JP2009149929A - Sputtering system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the use efficiency of a target, relating to a technical field of a sputtering apparatus, more particularly concerning a sputtering system of a passage film deposition. <P>SOLUTION: Among first, second magnetron apparatuses 20<SB>1</SB>, 20<SB>2</SB>, 81, 82, one or both magnetron apparatuses have second ring magnets 47 in addition to central magnets 45, and first ring magnets 46. The central magnets 45 exist on the ring inner side of the second ring magnets 47. The number of the regions that the one magnetron apparatus 20<SB>1</SB>, 20<SB>2</SB>, 81, 82 form on the target surface is large. Also, the erosion regions formed that the first, second magnetron apparatus 20<SB>1</SB>, 20<SB>2</SB>, 81, 82 form do not overlap one another, and therefore, the use efficiency of the target is high. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a technical field of a sputtering apparatus, and more particularly, to a through film deposition type sputtering apparatus.

  In a sputtering apparatus that forms a thin film on the surface of a large substrate, a passing-type sputtering apparatus is used in which a thin film is formed while passing through the front of the target material while facing the target material.

In such a sputtering apparatus, in order to expand the erosion region of the target, a configuration is adopted in which a magnetron magnet apparatus disposed on the back surface of the target material is moved. For example, a magnetron is formed along the longitudinal direction on the back surface of the target material. A traveling track of the magnet device is laid, and a large number of small-diameter magnetron magnet devices travel on the traveling track, and a wide region on the back surface of the target material faces the magnetron magnet device, so that the erosion region is expanded.
JP 2003-293130 A Japanese Patent Laid-Open No. 7-18435 Japanese Patent Laid-Open No. 2005-336520

  However, even if the magnet is run as described above, the central portion and the outer peripheral portion of the target are not easily sputtered, and there is a limit to improving the use efficiency of the target.

The first invention includes a plate-like first target, a first magnetron magnet device, a second magnetron magnet device having a smaller diameter than the first magnetron magnet device, and the first and second magnetrons. A sputtering apparatus having a magnet moving device for repeatedly passing the back surface position of the first target through the magnet device, wherein at least one of the first and second magnetron magnet devices is a central magnet And ring-shaped first and second ring magnets, wherein the first and second ring magnets are parallel to the surface of the first target, respectively. The center magnet is disposed inside, the first ring magnet is disposed inside the ring of the second ring magnet, and the center magnet and the first and second ring magnets are: Of the poles and N poles, one magnetic pole is formed on the surface on the first target side, and the other magnetic pole is formed on the surface on the opposite side to the first target, and the central magnet and the first ring magnet The sputtering apparatus in which the polarities of the magnetic poles on the first target side surface are opposite to each other, and the first and second ring magnets are opposite in polarity to the magnetic poles on the first target side surface It is.
A first invention is a sputtering apparatus, wherein a plurality of the first and second magnetron magnet devices are provided, and each of the first and second magnetron magnet devices moves around and backs the first target. Is a sputtering apparatus configured to pass repeatedly.
1st invention is a sputtering device, Comprising: It has a 2nd target, Said 1st, 2nd magnetron magnet apparatus is both said 1st, 2nd targets by the said round movement. A sputtering apparatus configured to pass through the back surface.
A first invention is a sputtering apparatus, wherein the first and second magnetron magnet apparatuses are configured to reciprocate.
According to a second aspect of the present invention, one or more first magnetron magnet devices are arranged, the first magnet traveling track on which the first magnetron magnet device moves, and the first magnetron magnet device are different from each other. A second magnet traveling track in which the second magnetron magnet device is disposed and the second magnetron magnet device is moved; and a first target in which a part of the first and second magnet traveling tracks is located on the back surface And at least one of the first and second magnetron magnet devices includes a center magnet and ring-shaped first and second ring magnets, The first and second ring magnets are respectively parallel to the surface of the first target, the central magnet is disposed inside the ring of the first ring magnet, and the second ring magnet The first ring magnet is disposed on the inner side of the ring, and the center magnet and the first and second ring magnets have one magnetic pole on the surface on the first target side of the S and N poles. , The other magnetic pole is formed on the surface opposite to the first target, and the center magnet and the first ring magnet have the polarities of the magnetic poles on the first target side opposite to each other, The first and second ring magnets are sputtering apparatuses in which the polarities of the magnetic poles on the first target side surface are opposite to each other.
A second invention is a sputtering apparatus, wherein the first and second magnet traveling tracks are each formed in an annular shape, and the first and second magnetron magnet devices are connected to the first and second magnet traveling tracks. The sputtering apparatus is configured to move around each of the two.
2nd invention is a sputtering device, Comprising: Said 1st magnet running track is a sputtering device located inside said 2nd magnet running track.
A second invention is a sputtering apparatus, wherein the first and second magnet traveling tracks have a second target located on the back surface.

  The present invention is configured as described above, and the first invention has two or more magnetron magnet devices (first and second magnetron magnet devices) having different sizes.

