JP5180796B2 - Magnetron sputtering apparatus and magnetron sputtering method - Google Patents

Description

  The present invention relates to a magnetron sputtering apparatus and a magnetron sputtering method.

Magnetron sputtering technology is widely used as a means for improving the deposition rate in sputtering deposition. In the magnetron sputtering, for example, in Patent Document 1, sputtering is performed while rotating a magnet plate and a sputtering trap including a shielding plate relative to a target with a normal passing through the center of the magnet plate as an axis. It is disclosed.
JP 2008-163384 A

  The sputtering trap in Patent Document 1 includes a shielding plate provided with an opening having a size corresponding to a magnet, and the opening is always at a position corresponding to the magnet. And there is a disclosure that charged particles such as recoil ions and electrons traveling to the wide-angle side are blocked by the shielding plate and do not enter the substrate. The role of the shielding plate in Patent Document 1 reaches the substrate. It does not merely block the particles that are not desired to be shielded, and does not actively control the film thickness distribution of the portion to be deposited on the substrate by the shielding plate.

  The present invention has been made in view of the above-described problems, and provides a magnetron sputtering apparatus and a magnetron sputtering method capable of easily controlling the film thickness distribution using a shield.

According to one aspect of the present invention, a substrate holding part capable of holding a substrate and a plate-like target provided to face the substrate holding part are provided rotatably while facing the opposite surface of the sputtering target surface. An electron orbit having a center at a position eccentric with respect to the rotation center is provided between the target and the substrate, and the target is viewed from the substrate side. A shield that rotates in synchronization with the magnet without changing a relative position to the electron orbit while shielding a part of the electron orbit in a plan view. A magnetron sputtering apparatus is provided.
According to another aspect of the present invention, a substrate holding portion capable of holding a substrate and an inner portion of the target that is rotatable around a central axis of a cylindrical target provided to face the substrate holding portion. A side view of the magnet provided between the target and the substrate, provided between the target and the substrate, and provided between the target and the substrate. And a shielding body that rotates in synchronization with the magnet without shielding a part of the orbit of the electron and changing a relative position with respect to the orbit of the electron. Provided.
According to still another aspect of the present invention, a substrate holding portion capable of holding a substrate and a straight line facing a surface opposite to a sputtering target surface of a plate-like target provided facing the substrate holding portion. A magnet that is movably provided and generates a circular orbit of electrons in the vicinity of the surface to be sputtered, and is provided between the target and the substrate, and the electron in a plan view when the target is viewed from the substrate side. There is provided a magnetron sputtering apparatus comprising: a shielding body that linearly moves in synchronization with the magnet without changing a relative position with respect to the electron orbit while shielding a part of the orbit. The
According to still another aspect of the present invention, a substrate is opposed to a surface to be sputtered of a plate-like target, and a magnet is opposed to a surface opposite to the surface to be sputtered in the target so as to be close to the surface to be sputtered. An electron orbit is generated, and a shield is provided between the target and the substrate to shield a part of the electron orbit in a plan view when the target is viewed from the substrate side. By rotating the shield in synchronization with a rotation center eccentric with respect to the center of the electron orbit, the shield remains in a state where a part of the electron orbit is shielded. In addition, a magnetron sputtering method is provided in which the electron is rotated without changing its relative position with respect to the circular orbit.
According to still another aspect of the present invention, the substrate is opposed to the outer peripheral surface of the cylindrical target, and electrons are provided near the outer peripheral surface of the target by a magnet provided on the inner peripheral side of the cylindrical target. A shield that shields a part of the orbit of the electron in a side view when the outer peripheral surface of the target is viewed from the substrate side is provided between the target and the substrate; And the shield are rotated synchronously around the center axis of the target, so that the shield remains in a state where a part of the electron orbit is shielded and is relative to the electron orbit. There is provided a magnetron sputtering method characterized by rotating without changing the position.
According to still another aspect of the present invention, a substrate is opposed to a surface to be sputtered of a plate-like target, and a magnet is opposed to a surface opposite to the surface to be sputtered in the target so as to be close to the surface to be sputtered. An electron orbit is generated, and a shield is provided between the target and the substrate to shield a part of the electron orbit in a plan view when the target is viewed from the substrate side. By moving the shield in a straight line in synchronization with the shield, the shield is moved in a straight line without blocking a part of the electron orbit and changing the relative position of the electron with respect to the orbit. A magnetron sputtering method is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the magnetron sputtering apparatus and the magnetron sputtering method which can control film thickness distribution easily using a shield are provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]
The magnetron sputtering apparatus according to the present embodiment has a processing chamber that can introduce various gases through a gas introduction system and can be evacuated through an exhaust system, and controls the amount of gas introduced and the amount of exhaust. Thus, it is possible to bring the processing chamber to a desired pressure with a desired gas.

