JP6396367B2 - Multi-directional racetrack rotating cathode for PVD arrays - Google Patents

Description

  Embodiments of the invention relate to a cathode assembly for a deposition apparatus and a method for depositing a film on a substrate. Embodiments of the present invention relate specifically to a cathode assembly for a sputter deposition apparatus and a method for depositing a film on a substrate in the sputter deposition apparatus. In particular, embodiments relate to a cathode assembly having a magnet assembly and a method of depositing a film using a magnetic field.

  In some applications and in some technical fields, coated materials may be used. For example, substrates for displays are often coated by a physical vapor deposition (PVD) process. Additional uses for coated materials include insulation panels, organic light emitting diode (OLED) panels, as well as hard disks, CDs, DVDs, and the like.

  Several methods are known for coating a substrate. For example, the substrate can be coated by a PVD process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, or the like. Typically, this process is performed in a process apparatus or process chamber in which the substrate to be coated is placed. In this apparatus, the deposition material is supplied. When a PVD process is used, the deposited material is in a solid phase within the target. By bombarding the target with energetic particles, the target material, ie the atoms of the material to be deposited, is released from the target. The atoms of the target material are deposited on the substrate to be coated. PVD processes are usually suitable for thin film coatings.

In the PVD process, the target is used to act as a cathode. Both are placed in a vacuum deposition chamber. The process chamber is filled with process gas at a low pressure (eg, about 10 ⁻² mbar). When a voltage is applied to the target and the substrate, electrons are accelerated towards the anode, whereby process gas ions are generated by collisions of electrons with gas atoms. Positively charged ions are accelerated in the direction of the cathode. Ion bombardment releases atoms of the target material from the target.

  In order to increase the efficiency of the aforementioned process, cathodes using magnetic fields are known. By applying a magnetic field, electrons spend more time near the target and more ions are generated near the target. In known cathode assemblies, one or more magnet yokes or rods of magnets are arranged to improve ion generation and thus the deposition process. Some cathode arrangements provide a movable magnet assembly within the cathode to reach a highly efficient and uniform layer deposition.

  However, the movement of a magnet rod (such as rotation) is time consuming and requires considerable hardware and software effort to drive the magnet assembly, so a movable magnet rod or magnet yoke is expensive. And is prone to error.

  In view of the above, it is an object of the present invention to provide a cathode assembly that overcomes at least some of the problems in the art and a method of depositing a film on a substrate.

In light of the above, a cathode assembly for a sputter deposition apparatus according to independent claim 1 and a method for depositing a film on a substrate in a sputter deposition apparatus according to independent claim 12 are provided. Further aspects, advantages and features of the invention will be apparent from the dependent claims, the description and the attached drawings.

  According to a first embodiment of the invention, a cathode assembly for a sputter deposition apparatus having a coating side for coating on a substrate is provided. The cathode assembly includes a rotating target assembly adapted to rotate the target material about an axis of rotation and at least one first magnet assembly. The at least one magnet assembly typically has an inner pole and at least one outer pole and is adapted to generate one or more plasma regions. Furthermore, the cathode assembly has a first angular coordinate for the magnetic pole and a second angular coordinate for the additional magnetic pole. Typically, these poles are provided against the coating side. The first angular coordinate and the second angular coordinate define an angle α that is greater than about 20 degrees and less than about 160 degrees.

  According to a further embodiment of the invention, a method is provided for depositing a film on a substrate in a sputter deposition apparatus. The sputter deposition apparatus can include a rotating target assembly and a coating side for coating on the substrate. Typically, the target assembly is adapted to rotate the target material about an axis of rotation. Further, the cathode assembly can include at least one magnet assembly held in a fixed position with respect to the rotational axis. The magnet assembly includes an inner magnetic pole and at least one outer magnetic pole and is adapted to generate one or more plasma regions. Typically, the cathode assembly further has a first angular coordinate for a magnetic pole provided for the coating side and a second angular coordinate for a further magnetic pole provided for the coating side. A method of depositing a film on a substrate generates at least one first plasma region with a magnetic field generated by a magnetic pole disposed at a first angular coordinate to coat the substrate on a coating side, Generating at least one second plasma region with a magnetic field generated by magnetic poles arranged at angular coordinates. Typically, the first angular coordinate and the second angular coordinate define an angle α that is greater than about 20 degrees and less than about 160 degrees.

  According to a further embodiment, a cathode assembly for a sputter deposition apparatus is provided. Typically, the cathode assembly has a coating side for coating on the substrate. In addition, the cathode assembly includes a rotating target assembly adapted to rotate the target material about an axis of rotation, and at least one first magnet assembly. The magnet assembly includes an inner magnetic pole and at least one outer magnetic pole and is adapted to generate one or more plasma regions. Typically, the inner and outer poles of at least one pole define an angle α that is greater than about 20 degrees and less than about 160 degrees. According to further embodiments, features from the dependent claims or combinations of dependent claims can optionally be added.

  According to a further embodiment, a cathode assembly for a sputter deposition apparatus is provided. The cathode assembly has a coating side for coating on the substrate and a rotating target assembly adapted to rotate the target material about an axis of rotation. Further, the cathode assembly has an inner magnetic pole and at least one outer magnetic pole, and has at least one first magnet assembly adapted to generate one or more plasma regions, a second inner magnetic pole and at least And at least one second magnet assembly having a second outer pole and adapted to generate one or more plasma regions. Typically, the inner and second inner poles define an angle α that is greater than about 20 degrees and less than about 160 degrees. According to further embodiments, features from the dependent claims or combinations of dependent claims can optionally be added.

  Embodiments are also directed to apparatus for performing the disclosed methods and include apparatus components that perform each of the described method steps. These method steps may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. Furthermore, embodiments according to the invention are also directed to a method by which the described apparatus operates. The present invention includes method steps that implement all the functions of the apparatus.

