JP2009135485A - Semiconductor light-emitting apparatus and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting apparatus of low cost which requires no package. <P>SOLUTION: The semiconductor light-emitting apparatus 100 includes: a wiring board 1 provided with a supporting body and a wiring; and a plurality of light-emitting portions 2. The light-emitting part 2 is constituted of one or more semiconductor light-emitting devices 21 arranged on the wiring board 1, an insulating gate 22 formed on the wiring board 1 so as to surround the semiconductor light-emitting devices 21, and a sealing part 23 which is formed in a region surrounded by the gate 22 on the wiring board 1 to seal the semiconductor light-emitting devices 21. The height of the gate 22 from the wiring board 1 is made almost equal to or higher than that of the sealing part 23 from the wiring board 1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a method for manufacturing the same.

  Conventionally, a surface mount device (SMD) is known as one of the constituent types of a semiconductor light emitting device including a semiconductor light emitting element. This SMD type semiconductor light emitting device is constructed by preparing a package including a semiconductor light emitting element and placing the package on a wiring board, and has advantages from the viewpoint of miniaturization and thinning. It was said.

  However, the SMD type semiconductor light emitting device has a problem that the mounting of the package (that is, the process of installing the package on the wiring board) is complicated, and the package is expensive. Therefore, a type (so-called chip-on-board type) in which a semiconductor light emitting element is directly mounted on a wiring board without using a package has been proposed (Patent Document 1).

  On the other hand, an SMD type semiconductor light emitting device having a resin body surrounding a semiconductor light emitting element has also been proposed (Patent Document 2).

JP 2003-152225 A JP 2006-324589 A

However, in the technique described in Patent Document 1, the semiconductor light emitting element is sealed with a sealing material. At this time, if a sealing material excellent in shape retention is not selected, the sealing material flows out to other components. There was an effect.
Further, the technique described in Patent Document 2 requires control of the viscosity and thixotropy of the resin body and the sealing material surrounding the semiconductor light-emitting element, and it is still difficult to control the physical properties of the resin body and the sealing material, which is practically used. Had problems.
Furthermore, in the techniques described in Patent Documents 1 and 2, since the sealing material and the resin body have high viscosities and it is difficult to achieve both leveling properties and shape, operations such as potting are complicated, and the sealing material and the resin body It was difficult to control. Further, in the techniques described in Patent Documents 1 and 2, the lens surface may be non-uniform, and individual variations are large.

  The present invention has been made in view of the above problems, and an object thereof is to provide an inexpensive semiconductor light emitting device that does not require a package and a manufacturing method thereof.

  As a result of intensive studies to solve the above problems, the present inventor has found that a semiconductor light emitting device in which a semiconductor light emitting element is directly mounted on a wiring board can be manufactured at low cost by providing a weir so as to surround the periphery of the semiconductor light emitting element. The present invention has been completed.

  That is, the gist of the present invention is a semiconductor light emitting device having a wiring board having a support and wiring, and a plurality of light emitting parts, wherein the light emitting part is one or more semiconductors disposed on the wiring board. A light emitting element; an insulating weir formed on the wiring substrate so as to surround the semiconductor light emitting element; and a seal formed on a region surrounded by the weir on the wiring substrate for sealing the semiconductor light emitting element. The semiconductor light emitting device is characterized in that the height of the weir from the substrate is substantially equal to or higher than the height of the sealing portion from the substrate.

  At this time, it is preferable that the thermal conductivity of the support of the wiring board is 5 W / m · K or more.

The support of the wiring _{substrate, AlN, Al 2 O 3,} Si 3 N 4, is preferably made of any one or more of Cu and Al (claim 3).

  Furthermore, it is preferable that the semiconductor light emitting element is installed so that a light emitting surface thereof faces the wiring substrate.

  Moreover, it is preferable that the said weir does not have a ridgeline (Claim 5).

  Another gist of the present invention is a method for manufacturing a semiconductor light emitting device according to the present invention, comprising the step of providing the weir on the wiring substrate and the step of coating the sealing portion on the substrate. The present invention resides in a method for manufacturing a semiconductor light-emitting device.

