JP2014047369A - Sputtering device, and magnet assembly - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering device for performing a sputtering deposition treatment by controlling an incident angle of sputtering particles with respect to a substrate to improve the film thickness distribution in the substrate face.SOLUTION: A magnet assembly of a target back surface comprising a plurality of magnet units arranged in a longer side direction. In the region, in which a magnetic tunnel is formed on the target, the distribution of an erosion progression rate is improved, so that the film thickness distribution in the substrate face is also improved.

Description

  The present invention relates to a sputtering film forming apparatus. In particular, the present invention relates to a sputtering film forming apparatus in which particles scattered from a sputtering target are incident on a substrate at a specific angle.

  In order to perform film formation while sputtered particles are incident on the substrate at a predetermined angle, an apparatus that controls the rotation of the substrate, the sputtering target, and the shielding member during film formation on the substrate is known (for example, a patent). Reference 1). In such an incident angle control sputtering (hereinafter also referred to as CIS: Control Incident sputtering) apparatus, sputtering (hereinafter also simply referred to as sputtering) film forming processing is performed using a rectangular target corresponding to the diameter of the substrate.

WO2010-073307

  A rectangular magnet unit 1 as shown in FIG. 14A is disposed on the back surface of the rectangular target described above to form a magnetic loop by forming a predetermined leakage magnetic field on the surface of the target on the substrate side. Is done. In FIG. 14A, 11 indicates an inner magnet, and 12 indicates an outer magnet. The inner magnet 11 and the outer magnet 12 are arranged so that the surfaces facing the target have opposite polarities. A magnetic loop is formed by the lines of magnetic force emitted from the magnetic pole of one of the magnets entering the magnetic pole of the other magnet. FIG. 14B illustrates the drift of electrons in the magnetic loop when, for example, the target side surface of the inner magnet 11 is an S pole and the target side surface of the outer magnet 12 is an N pole. Electrons in the magnetic loop on the target surface are subjected to Lorentz force by the magnetic field formed by the inner magnet 11 and the outer magnet 12 and the electric field induced on the target surface, and move like a trajectory D. Then, the target is mainly sputtered at a portion along the trajectory D to form a film on the substrate.

However, since the direction of the magnetic loop must be reversed by 90 degrees at the corner portion of the track D, the magnetic circuit becomes complicated and the magnetic field strength becomes weak. Therefore, the magnetic field strength is weaker in the corner portion than in the straight portion, and the movement speed of the electrons is increased. As a result, there is a location F where an electron pool due to an electron velocity difference is placed near the exit of the corner portion, and sputtering of the target is more likely to proceed than other portions. This phenomenon is called the corner effect.
This phenomenon becomes remarkable particularly in a magnet unit having a long side and a short side. When the electron travels in the short side direction, the linear distance is shortened. As a result, when the electron traveling direction is changed from the long side direction to the short side direction, the accumulation of electrons hardly occurs and the electron traveling direction is short side. When changing from the direction to the long side direction, a large accumulation of electrons occurs.

  Here, when the incident angle of the sputtered particles to the substrate is more strictly controlled, it is conceivable to perform the film forming process using only one of the two long sides of the trajectory D. However, as shown in FIG. 14 (a), in the track D, there is a portion F where the sputtering of the target is more likely to proceed than other portions due to the corner effect. Therefore, when the film forming process is performed using only one side of the track D, the amount of film formation is increased at locations close to the location F on the substrate, but the amount of film formation is decreased at locations far from the location F. Distribution of the film formation amount occurs in the plane.

  For this problem, it is conceivable to perform the film forming process while avoiding the portion F, but in that case, it is necessary to make the target and the magnet unit larger than the substrate with an increase in the diameter of the substrate. This increases the size of the device and increases the cost.

  The present invention has been made to solve such a problem, and makes the distribution of the film formation amount in the substrate surface good even in the CIS of the large-diameter substrate without increasing the size of the target and the magnet unit. It is an object to provide a sputtering apparatus, a sputtering method, and a magnet unit.

  In order to solve the above-described problems, the present invention provides a target holder for holding a sputtering target, a substrate holder for holding a substrate facing the surface of the target holder, and a back surface side of the target holder. A plurality of magnet units, and the magnet unit includes a central magnet provided at the center and an outer peripheral magnet provided on an outer periphery of the central magnet, and a magnetic tunnel is formed by the central magnet and the outer peripheral magnet. The outer peripheral magnet has a side extending in the first direction and a side extending in the second direction, and the plurality of magnet units are arranged adjacent to each other in the first direction, Sputtering onto the substrate using only a magnetic tunnel on one side from the central magnet in the first direction. Characterized in that it comprises a control for controlling apparatus to perform a grayed deposition process.