  In order that the above features of the present invention may be understood in detail, a more detailed description of the invention, briefly summarized above, may be obtained by reference to the embodiments. The accompanying drawings relate to embodiments of the invention and are described below.

1 is a schematic diagram of a deposition chamber suitable for a PVD process according to embodiments described herein. FIG. 1 is a schematic cross-sectional view of a cathode assembly according to embodiments described herein. FIG. 1 is a schematic cross-sectional view of a cathode assembly according to embodiments described herein. FIG. 2 is a schematic cross-sectional view of a cathode including a cathode assembly according to embodiments described herein. FIG. 1 is a schematic cross-sectional view of a magnet assembly according to embodiments described herein. FIG. FIG. 5b is a schematic top view of the magnet assembly shown in FIG. 5a according to embodiments described herein. 1 is a schematic cross-sectional view of a magnet assembly according to embodiments described herein. FIG. FIG. 6b is a schematic top view of the magnet assembly shown in FIG. 6a according to embodiments described herein. 2 is a flow diagram of a method for depositing a film according to embodiments described herein.

  Reference will now be made in detail to various embodiments of the invention. One or more examples of these embodiments are shown in the figures. In the following description of the drawings, the same reference numbers refer to the same components. Overall, only the differences with respect to the individual embodiments are described. Each example is provided by way of explanation of the invention, and is not meant as a limitation of the invention. Furthermore, features illustrated or described as part of one embodiment can be used in other embodiments or in conjunction with other embodiments to yield further embodiments. This description is intended to include such modifications and variations.

  FIG. 1 illustrates a deposition chamber suitable for a PVD process according to embodiments described herein. Typically, the chamber 100 includes a substrate support 105 adapted to support a substrate 110. In addition, the chamber 100 includes a device 120 for receiving and holding the cathode assembly 130. The cathode assembly 130 can include a target that supplies a material to be deposited on the substrate 110. According to some embodiments, cathode assembly 130 as well as device 120 for receiving and holding are adapted to rotate cathode assembly 130.

  As used herein, the term “cathode assembly” is adapted to be used as a cathode in a deposition process, such as a sputter deposition process, and is to be understood as an assembly suitable for such use. For example, the cathode assembly can include a body as a basis. Typically, the body of the cathode assembly can be adapted to be cooled, for example, by flowing a coolant through the body. The cathode assembly can further include a target material, which can be attached to the body in a solid form. Typically, the target material can contain material to be deposited during the deposition process. The cathode assembly can be adapted to be mounted within the deposition chamber and can include respective connections. For example, the cathode assembly can be rotatable about the axis of rotation of the cathode assembly and can be adapted to be rotatably mounted within the deposition chamber. In addition, the cathode assembly can include one or more magnet assemblies to generate a magnetic field.

  As used herein, the term “magnet assembly” should be understood as an assembly that includes one or more magnetic poles for generating one or more magnetic fields. For example, the magnet assembly can include two magnetic poles having opposite polarities, such as two magnet elements arranged to generate two magnetic fields. Typically, the arrangement of the magnetic poles in the magnet assembly can allow the magnetic field to be generated in a substantially tunnel shape. A magnet assembly that provides a magnetic field having the shape of a closed loop tunnel can be represented as a racetrack. Typically, the magnet assembly can be adapted to be disposed within the cathode assembly described above.

  Typically, cathode assemblies according to embodiments described herein include a magnet assembly. The magnet assembly can be disposed within the cathode assembly and can include two magnetic poles, such as a magnet rod, magnetic material, and the like. Because of the higher amount of process gas ions (above) near the target, higher deposition rates are possible with a cathode assembly that includes one or more magnet assemblies. Furthermore, the magnet assembly in the cathode of the PVD deposition process chamber allows a lower voltage difference between the cathode and anode to be used than a cathode assembly without a magnet assembly.

  Cathode assemblies known in the art include a magnet assembly that is rotatable about the axis of rotation of the cathode assembly. The rotation of the magnet assembly about the axis of rotation of the cathode assembly results in a more uniform deposition of material on the substrate compared to a non-rotating magnet assembly. The uniformity of material deposition is related to, for example, layer thickness and layer resistance. Rotation about the axis of rotation can be provided in shake mode or split sputter mode. Moving the magnet assembly within the target is used, for example, for large area PVD systems with static deposition.

  According to embodiments described herein, a cathode assembly is provided that includes one or more magnet assemblies held in a fixed position relative to the axis of rotation of the cathode assembly. Typically, the magnet assembly includes magnetic poles and / or magnets. Embodiments of the magnet assembly are described in detail with respect to FIGS. 5a, 5b, 6a, and 6b. Typically, at least one magnet assembly is provided within the cathode assembly. The magnet assembly typically includes at least three magnetic poles, such as an inner magnetic pole and at least one outer magnetic pole. According to some embodiments, the magnetic poles are arranged in a racetrack shape and are adapted to generate a magnetic field having a racetrack shape.

  Typically, the magnetic field is generated by one or more magnet assemblies. These magnetic fields cause a plasma region formed near the magnetic field. According to the exemplary embodiments described herein, the plasma region caused by the magnetic field is stored in multiple directions. Typically, multi-direction can be achieved by different arrangements or designs of one or more magnet assemblies and magnetic poles within the cathode assembly. For example, one and / or multiple magnet assemblies can be arranged in multiple directions on the coating side of the cathode assembly, typically on the single coating side of the cathode assembly. In general, the cathode assembly is adapted to provide a first angular coordinate for a magnetic pole and a second angular coordinate for a further magnetic pole. The first angular coordinate and the second angular coordinate of the cathode assembly are typically placed on the coating side for coating one substrate.