  In the first invention, at least the first magnetron magnet device forms two or more erosion regions on the first target surface. The first and second magnetron magnet devices are arranged so that the erosion region formed on the first target surface by the second magnetron magnet device is located between the erosion regions formed by the first magnetron magnet device. For example, since the number of erosion areas increases, the use efficiency of the target increases.

  In the second invention, a plurality of magnet traveling tracks are disposed on the back side of one to a plurality of targets, and a part of each magnet traveling track is disposed at a position directly behind each target. A magnetron magnet device is attached to each magnet trajectory, and each magnetron magnet device moves directly behind the target so that a plurality of erosion regions are formed on the target surface, thereby improving the use efficiency of the target. It has become.

  As the number of ring magnets increases, the number of erosion regions on the target increases, and the use efficiency of the target improves. By arranging the magnet traveling trajectory so that the erosion regions by the magnetron magnet device on each magnet traveling trajectory do not overlap, the target usage efficiency is further improved.

First, the magnetron magnet device used in the present invention will be described.
The sputtering apparatus according to the first and second inventions described later has two or more types of magnetron magnet apparatuses (first and second magnetron magnet apparatuses).

FIG. 2A is a cross-sectional view showing an example of the magnetron magnet devices 20 ₁ , 20 ₂ , 81, 82 used in the first and second inventions.
The magnetron magnet devices 20 ₁ , 20 ₂ , 81 and 82 each have a first ring magnet 46 and a center magnet 45. The first ring magnet 46 has a ring shape. The center magnet 45 has a similar shape whose outer periphery is smaller than the inner ring periphery of the first ring magnet 46.

  The first ring magnet 46 and the center magnet 45 are such that the center of the center magnet 45 is positioned on the ring center axis C of the first ring magnet 46, one bottom surface of the ring shape of the first ring magnet 46, and the center magnet One side of 45 is attached so as to come into contact with the surface of the plate-shaped metal yoke 40. Accordingly, the center magnet 45 is disposed inside the ring of the first ring magnet 46 and is separated from the first ring magnet 46.

Of the first and second magnetron magnet devices 20 ₁ , 20 ₂ , 81, 82 described later, one or both of the magnetron magnet devices are in addition to the center magnet 45 and the first ring magnet 46, and FIG. As shown in FIG. 2, the ring-shaped second ring magnet 47 is provided.

  The ring inner periphery of the second ring magnet 47 has a similar shape larger than the ring outer periphery of the first ring magnet 46, and the ring center axis coincides with the ring center axis C of the first ring magnet 46. Thus, one bottom surface of the ring shape is attached in contact with the surface of the metal yoke 40. Therefore, the first ring magnet 46 is located inside the ring of the second ring magnet 47, and the first and second ring magnets 46, 47 are separated from each other.

  The first and second ring magnets 46 and 47 and the center magnet 45 are respectively formed with an S pole or an N pole on the bottom face (back face) of the ring on the metal yoke 40 side, and the back face on the ring bottom face (front face) on the opposite side. Magnetic poles having opposite polarities are formed.

  When the polarity of the magnetic poles on the surfaces of the center magnet 45 and the second ring magnet 47 is the S pole, the polarity of the magnetic poles on the surface of the first ring magnet 46 is the N pole. When the polarities of the magnetic poles on the surfaces of the center magnet 45 and the second ring magnet 47 are N poles, the polarities of the magnetic poles on the surface of the first ring magnet 46 are S poles.

  That is, the magnets adjacent to each other (the center magnet 45 and the first ring magnet 46, or the first and second ring magnets 46 and 47) have different polarities on the surface, and the center magnet 45 will be described later. When the surfaces of the first and second ring magnets 46 and 47 are directed toward the target, a ring-shaped magnetic field line tunnel is formed on the target surface.

Note that one of the first and second magnetron magnet devices 20 ₁ , 20 ₂ , 81, 82 is replaced with a magnetron magnet device that does not have the second ring magnet 47 as shown in FIG. You may comprise.
Next, a sputtering apparatus according to the first aspect of the invention using the magnetron magnet apparatus will be described.

  FIG. 1 shows a sputtering apparatus 10 according to the first invention, which has a vacuum chamber 17. A substrate moving track 29 is provided inside the vacuum chamber 17. The substrate moving track 29 is provided with a substrate holder 19. The substrate holder 19 is configured to move in the vacuum chamber 17 along the substrate moving track 29 when a driving device such as a motor (not shown) is operated. Has been.

Plate-shaped first and second targets 21 and 22 that are attached to the backing plate 18 and have exposed surfaces are disposed at positions facing the substrate movement track 29.
The first and second targets 21 and 22 are arranged such that the first target 21 is located upstream of the substrate movement track 29 and the second target 22 is located downstream of the substrate movement track 29. 8, and the substrate 8 is passed so that the surface of the substrate 8 faces the surfaces of the first and second targets 21, 22, the surface of the substrate 8 becomes the surface of the first target 21 and the second target 22. It arrange | positions so that it may face in this order on the surface.