  As shown in FIG. 1B, the substrate 10 and the target 12 are disposed to face each other in the processing chamber 50. FIG. 1A shows a plan view of the shield 14 and the target 12 from the substrate 10 side in FIG. FIG. 2 shows a planar positional relationship between the magnet 13 and the target 12.

  The substrate 10 that is a film formation target is, for example, a semiconductor wafer, a disk-shaped recording medium, a magnetic disk (hard disk), a mirror, a display panel, a solar cell panel, or the like. For example, the substrate holding unit 11 having an electrostatic chuck mechanism. Held on.

  The target 12 is made of a material containing a film forming substance on the substrate 10 and is formed in a circular plate shape, for example. The target 12 is held by a backing plate (not shown) in a state where the surface to be sputtered 12 a faces the film formation surface of the substrate 10.

  On the opposite surface (back surface) side of the surface 12 a to be sputtered of the target 12, a magnet 13 is provided facing the back surface of the target 12. As shown in FIG. 2, the magnet 13 is held by a holding member 71 made of a nonmagnetic material, with a ring-shaped inner magnet 15 and a ring-shaped outer magnet 16 disposed so as to surround the inner magnet 15. Has a structured.

  The magnet 13 is provided so as to be rotatable about the center C1 of the target 12 as a center of rotation. As shown in FIG. 2, the center (center of gravity) C2 of the magnet 13 in the planar direction is eccentric with respect to the rotation center C1. Therefore, as will be described below with reference to FIG. 1, in the state where plasma is generated in the processing chamber 50, the magnetic field from the magnet 13 causes the center of the target 12 (magnet) to be near the surface to be sputtered 12a. 13) A racetrack-shaped electron orbit 20 having a center C2 at a position eccentric with respect to C1 is generated.

  That is, a magnetic field line penetrating the target 12 is formed by the magnetic field generated by the magnet 13 as shown in FIG. 1B, and this forms a racetrack-shaped magnetic field line tunnel according to the planar shape of the inner magnet 15 and the outer magnet 16. . A magnetic field B substantially parallel to the surface to be sputtered 12a is generated in the vicinity of the surface to be sputtered 12a of the target 12, and electrons make a Larmor motion that rotates around the lines of magnetic force in the magnetic field. Further, at the time of sputtering film formation, an electric field with the cathode on the target 12 side and an anode on the substrate 10 side is applied, and an electric field E acts near the surface to be sputtered 12a. Accordingly, there are E and B orthogonal to each other in the vicinity of the surface to be sputtered 12a, and in these orthogonal E and B, electrons perform E × B drift motion while performing Larmor motion, and the vicinity of the surface to be sputtered 12a is racetrack. Circle around. FIG. 1A schematically shows the electron orbit 20 of the electrons.

  As a result, the electrons are constrained by the orbit 20 in the vicinity of the surface to be sputtered 12a, so that ionization is promoted in the orbit 20 and the high-density plasma state in the vicinity of the surface to be sputtered 12a is maintained. ) Can be improved. A plasma having a sufficient density that substantially contributes to sputtering is generated only at and around the electron orbit 20, and therefore, the constituent material is present on the surface to be sputtered 12 a at a portion facing the electron orbit (high density plasma region) 20. Sputtered (struck out).