  According to some embodiments, the angle α between the first angular coordinate and the second angular coordinate is greater than about 20 degrees and less than about 160 degrees. The angle α between the first angular coordinate and the second angular coordinate is more typically about 30 to 120 degrees, and even more typically about 50 to about 100 degrees. According to one embodiment, the angle between the first angular coordinate and the second angular coordinate is greater than about 30 degrees and less than about 80 degrees. In one example, the angle between the first angular coordinate and the second angular coordinate is about 60 degrees.

  According to some embodiments, the inner pole of the first magnet assembly is positioned at a first angular coordinate of the cathode assembly, and one of the outer poles of the first magnet assembly is the second Placed at the corner coordinates. According to some further embodiments, the inner pole of the first magnet assembly is arranged at a first angular coordinate and the inner pole of the second magnet assembly is arranged at a second angular coordinate. . Typically, the angle between the first angular coordinate and the second angular coordinate is the angle α described above. Typically, the angle defined above essentially corresponds to the angle of the plasma region produced by the one / multiple magnet assembly. This may be especially true for symmetrical magnet assemblies in which the plasma region is formed essentially symmetrically with respect to the magnet assembly components. For example, the plasma region can be formed corresponding to the arrangement of the magnetic poles. Thus, according to some embodiments that can be combined with other embodiments described herein, defining the position and angle relative to the plasma region herein corresponds to the magnetic pole, magnet It can be applied to each component of one or more magnet assemblies, such as elements.

  Typically, the angle between the magnetic poles and / or between the first plasma region and the second plasma region is determined using one or more magnet assemblies positioned at fixed positions within the cathode assembly. Can be provided. Having a multi-directional race track in one rotating cathode according to the embodiments described herein saves both time and equipment costs.

  In general, the angle between the first angular coordinate and the second angular coordinate is measured in substantially one plane. According to some embodiments, the plane that includes the first angular coordinate and the second angular coordinate is a cross-section of the cathode assembly at a defined longitudinal position. Typically, the plane in which the first angular coordinate and the second angular coordinate are arranged can be substantially perpendicular to the longitudinal axis (such as the axis of rotation) of the cathode assembly. As seen in FIGS. 2-4, the angle α is measured within the cross section of the cathode assembly. As an example, the cross-section can be a plane located about 50% of the length along the longitudinal (or rotational) axis of the cathode assembly.

  FIG. 2 shows a cross-sectional view of a cathode assembly according to some embodiments described herein. Typically, the cathode assembly described herein with respect to FIGS. 2-4 can be used in the PVD chamber described with respect to FIG. Cathode assembly 200 provides a rotating target assembly that supplies target material 210. The target material can be placed in one piece, as shown in the embodiment of FIG. 2, or can be placed in several target tiles. The cathode assembly 200 includes a rotation shaft 220, and the cathode assembly is rotatable about the rotation shaft 220.

  In the embodiment shown in FIG. 2, one magnet assembly 230 is provided. Typically, the magnet assembly is provided within the cathode assembly. According to some embodiments, the magnet assembly 230 is adapted to be held in a fixed position relative to the cathode assembly. In other words, the magnet assembly 230 can rotate with the cathode assembly 200 relative to the substrate 280, but the magnet assembly is in a fixed position with respect to the rotational axis 220 of the cathode assembly 200. Typically, the side of the cathode on which the magnet assembly is disposed can be referred to as the coating side. In FIG. 2, the coating side can be seen from the substrate 280 disposed on the coating side of the cathode assembly 200.

  According to some embodiments, the magnet assembly 230 includes a base and two or more magnetic poles having opposite polarities. In the embodiment shown in FIG. 2, two permanent magnets 235 and 236 having opposite polarities are shown. Several magnet assemblies used in embodiments of the present invention are described in more detail with respect to FIGS. 5a, 5b, 6a, and 6b.

  Typically, the poles described with respect to FIGS. 2-4 are shown in cross-section. For example, in the cross-sectional view of FIG. 2, the magnet element 235 can be provided by two outer magnet elements, which are shown as two elements in the cross-sectional view of FIG. It can also have a loop shape so that only one element 235 can be present. The same applies to the magnet assemblies and magnet elements of FIGS.

  According to some embodiments, two magnetic poles, such as magnets 235 and 236, generate two magnetic fields when placed in the deposition chamber, thereby creating a plasma region near these magnetic fields during operation. cause. In FIG. 2, these plasma regions are denoted by reference numerals 240 and 250.

  In the following, the magnetic assembly is described as providing a plasma region, which can generate a magnetic field when operated in a deposition chamber, thereby creating a plasma region near the cathode assembly. It means to cause. For example, the magnetic assemblies described herein affect the generation and location of the plasma region during the deposition process described as providing the plasma region.

  Typically, the plasma regions described herein and shown in the figures are shown in cross section. The cathode assembly described and illustrated in FIGS. 2-4 is shown in cross-sectional view. Furthermore, it should be understood that the plasma region shown in this cross-sectional view can have a substantially circular or oval shape, but this is only a schematic view of the plasma region. The plasma region can have a cross-sectional shape having any shape that deviates from the shape shown schematically, which can be caused by the magnetic field of the magnetic assembly described herein. Typically, the two plasma regions shown in the figure, such as plasma regions 240 and 250 in FIG. 2, may have overlapping portions in a different cross-section from the plane shown in FIGS. May come together in another plane. For example, if the plasma region has a racetrack shape, the two plasma regions shown in the cross-sectional view can be a single plasma region that forms a closed loop shape. Nevertheless, the plasma regions described herein are referred to as two plasma regions because they are described in a cross-sectional view as shown.