  Further, the present invention comprises a plurality of magnet units having a long side and a short side and arranged in parallel in the long side direction, and the magnet unit is provided at a center magnet provided at the center and an outer periphery of the center magnet. A magnetic tunnel is formed by the central magnet and the outer peripheral magnet, and an interval adjusting unit capable of changing an interval in the long side direction with another adjacent magnet unit is provided.

  According to the present invention, it is possible to perform a sputter film formation process in which the film formation distribution in the substrate surface is good by using a target and a magnet unit that are smaller than those of the conventional apparatus.

(A) It is a figure for demonstrating 1st Embodiment based on this invention. (B) It is a figure for demonstrating the relationship between the magnet and an electron orbit in 1st Embodiment. (C) It is a figure for demonstrating the utilization area | region of the target in this invention. (A) It is a figure for demonstrating a corner effect. (B) It is a figure for demonstrating the film thickness distribution in the board | substrate surface at the time of using the magnet unit which concerns on this invention. (A) It is a figure for demonstrating 2nd Embodiment based on this invention. (B) It is a figure for demonstrating the arrangement position of the magnet in 2nd Embodiment which concerns on this invention. (A) It is a figure for demonstrating 3rd Embodiment based on this invention. (B) It is a figure for demonstrating the trajectory of the electron in 3rd Embodiment based on this invention. (A) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (B) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (A) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (B) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (A) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (B) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (A) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (B) It is a figure for demonstrating the sputtering device which concerns on the 1st Embodiment of this invention. (A)-(d) It is a figure for demonstrating the sputtering device which concerns on the 5th Embodiment of this invention. It is a figure for demonstrating the sputtering device which concerns on the 5th Embodiment of this invention. It is a figure for demonstrating the sputtering device which concerns on the 6th Embodiment of this invention. It is a figure for demonstrating the control apparatus used for the sputtering device which concerns on this invention. (A) It is a figure for demonstrating the magnet unit in the conventional sputtering device. (B) It is a figure for demonstrating the track | orbit of the electron in the conventional magnet unit.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, components having the same function are denoted by the same reference numerals, and repeated description thereof is omitted.

(First embodiment)
FIG. 6A is a side view of a sputtering apparatus 600 according to an embodiment of the present invention. FIG. 6B is a perspective view of a sputtering apparatus 600 according to an embodiment of the present invention.

  6A and 6B, the sputtering apparatus 600 includes a substrate holder 601 on which a substrate 604 is placed, a cathode 602 that supports a target 603, and a shielding plate 606. The cathode 602 includes a target holder for holding the target 603 and a magnet assembly for forming a magnetic tunnel on the surface of the target 603. The target holding surface on the surface of the target holder and the substrate support surface of the substrate holder 601 are arranged so as to face each other. Each of the substrate holder 601 and the cathode 602 includes a rotation driving unit A and a rotation driving unit B, and each of the substrate holder 601 and the cathode 602 is an arbitrary angle around the rotation driving unit A and the rotation driving unit B. It can be rotated. For example, the substrate holder 601 and the cathode 602 can be rotated using rotating means such as a motor, and the rotating means can be controlled by a control device.

  The rotation driving unit A and the rotation driving unit B are arranged in parallel to each other, and the cathode 602 can support the target 603 so as to be parallel to the rotation driving unit B. The target 603 supported by the cathode 602 that can be rotated at an arbitrary angle around the rotation drive unit B is sputtered by causing ions in the plasma to collide with the surface of the target 603 in both cases of stationary and rotating. Particles 605 can be deposited on the substrate 604.

  At the time of the film forming process, the substrate 604 on which the film forming process is performed by the target 603 is placed on the substrate holder 601 that can be rotated at an arbitrary angle around the rotation driving unit A. The substrate support surface of the substrate holder 601 and the target holder of the cathode 602 are configured to be independently rotatable around the rotation drive unit A and the rotation drive unit B, respectively.