  Since the magnet 13 rotates during the sputtering film formation, the electron orbit 20 rotates accordingly. Here, as described above with reference to FIG. 1A, since the center C2 of the electron orbit 20 is eccentric with respect to the center of rotation (center of the target 12) C1, the electron orbit 20 is the surface to be sputtered. Instead of constantly facing the same location in 12a, the position of the high-density plasma region facing the surface to be sputtered 12a changes every moment as the electron orbit 20 rotates.

  As shown in FIG. 1B, a shield 14 is provided between the target 12 and the substrate 10. In a plan view of the target 12 viewed from the substrate 10 side, the shield 14 shields a part of the electron orbit 20 from the substrate 10 as shown in FIG. The shield 14 is formed in, for example, a fan-like plate shape, and in the example shown in FIG. 1A, the shield 14 is located on the side opposite to the eccentric direction of the electron orbit 20 with respect to the target center C1. A portion near the center of the electron orbit 20 is shielded by the peripheral portion. Then, the shield 14 that shields a part of the electron orbit 20 rotates around the target center C <b> 1 in synchronism with the magnet 13 without changing the relative position with the electron orbit 20.

  An example of a configuration for realizing the synchronous rotation of the magnet 13 and the shield 14 is shown in FIG. In this specific example, the rotating shaft 17 of the magnet 13 extends through the center of the target 12 into the processing chamber 50, and the shield 14 is attached to the lower end portion of the rotating shaft 17. The rotating shaft 17 is connected to a rotation driving mechanism (not shown) outside the processing chamber 50. The magnet 13 and the shield 14 are rotated synchronously (integrally) without changing the positional relationship (the positional relationship in the circumferential direction, the radial direction, and the vertical direction).

  Alternatively, as shown in FIG. 10, the shield 14 may be provided to be rotatable around the shaft portion 11 a of the substrate holding portion 11 via the connecting member 19. The shaft portion 11 a of the substrate holding portion 11 is located on the rotation center line of the magnet 13. The board | substrate holding | maintenance part 11 does not rotate, but the shield 14 rotates around the shaft part 11a which is still. The rotating shaft 17 of the magnet 13 does not penetrate the target 12 but extends upward and is connected to a rotation driving mechanism (not shown). The connecting member of the shield 14 is connected to a rotation driving mechanism provided outside the processing chamber 50 separately from the rotation driving mechanism of the magnet 13. Even in this case, the magnet 13 and the shield 14 are rotated in synchronization with each other by the control of the respective rotation driving mechanisms.

  Next, the magnetron sputtering method according to this embodiment will be described.

  In a state in which the inside of the processing chamber 50 is in a desired pressure atmosphere with a desired gas, a discharge is generated in the processing chamber 20 with the target 12 side as a cathode and the substrate 10 side as an anode to generate plasma, and ions generated thereby Is accelerated toward the target 12 by the electric field between the target 12 and the substrate 10 and collides with the surface to be sputtered 12 a of the target 12, so that particles of the target material are knocked out of the target 12 to form the substrate 10. Deposits on the film surface. During the sputtering film formation, the substrate 10 and the target 12 are not rotated and are stationary.

  In the present embodiment, the shield 14 shields a part of the electron orbit (high density plasma region) 20 in a plan view when the target 12 is viewed from the substrate 10 during sputtering film formation. Since the shield 14 rotates in synchronization with the magnet 13 without changing the relative position with the magnet 13, the relative position between the shield 14 and the electronic orbit 20 does not change during rotation. Therefore, the shield 14 always shields the same portion of the electron orbit 20 during rotation.

  FIG. 3 shows a state where the magnet 13 (electronic orbit 20) and the shield 14 are rotated by 180 ° around the center C1 from the state shown in FIG. A movement locus drawn around the rotation center C1 by the synchronous rotation of the shield 14 and the electronic orbit 20 in the portion shielded by the shield 14 in the electron orbit 20 is schematically shown by a two-dot chain line in FIG. Indicate.

  Since the portion corresponding to the two-dot chain line region between the substrate 10 and the target 12 is always shielded by the shield 14, the portion positioned below the two-dot chain line region on the substrate 10 is knocked out from the target 12. The formed particles are difficult to reach, and the film formation rate at that portion is relatively lower than at other portions. It should be noted that the target material particles do not fly at all in the portion located below the two-dot chain line region in the substrate 10, and the arrival of particles flying obliquely from other parts other than the two-dot chain line region Is possible.