  The term “substantially” in this context means that there may be certain deviations from the characteristics expressed with “substantially”. For example, the term “substantially circular” refers to a shape that can have a particular deviation from an exact circular shape, such as a deviation of about 1-10% of the overall length in one direction. According to a further example, the term “substantially symmetric” can refer to the symmetry of the center point of the shape of the element represented as “symmetric”. Typically, the term “substantially symmetric” may mean that the elements are not precisely arranged symmetrically and that they deviate from the symmetrical arrangement to some extent, for example a few percent of the total length of the element. is there.

  In the embodiment shown in FIG. 2, the first angular coordinate of the cathode assembly 200 relative to the magnetic pole is represented by reference numeral 260, and the second angular coordinate of the cathode assembly 200 relative to the additional magnetic pole is represented by reference numeral 270. Typically, the first angular coordinate 260 and the second angular coordinate 270 are from the axis of rotation 220 of the cathode assembly 200 to the inner pole 236 of the magnet assembly 230 and one outer pole 235 of the magnet assembly 230, respectively. Extend. The angle α between the first angular coordinate 260 and the second angular coordinate 270 can be about 20 degrees to about 160 degrees as described above.

  Typically, the magnet assembly is adapted to generate two magnetic fields simultaneously, thereby causing the formation of a plasma region near the cathode assembly. As such, the first and second plasma regions are formed simultaneously by the magnetic poles of the magnet assembly, allowing a large substrate area to be deposited simultaneously with a high degree of uniformity.

  FIG. 3 illustrates a cross-sectional view of a rotatable cathode assembly 300 according to embodiments described herein. The cathode assembly 300 has a rotating target assembly that provides a material 310 and a rotation axis 320, and the target assembly can rotate about the rotation axis 320. The cathode assembly 300 typically provides a first magnet assembly 330 and a second magnet assembly 335. Typically, magnet assemblies 330 and 335 are each disposed within cathode assembly 300. Further, the magnet assembly 330 typically includes an outer magnetic pole 331 and an inner magnetic pole 332, and the magnet assembly 335 typically includes an outer magnetic pole 336 and an inner magnetic pole 337. Examples for magnetic pole embodiments are described in detail with respect to FIGS. 5a, 5b, 6a, and 6b. The magnetic poles of these magnet assemblies can be arranged such that the magnet assembly generates one or more magnetic fields so that when the cathode assembly is operated in the deposition chamber, one or more near the cathode assembly Causes the formation of multiple plasma regions. For example, plasma regions 340, 341 are associated with the magnetic field generated by magnetic poles 331 and 332 of magnet assembly 330, and plasma regions 350, 351 are associated with the magnetic field generated by magnetic poles 336, 337 of magnet assembly 335. Typically, the inner pole 332 of the magnet assembly 330 is oriented at the first angular coordinate 360 of the cathode assembly 300 and the inner pole 337 of the magnet assembly 335 is oriented at the second angular coordinate 370 of the cathode assembly 300. The According to some embodiments, the first angular coordinate 360 and the second angular coordinate 370 are transmitted from the axis of rotation 320 of the cathode assembly 300 to the two or more magnets of the cathode assembly, as described in detail above. Extends to the inner pole of the assembly.

Typically, magnet assemblies 330 and 335 are placed in a fixed position with respect to cathode assembly 300. In particular, magnet assemblies 330 and 335 are held in a fixed position relative to each other. According to some embodiments, two magnet assemblies can be rigidly connected to each other, i.e., rigidly coupled to each other, such that the magnet assemblies are held in a fixed position relative to each other. Generally, the side of the cathode on which the magnet assemblies 330 and 335 are disposed is referred to as the coating side.

  Typically, an angle α is provided between a first angular coordinate for the magnetic pole and a second angular coordinate for the further magnetic pole. According to some embodiments, the angle α between the first angular coordinate and the second angular coordinate is typically about 20 degrees to about 160 degrees, and more typically about 30 degrees. ~ 120 degrees, and even more typically about 50 to about 100 degrees. According to one embodiment, the angle between the first angular coordinate and the second angular coordinate is greater than about 30 degrees and less than about 80 degrees. In one example, the angle between the first angular coordinate and the second angular coordinate is about 60 degrees.

  As shown in the embodiment of FIG. 3, each of the two or more magnet assemblies in the cathode assembly provides two plasma regions. However, FIG. 3 is a cross-sectional view of the cathode assembly, and thus the plasma region is also shown in cross-sectional view. As described above, the two plasma regions of a magnet assembly may overlap or be integrated in a plane different from that shown in FIG.

  According to some embodiments, a cathode assembly having two or more magnet assemblies (such as the cathode assembly shown in FIG. 3) is used in the deposition chamber to coat one substrate. That means that two or more magnet assemblies are used to coat the same substrate simultaneously. Typically, both two magnet assemblies are used in a fixed position to coat one substrate.

  In FIG. 4, a cross-sectional view of a cathode assembly 400 according to embodiments described herein is shown. Within cathode assembly 400, a rotating target assembly provides target material 410. Illustratively, four magnet assemblies 430, 431, 432, and 433 are disposed within the cathode assembly 400. Typically, the target assembly is rotatable about the rotation axis 420 and the magnet assembly is fixed relative to the rotation axis 420 within the cathode assembly 400. According to some embodiments, the magnet assemblies are in a fixed position relative to each other.

  Typically, magnet assemblies 430, 431, 432, and 433 include inner poles 471, 473, 475, and 477, and outer poles 470, 472, 474, and 476, respectively. These magnetic poles are typically adapted to provide one or more magnetic fields. The magnetic field generated by the magnetic poles 470, 471, 472, 473, 474, 475, 476, and 477 of the magnet assemblies 430, 431, 432, and 433 causes the formation of one or more plasma regions near the cathode assembly. be able to. For example, the magnetic poles 470, 471, 472, 473, 474, 475, 476, and 477 provide a magnetic field for forming the plasma regions 440, 441, 442, 443, 444, 445, 446, and 447. Typically, the inner magnetic pole 471 of the magnet assembly 430 is located at the first angular coordinate 460 of the cathode assembly 400 and the inner magnetic pole 473 of the magnet assembly 431 is located at the second angular coordinate 461 of the cathode assembly 400. , The inner magnetic pole 475 of the magnet assembly 432 is located at the third angular coordinate 462 of the cathode assembly 400, and the inner magnetic pole 477 of the magnet assembly 433 is located at the fourth angular coordinate of the cathode assembly 400.

