JP2009161401A5 - - Google Patents
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- Publication number
- JP2009161401A5 JP2009161401A5 JP2008001044A JP2008001044A JP2009161401A5 JP 2009161401 A5 JP2009161401 A5 JP 2009161401A5 JP 2008001044 A JP2008001044 A JP 2008001044A JP 2008001044 A JP2008001044 A JP 2008001044A JP 2009161401 A5 JP2009161401 A5 JP 2009161401A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- content
- producing
- impurity element
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 49
- 239000012535 impurity Substances 0.000 claims 29
- 238000004519 manufacturing process Methods 0.000 claims 21
- 229910052783 alkali metal Inorganic materials 0.000 claims 6
- 150000001340 alkali metals Chemical class 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 150000003839 salts Chemical class 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 4
- 229910021482 group 13 metal Inorganic materials 0.000 claims 3
- 230000000737 periodic effect Effects 0.000 claims 3
- 239000000155 melt Substances 0.000 claims 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- 150000001342 alkaline earth metals Chemical class 0.000 claims 1
- 150000001450 anions Chemical class 0.000 claims 1
- 150000001768 cations Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000007791 liquid phase Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008001044A JP5066640B2 (ja) | 2008-01-08 | 2008-01-08 | 不純物の含有量が制御された単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008001044A JP5066640B2 (ja) | 2008-01-08 | 2008-01-08 | 不純物の含有量が制御された単結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009161401A JP2009161401A (ja) | 2009-07-23 |
| JP2009161401A5 true JP2009161401A5 (OSRAM) | 2011-03-10 |
| JP5066640B2 JP5066640B2 (ja) | 2012-11-07 |
Family
ID=40964461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008001044A Expired - Fee Related JP5066640B2 (ja) | 2008-01-08 | 2008-01-08 | 不純物の含有量が制御された単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5066640B2 (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6386409B2 (ja) * | 2014-03-31 | 2018-09-05 | 日本碍子株式会社 | １３族窒化物自立基板へのドーパント導入方法およびｌｅｄ素子の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192795A (ja) * | 1975-02-12 | 1976-08-14 | Ryukaaensoshosozai | |
| JPS6058273B2 (ja) * | 1983-04-07 | 1985-12-19 | 昭和電工株式会社 | 立方晶ｂｎ砥粒の改質法 |
| JPS63108730A (ja) * | 1986-10-27 | 1988-05-13 | Sony Corp | ３−５族化合物半導体のアニ−ル法 |
| JPH02129098A (ja) * | 1988-11-08 | 1990-05-17 | Stanley Electric Co Ltd | 不純物添加半導体結晶の製造方法 |
| JP2004224600A (ja) * | 2003-01-20 | 2004-08-12 | Matsushita Electric Ind Co Ltd | Ｉｉｉ族窒化物基板の製造方法および半導体装置 |
| JP4624381B2 (ja) * | 2007-07-12 | 2011-02-02 | 住友電気工業株式会社 | ＧａＮ結晶の製造方法 |
-
2008
- 2008-01-08 JP JP2008001044A patent/JP5066640B2/ja not_active Expired - Fee Related
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