  Here, as a comparative example, considering the case where only the magnet 13, that is, the electronic orbit 20 rotates, and the shield 14 does not rotate, the film formation rate in the portion of the substrate 10 located below the shield 14 is low. . That is, the film thickness of a portion in the circumferential direction facing the shield 14 on the film formation surface of the substrate 10 is locally thinned, resulting in variations in film thickness distribution as viewed in the circumferential direction.

  On the other hand, in the present embodiment, the shield 14 rotates in synchronization with the electron orbit 20 while shielding a part of the electron orbit 20, so that it is indicated by the two-dot chain line in FIG. In addition, a portion having a certain diameter from the target center (rotation center) C1 is always shielded over the entire circumference. Since the shield 14 and the electronic orbit 20 rotate and move in the circumferential direction with the relative positional relationship shown in FIGS. 1 and 3, the portion of the electron orbit 20 that is not shielded by the shield 14 is shielded. It does not overlap the body 14, and the movement trajectory of the unshielded portion of the electron orbit 20 is exposed to the deposition surface of the substrate 10 over the entire circumference. Therefore, in this embodiment, the film thickness does not vary in the circumferential direction due to the presence of the shield 14.

  Regarding the radial direction, the film formation rate varies between the two-dot chain line region and the other regions, but the film thickness originally tends to vary in the radial direction due to other factors such as gas distribution conditions. If there is, a part of the electron orbit 20 corresponding to a portion with a high film formation rate, which tends to be relatively thick, is shielded, resulting in a variation in the film formation rate in the radial direction. It can correct | amend and can aim at equalization of the film thickness distribution of radial direction.

  For example, when the deposition rate near the center of the substrate tends to be high in a state where the present embodiment is not applied, as shown in FIGS. 1 and 3, a part of the electron orbit 20 corresponding to the vicinity of the center of the substrate is shielded. As a result, it is possible to suppress the film formation rate near the center of the substrate, and as a result, to achieve uniform film thickness distribution in the radial direction. Note that this embodiment can be applied not only for the purpose of making the film thickness uniform, but also for intentionally causing a film thickness difference in the radial direction.

  The relative position between the shield 14 and the electron orbit 20 can be changed, and it is possible to control which part of the electron orbit 20 is shielded by the shield 14 which part of the film forming rate in the radial direction is suppressed. It is.

  For example, as shown in FIG. 4 and FIG. 5 in which the shield 14 and the electron orbit 20 are rotated 180 degrees around the center C1 from the state of FIG. 4, the electron orbit 20 is relatively far from the center C1. When the circumferential position of the shield 14 is adjusted so that the outer peripheral portion is shielded, the film forming rate on the outer peripheral side of the substrate is relatively low, and the film forming rate in the other portions is relatively high. It is possible to control the film thickness distribution by the above.

  As described above, in the configuration in which the shield 14 is attached to the rotary shaft 17 of the magnet 13, the shield 14 and the electronic orbit can be easily moved by moving the shield 14 in the circumferential direction around the rotary shaft 17. The relative position with respect to 20 can be changed.

  As shown in FIG. 11, a plurality of (for example, two in FIG. 11) shields 14 are attached to the rotary shaft 17, and the shields 14 are moved in the circumferential direction around the rotary shaft 17. The overlapping area is adjusted, and as a result, the entire area of the plurality of shields 14 can be varied to adjust the area of the shielding part in the electronic orbit 20. In addition, the part to be shielded in the electronic orbit 20 is not limited to one place, and a plurality of places may be partially shielded at the same time. The position, number, area, and the like of the shielding portions in the electronic orbit 20 are appropriately set according to what film thickness distribution is desired.