  At this time, in the step of providing the weir, the means for providing the weir is preferably one or more of a pre-molded mounting of the weir, a drawing method using a dispenser, a screen printing method, and a resist method. 7).

  Still another subject matter of the present invention is a semiconductor light emitting device having a wiring board having a support and wiring and a plurality of light emitting parts, wherein the light emitting part is one or more arranged on the wiring board. A semiconductor light emitting element; an insulating weir formed on the wiring substrate so as to surround the semiconductor light emitting element; and a semiconductor light emitting element formed on a region surrounded by the weir on the wiring substrate. A semiconductor light emitting device comprising: a sealing portion, wherein the wiring substrate support has a thermal conductivity of 5 W / m · K or more.

  Furthermore, in the semiconductor light emitting device of the present invention described above, it is preferable that the support for the wiring board is formed of a base metal and an insulating layer is provided between the base metal and the wiring.

  Moreover, it is preferable that the wiring of a wiring board is coat | covered with the white coating layer (Claim 10).

  Furthermore, it is preferable that the said insulating layer and / or the said white coating layer contain polyetheretherketone resin (Claim 11).

  According to the present invention, an inexpensive semiconductor light emitting device that does not require a package can be provided.

  Hereinafter, the present invention will be described with reference to embodiments. However, the present invention is not limited to the following embodiments, and can be arbitrarily modified and implemented without departing from the scope of the present invention.

Embodiment
1 to 3 illustrate a semiconductor light emitting device 100 according to an embodiment of the present invention. FIG. 1 is a plan view schematically showing the semiconductor light emitting device, and FIG. FIG. 3 is a cross-sectional view schematically showing one longitudinal section of a light emitting portion of the semiconductor light emitting device.

  As shown in FIG. 1, the semiconductor light emitting device 100 of the present embodiment includes a wiring board 1 and a plurality (four in the present embodiment) of light emitting units 2. As shown in FIGS. 2 and 3, the light emitting unit 2 is formed so as to surround one or more semiconductor light emitting elements 21 disposed on the wiring substrate 1 and the semiconductor light emitting elements 21 on the wiring substrate 1. The insulating dam 22 and a sealing portion 23 that is formed in a region surrounded by the dam 22 on the wiring substrate 1 and seals the semiconductor light emitting element 21 are configured.

(1. Wiring board)
As shown in FIGS. 1 to 3, the wiring board 1 is a board that supports the semiconductor light emitting device 100 and includes wiring (not shown) for supplying power to the semiconductor light emitting element 21 on the surface layer of the support. In the present embodiment, a printed wiring board having wiring printed on the surface of a flat support is used as the wiring board 1, and power is supplied from external power (not shown) (described later). 4, 5). In this embodiment, since the semiconductor light emitting element 21 is directly provided on one side of the wiring substrate 1, the wiring may be provided only on the one side. It is preferable to install the wiring only on one side in this way, which is advantageous in terms of cost as compared with the SMD type semiconductor light emitting device that normally requires wiring on both sides of the wiring board. However, the shape of the wiring board 1, wiring installation means, and the like can be arbitrarily set according to the application of the semiconductor light emitting device 100.

  The support of the wiring board 1 has a thermal conductivity of usually 5 W / m · K or more, preferably 30 W / m · K or more, more preferably 100 W / m · K or more. By setting the thermal conductivity of the support of the wiring board 1 high as described above, the heat generated from the semiconductor light emitting element 21 can be efficiently radiated to the outside. In particular, in the semiconductor light emitting device 100 of this embodiment, since there is no need to provide wiring on the back surface of the wiring substrate 1, a direct heat sink in which a heat sink is directly provided on the back surface of the wiring substrate 1 is possible, and a package is interposed as in the conventional case. Compared with the case where it was doing, the outstanding heat dissipation is obtained. At this time, the heat sink and the wiring board 1 may be integrated. In addition, when the light emitting unit 2 includes a phosphor (described later), the phosphor generally has a tendency to change in luminance due to a temperature change, and thus the above-described good heat dissipation is a great advantage. The thermal conductivity can be measured by, for example, a laser flash method.