Further, a shielding plate 606 is provided between the target 603 and the substrate holder 601. The shielding plate 606 can limit a region where the target 603 and the substrate 604 face each other, and can include means for rotating at any angle around either the rotation drive unit A or the rotation drive unit B. The shielding plate 606 functions to finely adjust the film thickness distribution of the deposited film and to increase the selectivity of the incident angle of the sputtered particles. The shielding plate 606 can be rotated about the rotation driving unit A or the rotation driving unit B by any method, but in the embodiment described below, the shielding plate 606 is configured to be rotatable about the rotation driving unit A. Yes. The shielding plate 606 can be controlled by a control device so as to rotate independently of the cathode 603 or the substrate holder 601.
In the present embodiment, the rotation driving unit A and the shielding plate 606 are controlled in order to control the incident angle of the sputtered particles with respect to the substrate 604. In order to control the incident angle of the sputtered particles with respect to the substrate 604 while maintaining the relative angle between the substrate 604 and the target 603, it is necessary to control at least one of the rotation driving unit A or the rotation driving unit B and the shielding plate 606. It ’s enough.

  FIG. 7A is a side view of the substrate holder 701 of the sputtering apparatus of FIG. The substrate holder 701 has a substrate mounting table 702, and the substrate 703 is mounted on the substrate mounting table 702. FIG. 7B is a perspective view of the substrate holder 701 according to the embodiment of the present invention. Similar to FIG. 6, the substrate holder 701 is configured to be rotatable about the rotation drive unit A. The substrate mounting table 702 of the substrate holder 701 is configured to be rotatable about a rotation driving unit C that is perpendicular to the rotation driving unit A and passes through the center of the substrate 703, and the substrate 703 is centered on the rotation driving unit C. Can be rotated. The substrate mounting table 702 can be rotated using, for example, a rotating means such as a motor, and the rotating means can be controlled by a control device.

  FIG. 8 is a diagram illustrating an example of a sputtering apparatus according to another embodiment of the present invention. The sputtering apparatus 800 includes a substrate holder 801 on which a substrate is placed, a cathode 802 that supports a target 803, and a shielding plate 805. Each of the substrate holder 801 and the cathode 802 includes a rotation driving unit A and a rotation driving unit B, and at least one of the substrate holder 801 and the cathode 802 is an arbitrary centering on the rotation driving unit A and the rotation driving unit B. It is configured to rotate at an angle. For example, at least one of the substrate holder 801 and the cathode 802 can be rotated using rotating means such as a motor, and the rotating means can be controlled by a control device. The rotation drive unit A and the rotation drive unit B are arranged in parallel to each other, and the target 803 is supported by the cathode 802 so as to be parallel to the rotation drive unit B.

  The target 803 supported by the cathode 802 that can rotate at an arbitrary angle around the rotation drive unit B is sputtered by causing ions in the plasma to collide with the surface of the target 803 in both cases of stationary and rotating. Particles can be deposited on the substrate.

  The substrate on which the film forming process is performed by the targets 803a to 803c is placed on a substrate holder 801 that can rotate at an arbitrary angle around the rotation drive unit A. The substrate holder 801 is configured to be rotatable around a rotation drive unit (not shown) that is perpendicular to the rotation drive unit A and passes through the center of the substrate, and rotates the substrate around the rotation drive unit. Is possible. The substrate holder 801 can be rotated using rotating means such as a motor, for example, and the rotating means can be controlled by a control device.

Further, a shielding plate 805 is provided between the target and the substrate holder 801. The shielding plate 805 has means for rotating at an arbitrary angle around the rotation drive unit A, and is deposited. It functions to finely adjust the film thickness distribution of the film and increase the selectivity of the incident angle of the sputtered particles. The shielding plate 805 can rotate around the rotation driving unit A independently of the cathode 802 or the substrate holder 801 by the control unit of the shielding plate rotation driving unit 806. Note that the rotation centers of the rotation drive unit 806 and the rotation drive unit A do not need to be the same, and each rotation center is appropriately selected according to a desired incident angle of the sputtered particles with respect to the substrate.

  Usually, a film with improved orientation is composed of a plurality of layers, and typical examples thereof are Ta / FeCo, NiFe / FeCo, and NiFeCr / FeCo. In order to manufacture such a multi-layered film, it is desirable that there are a plurality of targets 803 supported by the cathode 802. In the form of FIG. 7, there are a plurality of targets 803a, 803b, and 803c, and the targets 803a, 803b, and 803c can be properly used according to the intended use. The rotation drive unit A and the rotation drive unit B are arranged in parallel to each other, and the targets 803a, 803b, and 803c are supported by the cathode 802 so as to be parallel to the rotation drive unit B. The targets 803a, 803b, and 803c that can rotate around the rotation drive unit B cause the ions in the plasma to collide with the surface of the target 803 to deposit sputtered particles on the substrate.