The first and second targets 21 and 22 are rectangular and are arranged such that the longitudinal direction thereof is orthogonal to the moving direction of the substrate 8, and the substrate 8 is the long side of the first and second targets 21 and 22. To be crossed.
A magnet traveling track 23 is laid on the back surfaces of the first and second targets 21 and 22, and the magnet traveling track 23 has first and second magnetron magnet devices 20 ₁ and 20 having different sizes. One or _two of each ₂ are attached.

The magnetron magnet devices are arranged side by side along the magnet traveling track 23, and the first and second magnetron magnet devices 20 ₁ and 20 ₂ are moved by the magnet moving device 13 without changing the order. It is comprised so that it may move on 23.

FIG. 3 is a plan view for explaining the positional relationship between the first and second magnetron magnet devices 20 ₁ , 20 ₂ and the target. In FIG. 3 and FIGS. The traveling tracks 23 are omitted.

Here, the magnet traveling track 23 has a track shape and has a straight portion and a semicircular portion. The straight line portion is disposed along the long side of the first and second targets 21 and 22 at a position directly behind the first and second targets 21 and 22.
The semicircular portion is disposed at a position separated from the back of the first and second targets 21 and 22, and both ends of the straight portion are connected to the semicircular portion, thereby forming an annular shape.

When the plurality of first and second magnetron magnet devices 20 ₁ , 20 ₂ travel in the same direction along the magnet travel track 23, the first and second magnetron magnet devices 20 ₁ , 20 ₂ have the same magnet travel track. 23 orbit around.

When moving around a plurality of times, the first and second magnetron magnet devices 20 ₁ , 20 ₂ cross the short side of one of the first or second targets 21, 22. , Enters the position directly behind the second target 21, 22, passes the back surface position of the first target 21, 22 in the direction parallel to the long side, and crosses the other short side to the first or second Escape from the position directly behind the targets 21 and 22.

  Then, the direction is changed at a position away from the back of the first and second targets 21 and 22 and enters the back of the other target. Such an operation is repeated, so that the position directly behind the first or second target 21 or 22 and the position separated from the position directly behind the first or second target 21 or 22 pass alternately.

  The surfaces of the first and second targets 21 and 22 are located in the same plane H. The first and second ring magnets 46 and 47 and the center magnet 45 described above are arranged in parallel with the plane H on which the surfaces of the first and second targets 21 and 22 are located, and the plane and the ring center axis C are It is vertical.

The first and second ring magnets 46 and 47 and the center magnet 45 are fixed to the metal yoke 40. Even if the first and second magnetron magnet devices 20 ₁ and 20 ₂ move, the first and second magnets The positional relationship between the ring magnets 46 and 47 and the center magnet 45 does not change.

Further, the magnet traveling track 23 is extended in a plane parallel to the plane on which the surfaces of the first and second targets 21 and 22 are located, and the first and second magnetron magnet devices 20 ₁ and 20 ₂ move. Even so, the first and second ring magnets 46 and 47 and the center magnet 45 remain parallel to the plane H on which the surfaces of the first and second targets 21 and 22 are located.
In the first and second ring magnets 46 and 47 and the center magnet 45, the bottom surface (surface) opposite to the metal yoke 40 is directed to a plane H on which the surfaces of the first and second targets 21 and 22 are located. ing.

  As described above, since the magnets adjacent to each other have different polarities on the surface, the center magnet 45 and the second ring magnet 47 are on the plane H on which the surfaces of the first and second targets 21 and 22 are located. The south pole of the first ring magnet 46 and the north pole of the first ring magnet 46 are respectively directed, or the north pole of the center magnet 45 and the second ring magnet 47 and the south pole of the first ring magnet 46 are respectively directed.

When the first and second magnetron magnet devices 20 ₁ and 20 ₂ pass the back surface positions of the first or second targets 21 and 22, the surfaces of the first and second ring magnets 46 and 47 and the center magnet are used. The front surface of 45 is close to the back surfaces of the first and second targets 21 and 22, the lines of magnetic force formed between the first ring magnet 46 and the center magnet 45, and the first and second ring magnets 46 and 47. Magnetic field lines formed between the first and second targets 21 and 22 leak to the surface.

  The first ring magnet 46 and the center magnet 45 have different magnetic poles directed toward the surface of the first or second target 21, 22, and the first and second ring magnets 46, 47 have different magnetic poles first or second. Therefore, ring-shaped magnetic force line tunnels are formed on the surfaces of the first and second targets 21 and 22.

  The sputtering apparatus 10 of the first invention is configured as described above. When forming a thin film, the vacuum chamber 17 is evacuated by the vacuum evacuation system 15 and the gas introduction system 16 to the vacuum chamber 17 is evacuated. Sputtering gas is introduced into the first and second targets 21 and 22 through the backing plate 18 by the sputtering power source 14 while sputtering the surfaces of the first and second targets 21 and 22. When the substrate 8 held by the substrate holder 19 is carried into the vacuum chamber 17 and moved inside the vacuum chamber 17 while facing the surfaces of the first and second targets 21 and 22, the surface of the substrate 8 becomes the first and first surfaces. When passing through the position where the two targets 21 and 22 face each other, the sputtered particles that have jumped out from the first and second targets 21 and 22 reach the surface of the substrate 8 and form a thin film. It is.

