JP2009147305A - 半極性窒化物単結晶薄膜の成長方法及びこれを用いた窒化物半導体発光素子の製造方法 - Google Patents
半極性窒化物単結晶薄膜の成長方法及びこれを用いた窒化物半導体発光素子の製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 262
- 239000013078 crystal Substances 0.000 title claims abstract description 253
- 239000010409 thin film Substances 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 230000012010 growth Effects 0.000 claims abstract description 193
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011810 insulating material Substances 0.000 claims description 50
- 238000005530 etching Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 73
- 238000010586 diagram Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000034655 secondary growth Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】m面六方晶系単結晶基板上に半極性窒化物単結晶基底層を形成する段階、絶縁性物質パターン層を形成する段階、半極性窒化物単結晶基底層上に半極性窒化物単結晶薄膜を側方向成長させる段階を含み、半極性窒化物単結晶薄膜の側方向成長段階は、成長面の一部がa面を有するよう半極性窒化物単結晶薄膜を1次側方向成長させる段階、及び1次側方向成長させられた窒化物単結晶薄膜が合体して(11−22)面を有する半極性窒化物単結晶薄膜が形成されるように2次側方向成長させる段階を含む窒化物単結晶薄膜の成長方法を提供する。
【選択図】 図1d
Description
12 窒化物単結晶薄膜
12a 半極性窒化物単結晶基底層
12b 半極性窒化物単結晶薄膜
13 絶縁性物質パターン層
14 第1窒化物半導体層
15 活性層
16 第2窒化物半導体層
17 第1電極
18 第2電極
Claims (25)
- m面六方晶系単結晶基板上に半極性窒化物単結晶基底層を形成する段階と、
前記半極性窒化物単結晶基底層上に絶縁性物質パターン層を形成する段階と、
前記絶縁性物質パターン層が形成された前記半極性窒化物単結晶基底層上に半極性窒化物単結晶薄膜を側方向成長させる段階と、
を含み、
前記半極性窒化物単結晶薄膜を側方向成長させる段階は、
前記半極性窒化物単結晶基底層上に成長面の一部がa面を有するよう前記半極性窒化物単結晶薄膜を1次側方向成長させる段階と、
前記1次側方向成長させられた窒化物単結晶薄膜が合体して(11−22)面を有する前記半極性窒化物単結晶薄膜が形成されるよう2次側方向成長させる段階と、
を含むことを特徴とする窒化物単結晶薄膜の成長方法。 - 前記絶縁性物質パターン層を形成する段階は、
前記半極性窒化物単結晶基底層上に絶縁物質を成長させる段階と、
前記絶縁物質を所定の間隔で蝕刻して(1−100)面の成長方向にストライプ状のパターンを有する前記絶縁性物質パターン層を形成する段階と、
を含むことを特徴とする請求項1に記載の窒化物単結晶薄膜の成長方法。 - 前記ストライプ状のパターンは、2〜30μmの幅を有するよう形成されることを特徴とする請求項2に記載の窒化物単結晶薄膜の成長方法。
- 前記絶縁物質は、SiO2及びSiNのいずれか一つの物質であることを特徴とする請求項2に記載の窒化物単結晶薄膜の成長方法。
- 前記絶縁性物質パターン層は、1000〜4000Åの厚さで形成されることを特徴とする請求項2に記載の窒化物単結晶薄膜の成長方法。
- 前記半極性窒化物単結晶薄膜を1次側方向成長させる段階は、
第1の成長圧力を利用して第1の側面成長速度で前記半極性窒化物単結晶薄膜を1次側方向成長させ、
前記半極性窒化物単結晶薄膜を2次側方向成長させる段階は、
前記第1の成長圧力より大きい第2の成長圧力を利用して第2の側面成長速度で前記半極性窒化物単結晶薄膜を2次側方向成長させることを特徴とする請求項1に記載の窒化物単結晶薄膜の成長方法。 - 前記第1の成長圧力は30〜100Torrの範囲の圧力であって、
前記第2の成長圧力は150〜300Torrの範囲の圧力であることを特徴とする請求項6に記載の窒化物単結晶薄膜の成長方法。 - 前記半極性窒化物単結晶薄膜を1次側方向成長させる段階は、
第1の成長温度を利用して、第1の側面成長速度で前記半極性窒化物単結晶薄膜を1次側方向成長させ、
前記半極性窒化物単結晶薄膜を2次側方向成長させる段階は、
前記第1の成長温度より大きい第2の成長温度を利用して、第2の側面成長速度で前記半極性窒化物単結晶薄膜を2次側方向成長させることを特徴とする請求項1に記載の窒化物単結晶薄膜の成長方法。 - 前記第1の成長温度は900〜1030℃の範囲の温度であって、