From the viewpoint of increasing the thermal conductivity of the support of the wiring board 1 as described above, the support of the wiring board 1 is preferably formed of a material having a high thermal conductivity, and specific examples include AlN and Al _2. It is preferably composed of one or more of O ₃ , Si ₃ N ₄ , Cu and Al. Note that the material for forming the support of the wiring board 1 may be only one kind or two or more kinds. Furthermore, it does not necessarily have to be formed of only a material having a high thermal conductivity. For example, various materials such as coating and wiring formation with another material on the substrate surface formed of the material having a high thermal conductivity. It is also possible to configure by combining.

  It is preferable that the upper surface of the wiring board 1 is covered with a material having a high reflectance with respect to light emission of the light emitting unit 2 formed on or in the vicinity thereof. For this reason, if the surface layer of the electrode part (not shown) exposed on the upper surface of the wiring substrate 1 is made of, for example, silver or aluminum, it is preferable because it has a high reflectance over a wide wavelength range.

If necessary, the wiring can be protected by providing a white coating layer (see FIGS. 4 and 5 described later) on the exposed wiring that is not sealed. This white coating layer is also preferably formed of a highly reflective material such as a white solder resist or white ceramic. As the white solder resist, for example, a high reflectance white developing type solder resist “PSR-4000” manufactured by Taiyo Ink Manufacturing Co., Ltd. can be suitably used.
As the white coating layer, a polyetheretherketone (hereinafter abbreviated as “PEEK” as appropriate) resin can be suitably used. Furthermore, when a white PEEK resin containing a white filler is used, the light from the semiconductor light emitting element 21 is efficiently reflected, so that a high-luminance semiconductor light emitting device can be provided.
Preferable examples of the PEEK resin include “Victrex PEEK” (registered trademark) manufactured by Victrex, and “IBUKI” (registered trademark) manufactured by Mitsubishi Plastics as the PEEK resin film and the single-sided copper-clad PEEK resin film. It is done.
On the other hand, as the white filler, silica, barium titanate, titanium oxide, zirconium oxide, aluminum oxide and the like can be suitably used.

In the semiconductor light emitting device of the present invention, when the support of the wiring substrate 1 is formed of a base metal such as Cu and Al, an insulating layer is provided between the base metal forming the support and the wiring. It is preferable (see FIG. 4).
The insulating layer can be formed of a resin. Various resins can be used as the insulating layer resin. For example, when the light emitting unit 2 described later emits a large amount of heat, the insulating layer resin has a melting point of usually 300 ° C. or higher, preferably 315 ° C. or higher. Is preferably a thermoplastic resin having a temperature of 320 ° C. or higher. Thus, the heat resistance of the semiconductor light emitting device 100 can be improved by including the thermoplastic resin having a high melting point in the insulating layer. As a specific example, when an insulating layer is formed of a resin having a relatively low melting point such as an epoxy resin, thermal deterioration such as discoloration, cracking, peeling, deformation shrinkage may occur remarkably. However, if a resin having a high melting point is used as the insulating layer resin, the heat resistance can be improved and the above-described thermal deterioration can be suppressed.
Further, for example, when the wiring board 1 is provided for the reflow process, the thermoplastic resin preferably has reflow resistance, and the thermal decomposition temperature is usually 200 ° C. or higher, preferably 250 ° C. or higher, more preferably 280 ° C. or higher. preferable. In particular, a temperature of 300 ° C. or higher is particularly preferable because the difference between the thermal decomposition temperature and the melting point is small from the viewpoint of a high melting point resin.
The resin may be used alone, but for the purpose of improving heat resistance, flame retardancy, and mechanical properties, for example, a polymer alloy or one reinforced with an inorganic filler such as glass fiber. Also good.

  An example of a resin suitable for the insulating layer is PEEK resin. PEEK resin is an aromatic resin having particularly high heat resistance as a thermoplastic resin that can be injection-molded, and has a melting point of 334 ° C., and can be used continuously even at 250 ° C. The PEEK resin is also preferable in that the resin that forms the insulating layer is less deteriorated when the semiconductor light emitting element 21 is joined to the wiring substrate 1 with lead-free solder such as Au—Sn eutectic solder.