  According to the present embodiment, the film thickness distribution can be easily achieved only by adjusting the relative position in the circumferential direction between the shield 14 and the electronic orbit 20, that is, the magnet 13 without changing the design of the magnet 13 or controlling the gas distribution. Can be controlled. Further, when changing the relative position of the shield 14 with respect to the magnet 13, the shield 14 is moved in the circumferential direction around the rotation shaft 17 by electrical control from the outside of the processing chamber, for example. It is also possible to change the position, and in this case, the film thickness distribution can be controlled in real time during processing without the need to stop the apparatus or open the atmosphere. Furthermore, in that case, a film thickness measurement mechanism for measuring the film thickness during processing is provided, and the film thickness measurement result (signal) from the film thickness measurement mechanism is fed back to the mechanism for adjusting the circumferential position of the shield 14. It is also possible to adjust the relative position of the shield 14 with respect to the electron orbit 20 in real time during processing to control the film thickness distribution as desired.

[Second Embodiment]
Next, FIG. 6 is a schematic diagram showing the positional relationship among the target 31, the substrate 34, and the shield 32 provided in the processing chamber in the magnetron sputtering apparatus according to the second embodiment of the present invention.

  In the present embodiment, the target 31 is formed in a cylindrical shape. The outer peripheral surface of the target 31 is a surface to be sputtered. A substrate holding unit 33 is disposed around the target 31. The substrate 34 is held by the substrate holder 33 with its film-forming surface facing the surface to be sputtered (outer peripheral surface) of the target 31.

  As shown in FIG. 8, a magnet 35 and a rotating body 36 are provided inside the cylindrical target 31. The rotating body 36 is provided so as to be rotatable around the central axis C of the target 31, and a magnet 35 is provided on the outer peripheral surface of the rotating body 36. As the rotating body 36 rotates, the magnet 35 also rotates around the central axis C of the target 31.

  The magnetic pole of the magnet 35 extends in the axial direction of the target 31 and faces the inner peripheral surface of the target 31. In the state where plasma is generated in the discharge space between the target 31 and the substrate 34 in the processing chamber, the vicinity of the outer peripheral surface of the target 31 that is the surface to be sputtered is shown in FIG. Thus, a racetrack-shaped electron orbit 30 extending in the axial direction of the target 31 is generated.

  Also in this embodiment, there are an electric field E and a magnetic field B that are orthogonal to each other in the vicinity of the surface to be sputtered of the target 31, and in this orthogonal E and B, electrons perform Larmor motion. An E × B drift motion is performed, and the electron orbit 30 near the surface to be sputtered circulates in a racetrack shape.

  Since electrons are constrained by the orbit 30 near the surface to be sputtered, ionization is promoted by the orbit 30 and the high density plasma state in the vicinity of the surface to be sputtered is maintained, and the plasma having a sufficient density that substantially contributes to sputtering is obtained. It occurs only in the electron orbit 30 and its vicinity, and therefore, the constituent material is sputtered on the surface to be sputtered at a portion facing the electron orbit (high density plasma region) 30.

  During sputtering film formation, the magnet 35 rotates around the central axis C of the target 31, and accordingly, the electron orbit 30 also rotates.

  A shield 32 is provided between the outer peripheral surface (surface to be sputtered) of the target 31 and the substrate 34. As shown in FIG. 6, the shield 32 shields a part of the electron orbit 30 as viewed from the side when the outer peripheral surface of the target 31 is viewed from the substrate 34 side.

  In the shield 32, one end portion (left end portion in FIG. 6) viewed in the target rotation direction is located at substantially the center in the target axis direction. The shield 32 is formed in a bifurcated shape so as to spread in the target axial direction from the one end to the other end. In the example shown in FIG. 6, both ends of the electronic orbit 30 in the target axial direction are separated by the bifurcated portion. The area is shielded.

  The shield 32 is connected to a rotation drive mechanism provided outside the processing chamber, and is synchronized with the magnet 35 without changing the relative position of the electron orbit 30 while shielding a part of the electron orbit 30. And rotate around the target center axis C. That is, the magnet 35 and the shield 32 are rotated synchronously without changing the mutual positional relationship (circumferential direction, radial direction, and vertical positional relationship).

  Next, the magnetron sputtering method according to this embodiment will be described.

  In a state in which the processing chamber is in a desired pressure atmosphere with a desired gas, a discharge is generated between the target 31 side as a cathode and the substrate 34 side as an anode to generate plasma. Is accelerated toward the target 31 by the electric field between the target 34 and the substrate 34, and collides with the outer peripheral surface (surface to be sputtered) of the target 31, so that particles of the target material are knocked out of the target 31 to form the substrate 34. Deposits on the film surface. During the sputtering film formation, the substrate 34 and the target 31 are not rotated but are stationary.