  According to some embodiments, these magnet assemblies can be arranged symmetrically within the cathode assembly. As an example, the magnet assemblies 430, 431, 432, and 433 of the cathode assembly 400 are disposed substantially symmetrically within the cathode assembly 400. In one embodiment, the magnet assemblies can be arranged at substantially the same angular distance from one another. At this time, the angle α between the inner magnetic poles of each magnet assembly can be about 90 degrees as an example.

  According to a further embodiment, the magnet assembly can be arranged partially symmetrically. For example, an arrangement having two magnet assemblies in one half of the cathode assembly can be reflected in the other half of the cathode assembly. Such an example is shown in FIG. Magnet assemblies 430 and 431 are symmetric with respect to assemblies 432 and 433. Typically, the cathode assembly shown in FIG. 4 can be described as having two coating sides, where the magnet assemblies 430 and 431 are disposed on the first coating side and the magnet assemblies 432 and 433 are second. It is arranged on the coating side. These two coating sides are also indicated in FIG. 4 by substrates 480 and 481, each substrate being disposed on each of the two coating sides.

  According to some embodiments, each coating side of the cathode assembly can have one or more magnet assemblies. Typically, each coating side of the cathode assembly can provide a first angular coordinate for the magnetic pole and a second angular coordinate for the additional magnetic pole.

  Typically, the arrangement of the first magnet assembly and the second magnet assembly can be placed twice, eg symmetrically, within the cathode assembly. According to some embodiments, the angle between the first angular coordinate of the inner magnetic pole of the first magnet assembly and the second angular coordinate of the inner magnetic pole of the second magnet assembly is about 60 degrees. Can be provided. Using this arrangement, not only can one substrate placed on the front of the cathode assembly be coated at once, another substrate placed behind the cathode assembly can be coated symmetrically and simultaneously.

  The embodiment shown in FIG. 4 shows four magnet assemblies 430, 431, 432, and 433 as examples, each magnet assembly providing a magnetic field for two plasma regions. Typically, the angle α between the first angular coordinate 460 and the second angular coordinate 461 is about 20 degrees to about 160 degrees, more typically about 30 degrees to 120 degrees, and even more typical. The angle may be about 50 degrees to about 100 degrees. According to one embodiment, the angle between the first angular coordinate and the second angular coordinate is greater than about 30 degrees and less than about 80 degrees. In FIG. 4, only the angle between the first angular coordinate 460 and the second angular coordinate 461 is shown for easy understanding. However, the aforementioned value for angle α also applies to angles between angular coordinates 461 and angular coordinates 462, angular coordinates 462 and angular coordinates 463, and angular coordinates 463 and angular coordinates 460. Can be applied.

  FIG. 5a shows a cross-sectional view of an example of a magnet assembly that can be used in a cathode assembly according to embodiments described herein. Typically, magnet assembly 500 includes a yoke 510. According to some embodiments, the magnet assembly 500 includes an inner pole 530 and an outer pole 520 having a reverse polarity. In the embodiment shown in FIGS. 5 a and 5 b, the magnetic poles 520 and 530 are shown as magnet elements 520 and 530 disposed on the yoke 510. According to some embodiments, these magnet elements can be permanent magnets.

  According to some embodiments, the magnetic poles described herein can be any element suitable for generating a magnetic field to form a plasma region near the cathode assembly. In some embodiments, the magnetic poles described herein can be permanent magnets, and according to further embodiments, one of these magnetic poles can be a yoke, such as a yoke made from a material containing iron. Can be provided by magnetic material.

  Typically, as can be seen in FIG. 5a, the magnet elements 520 and 530 are arranged in such a way as to be able to generate two magnetic fields. Some of these two magnetic fields are indicated by magnetic field lines 560 and 540. In FIG. 5a, only the magnetic lines of force extending in one direction from the permanent magnet, ie away from the yoke 510, are shown.

  The magnetic field shown in FIG. 5a can cause the formation of two plasma regions when used in the cathode assembly as described above. The plasma region formed by the magnet assembly 500 of FIG. 5a is represented by reference numerals 550 and 551 in FIG. 5a. Typically, FIG. 5a shows a cross-sectional view of a magnet assembly. Thus, two plasma regions 550, 551 are also shown in the cross-sectional view. However, as also mentioned above, these plasma regions may have overlapping portions in a different cross-section from the plane shown, or may even be integrated in another plane. For example, if the plasma region has a racetrack shape, the two plasma regions shown in the cross-sectional view can be a single plasma region that forms a closed loop shape.

  FIG. 5b shows a top view of the magnet assembly 500 of FIG. 5a. Typically, two magnet elements 520 and 530 can be seen on the yoke 510. These magnet elements can be arranged such that at least one of the magnet elements forms a closed loop. In FIG. 5b it can be seen that the magnet element 520 forms a closed loop in which the magnet element 530 is placed.

  According to some embodiments, a magnet element disposed within a loop-shaped magnet element can be represented as an inner magnet, and the magnet elements forming the loop can be represented as an outer magnet. it can. Typically, the inner magnet can form a structure within the outer magnet element.

  Typically, the outer pole referred to herein can be shown as two outer poles in the cross-sectional plane shown in FIGS. 5a and 6a. However, as can be seen in the top view of the example of FIGS. 5b and 6b, the outer pole can be provided by one closed loop shaped magnet element that provides two outer poles in the cross-sectional view.