Since PEEK resin is excellent in mechanical strength, toughness and moldability, for example, in addition to various general illuminations, resin for insulating layers for wiring boards constituting light sources for portable devices and in-vehicle lighting and display devices Can be preferably used. Among these, when a white PEEK resin containing a white filler is used, the light of the semiconductor light emitting element 21 is efficiently reflected, so that a high-luminance semiconductor light emitting device can be provided.
Preferable examples of the PEEK resin include “Victrex PEEK” (registered trademark) manufactured by Victrex, and “IBUKI” (registered trademark) manufactured by Mitsubishi Plastics as the PEEK resin film and the single-sided copper-clad PEEK resin film. It is done.

  In addition, since the light emitting section 2 to be described later usually emits a lot of heat and light, it is more preferable that the material forming the insulating layer has high thermal conductivity (high heat dissipation) and ultraviolet light resistance. As an example of such a material, for example, a highly heat-dissipating resin-based insulating material in which a high thermal conductive filler is dispersed at a high density can be mentioned. Examples of the high thermal conductive filler include inorganic oxide particles such as silica, barium titanate, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, cerium oxide, yttrium oxide, and diamond particles, depending on the purpose. Other materials can be selected, but are not limited to these. In addition, a high heat conductive filler may use one type, and may use two or more types together by arbitrary combinations and arbitrary ratios.

  Alternatively, when the light emission wavelength of the semiconductor light emitting device 21 is in the near ultraviolet to ultraviolet region, or when the light output is large using a large number of semiconductor light emitting devices 21, the resin for the white coating layer or the resin for the insulating layer is used. There is a possibility that the ultraviolet light resistance may be insufficient, but the surface of the white coating layer resin or insulating layer resin further contains an inorganic white pigment (the white filler) having high concealability and reflection efficiency. By using a resin-based insulating material coated with a coating material, it is expected that the white coating layer resin or insulating layer resin can be inhibited from photodegradation, and can be made into an insulating layer that is free of coloring and cracking even during long-term use. Is done.

  Further, in the laminated structure of the wiring board 1, wiring may be installed only on one side of the wiring board 1. In this case, a single-sided circuit laminated structure or a single-sided multilayer circuit laminated structure by prepreg may be used.

If the example of the structure of the wiring board 1 along the said description is given, the structure as shown in FIG.4 and FIG.5 will be mentioned. 4 is a cross-sectional view schematically showing an example of the configuration of a so-called metal-based wiring board, and FIG. 5 is a cross-sectional view schematically showing an example of the configuration of a so-called ceramic-based wiring board. In FIG. 4, the wiring board 1 is provided with an insulating layer having high heat dissipation on the surface of a support made of a base metal such as Al and Cu, and a metal layer such as Cu, Ag, Al or the like on the surface layer of this insulating layer, or The wiring is formed by a printed layer obtained by printing a conductive material such as a metal in ink. The wiring material is preferably Cu from the viewpoint of being excellent in heat and electrical conductivity and being inexpensive. Further, in FIG. 5, the wiring board 1 is formed by forming a metal layer such as Cu, Ag, or Al on the surface layer of a support made of ceramics such as AlN or Al ₂ O ₃ or a conductor material such as the aforementioned metal or tungsten. The wiring is formed by the printed printing layer. 4 and 5, the surface of the wiring is protected by a white coating layer having a white color or a color close to white. In FIG. 5, the white coating layer may be formed of ceramics such as AlN or Al ₂ O ₃ constituting the wiring board 1, or may be formed of white PEEK resin containing a white filler. 4 and 5, the exposed wiring surface may be plated with Ag or an Ag-containing alloy for the purpose of improving the reflectance. Further, for the purpose of improving the electrode migration resistance and the purpose of improving the adhesiveness with the solder, the exposed wiring surface may be entirely or partially plated with gold.

(2. Light emitting part)
The light emitting part 2 is provided on the wiring board 1 as shown in FIGS. The light emitting unit 2 includes a semiconductor light emitting element 21, a weir 22, and a sealing unit 23.

(2-1. Semiconductor light emitting device)
The semiconductor light emitting element 21 is disposed on the wiring substrate 1 as shown in FIGS. At this time, as shown in FIG. 3, the semiconductor light emitting element 21 is directly placed on the wiring substrate 1 without performing the submount by the package as in the SMD type semiconductor light emitting device.