  In the present embodiment, the shield 32 shields a part of the electron orbit (high density plasma region) 30 during sputtering film formation. Since the shield 32 rotates in synchronization with the magnet 35 without changing the relative position with the magnet 35, the relative position between the shield 32 and the electronic orbit 30 does not change during rotation. Therefore, the shield 32 always shields the same portion of the electron orbit 30 during rotation.

  Accordingly, in the substrate 34, the particles struck from the target 31 are unlikely to reach the portion facing the portion where the electron orbit 30 is always shielded, and the film formation rate of the portion is higher than that of the other portions. Relatively low.

  For example, when the film formation rate on both ends in the target axis direction of the substrate 34 tends to be high due to other conditions, as shown in FIG. By shielding, it is possible to suppress the film formation rate at both ends in the target axial direction, and as a result, it is possible to realize a uniform film thickness distribution in the target axial direction on the substrate 34. Note that this embodiment can be applied not only for the purpose of making the film thickness uniform, but also for intentionally causing a film thickness difference in the axial direction.

  Also in the present embodiment, the relative position between the shield 32 and the magnet 35, that is, the electronic orbit 30, can be changed. It is controllable depending on whether it is shielded.

  For example, as shown in FIG. 7, when the position of the shield 32 is adjusted so that the vicinity of the center in the target axis direction is shielded in the electronic orbit 30, the substrate 34 is formed near the center in the target axis direction. It is possible to control the film thickness distribution by relatively reducing the film rate and relatively increasing the film formation rate in other portions.

  Also in this embodiment, without changing the design of the magnet 35 and controlling the gas distribution, the film thickness distribution can be easily adjusted only by adjusting the relative position in the circumferential direction between the shield 32 and the electronic orbit 30, that is, the magnet 35. You can control.

[Third Embodiment]
Next, FIG. 9A is a schematic diagram showing a planar arrangement relationship between the target 41 and the magnet 42 in the magnetron sputtering apparatus according to the third embodiment of the present invention, and FIG. 9B is the same magnetron sputtering. It is a schematic diagram which shows the planar arrangement | positioning relationship of the target 41 in the apparatus, the electronic circuit track 40, and the shield 45.

  In the present embodiment, the target 41 is formed in a rectangular plate shape, for example. FIG. 9B shows the surface 41a to be sputtered of the target 41, and a substrate (not shown) is disposed in the processing chamber so as to face the surface to be sputtered.

  As shown in FIG. 9A, a magnet 42 is disposed opposite to the surface of the target 41 opposite to the surface 41a to be sputtered. The magnet 42 has a structure in which an inner magnet 43 and a ring-shaped outer magnet 44 arranged so as to surround the inner magnet 43 are held by a nonmagnetic material. The magnet 42 is provided so as to be linearly movable with respect to the stationary target 41.

  In the state where plasma is generated in the discharge space between the target 41 and the substrate in the processing chamber, the magnetic field from the magnet 42 causes the vicinity of the sputtering surface 41a of the target 41 to match the shape of the magnet 42. As shown in FIG. 9B, a racetrack-shaped electron orbit 40 is generated.

  Also in this embodiment, there are an electric field E and a magnetic field B that are orthogonal to each other in the vicinity of the surface to be sputtered 41a, as in the above-described embodiment, and electrons in the orthogonal E and B perform the Larmor motion and E × B drift motion is performed, and the electron orbit 40 in the vicinity of the surface 41a to be sputtered circulates in a racetrack shape.

  At the time of sputtering film formation, the magnet 42 moves linearly in the longitudinal direction of the rectangular target 41, for example, and accordingly, the electron orbit 40 moves linearly in the longitudinal direction of the target 41.

  A shield 45 as shown in FIG. 9B is provided between the surface 41a to be sputtered of the target 41 and the substrate. As shown in FIG. 9B, the shield 45 shields a part of the electron orbit 40 in a plan view of the surface 41 a to be sputtered of the target 41 from the substrate side.