Next, a magnet assembly arranged on the back side of the target 803, which is a feature of the present invention, will be described. A magnet assembly 1 including two magnet units 101 and 102 as shown in FIG. 1A is provided behind the target 803 in FIG. Two magnet units 101 and 102 are installed on the base plate 100 adjacent to each other in the long side direction of the magnet assembly 1. These two magnets form a predetermined leakage magnetic field on the surface of the target on the substrate side to form a magnetic loop. For example, when the center magnet 111 of the magnet 101 is an S pole, the outer magnet is an N pole. The magnet 102 is designed to have a magnetic pole opposite to that of the magnet 101, the central magnet 121 is an N pole, and the outer magnet is an S pole. At this time, the magnetic lines of force are formed from the north pole to the south pole, so that the magnetic lines are generated from the outside to the inside in the magnet 101 and from the inside to the outside in the magnet 102.
The long side and the short side of the magnet assembly 1 are parallel to the target holding surface of the target holder and indicate the long side and the short side in the region where the magnet units 101 and 102 are disposed.

  When a high potential is applied to the target 803 in a state where the magnetic lines of force are generated, an electric field perpendicular to the target surface is generated. Due to the combination of the electric field perpendicular to the target surface and the magnetic field, electrons receive a Lorentz force and perform a drift motion. Sputtering occurs on the target surface along the electron trajectory to form a film.

  FIG. 1B shows the locus of electron drift motion on the surface of the target 203 formed on the basis of the lines of magnetic force formed by the magnets 101 and 102. The trajectory of the electron drift motion formed by the magnet 101 is 201, and the trajectory of the electron drift motion formed by the magnet 102 is 202. Since the electron trajectories 201 and 202 have opposite magnetic poles, the directions of movement are opposite to each other.

  At this time, in the trajectories 201 and 202, there is a portion F where sputtering of the target is more likely to proceed than other portions due to the corner effect. On the substrate, the portion opposite to the portion where the corner effect occurs tends to increase the film thickness, which is a factor for increasing the film thickness distribution in the substrate surface.

  In the present invention, in order to strictly control the incident angle of the sputtered particles to the substrate, a part of the target erosion is used using the shielding plate 805 of FIG. The erosion area to be used is indicated by reference numeral 205 in FIG. In this film forming method, the film thickness distribution on the substrate in the direction parallel to the target long axis direction largely depends on the distribution of the erosion speed in the target long axis direction. The film thickness distribution formed by this magnet is shown in FIG. become that way. In the magnet of FIG. 10 (a), the ratio of the major axis to the minor axis of the magnet is large, so that the difference in magnetic field strength (difference in electron scanning speed) becomes large and the corner effect appears strongly. Since the magnet is divided into two parts, the ratio of the major axis to the minor axis of the magnet is reduced, and the influence of the corner effect is suppressed.

FIG. 9 is a view for explaining and capturing the magnet assembly according to the present embodiment. FIG. 9A is a cross-sectional view along the line aa ′ in FIG. The central magnet 122 and the outer peripheral magnet 121 are arranged so that the magnetic poles on the side facing the target are different from each other. As a result, part of the lines of magnetic force emitted from the central magnet 122 leaks onto the target 203 and enters the magnetic poles of the outer peripheral magnet 121, thereby forming a magnetic tunnel 904.
FIG. 9B shows a state where the magnet assembly 1 and the target 203 of FIG. 1B are viewed from the short side direction of the magnet assembly. An outer peripheral magnet 111 and an outer peripheral magnet 121 are arranged side by side in the long side direction of the magnet assembly 1.

(Second Embodiment)
The invention according to this embodiment will be described with reference to FIG. FIGS. 3A and 3B are diagrams in which the interval between two magnets is variable. For example, the magnets can be slid on the base plate 401 and can be fixed using a fixing mechanism 402 at an arbitrary position.
This embodiment is characterized in that, in addition to the first embodiment, an interval adjusting unit 403 that adjusts the interval between the magnet units is provided.

