材を一体形成し、前記各電極パッドと前記キャップ部
材を挟んで反対側の外部電極形成位置とを連通する複数
の貫通孔を前記キャップ部材に形成し、 前記各貫通孔に導電性材料を挿入し、前記各外部電極形
成位置に金属板を配置可能な金属基板を一体形成し、前
記金属基板と前記キャップ部材とを陽極接合し、さらに
前記各封止用電極と前記キャップ部材とを陽極接合した
後、前記各弾性表面波装置に切断する、 ことを特徴とする弾性表面波装置の製造方法。5. A method for simultaneously manufacturing a plurality of surface acoustic wave devices, wherein IDTs are respectively formed on a plurality of SAW propagation surfaces of a piezoelectric substrate.
An electrode and an electrode pad that conducts electricity to the IDT electrode are formed, and a sealing electrode is formed on each of the peripheral portions of the SAW propagation surfaces, and a sealing electrode pad that can conduct electricity to all the sealing electrodes is formed. And forming a cap member integrally holding each SAW propagation surface in an airtight manner, and forming a plurality of through holes communicating the respective electrode pads with the external electrode forming positions on the opposite side with the cap member interposed therebetween. Forming a member, inserting a conductive material into each of the through holes, integrally forming a metal substrate capable of disposing a metal plate at each external electrode formation position, anodically bonding the metal substrate and the cap member, Further, after the respective sealing electrodes and the cap member are anodically bonded, the surface acoustic wave device is cut into the surface acoustic wave devices.
面に形成したＩＤＴ電極およびこのＩＤＴ電極に導通す
る電極パッドと、前記ＳＡＷ伝搬面の周縁部に形成した
封止用電極と、 この封止用電極に陽極接合され前記ＳＡＷ伝搬面を気密
に保持するキャップ部材と、前記電極パッドと前記キャ
ップ部材を挟んで反対側の外部電極形成位置とを連通す
る前記キャップ部材に穿設された貫通孔と、 前記外部電極として前記キャップ部材に陽極接合された
金属板と、前記貫通孔の内部に配置され前記金属板と前
記電極パッドとを導通する導電性材料と、 を有することを特徴とする弾性表面波装置。6. A piezoelectric substrate, an IDT electrode formed on the SAW propagation surface of the piezoelectric substrate, an electrode pad conducting to the IDT electrode, a sealing electrode formed on the peripheral portion of the SAW propagation surface, and A cap member that is anodically bonded to a stop electrode and that hermetically holds the SAW propagation surface, and a penetrating hole formed in the cap member that communicates the electrode pad and the external electrode formation position on the opposite side with the cap member interposed therebetween. A hole, a metal plate anodically bonded to the cap member as the external electrode, and a conductive material disposed inside the through hole to electrically connect the metal plate and the electrode pad. Surface acoustic wave device.
開口部の寸法が前記電極パッド側開口部の寸法より大き
く形成されていることを特徴とする請求項６に記載の弾
性表面波装置。7. The surface acoustic wave device according to claim 6, wherein the through hole is formed such that the size of the opening on the external electrode formation position side is larger than the size of the opening on the electrode pad side. .
性膜を有することを特徴とする請求項６または７に記載
の弾性表面波装置。8. The surface acoustic wave device according to claim 6, further comprising a conductive film formed on an inner peripheral surface of the through hole.
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|---|---|---|---|
| JP2001302315A JP3975430B2 (en) | 2001-09-28 | 2001-09-28 | Manufacturing method of surface acoustic wave device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001302315A JP3975430B2 (en) | 2001-09-28 | 2001-09-28 | Manufacturing method of surface acoustic wave device |
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| Publication Number | Publication Date |
|---|---|
| JP2003110391A true JP2003110391A (en) | 2003-04-11 |
| JP3975430B2 JP3975430B2 (en) | 2007-09-12 |
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ID=19122579
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|---|---|---|---|
| JP2001302315A Expired - Fee Related JP3975430B2 (en) | 2001-09-28 | 2001-09-28 | Manufacturing method of surface acoustic wave device |
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| Country | Link |
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| EP1742353A1 (en) * | 2005-07-06 | 2007-01-10 | Seiko Epson Corporation | Method for manufacturing a piezoelectric vibration device |
| EP1783902A2 (en) * | 2005-10-31 | 2007-05-09 | Samsung Electronics Co., Ltd. | Wafer level package for surface acoustic wave device and fabrication method thereof |
| US7554242B2 (en) | 2005-01-17 | 2009-06-30 | Seiko Epson Corporation | Surface acoustic wave chip, surface acoustic wave device, and manufacturing method for implementing the same |
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| DE102004042782B4 (en) * | 2003-10-27 | 2010-02-18 | Mitsubishi Denki K.K. | Driver circuit and semiconductor device |
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2001
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004042782B4 (en) * | 2003-10-27 | 2010-02-18 | Mitsubishi Denki K.K. | Driver circuit and semiconductor device |
| US7554242B2 (en) | 2005-01-17 | 2009-06-30 | Seiko Epson Corporation | Surface acoustic wave chip, surface acoustic wave device, and manufacturing method for implementing the same |
| KR100822096B1 (en) * | 2005-07-06 | 2008-04-15 | 세이코 엡슨 가부시키가이샤 | Method for manufacturing a piezoelectric vibration device |
| EP1742353A1 (en) * | 2005-07-06 | 2007-01-10 | Seiko Epson Corporation | Method for manufacturing a piezoelectric vibration device |
| US7421767B2 (en) | 2005-07-06 | 2008-09-09 | Seiko Epson Corporation | Method for manufacturing a piezoelectric vibration device |
| EP1783902A3 (en) * | 2005-10-31 | 2008-01-23 | Samsung Electronics Co., Ltd. | Wafer level package for surface acoustic wave device and fabrication method thereof |
| EP1783902A2 (en) * | 2005-10-31 | 2007-05-09 | Samsung Electronics Co., Ltd. | Wafer level package for surface acoustic wave device and fabrication method thereof |
| US7755151B2 (en) | 2005-10-31 | 2010-07-13 | Samsung Electronics Co., Ltd. | Wafer level package for surface acoustic wave device and fabrication method thereof |
| US7622684B2 (en) | 2005-11-02 | 2009-11-24 | Panasonic Corporation | Electronic component package |
| US7652214B2 (en) | 2005-11-02 | 2010-01-26 | Panasonic Corporation | Electronic component package |
| JP2009164153A (en) * | 2007-12-28 | 2009-07-23 | Kyocera Kinseki Corp | Through hole filling method for substrate for electronic component |
| EP2475053A1 (en) * | 2009-09-01 | 2012-07-11 | Tohoku University | Wiring connection method and functional device |
| EP2475053A4 (en) * | 2009-09-01 | 2014-09-17 | Univ Tohoku | Wiring connection method and functional device |
| CN109004083A (en) * | 2018-08-10 | 2018-12-14 | 付伟 | Chip-packaging structure and preparation method thereof with single cofferdam and scolding tin |
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