  In the shield 45 illustrated in FIG. 9B, one end portion (the left end portion in FIG. 9B) viewed in the magnet moving direction is located at the approximate center in the target short direction. The shield 45 is formed in a bifurcated shape so as to spread in the short direction of the target from the one end to the other end, and in the example shown in FIG. The vicinity of both ends in the short direction is shielded.

  The shield 45 is connected to a drive mechanism provided outside the processing chamber, and is synchronized with the magnet 42 without changing the relative position of the electron orbit 40 while keeping a portion of the electron orbit 40 shielded. , Move linearly in the target longitudinal direction. That is, the magnet 42 and the shield 45 are linearly moved synchronously without changing the relative positional relationship.

  Next, the magnetron sputtering method according to this embodiment will be described.

  In a state in which the processing chamber is in a desired pressure atmosphere with a desired gas, a discharge is generated between the target 41 side as a cathode and the substrate side as an anode to generate plasma. By being accelerated toward the target 41 by the electric field between the substrate and colliding with the surface 41a to be sputtered of the target 41, particles of the target material are knocked out of the target 41 and deposited on the film-forming surface of the substrate. . During the sputtering film formation, the substrate and the target 41 are stationary.

  In the present embodiment, the shield 45 shields a part of the electron orbit (high density plasma region) 40 during sputtering film formation. Since the shield 45 moves linearly in synchronism with the magnet 42 without changing the relative position with the magnet 42, the relative position between the shield 45 and the electronic orbit 40 does not change during the movement. Therefore, the shield 45 always shields the same part of the electron orbit 40 during movement.

  Therefore, in the substrate, the particles struck from the target 41 are difficult to reach the portion of the substrate facing the portion where the electron orbit 40 is always shielded, and the film formation rate of that portion is relative to that of the other portions. Lower.

  For example, when the film formation rate on both ends in the target short direction tends to be high on the substrate due to other conditions or the like, as shown in FIG. By shielding the vicinity of both ends, it is possible to suppress the film formation rate on both ends in the target short direction, and as a result, it is possible to achieve a uniform film thickness distribution in the target short direction on the substrate. Note that this embodiment can be applied not only for the purpose of making the film thickness uniform, but also for intentionally causing a film thickness difference in the radial direction.

  Also in this embodiment, the relative position between the shield 45 and the magnet 42, that is, the electronic orbit 40 can be changed, and which part of the electron orbit 40 is controlled by the shield 45 to determine which part of the film formation rate is suppressed. It is controllable depending on whether it is shielded.

  Also in the present embodiment, the film thickness distribution can be easily controlled only by adjusting the relative position between the shield 45 and the electronic orbit 40, that is, the magnet 42, without changing the design of the magnet 42 or controlling the gas distribution. .

  The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to them, and various modifications can be made based on the technical idea of the present invention.

  The shape of the electronic orbit is not limited to a racetrack shape or an ellipse shape as in the above-described embodiment, but can take various shapes depending on the planar shape of the magnet. Also, the shape of the shield can be arbitrarily selected.

The schematic diagram which shows the arrangement | positioning relationship of the main elements in the magnetron sputtering apparatus which concerns on 1st Embodiment of this invention. The schematic diagram which shows the planar arrangement | positioning relationship between the magnet and target in the same magnetron sputtering apparatus. The schematic diagram which shows the state which the shield and the magnet (electronic circuit orbit) rotated 180 degrees around the rotation center C1 from the state shown in FIG. The schematic diagram similar to FIG. 1 of the state from which the relative position of the circumferential direction of a shield and a magnet (electronic orbit) is different from FIG. FIG. 5 is a schematic diagram illustrating a state in which the shield and the magnet (electronic orbit) are rotated by 180 ° around the rotation center C1 from the state illustrated in FIG. 4. The schematic diagram which shows the arrangement | positioning relationship of the main elements in the magnetron sputtering device which concerns on 2nd Embodiment of this invention. The schematic diagram similar to FIG. 1 of the state from which the relative position of the circumferential direction of a shield and a magnet (electronic circuit track) differs from FIG. The schematic diagram which shows the positional relationship of the magnet and target in the said 2nd Embodiment. The schematic diagram which shows the arrangement | positioning relationship of the main elements in the magnetron sputtering device which concerns on 3rd Embodiment of this invention. In 1st Embodiment, the schematic diagram which shows an example of the form with which the rotational drive mechanism of a magnet and a shield is different. The schematic diagram which shows an example of the structure which varies the area of a shield in 1st Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10,34 ... Substrate, 11, 33 ... Substrate holding part, 12, 31, 41 ... Target, 12a ... Sputtered surface, 13, 35, 42 ... Magnet, 14, 32, 45 ... Shield, 20, 30, 40 ... Electronic orbit, 50 ... Processing chamber