At the time of sputtering, the first and second magnetron magnet devices 20 ₁ and 20 ₂ are located on the back surfaces of the first and second targets 21 and 22 along the long sides of the first and second targets 21 and 22. As shown schematically in FIG. 4, the first and second magnetron magnet devices 20 ₁ and 20 ₂ move linearly, and a plurality of strips are formed on the surfaces of the first and second targets 21 and 22, respectively. Erosion regions (regions where the target surface is sputtered in a large amount and the surface is deeply dug) 35a to 35d and 36a to 36d are formed.

  The number of erosion regions formed on the target surface by one magnetron magnet device of FIG. 2A is four. Two magnetron magnet devices in FIG. 2B form two erosion regions on the target surface.

And erosion region where the first magnetron magnet assembly 20 ₁ is formed and the erosion region where the second magnetron magnet assembly 20 ₂ is formed do not overlap, the first, the second magnetron magnet assembly 20 _1, 20 ₂ In the case where both are the magnetron magnet apparatus of FIG. 2A, the number of erosion regions 35a to 35d and 36a to 36d formed on one target 21 and 22 is 8, one of which is FIG. 2A. In the case of the magnetron magnet device shown in FIG. 2B, the number of erosion regions formed on one target 21 and 22 is six.

  Even if a plurality of magnetron magnet devices in which magnets of the same size are arranged are moved so that their centers run on the same straight line, the erosion regions formed by these magnetron magnet devices overlap each other, resulting in four erosion regions. Only formed.

On the other hand, in the first invention, even if the first and second magnetron magnet devices 20 ₁ and 20 ₂ are changed in size to move on the same straight line, the first magnetron magnet device 20 can be moved. center line of the erosion region 35a~35d _{where 1} is formed with (track width direction of the center of the band of the erosion region is moved), and the center line of the erosion region 36a~36d the second magnetron magnet assembly 20 ₂ form It is designed not to overlap.

For example, a first second ring magnet 47 of the magnetron magnet assembly 20 _1, a second magnetron second ring magnet 47 of the magnet unit 20 _2, the first magnetron magnet assembly 20 ₁ first ring magnet 46, a second magnetron magnet assembly 20 ₂ of the first ring magnet 46, a first magnetron magnet assembly 20 _first central magnet 45, a second magnetron magnet assembly 20 and _second central magnet 45, the size different, is smaller in the order described, first, even if the second magnetron magnet assembly 20 _1, 20 ₂ of the center driving on the same straight line, is formed by the first magnetron magnet device 20 ₁ between the center line of the erosion region 35a to 35d, is disposed the center line of the erosion region 36a~36d formed by the second magnetron magnet assembly 20 ₂ 1 or 2 or more To have.

Therefore, erosion region 36a~36d formed by erosion region 35a~35d and a second magnetron magnet assembly 20 ₂ formed by the first magnetron magnet device 20 _1, since at least part do not overlap, the target surface A wide area is sputtered uniformly, and the target usage efficiency is improved.

  Each erosion area | region 35a-35d, 36a-36d is parallel to the long side of the 1st, 2nd targets 21 and 22, and a part overlaps in fact and there is no area | region (non-erosion area | region) which is not sputtered.

The moving direction of the first and second magnetron magnet devices 20 ₁ and 20 ₂ on the back surface of the first and second targets 21 and 22 is perpendicular to the moving direction of the substrate 8, and the moving speed of the substrate 8 is set to the first moving speed. If it is made slower than the movement of the _first and second magnetron magnet devices 20 ₁ and 20 _2, a thin film having a good film thickness distribution is formed on the surface of the substrate 8.

As shown in FIG. 5, the magnet running track 23 to be annularly within the true back position of a single target 41 is provided, first, the second magnetron magnet assembly 20 _1, 20 _2, of one When circularly moving at the position of the back surface of the target 41, four annular concentric erosion regions are obtained. However, since the erosion region becomes shorter as it is on the inner side, as shown in FIG. On the back side, both the forward path and the backward path are provided along the long side direction so that both ends of each erosion region terminate on the short side of the target 42, and the direction is changed between the forward and backward directions. The first and second magnetron magnet devices 20 ₁ , 20 ₂ cross the short side of the target and enter the back side of the target 42, and the other short side. Across the What is necessary is just to escape from the position behind the target 42.

In the above embodiment, a magnet running path 23 is annular, first, ₁ second magnetron magnet assembly 20, although 20 ₂ has circular movement, as shown in FIG. 7, the longitudinal direction of the rectangular target 43 And a linear magnet traveling track 23 parallel to the center of the target 43 in the width direction, and the first and second magnetron magnet devices 20 ₁ , 20 ₂ may be repeatedly reciprocated along the magnet traveling track 23. .