前記第2の成長温度は1030〜1150℃の範囲の温度であることを特徴とする請求項8に記載の窒化物単結晶薄膜の成長方法。 - 前記半極性窒化物単結晶薄膜を1次側方向成長させる段階は、
第1のIII/V族の比を利用して、第1の側面成長速度で前記半極性窒化物単結晶薄膜を1次側方向成長させ、
前記半極性窒化物単結晶薄膜を2次側方向成長させる段階は、
前記第1のIII/V族の比より小さい第2のIII/V族の比を利用して、第2の側面成長速度で前記半極性窒化物単結晶薄膜を2次側方向成長させることを特徴とする請求項1に記載の窒化物単結晶薄膜の成長方法。 - 前記第1の側面成長速度は2.0〜3.0μm/hrの範囲であって、
前記第2の側面成長速度は0.5〜2.0μm/hrの範囲であることを特徴とする請求項6〜10のいずれか1項に記載の窒化物単結晶薄膜の成長方法。 - 前記半極性窒化物単結晶薄膜を側方向成長させる段階は、
ELOG成長方法及びPENDEO成長方法のいずれか一つを利用することを特徴とする請求項1に記載の窒化物単結晶薄膜の成長方法。 - m面六方晶系単結晶基板上に半極性窒化物単結晶基底層を形成する段階と、
前記半極性窒化物単結晶基底層上に絶縁性物質パターン層を形成する段階と、
前記絶縁性物質パターン層が形成された前記半極性窒化物単結晶基底層上に半極性窒化物単結晶薄膜を側方向成長させる段階と、
前記半極性窒化物単結晶薄膜上に第1の窒化物半導体層、活性層及び第2の窒化物半導体層を含む発光構造物を形成する段階と、
を含み、
前記半極性窒化物単結晶薄膜を側方向成長させる段階は、
前記半極性窒化物単結晶基底層上に成長面の一部がa面を有するよう前記半極性窒化物単結晶薄膜を1次側方向成長させる段階と、
前記1次側方向成長させられた窒化物単結晶薄膜が合体して(11−22)面を有する半極性窒化物単結晶薄膜が形成されるよう2次側方向成長させる段階と、を含むことを特徴とする窒化物半導体発光素子の製造方法。 - 前記絶縁性物質パターン層を形成する段階は、
前記半極性窒化物単結晶基底層上に絶縁物質を成長させる段階と、
前記絶縁物質を所定の間隔で蝕刻して(1−100)面の成長方向にストライプ状のパターンを有する前記絶縁性物質パターン層を形成する段階と、
を含むことを特徴とする請求項13に記載の窒化物半導体発光素子の製造方法。 - 前記ストライプ状のパターンは、2〜30μmの幅を有するよう形成されることを特徴とする請求項14に記載の窒化物半導体発光素子の製造方法。
- 前記絶縁物質は、SiO2及びSiNのいずれか一つの物質であることを特徴とする請求項14に記載の窒化物半導体発光素子の製造方法。
- 前記絶縁性物質パターン層は、1000〜4000Åの厚さで形成されることを特徴とする請求項14に記載の窒化物半導体発光素子の製造方法。
- 前記半極性窒化物単結晶薄膜を1次側方向成長させる段階は、
第1の成長圧力を利用して第1の側面成長速度で前記半極性窒化物単結晶薄膜を1次側方向成長させ、
前記半極性窒化物単結晶薄膜を2次側方向成長させる段階は、
前記第1の成長圧力より大きい第2の成長圧力を利用して第2の側面成長速度で前記半極性窒化物単結晶薄膜を2次側方向成長させることを特徴とする請求項13に記載の窒化物半導体発光素子の製造方法。 - 前記第1の成長圧力は30〜100Torrの範囲内の圧力であって、
前記第2の成長圧力は150〜300Torrの範囲内の圧力であることを特徴とする請求項18に記載の窒化物半導体発光素子の製造方法。 - 前記半極性窒化物単結晶薄膜を1次側方向成長させる段階は、
第1の成長温度を利用して第1の側面成長速度で前記半極性窒化物単結晶薄膜を1次側方向成長させ、
前記半極性窒化物単結晶薄膜を2次側方向成長させる段階は、
前記第1の成長温度より高い第2の成長温度を利用して第2の側面成長速度で前記半極性窒化物単結晶薄膜を2次側方向成長させることを特徴とする請求項13に記載の窒化物半導体発光素子の製造方法。 - 前記第1の成長温度は900〜1030℃の範囲の温度であって、
前記第2の成長温度は1030〜1150℃の範囲の温度であることを特徴とする請求項20に記載の窒化物半導体発光素子の製造方法。 - 前記半極性窒化物単結晶薄膜を1次側方向成長させる段階は、
第1のIII/V族の比を利用して第1の側面成長速度で前記半極性窒化物単結晶薄膜を1次側方向成長させ、
前記半極性窒化物単結晶薄膜を2次側方向成長させる段階は、
前記第1のIII/V族の比より小さい第2のIII/V族の比を利用して第2の側面成長速度で前記半極性窒化物単結晶薄膜を2次側方向成長させることを特徴とする請求項13に記載の窒化物半導体発光素子の製造方法。 - 前記第1の側面成長速度は2.0〜3.0μm/hrの範囲内で、
前記第2の側面成長速度は0.5〜2.0μm/hrの範囲内であることを特徴とする請求項18〜22のいずれか1項に記載の窒化物半導体発光素子の製造方法。 - 前記半極性窒化物単結晶薄膜を側方向成長させる段階は、
ELOG成長方法及びPENDEO成長方法のいずれか一つを利用することを特徴とする請求項13に記載の窒化物半導体発光素子の製造方法。 - 前記発光構造物の一部を蝕刻して前記第1の窒化物半導体層を露出させる段階と、
前記第1窒化物半導体層が露出された位置に第1電極を形成し、前記第2窒化物半導体層上に第2電極を形成する段階と、
をさらに含むことを特徴とする請求項13に記載の窒化物半導体発光素子の製造方法。
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