  FIG. 6a shows a cross-sectional view of an example of a magnet assembly that can be used in the cathode assembly described above with respect to FIGS. The magnet assembly 600 typically includes a yoke 610 on which magnetic poles such as magnetic elements 620 and 630 can be disposed. According to some embodiments, the magnet elements 620 and 630 can be permanent magnets. 6a shows two plasma regions 650, 651 that may be provided by the magnet assembly 600, i.e., the plasma regions 650, 651 are formed and positioned during operation of the magnet assembly within the cathode assembly as described above. Can do.

  Typically, the magnet assembly of FIG. 6a provides a magnetic field that allows a plasma region to be formed. In FIG. 6a, the magnetic field lines 640 and 660 are shown by way of example and present a portion of the generated magnetic field.

  FIG. 6b provides a top view of the magnet assembly 600 of FIG. 6a. An outer magnet element 620 is provided and surrounds the inner magnet element 630. In the embodiment shown in FIG. 6b, the inner and outer magnet elements are arranged in a loop shape. Both magnet element 620 and magnet element 630 are disposed on yoke 610. Typically, when the magnet assembly 600 is mounted within the cathode assembly, the inner magnet element 630 can be positioned at the first angular coordinate or the second angular coordinate of the cathode assembly. According to some embodiments in which a loop-shaped inner magnet is used, the magnet assembly can be positioned such that the angular coordinates of the cathode assembly are directed toward the centerline of the loop-shaped inner magnet element.

  Typically, the first pole of the magnet assembly described herein points in the direction outside the plane defined by the closed loop of the at least one magnet element. In other words, the poles of the magnet assembly face the outside of the plane defined by the yoke and the target material of the cathode assembly shown by way of example in FIGS.

  According to some embodiments, the cathode and magnet assemblies described herein can be used as a rotatable cathode assembly during static deposition. That means that the substrate can be held in a fixed position during the deposition process, while the cathode assembly can rotate about its axis of rotation. Typically, the cathode assemblies shown herein can be used to coat large area substrates.

According to some embodiments, the large area substrate may have a dimension of at least 0.174 m ² . Typically, this dimension can be from about 1.4 m ² to about 8 m ² , more typically from about 2 m ² to about 9 m ² , or even up to 12 m ² . Typically, the substrates provided with structures, devices such as cathode assemblies, and methods according to embodiments described herein are large area substrates described herein. For example, a large-area substrate has a GEN5 corresponding to an approximately 1.4 m ² substrate (1.1 m × 1.3 m), a GEN 7. Corresponding to an approximately 4.29 m ² substrate (1.95 m × 2.2 m). 5, GEN 8.5 corresponding to a substrate of about 5.7 m ² (2.2 m × 2.5 m), or even GEN 10 corresponding to a substrate of about 8.7 m ² (2.85 m × 3.05 m) be able to. Larger generations such as GEN11 and GEN12 and corresponding substrate areas can be implemented as well.

  Typically, the substrates described herein can be made from any material suitable for material deposition. For example, the substrate is selected from the group consisting of glass (eg, soda lime glass, borosilicate glass, etc.), metal, polymer, ceramic, composite material, carbon fiber material, or any other material, or combination of materials. It can be made from a material and this material can be coated by a deposition process.

  According to some embodiments, the deposition material can be selected according to the deposition process and the subsequent application of the coated substrate. For example, the target deposition material can be a material selected from the group consisting of metals such as aluminum, molybdenum, titanium, copper, silicon, indium tin oxide, and other transparent oxides. Typically, the target material can be a ceramic oxide, and more typically the material is selected from the group consisting of indium-containing ceramics, tin-containing ceramics, zinc-containing ceramics, and combinations thereof. It can be ceramic. For example, the deposited material can be IGZO.

  According to some embodiments, a method for depositing a film on a substrate is provided. An example of such a method can be seen in the schematic flow diagram of FIG. The method 700 typically includes generating at least two plasma regions, as indicated by block 710. Typically, the plasma region is generated in a deposition chamber, such as a deposition chamber suitable for PVD processes. Within the process chamber, a cathode assembly having one or more magnet assemblies may be disposed, as indicated by 720 as a first condition for method 700. Typically, the cathode assembly can be the cathode assembly described above with respect to FIGS. 2-4, and the one or more magnet assemblies in the cathode assembly are shown in FIGS. 5a, 5b, 6a, and It can be the magnet assembly described above with respect to 6b. In FIG. 7, block 721 represents an option where the cathode assembly is one of the cathode assemblies shown in FIGS. 2-4 and is shown as a dotted line as an option.

  According to some embodiments described herein, the cathode assembly used to generate a magnetic field that causes the formation of a plasma region in the vicinity of the cathode assembly can be a rotatable cathode assembly. Is represented by block 730. Typically, the cathode assembly is rotatable about a rotation axis, and the one / plurality of magnet assemblies are arranged fixedly with respect to the rotation axis.

  Typically, a cathode assembly that can be used to generate a plasma region according to embodiments described herein can provide a first angular coordinate for a magnetic pole and a second angular coordinate for a further magnetic pole. it can. One or more magnet assemblies used in the cathode assembly generally provide an inner pole and at least one outer pole. According to one embodiment, the two plasma regions are generated by a cathode assembly having one magnet assembly. The inner magnetic pole of the magnet assembly is located at the first angular coordinate of the cathode assembly, and the outer magnetic pole of the magnet assembly is located at the second angular coordinate of the cathode assembly. According to a further embodiment, the inner magnetic pole of the first magnet assembly is located at the first angular coordinate of the cathode assembly, and the inner magnetic pole of the second (or further) magnet assembly is the second corner of the cathode assembly. Placed at the coordinates. For example, the cathode assembly used in the method of depositing a film in the substrate can be the cathode assembly described with respect to FIG. 2 or FIG. Typically, the one / several magnet assembly is placed on the coating side of the cathode assembly to coat the substrate.

