JP2009147056A5 - - Google Patents
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- Publication number
- JP2009147056A5 JP2009147056A5 JP2007321779A JP2007321779A JP2009147056A5 JP 2009147056 A5 JP2009147056 A5 JP 2009147056A5 JP 2007321779 A JP2007321779 A JP 2007321779A JP 2007321779 A JP2007321779 A JP 2007321779A JP 2009147056 A5 JP2009147056 A5 JP 2009147056A5
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- semiconductor layer
- forming
- semiconductor
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 28
- 239000000758 substrate Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000000969 carrier Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007321779A JP2009147056A (ja) | 2007-12-13 | 2007-12-13 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007321779A JP2009147056A (ja) | 2007-12-13 | 2007-12-13 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009147056A JP2009147056A (ja) | 2009-07-02 |
JP2009147056A5 true JP2009147056A5 (fr) | 2010-07-08 |
Family
ID=40917347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007321779A Withdrawn JP2009147056A (ja) | 2007-12-13 | 2007-12-13 | 半導体装置及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2009147056A (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011099343A1 (fr) * | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteur et procédé de commande associé |
DE102013110695A1 (de) | 2012-10-02 | 2014-04-03 | Samsung Electronics Co., Ltd. | Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben |
KR20140047494A (ko) | 2012-10-12 | 2014-04-22 | 삼성전자주식회사 | 서브픽셀, 이를 포함하는 이미지 센서, 및 이미지 센싱 시스템 |
JP2015023192A (ja) * | 2013-07-19 | 2015-02-02 | 日本放送協会 | 固体撮像素子 |
JP2015162604A (ja) * | 2014-02-27 | 2015-09-07 | 株式会社東芝 | Cmosイメージセンサ |
JP6892577B2 (ja) | 2017-04-28 | 2021-06-23 | 天馬微電子有限公司 | イメージセンサ及びセンサ装置 |
CN111063702B (zh) * | 2019-11-13 | 2022-10-04 | 北京大学 | 一种utbb光电探测器像素单元、阵列和方法 |
-
2007
- 2007-12-13 JP JP2007321779A patent/JP2009147056A/ja not_active Withdrawn
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