Claims (7)

A substrate holding unit capable of holding a substrate;
The circular orbit of electrons having a center at a position deviated from the center of rotation provided rotatably while facing the surface opposite to the surface to be sputtered of the plate-like target provided facing the substrate holding portion. A magnet generated near the surface to be sputtered,
Without changing the relative position of the electron orbit while shielding a part of the electron orbit in a plan view of the target from the substrate side provided between the target and the substrate, A shield that rotates in synchronization with the magnet;
A magnetron sputtering apparatus comprising: A substrate holding unit capable of holding a substrate;
A magnet that is provided on the inner peripheral side of the target so as to be rotatable around a central axis of a cylindrical target provided to face the substrate holding unit, and that generates an electron orbit near the outer peripheral surface of the target; ,
It is provided between the target and the substrate, and does not change the relative position with respect to the electron circulation while shielding a part of the electron orbit in a side view when the outer peripheral surface of the target is viewed from the substrate side. And a shield that rotates in synchronization with the magnet;
A magnetron sputtering apparatus comprising: A substrate holding unit capable of holding a substrate;
A magnet that is provided so as to be linearly movable while facing the surface opposite to the surface to be sputtered of the plate-like target provided facing the substrate holding unit, and that generates an electron orbit in the vicinity of the surface to be sputtered;
Without changing the relative position of the electron orbit while shielding a part of the electron orbit in a plan view of the target from the substrate side provided between the target and the substrate, A shield that moves linearly in synchronization with the magnet;
A magnetron sputtering apparatus comprising: The shield is provided so as to be able to change a relative position with the orbit of the electrons,
The magnetron sputtering apparatus according to any one of claims 1 to 3, wherein at least one of a location and an area shielded by the shield in the electron orbit is changeable. The substrate is opposed to the surface to be sputtered of the plate target,
A magnet is made to face the surface opposite to the surface to be sputtered in the target to generate an electron orbit in the vicinity of the surface to be sputtered,
Provided between the target and the substrate, a shield that shields a part of the orbit of the electrons in a plan view when the target is viewed from the substrate side;
The shield is shielded from a part of the electron orbit by rotating the magnet and the shield synchronously around a rotation center that is eccentric with respect to the center of the electron orbit. A magnetron sputtering method, wherein the magnetron sputtering method is carried out while maintaining the state and without changing the relative position of the electron with respect to the orbit. The substrate is opposed to the outer peripheral surface of the cylindrical target,
An electron orbit is generated in the vicinity of the outer peripheral surface of the target by a magnet provided on the inner peripheral side of the cylindrical target,
Provided between the target and the substrate is a shield that shields a part of the orbit of the electrons in a side view of the outer peripheral surface of the target viewed from the substrate side,
By rotating the magnet and the shield synchronously around the center axis of the target, the shield remains in a state where a part of the electron orbit is shielded, and the electron orbit A magnetron sputtering method characterized by rotating without changing the relative position with respect to. The substrate is opposed to the surface to be sputtered of the plate target,
A magnet is made to face the surface opposite to the surface to be sputtered in the target to generate an electron orbit in the vicinity of the surface to be sputtered,
Provided between the target and the substrate, a shield that shields a part of the orbit of the electrons in a plan view when the target is viewed from the substrate side;
By linearly moving the magnet and the shield in a straight line, the shield remains in a state in which a part of the electron orbit is shielded, and the straight line is not changed relative to the electron orbit. A magnetron sputtering method, characterized by being moved.

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