First magnetron magnet assembly 20 _1, or second ends of the reciprocating movement of the magnetron magnet assembly 20 ₂ provided a magnet running track 23 to be positioned outside of the target, the first magnetron magnet device 20 ₁ and the If second magnetron magnet assembly 20 ₂ are plural arranged, the same size as the magnet device reciprocation range between (the first magnetron magnet assembly 20 ₁ reciprocation range between and the second magnetron magnet assembly 20 ₂ of When the reciprocating ranges are overlapped, the erosion regions are connected to form a straight line.

Reference numerals 31 to 34 in FIGS. 3 and 5 to 7 indicate movement paths at the centers of the first and second magnetron magnet devices 20 ₁ and 20 _{2. In} FIG. The centers of the magnetron magnet devices 20 ₁ and 20 ₂ reciprocate on the same straight line.

In the above embodiment, the first and second magnetron magnet devices 20 ₁ and 20 ₂ are used. However, in addition to the first and second magnetron magnet devices 20 ₁ and 20 ₂ , the first and second magnetron magnet devices 20 ₁ and 20 ₂ are used. When another magnetron magnet device having a size different from that of 20 ₁ and 20 ₂ is attached to the magnet traveling track 23 so that at least eight erosion regions that do not overlap at least partially are formed in total, the target surface becomes more uniform. Sputtered. Other magnetron magnet devices may be those shown in FIGS. 2 (a) and 2 (b).

Next, the sputtering apparatus of the second invention will be described.
FIG. 8 shows a sputtering apparatus 50 according to the second invention, which has a vacuum chamber 57 similar to the first invention, and a substrate moving track 85 is laid inside the vacuum chamber 57.

  Similarly to the first invention, a substrate holder 89 is attached to the substrate moving track 85, and when a driving device such as a motor (not shown) is operated, the substrate holder 89 moves along the substrate moving track 85 in the vacuum chamber 57. Configured to move.

  Similar to the first invention, plate-like first and second targets 61 and 62 having exposed surfaces are attached to the backing plate 68 at positions facing the substrate movement track 85 in the vacuum chamber 57. Are arranged.

  Similar to the first invention, the first and second targets 61 and 62 are arranged such that the first target 61 is located upstream of the substrate movement track 85 and the second target 62 is located downstream of the substrate movement track 85. When the substrate holder 89 holds the substrate 58 and moves the surface of the substrate 58 toward the first and second targets 61 and 62, the surface of the substrate 58 is the same as the surface of the first target 61. Passing through the surface of the second target 62 in this order.

The first and second targets 61 and 62 are rectangular, and are arranged so that the longitudinal direction thereof is orthogonal to the moving direction of the substrate 58 as in the first invention. The long sides of the first and second targets 61 and 62 are crossed.
First and second magnet traveling tracks 71 and 72 are arranged on the back surfaces of the first and second targets 61 and 62. A part of the first and second magnet traveling tracks 71 and 72 are respectively arranged at the position directly behind the first target 61. Similarly, the positions at the first and second positions are also directly behind the second target 62. The other part of the magnet traveling tracks 71 and 72 are respectively arranged.

The first and second magnet traveling tracks 71 and 72 are annular and have a track shape in which a straight portion and a semicircular portion are combined. The straight portions of the first and second magnet traveling tracks 71 and 72 are arranged at positions directly behind the first and second targets 61 and 62.
Here, the circumferential distance of the first magnet traveling track 71 is shorter than the circumferential distance of the second magnet traveling track 72, and the first magnet traveling track 71 is located inside the second magnet traveling track 72.

  One or a plurality of first and second magnetron magnet devices 81 and 82 are attached to the first and second magnet traveling tracks 71 and 72, respectively. The first and second magnetron magnet devices 81 and 82 are These are arranged along the first and second magnet traveling tracks 71 and 72, respectively.

  The first and second magnet traveling tracks 71 and 72 are connected to the magnet moving device 53, and the first and second magnetron magnet devices 81 and 82 are arranged on the first and second magnet traveling tracks 71 and 72, respectively. The first and second magnet traveling tracks 71 and 72 are configured to travel without changing the order and repeatedly move around.

  The first and second targets 61 and 62 have a rectangular shape, and the direction in which the substrate movement track 85 extends is orthogonal to the direction in which the long sides of the first and second targets 61 and 62 extend. The first and second magnet traveling tracks 71 and 72 located directly behind the second targets 61 and 62 are parallel to the long sides of the first and second targets 61 and 62.

  Accordingly, when the first and second magnetron magnet devices 81 and 82 move around and enter the true back position from the outside of the first and second targets 61 and 62, and when they escape from the true back position to the outside. The first and second magnetron magnet devices 81 and 82 cross the short sides of the first and second targets 61 and 62.

The semicircular portions of the first and second magnet traveling tracks 71 and 72 are disposed at positions separated from the backs of the first and second targets 61 and 62. Accordingly, the first and second magnetron magnets are disposed. When the devices 81 and 82 move around, the direction is changed outside the first and second targets 61 and 62, and enters from the first back position of the first and second targets 61 and 62 to the other back position. It is like that.
One or both of the first and second magnetron magnet devices 81 and 82 is the magnetron magnet device shown in FIG.