  By changing the distance between the two magnets by such a mechanism, the magnetic field intensity around the area where the two magnet units 101 and 102 are adjacent to each other can be adjusted, and the sputtering rate at the center of the sputtering target area in the target can be controlled. Therefore, by controlling the sputtering rate at the center according to various conditions such as the target material used, the distance between the target and the magnet, and the magnetic field strength, the film thickness distribution during film formation on the substrate can be controlled. Is possible.

(Third embodiment)
The invention according to this embodiment will be described with reference to FIGS. 4A and 4B are views showing a mechanism in which the height of each point (distance between the target and the magnet) is variable in the direction of the long side of the magnet. The variable mechanism 403 can be used to adjust the height of the magnet. The present embodiment is characterized in that a variable mechanism 403 is provided in addition to the first embodiment.

  FIG. 4A shows a magnet assembly having an adjustment unit 405 that can adjust the distance between the target and the magnet by changing the height of the magnet 101 or 102. As the magnet approaches the target, the leakage magnetic field on the target surface becomes stronger, and the sputtering rate at that position increases. Thereby, the film thickness can be easily controlled. Therefore, in the present embodiment, when the film thickness at the center is thin, the film thickness distribution can be adjusted by increasing the magnet height of the center value.

  FIG. 4B shows another example in which the height of the magnet can be changed. Magnets 101 a, 101 b, 101 c, 101 d, and 101 e are all divided so as to have the same magnetic circuit as magnet 101. Similarly, the magnets 102a, 102b, 102c, 102d, and 102e are also divided so as to have the same magnetic circuit as the magnet 102. By changing the height of the magnet at each point in the long side direction of the target, the magnetic field strength at that position can be controlled, so that the uniformity of the film thickness can be improved. Also in the present embodiment, when the film thickness distribution is symmetric, the height adjustment can be performed so as to be symmetric from the center, so that the film thickness distribution can be easily controlled.

  In any of the above-described embodiments, the film thickness distribution of the substrate after sputtering is substantially symmetrical from the center of the wafer by making the magnetic poles on the side facing the target different between two adjacent magnets. Is obtained. Thereby, when adjusting the film thickness distribution, the position adjustment of the two magnets and the like may be performed symmetrically around the midpoint of the two magnets. For this reason, it is possible to efficiently control the film thickness distribution resulting from the positional relationship between the two magnets.

(Fourth embodiment)
A multi-divided magnet may be used instead of the two-divided magnet shown in the first embodiment. By dividing into a large number, the ratio between the major axis and minor axis length of the magnet can be made smaller, the difference in magnetic field strength (difference in electron scanning speed) becomes smaller, and the influence of the corner effect becomes smaller. It is possible. Thereby, since the influence of the film thickness increase by the corner effect can be reduced, the distribution is further improved.

  FIG. 5A shows an example of a magnet in which the magnetic circuit is divided into four. At this time, the polarities of adjacent magnets are reversed. For example, the center magnets 512a and 512b and the outer magnets 521a and 521b of the magnets 501a, 502a, 501b, and 502b are N poles, and the center magnets 522a and 522b and the outer magnets 511a and 511b are S poles.

FIG. 5 (b) shows the trajectory of electron drift motion that can be generated on the target surface when the quadrant magnet of FIG. 5 (a) is used. It can be seen that the locus of electron drift motion of 531a, 532a, 531b, and 532b is drawn on the target 503. At this time, electrons rotate in the same direction in 531a and 531b, 532a and 532b, respectively.
Thereby, the position adjustment of the magnet unit 501a and the magnet unit 502a may be performed symmetrically with the intermediate position between the magnet unit 501a and the magnet unit 502a as the center.
The same applies to the magnet unit 501b and the magnet unit 502b. Then, the magnet unit 501a and the magnet unit 502a are integrated, the magnet unit 501b and the magnet unit 502b are considered as an integrated unit, and the position is centered on the intermediate position (that is, the intermediate position between the magnet unit 502a and the magnet unit 501b). Adjustment and the like may be performed symmetrically.
Therefore, it is possible to efficiently control the film thickness distribution due to the positional relationship of the magnets by making the magnetic poles on the side facing the target different between adjacent magnets of the plurality of magnet units.

(Fifth embodiment)
The invention according to the present embodiment will be described with reference to FIGS. In this embodiment, the magnet assembly shown in the first embodiment can be driven in the long side direction of the magnet unit.