As the semiconductor light emitting element 21, a light emitting diode (hereinafter referred to as “LED” as appropriate), a laser diode (hereinafter referred to as “LD” as appropriate) or the like can be used. Among these, GaN-based LEDs and LDs using GaN-based compound semiconductors are preferable as the semiconductor light emitting element 21. This is because GaN-based LEDs and LDs have remarkably large light output and external quantum efficiency compared to SiC LEDs that emit light in this region, and when combined with phosphors, they can emit very bright light with very low power. Because it is. For example, for a current load of 20 mA, GaN LEDs and LDs usually have a light emission intensity that is 100 times or more that of SiC. In the GaN-based LED and LD, those having an Al _X Ga _Y N light emitting layer, a GaN light emitting layer, or an In _X Ga _Y N light emitting layer are preferable. Among the GaN-based LEDs, those having an In _X Ga _Y N light-emitting layer are particularly preferable because the emission intensity is very strong, and in the GaN-based LD, a multiple quantum well structure of an In _X Ga _Y N layer and a GaN layer. Are particularly preferred because of their very high emission intensity.
In the above, the value of X + Y is usually a value in the range of 0.8 to 1.2. In the GaN-based LED, those in which the light emitting layer is doped with Zn or Si or those without a dopant are preferable for adjusting the light emission characteristics.
A GaN-based LED has these light-emitting layer, p-layer, n-layer, electrode, and substrate as basic components, and the light-emitting layer is made of n-type and p-type Al _X Ga _Y N layers, GaN layers, or In _X Those having a heterostructure sandwiched between Ga _Y N layers and the like are preferably high in luminous efficiency, and those having a heterostructure in a quantum well structure are further preferable because of high luminous efficiency.

  In the present invention, a semiconductor light emitting device having an emission wavelength from the near ultraviolet region to the blue region is usually used. Specifically, a semiconductor light emitting device having a peak emission wavelength of usually 300 nm or more, preferably 330 nm or more, more preferably 350 nm or more, and usually 480 nm or less is used. If the wavelength is too short, light having an emission wavelength may be absorbed by the sealing portion 23 and a high-luminance semiconductor light-emitting device may not be obtained, and may cause thermal deterioration of the semiconductor light-emitting device due to heat generation. . If the wavelength is too long, wavelength conversion using a phosphor cannot be performed, and white light useful for illumination may not be obtained.

The semiconductor light emitting element 21 is preferably arranged by a so-called flip chip. This is because if the semiconductor light emitting element 21 is connected by flip chip, the heat generated from the semiconductor light emitting element 21 can be efficiently radiated.
In addition, since the conventional technology uses a high-viscosity sealing material, when the semiconductor light emitting device 21 is arranged by flip chip, the sealing material is placed in the gap between the wiring board and the semiconductor light emitting device. In some cases, it could not be filled sufficiently. However, in this embodiment, since a low-viscosity sealing material can be used, sufficient sealing is possible even for gaps, and a flip chip can be satisfactorily applied.

Here, the flip chip means that the circuit surface of the semiconductor light emitting element 21 (chip) is placed in a direction facing the wiring board 1, and the semiconductor light emitting element 21 and the wiring board 1 are made of a conductive material provided between them. This is a technology for electrically connecting the bumps 24. In the semiconductor light emitting element 21, when a flip chip is applied, the semiconductor light emitting element 21 comes to face the light emitting surface of the wiring substrate 1. In this case, the light emitted from the semiconductor light emitting element 21 is emitted from the lower surface and side surface of the semiconductor light emitting element 21 in FIG. 3, and is normally emitted after being reflected from the surface of the wiring board 1. It has become. Further, when the semiconductor light emitting element 21 is transparent, the light may be emitted outside through the semiconductor light emitting element 21 in addition to being reflected by the wiring board 1.
Also in this embodiment, as shown in FIG. 3, it is assumed that the semiconductor light emitting element 21 is installed by flip chip, and its light emitting surface is opposed to the wiring substrate 1.