  Here, both the first and second magnetron magnet devices 81 and 82 (and other magnetron magnet devices to be described later) are constituted by the magnetron magnet device shown in FIG. 2A, and the center of each magnetron magnet device. The magnets 45, the first ring magnets 46, and the second ring magnets 47 have the same size.

  The first and second magnetron magnet devices 81 and 82 may have different sizes unless the erosion regions of the magnetron magnet devices moving on different magnet traveling tracks are formed at the same position.

  As in the first invention, the surfaces of the first and second targets 61 and 62 are located in substantially the same plane, and the first and second ring magnets 46 and 47 and the center magnet 45 are the first and second The surfaces of the two targets 61 and 62 are arranged in parallel to the plane h where the surfaces are located, and the plane h and the ring center axis c of the first and second ring magnets 46 and 47 are perpendicular.

  The surface of the first and second targets 61 and 62 is the one bottom surface (surface) of the first and second ring magnets 46 and 47 opposite to the metal yoke 40 and one surface (surface) of the center magnet 45. It is directed to the plane in which it is located.

  Similar to the first invention, the magnets adjacent to each other have different polarities on the surface, and the central magnet 45 and the second ring are on the plane h where the surfaces of the first and second targets 61 and 62 are located. The S pole of the magnet 47 and the N pole of the first ring magnet 46 are each directed, or the N pole of the center magnet 45 and the second ring magnet 47 and the S pole of the first ring magnet 46 are respectively directed. .

  FIG. 9 is a plan view for explaining the positional relationship between the first and second magnet traveling tracks 71 and 72 and the first and second targets 61 and 62, in which the metal yoke 40 is omitted. Yes.

  Similar to the first invention, when the first and second magnetron magnet devices 81 and 82 pass through the positions directly behind the first or second targets 61 and 62, the first and second ring magnets 46 are used. , 47 and the surface of the central magnet 45 are close to the back surfaces of the first and second targets 61, 62, and the magnetic field lines formed between the first ring magnet 46 and the central magnet 45, Magnetic field lines formed between the second ring magnets 46 and 47 leak to the surface of the first or second target 61 or 62.

  The first ring magnet 46 and the center magnet 45 have different magnetic poles directed to the surface of the first or second target 61, 62, and the first and second ring magnets 46, 47 have different magnetic poles in the first or second. Therefore, ring-shaped magnetic force line tunnels are formed on the surfaces of the first and second targets 61 and 62.

  The portion where the magnetic field line tunnel is formed has a large amount of sputtering. That is, the amount of sputtering is large at a position just above the middle between the first ring magnet 46 and the center magnet 45 and a position just above the center between the first and second ring magnets 46 and 47. Since the first and second ring magnets 46 and 47 are ring-shaped, the region where the sputtering amount is large is also ring-shaped.

  The sputtering apparatus 50 of the second invention is configured as described above. When forming a thin film, the vacuum chamber 57 is evacuated by the vacuum evacuation system 55 and the gas introduction system 56 to the vacuum chamber 57 is evacuated. A sputtering gas is introduced into the first electrode, and a voltage is applied to the first and second targets 61 and 62 via the backing plate 68 by the sputtering power source 54 to start sputtering the surfaces of the first and second targets 61 and 62. The substrate 58 held by the substrate holder 89 is carried into the vacuum chamber 57 while being sputtered, and the inside of the vacuum chamber 57 is moved while facing the surfaces of the first and second targets 61 and 62.

  When the surface of the substrate 58 passes through the positions facing the first and second targets 61 and 62, the sputtered particles that have jumped out of the first and second targets 61 and 62 reach the surface of the substrate 58, where A thin film is formed.

  At the time of sputtering, the first and second magnetron magnet devices 81 and 82 are linearly moved along the long sides at the positions directly behind the first and second targets 61 and 62. A region having a large amount of sputtering formed by 81 and 82 also moves linearly, and on the surface of the first and second targets 61 and 62, on both sides of the magnet traveling tracks 71 and 72, along the moving direction, The erosion area | region (area | region where a target surface is sputtered abundantly and the surface is dug deeply) is formed in a strip shape.

Here, the distance d between the moving path along which the center of the first magnetron magnet device 81 moves and the moving path along which the center of the second magnetron magnet device 82 moves is the center of the first magnetron magnet device 81. first, the distance s ₁ to the intermediate position of the second ring magnets 46 and 47, the distance from the center of the second magnetron magnet assembly 82 to an intermediate position between the first and second ring magnets 46 and 47 from The center line of the erosion regions 85a to 85d formed by the first magnetron magnet device 81 (orbit along which the center in the width direction of the erosion region moves) is made larger than the sum of s ₂ (s ₁ + s ₂ <d). The center lines of the erosion regions 86a to 86d formed by the second magnetron magnet device 82 are located outside the ring inside the ring of the magnet traveling track and do not overlap (FIG. 10).

  That is, in the second invention, the first and second magnetron magnet devices 81 and 82 move along different paths at the positions directly behind the first and second targets 61 and 62, so that the first magnetron magnet device The center lines of the erosion regions 85a to 85d formed by 81 and the center lines of the erosion regions 86a to 86d formed by the second magnetron magnet device 82 are not overlapped.