In FIG. 10A, a point M indicates the center point of the center magnet in each magnet unit. A region R is a region on the target, and is a region facing the substrate and mainly contributing to film formation. In the present embodiment, the magnet unit 101 and the magnet unit 102 are integrally driven by driving the base plate provided with the magnet unit 101 and the magnet unit 102 in the long side direction of the magnet unit. The arrows in the figure indicate the trajectory where the point M of each magnet unit moves.
In this embodiment, the point M is driven not only in the long side direction of the magnet unit but also in the short side direction so that the erosion region on the target formed by the magnet unit 101 and the magnet unit 102 varies. .

FIGS. 10B to 10D show other states when the magnet unit 101 and the magnet unit 102 are driven. In any state, each magnet unit is driven so that the erosion area E on one side from the central magnet in the long side direction is located inside the area R in the tunnel area of each magnet unit.
By adopting such a configuration, the distribution of the erosion speed is improved in the region R on the target in the long side direction of the magnet unit.

  In the present embodiment, the erosion region E is driven inside the region R. However, even if the locus E is set so that the erosion region E is driven outside the region R by driving the magnet unit. Good. However, even in that case, it is important that the erosion region E is driven in the long side direction of the magnet inside the region R.

  FIG. 11 is a perspective view of the target 203, the magnet unit 101, the magnet unit 102, and the base plate 401. The arrow on the target 203 is obtained by projecting the locus of the center point M of the center magnet of each magnet unit onto the surface of the target 203.

(Sixth embodiment)
In this embodiment, as shown in FIG. 12, the magnet unit 101 and the magnet unit 102 in the first embodiment are arranged adjacent to each other in the long side direction of each magnet unit, and are shifted in the short side direction. . However, the film is formed on the substrate using only the erosion region E1 on one side from the central magnet in the long side direction. Sputtered particles scattered in the substrate direction from the erosion region E2 on the other side from the central magnet in the long side direction are limited by a shielding plate provided between the target and the substrate.

  In any of the above-described embodiments, it has been described that the film formation on the substrate is performed using only the erosion region on one side from the central magnet in the long side direction among the erosion regions by the magnetic tunnel formed by the magnet unit. . Use of only one erosion region means that only one erosion region contributes mainly to film formation on the substrate. Therefore, the sputtered particles scattered from the erosion region on the other side may enter the substrate within a range that does not affect the film characteristics.

A control device used in the above-described embodiment will be described with reference to FIG.
FIG. 13 shows the relationship between the control device 90 and each element of the device controlled by the control device 90.
The storage device 63 provided in the control device 90 stores a control program for executing various substrate processing processes according to the present invention.
The control device 90 includes, for example, a general computer and various drivers, and can execute processing operations such as various calculations, control, and determination. A ROM or HDD (not shown) that stores various control programs executed by the CPU is included. The control program can be implemented as a mask ROM. Alternatively, the control program can be installed in a storage device 63 configured by a hard disk drive (HDD) or the like via an external recording medium or a network. The control device 90 is electrically connected to each of the rotation drive units A to C as necessary, and is configured to manage and control the operation of each rotation drive unit. In addition, it is connected to other components of the apparatus according to the present invention, such as a power source (not shown) connected to the cathode 602, a pressure gauge, and an exhaust means, as necessary.

DESCRIPTION OF SYMBOLS 1 Magnet assembly 11 Inner magnet 12 Outer magnet 100 Base plate 101 Magnet unit 101a-e Split magnet 102 Magnet unit 102a-e Split magnet 111 Outer magnet 112 Inner magnet 121 Outer magnet 122 Inner magnet 201 Electron track 202 Electron track 203 Target 401 Base plate 402 Fixing mechanism 403 Variable mechanism 501a, b Magnet unit 502a, b Magnet unit 503 Target 511a, b Outer magnet 512a, b Inner magnet 521a, b Outer magnet 522a, b Inner magnet 531a, b Electron tracks 532a, b Electron locus 600 Sputtering apparatus 601 Substrate holder 602 Cathode 603 Target 604 Substrate 605 Sputtered particle 606 Shielding plate 701 Substrate holder 702 Substrate Table 703 substrate 800 sputtering device 801 substrate holder 802 cathode 803a~c target 805 shielding plate 806 shielding plate rotating means 904 field lines

Claims (13)