  According to some embodiments, block 740 relates to the placement of the first angular coordinate and the second angular coordinate, specifically, between the first angular coordinate and the second angular coordinate. Related to angle. Typically, this angle is about 20 degrees to about 160 degrees, more typically about 30 degrees to 120 degrees, and even more typically about 50 to about 100 degrees. According to one embodiment, the angle between the first angular coordinate and the second angular coordinate is greater than about 30 degrees and less than about 80 degrees. In one example, the angle between the first angular coordinate and the second angular coordinate is about 60 degrees.

  A cathode assembly for a sputter deposition apparatus having a coating side for coating on a substrate is provided. The cathode assembly includes a rotating target assembly adapted to rotate the target material about an axis of rotation and at least one first magnet assembly. The at least one magnet assembly typically has an inner pole and at least one outer pole and is adapted to generate one or more plasma regions. Furthermore, the cathode assembly has a first angular coordinate for the magnetic pole and a second angular coordinate for the additional magnetic pole. Typically, these poles are provided against the coating side. The first angular coordinate and the second angular coordinate define an angle α that is greater than about 20 degrees and less than about 160 degrees. According to some embodiments, the inner magnetic pole of the first magnet assembly is provided at a first angular coordinate and the outer magnetic pole of the first magnet assembly is provided at a second angular coordinate. Typically, the cathode assembly can include a second magnet assembly having an inner pole and at least one outer pole. The second magnet assembly can be adapted to generate one or more plasma regions. When the second magnet assembly is provided, the inner magnetic pole of the first magnet assembly is provided at the first angular coordinate, and the inner magnetic pole of the second magnet assembly is provided at the second angular coordinate. According to some embodiments, the first magnet assembly and / or the second magnet assembly is held in a fixed position relative to the axis of rotation of the cathode assembly. Typically, each of the first magnet assembly and / or the second magnet assembly can provide two plasma regions. In one embodiment that can be combined with other embodiments described herein, the first and second angular coordinates can form an angle α that is greater than about 30 degrees and less than about 80 degrees. it can. Typically, the magnet assembly can be disposed within the target assembly. In one exemplary embodiment, the magnet assembly can be adapted to generate two or more plasma regions simultaneously. In addition, a cathode assembly can be provided that typically includes two or more magnet assemblies, the magnet assemblies being disposed substantially symmetrically within the cathode assembly. According to some embodiments described herein, the magnetic poles of the first magnet assembly and / or the second magnet assembly can include magnet elements arranged to form a closed loop. In particular, the magnetic poles of the first magnet assembly and / or the second magnet assembly can typically include magnet elements arranged to form a structure in a closed loop. In some embodiments, the magnetic poles of the first magnet assembly and / or the second magnet assembly can be oriented outside the plane defined by the closed loop. Typically, at least two magnet assemblies can be rigidly connected to each other. According to some embodiments, the at least two magnet assemblies can be adapted to simultaneously coat the same substrate.

  In a further aspect, a method for depositing a film on a substrate in a sputter deposition apparatus is provided. The sputter deposition apparatus can include a rotating target assembly and a coating side for coating on the substrate. Typically, the target assembly is adapted to rotate the target material about an axis of rotation. Further, the cathode assembly can include at least one magnet assembly held in a fixed position with respect to the rotational axis. The magnet assembly includes an inner magnetic pole and at least one outer magnetic pole and is adapted to generate one or more plasma regions. Typically, the cathode assembly further has a first angular coordinate for a magnetic pole provided for the coating side and a second angular coordinate for a further magnetic pole provided for the coating side. A method of depositing a film on a substrate includes: coating at least one first plasma region with a magnetic field generated by a magnetic pole disposed at a first angular coordinate; Generating at least one second plasma region with a magnetic field generated by magnetic poles arranged in coordinates. Typically, the first angular coordinate and the second angular coordinate define an angle α that is greater than about 20 degrees and less than about 160 degrees. According to some embodiments described herein, the first angular coordinate and the second angular coordinate can form an angle α that is greater than about 30 degrees and less than about 80 degrees.

  Typically, the foregoing cathode assembly can be described as a multi-directional racetrack cathode with angles between the magnetic poles of magnet assemblies oriented in different directions. As described above, by placing one or more magnet assemblies into a single cathode, film properties comparable to those of a cathode assembly that provides split sputtering mode or continuous swing can be achieved. However, in the cathode assembly according to the embodiments described herein, it is not necessary to adjust the components in the cathode. Furthermore, due to the fact that the magnet assemblies in one cathode assembly according to embodiments of the present invention are operated simultaneously, film properties are realized in less time when compared to cathode assemblies with split sputter mode or continuous swing. can do. Also, the racetrack arrangement described above can be reflected symmetrically with respect to the back side of the cathode assembly in order to achieve simultaneous coating on the substrates placed on both sides of the cathode assembly.

  While the above is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope of the invention. Determined by the claims.