  Thus, since the erosion areas 85a to 85d and 86a to 86d of the first and second magnetron magnet devices 81 and 82 do not overlap, the number of erosion areas formed on each target is the first and second. When both of the magnetron magnet devices 81 and 82 are the magnetron magnet device of FIG. 2 (a), there are eight, and when one is the magnetron magnet device of FIG. 2 (a) and the other is the magnetron magnet device of FIG. 2 (b) Become six.

Since the second invention also has a large number of erosion regions, a wide region of the target surface is uniformly sputtered, and target use efficiency is improved.
The erosion regions 85a to 85d and 86a to 86d are parallel to the long sides of the first and second targets 61 and 62, and both ends are located on the short sides of the first and second targets 61 and 62. ing.

  The moving direction of the first and second magnetron magnet devices 81 and 82 on the back surface of the first and second targets 61 and 62 is perpendicular to the moving direction of the substrate 58, and the moving speed of the substrate 58 is set to be the first and second. If the moving speed of the second magnetron magnet devices 81 and 82 is set slower than that of the second magnetron magnet device 81, a thin film having a good film thickness distribution is formed on the surface of the substrate 58.

  In the second invention, in addition to the first and second magnet traveling tracks, a third magnet traveling track is arranged, and a part of the first to third magnet traveling tracks is directly behind the first and second targets. The first to third magnetron magnet devices located on the first to third magnet traveling tracks may move the positions directly behind the first and second targets.

  Furthermore, the magnetron magnet device moves on the magnet traveling track such that a fourth or more magnet traveling track is provided and a part of the four or more magnet traveling tracks is located directly behind the first and second targets. You may make it do.

  In addition, one or a plurality of other targets are added to the first and second targets, two or more magnet traveling tracks are arranged at the positions directly behind those targets, and the magnetron magnets travel on each magnet traveling track. You may let them.

  In short, in the second invention, a plurality of magnet traveling tracks may be arranged on the back surface of one or a plurality of targets, and different magnetron magnet devices may travel on each magnet traveling track. The plurality of magnet traveling tracks can be annular and arranged concentrically so as not to cross each other.

  When arranging the annular magnet traveling tracks, as shown in FIG. 11, the annular first and second magnet traveling tracks 73 and 74 are disposed so as to make a round at the position directly behind the target 63, and the first The second magnetron magnet devices 81 and 82 may move around at the position of the back surface of one target 63. In this case, a larger number (16 in this case) of circular concentric erosion regions than in FIG. 9 can be obtained, but the one-round distance becomes shorter as the erosion region located inside.

  On the other hand, as shown in FIG. 12, when the annular first and second magnet traveling tracks 75 and 76 are arranged with respect to one target 63, the first and second magnets are located directly behind the target 63. When the straight portions of the traveling tracks 75 and 76 are positioned and the semicircular portion is positioned outside the position directly behind the target 63, the erosion regions of the first and second magnetron magnet devices 81 and 82 are formed. Since both ends terminate on the short side of the target 63, the length becomes the same as the long side, and the length of the erosion region becomes long. In addition, since the magnetron magnet device can change the direction outside the target 63, the number of magnet traveling tracks that can be arranged at the position directly behind the target 63 can be increased.

  In the above embodiment, the first and second magnet traveling tracks 71, 73, 75, 72, 74, 76 are annular, and the first and second magnetron magnet devices 81, 82 are the first, second. The first to fourth linear magnet traveling longer than the long side of the rectangular target 64 as shown in FIG. 13, while moving around the magnet traveling tracks 71, 73, 75, 72, 74, 76. The tracks 77a to 77d are arranged so that both ends of each of the magnet traveling tracks 77a to 77d protrude from the short side of the target 64, and the central portion of each of the magnet traveling tracks 77a to 77d is positioned directly behind the target 64. One or a plurality of first to fourth magnetron magnet devices 83a to 83d having the same size are mounted on the first to fourth magnet traveling tracks 77a to 77d, respectively, and magnets on the adjacent magnet traveling tracks 77a to 77d are mounted. May be erosion region of the magnet arrangement 83a~83d do not overlap.

  In this case, the magnetron magnet device arranged on at least one of the first to fourth magnet travel tracks 77a to 77d is configured by the magnetron magnet device of FIG.

  In the second invention, among the magnet traveling tracks 71 to 76 and 77a to 77d, the magnetron magnet devices 81, 82, and 83a to 83d traveling on the same magnet traveling track have the same size and the center thereof. Move on the same trajectory, the erosion regions of different magnetron magnet devices 81, 82, 83a-83d on the same magnet traveling trajectory 71-76, 77a-77d overlap.

  Further, in the second invention, the present invention is not limited to the case where the magnetron magnet devices 81 and 82 having the same size and the same structure are attached to one magnet traveling track, and a third magnetron magnet device having a different size and structure can be attached. .

  In the magnetron magnet device used in the first and second inventions, one or more ring magnets having different sizes from the first and second ring magnets 46 and 47 are used as the first and second ring magnets. 46 and 47 may be arranged concentrically.