A target holder for holding a sputtering target;
A substrate holder for holding the substrate facing the surface of the target holder;
A plurality of magnet units provided on the back side of the target holder,
The magnet unit has a central magnet provided at the center and an outer peripheral magnet provided on the outer periphery of the central magnet, and a magnetic tunnel is formed by the central magnet and the outer peripheral magnet,
The outer peripheral magnet has a side extending in the first direction and a side extending in the second direction;
A plurality of the magnet units are arranged adjacent to each other in the first direction;
A control device is provided for controlling the sputtering film forming process on the substrate using only a magnetic tunnel on one side from the central magnet in the first direction of the plurality of magnet units. Sputtering equipment. A shielding plate that is located between the target holder and the substrate holder and that can limit a region where the sputtering target and the substrate face each other;
The control device shields the magnetic tunnel on one side from the central magnet with respect to the substrate by the shielding plate, and uses only the magnetic tunnel on the other side from the central magnet to the substrate. The sputtering apparatus according to claim 1, wherein the shielding plate is controlled so as to perform a sputtering film forming process. A rotation drive unit for rotating the target holder and the plurality of magnet units, or for rotating the substrate holder;
The sputtering apparatus according to claim 1, wherein the control device controls the rotation driving unit and the shielding plate so that sputtering particles are incident on the substrate at a predetermined angle.   4. The sputtering apparatus according to claim 1, further comprising an interval adjusting unit capable of changing an interval between the adjacent magnet units in the first direction. 5.   5. The plurality of magnet units each include a height adjustment unit capable of changing a distance of each point in the first direction between the magnet unit and the surface of the target holder. Sputtering equipment.   The moving part which can drive the said several magnet unit to the said 1st direction is provided, maintaining the mutual space | interval in the said 1st direction of several said magnet units, The Claim 1 thru | or 5 characterized by the above-mentioned. Sputtering equipment. A target holder for holding a sputtering target;
A substrate holder for holding the substrate facing the surface of the target holder;
A magnet assembly provided on the back side of the target holder;
A rotational drive unit for rotationally driving the target holder and the magnet assembly, or for rotationally driving the substrate holder;
A shielding plate that is located between the target holder and the substrate holder and can limit a region where the sputtering target and the substrate face each other;
A control device for controlling the first rotation drive unit, the second rotation drive unit, and the shielding plate;
In the sputtering apparatus configured to allow sputtering film formation on the substrate while maintaining a predetermined relative angle between the sputtering target and the substrate by the first rotation driving unit and the second rotation driving unit,
The magnet assembly has a long side and a short side;
The magnet assembly comprises a plurality of magnet units arranged in parallel in the long side direction,
The magnet unit has a central magnet provided at the center and an outer peripheral magnet provided on the outer periphery of the central magnet, and a magnetic tunnel is formed by the central magnet and the outer peripheral magnet,
The control device is a part of a region of the surface of the target holder, includes only one side of the long side direction of the region where the plurality of magnetic tunnels are formed, and extends in the long side direction The sputtering apparatus, wherein the rotation driving unit and the shielding plate are controlled so that the region faces the substrate holder at a predetermined angle.   The said magnet unit is provided with the space | interval adjustment part which can change the space | interval of the said long side direction with other adjacent magnet units, The sputtering device of Claim 7 characterized by the above-mentioned.   9. The sputtering according to claim 7, wherein the plurality of magnet units include a height adjusting unit capable of changing a distance of each point in the long side direction between the magnet unit and the surface of the target holder. apparatus.   The said magnet assembly is provided with the moving part which can be driven to the said long side direction, maintaining the mutual distance in the said long side direction of the said several magnet unit. The sputtering apparatus according to item. Has a long side and a short side,
A plurality of magnet units arranged in parallel in the long side direction,
The magnet unit has a central magnet provided at the center and an outer peripheral magnet provided on the outer periphery of the central magnet, and a magnetic tunnel is formed by the central magnet and the outer peripheral magnet,
A magnet assembly, comprising: an interval adjusting unit capable of changing an interval in the long side direction with another adjacent magnet unit. The plurality of magnet units are disposed on a base plate,
The magnet assembly according to claim 11, further comprising a height adjusting unit capable of changing a height of each point in the long side direction of the magnet unit and the base plate.   The magnet assembly according to claim 11 or 12, further comprising a moving unit that can be driven in the long side direction while maintaining a mutual distance in the long side direction of the plurality of magnet units.