Claims (12)

A cathode assembly (130, 200, 300, 400) for a sputter deposition apparatus having a coating side for coating on a substrate (280, 480, 481), the cathode assembly comprising:
A rotating target assembly adapted to rotate the target material (210, 310, 410) about the axis of rotation (220, 320, 420);
At least a first magnet assembly (230, 330, 340, 430, 431, 432, 433) that maintains a fixed position regardless of rotation of the target material, comprising an inner pole (236, 332, 337) and at least one It has an outer pole (236, 331, 336) and one or more plasma regions (240, 250, 340, 341, 350, 351, 440, 441, 442, 443, 444, 445, 446, 447). At least a first magnet assembly (230, 330, 340, 430, 431, 432, 433) adapted to generate
The cathode assembly (130, 200, 300, 400) is provided with respect to the coating side and a first angular coordinate (260, 360, 460, 462) with respect to a magnetic pole provided with respect to the coating side. Second angular coordinates (270, 370, 461, 463) for further magnetic poles,
The first angular coordinates (260, 360, 460, 462) and the second angular coordinates (270, 370, 461) define an angle α greater than 20 degrees and smaller than 160 degrees;
The cathode assembly is a second magnet assembly (335, 431, 432, 433) that maintains a fixed position regardless of rotation of the target material, the inner magnetic pole (337, 473, 475, 477) and at least one of A second one having outer poles (336, 472, 474, 476) and adapted to generate one or more plasma regions (350, 351, 442, 443, 444, 445, 446, 447) Further comprising a magnet assembly (335, 431, 432, 433), wherein the inner magnetic pole (332, 471) of the first magnet assembly (330, 430) is provided at the first angular coordinate (360, 460). The inner magnetic poles (337, 473, 475, 477) of the second magnet assembly (335, 431, 432, 433). But provided it is in the second angular coordinates (370,461,462,463),
A cathode assembly , wherein at least two of said magnet assemblies (330, 340, 430, 431, 432, 433) are rigidly connected to each other .   Each of the first magnet assembly (330, 430) and / or the second magnet assembly (335, 431, 432, 433) has two cross sections perpendicular to the rotation axis (220, 320, 420). The cathode assembly of claim 1, wherein the cathode assembly generates a plasma region (340, 341, 440, 441, 442, 443, 444, 445, 446, 447).   The first angular coordinate (260, 360, 460) and the second angular coordinate (270, 370, 461, 462, 463) form an angle α greater than 30 degrees and less than 80 degrees. Or the cathode assembly according to 2.   The cathode assembly according to any one of claims 1 to 3, wherein the magnet assembly (230, 330, 340, 430, 431, 432, 433) is disposed within the target assembly.   The magnet assembly (230, 330, 340, 430, 431, 432, 433) simultaneously generates two or more plasma regions (340, 341, 440, 441, 442, 443, 444, 445, 446, 447). 5. A cathode assembly according to any one of the preceding claims, adapted to do so.   The cathode assembly (130, 200, 300, 400) includes two or more magnet assemblies (230, 330, 340, 430, 431, 432, 433), and the cathode assembly (130, 200, 300, 400). The cathode assembly according to any one of the preceding claims, wherein the arrangement of the magnet assemblies (230, 330, 340, 430, 431, 432, 433) in the interior is substantially symmetrical.   Magnet elements (520, 620, 630) arranged such that the magnetic poles of the first magnet assembly and / or the second magnet assembly (230, 330, 340, 430, 431, 432, 433) form a closed loop. The cathode assembly according to claim 1, comprising:   At least one of the magnetic poles of the first magnet assembly and / or the second magnet assembly (230, 330, 340, 430, 431, 432, 433) is arranged so as to form a closed loop (530). 630). A cathode assembly according to any one of the preceding claims.   Cathode assembly according to claim 7 or 8, wherein the magnetic poles of the magnet elements (520, 530, 620, 630) are oriented in the normal direction of the plane defined by the closed loop. It said at least two magnetic assemblies (330,335,430,431,432,433) is adapted to coating the same substrate at the same time, the cathode assembly as claimed in any one of claims 1 to 9. A method of depositing a film on a substrate (110, 280, 480, 481) in a sputter deposition apparatus (100) having a rotating target assembly and having a coating side for coating on the substrate, the target The assembly is adapted to rotate the target material (210, 310, 410) about the axis of rotation (220, 320, 420);
The cathode assembly is at least a first magnet assembly (230, 330, 340, 430, 431, 432, 433) that maintains a fixed position regardless of rotation of the target material, and an inner magnetic pole (236, 332, 337). And at least one outer magnetic pole (236, 331, 336) and one or more plasma regions (240, 250, 340, 341, 350, 351, 440, 441, 442, 443, 444, 445, 446). 447) at least a first magnet assembly (230, 330, 340, 430, 431, 432, 433) adapted to generate
The cathode assembly (130, 200, 300, 400) is provided for the coating side with a first angular coordinate (260, 360, 460, 462) for a magnetic pole provided for the coating side. Second angular coordinates (270, 370, 461, 463) for further magnetic poles,
The cathode assembly is a second magnet assembly (335, 431, 432, 433) that maintains a fixed position regardless of rotation of the target material, the inner magnetic pole (337, 473, 475, 477) and at least one of A second one having outer poles (336, 472, 474, 476) and adapted to generate one or more plasma regions (350, 351, 442, 443, 444, 445, 446, 447) Further comprising a magnet assembly (335, 431, 432, 433), the inner magnetic pole (332, 471) of the first magnet assembly (330, 430) is provided at the first angular coordinate (360, 460). The inner magnetic poles (337, 473, 475, 477) of the second magnet assembly (335, 431, 432, 433) Provided in the second angular coordinates (370,461,462,463), the method comprising:
At least one magnetic field generated by a magnetic pole (236) located at the first angular coordinate (260, 360) to coat the substrate (110, 280, 480, 481) on the coating side At least one second plasma region having a magnetic field generated by a first plasma region (240, 340, 341) and a magnetic pole (235, 337) disposed at the second angular coordinate (270, 370). Generating (250, 350, 351),
The first angular coordinate and the second angular coordinate define an angle α greater than 20 degrees and smaller than 160 degrees;
The method wherein at least two of the magnet assemblies (330, 340, 430, 431, 432, 433) are rigidly coupled to each other . 12. The method of claim 11 , wherein the first angular coordinates (260, 360) and the second angular coordinates (270, 370) form an angle [alpha] greater than 30 degrees and less than 80 degrees.

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