In the first and second inventions, the shape of the central magnet 45 is not particularly limited, and can be various shapes such as a circle, a ring shape, and a rectangle. The outer periphery of 45 is similar to the inner periphery of the ring of the first ring magnet 46, and the center of the center magnet 45 is positioned at the ring center of the first and second ring magnets 46 and 47.
Specifically, the first and second ring magnets 46 and 47 and the center magnet 45 are permanent magnets.

Internal explanatory view of the sputtering apparatus of the first invention (A) (b): Sectional drawing for demonstrating the magnetron magnet apparatus used for 1st, 2nd invention The top view for demonstrating an example of the movement path | route of the 1st, 2nd magnetron magnet apparatus in 1st invention The top view for demonstrating typically the erosion area | region by 1st invention The top view for demonstrating the comparative example of the movement path | route of the 1st, 2nd magnetron magnet apparatus in 1st invention The top view for demonstrating the other example of the movement path | route of the 1st, 2nd magnetron magnet apparatus in 1st invention. The top view for demonstrating the movement path | route when the 1st, 2nd magnetron magnet apparatus in 1st invention reciprocates Internal explanatory view of the sputtering apparatus of the second invention The top view for demonstrating an example of the 1st, 2nd magnet movement path | route in 2nd invention The top view for demonstrating the erosion area | region by 2nd invention typically The top view for demonstrating the example of the 1st, 2nd magnet movement path | route in 2nd invention The top view for demonstrating the other example of the 1st, 2nd magnet movement path | route in 2nd invention. The top view for demonstrating the movement path | route when the 1st, 2nd magnetron magnet apparatus in 2nd invention reciprocates

Explanation of symbols

10,50 ...... sputtering apparatus 29,85 ...... substrate moving track 20 _1, 81 ...... first magnetron magnet assembly 20 _2, 82 ...... second magnetron magnet assembly 21, 61 ...... first target 22, 62 …… Second target 23 …… Magnet travel track 45 …… Center magnet 46 …… First ring magnet 47 …… Second ring magnet 71, 73, 75 …… First magnet travel track 72, 74 , 76 …… Second magnet travel path

Claims (8)

A plate-shaped first target;
A first magnetron magnet device;
A second magnetron magnet device having a smaller diameter than the first magnetron magnet device;
A sputtering apparatus having a magnet moving device for repeatedly passing the back surface position of the first target through the first and second magnetron magnet devices,
Of the first and second magnetron magnet devices, at least one of the magnetron magnet devices has a center magnet and ring-shaped first and second ring magnets,
The first and second ring magnets are parallel to the surface of the first target,
The central magnet is disposed inside the ring of the first ring magnet, the first ring magnet is disposed inside the ring of the second ring magnet,
The center magnet and the first and second ring magnets have one magnetic pole on the surface on the first target side and the other on the surface on the opposite side of the first target. Magnetic poles are formed respectively.
The central magnet and the first ring magnet have opposite polarities of the magnetic poles on the first target side surface,
The first and second ring magnets are sputtering apparatuses in which the polarities of the magnetic poles on the first target side are opposite to each other.   A plurality of the first and second magnetron magnet devices are provided, and each of the first and second magnetron magnet devices is configured to move around and repeatedly pass through the back surface of the first target. The sputtering apparatus according to 1. Has a second target,
3. The sputtering apparatus according to claim 2, wherein the first and second magnetron magnet devices are configured to pass through the back surfaces of both the first and second targets by one round movement.   The sputtering apparatus according to claim 1, wherein the first and second magnetron magnet devices are configured to reciprocate. One or a plurality of first magnetron magnet devices are arranged, and a first magnet traveling track along which the first magnetron magnet device moves;
A second magnetron magnet device is arranged separately from the first magnetron magnet device, and a second magnet traveling track along which the second magnetron magnet device moves,
A sputtering apparatus having a first target in which a part of the first and second magnet traveling tracks is located on the back surface,
Of the first and second magnetron magnet devices, at least one of the magnetron magnet devices has a center magnet and ring-shaped first and second ring magnets,
The first and second ring magnets are parallel to the surface of the first target,
The central magnet is disposed inside the ring of the first ring magnet, the first ring magnet is disposed inside the ring of the second ring magnet,
The center magnet and the first and second ring magnets have one magnetic pole on the surface on the first target side and the other on the surface on the opposite side of the first target. Magnetic poles are formed respectively.
The central magnet and the first ring magnet have opposite polarities of the magnetic poles on the first target side surface,
The first and second ring magnets are sputtering apparatuses in which the polarities of the magnetic poles on the first target side are opposite to each other.   The first and second magnet traveling tracks are each formed in an annular shape, and the first and second magnetron magnet devices are configured to move around the first and second magnet traveling tracks, respectively. The sputtering apparatus according to claim 5.   The sputtering apparatus according to claim 5, wherein the first magnet traveling track is located inside the second magnet traveling track.   The sputtering apparatus according to any one of claims 5 to 7, wherein the first and second magnet traveling tracks have a second target located on a back surface.

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