Further, one semiconductor light emitting element 21 may be provided for each light emitting unit 2, or two or more semiconductor light emitting elements 21 may be provided. Especially, the process which provides the weir 22 or can perform sealing can be simplified, and the dispersion | variation in a brightness | luminance and light emission wavelength can be averaged between different light emission parts 2 by using a several semiconductor light-emitting device. In view of this, it is preferable to provide two or more semiconductor light emitting elements 21 in one light emitting portion 2. In the present embodiment, an example in which nine semiconductor light emitting elements 21 are provided for one light emitting unit 2 is shown.
Further, the installation position of the semiconductor light emitting element 21 is not particularly limited as long as it is inside the weir 22 to be described later. Usually, the light emitted from the light emitting section 2 is symmetrical from the viewpoint of preventing variation in the lens effect. It is preferable to install it at a position having the property.

(2-2. Weir)
The weir 22 is formed on the wiring substrate 1 as shown in FIGS. 1 to 3 and is formed so as to surround the semiconductor light emitting element 21. When the light emitting unit 2 is formed, a sealing unit 23 described later is formed so as to be dammed up by the weir 22. Accordingly, the size, shape, position, etc. of the sealing portion 23 are set according to the size, shape, position, etc. where the weir 22 is formed, thereby determining the position, size, design, etc. of the light emitting portion 2. become.

There is no particular limitation on the shape of the weir 22. However, the cross-sectional shape is usually formed as a convex member extending on the surface of the wiring board 1. At this time, the weir 22 may have a ridge line, but is preferably formed in a shape having no ridge line. Here, the ridge line refers to a corner formed continuously on the surface of the weir 22 in the longitudinal direction. Therefore, the shape having no ridge line refers to a shape in which the cross section has no corners when the weir 22 is cut by a plane intersecting the longitudinal direction. Therefore, for example, the weir 22 is preferably formed as a member having a substantially semicircular cross section (so-called kamaboko shape) whose surface is formed only by a curved surface as shown in FIG. This is because if the surface of the weir 22 is formed only with a smooth convex curved surface, the light extraction effect in the weir 22 is superior to the case where the surface is formed in a polygonal cross section. This is because the surface of the weir 22 is formed with a smooth surface, and when the light guided in the sealing portion 23 hits the weir 22 and is reflected, the upper end of the contact portion between the weir 22 and the sealing portion 23 is reflected. Thus, it is possible to take out continuous and smooth light from the bonding surface to the wiring substrate 1 and the like, and to eliminate hot spots when the semiconductor light emitting device 100 is used as an illumination light source. Furthermore, although the weir 22 is normally configured so as to hardly capture light from the sealing portion 23, when the weir 22 is transparent or the concentration of the light scattering agent is low, the weir 22 is closed from the sealing portion 23 to the weir 22. Light may leak into 22 slightly. In this case, the light guided in the weir 22 leaks from the ridge line portion of the weir 22 and the ridge line portion of the weir 22 shines. Therefore, from this point, the weir 22 has a structure having no ridge line. Is preferred.
On the other hand, the planar shape of the weir 22 is usually formed so that the weir 22 surrounds the semiconductor light emitting element 21 without contacting the semiconductor light emitting element 21. An example of a specific shape is usually circular as shown in FIGS. 1 and 2, but may be elliptical or polygonal.

The dimensions of the weir 22 can be arbitrarily set according to the design of the light emitting unit 2. However, among them the height of the weir 22 (see the height _{H 1} of FIG. 3), typically 300μm or greater, preferably 400μm or more, more preferably 500μm or more, and usually 5 mm, preferably 2mm or less, more preferably 1 mm or less. If the weir 22 is too low, there is a tendency that the semiconductor light emitting element 21 cannot be sufficiently sealed. If it is too high, the mechanical strength is insufficient, or light is shielded by the weir 22 and the light extraction efficiency tends to decrease. There is.

  The width of the weir 22 (see width W in FIG. 3) is usually 200 μm or more, preferably 300 μm or more, more preferably 400 μm or more, and usually 2 mm or less, preferably 1.5 mm or less, more preferably 1 mm or less. It is. If the width of the weir 22 is too narrow, the mechanical strength may be insufficient, and if it is too wide, it may be wasted.

  The weir 22 is formed as an insulating member. This is because if the weir 22 is formed as a conductive member, a short circuit may occur with the wiring formed on the wiring board 1.

  Although there is no restriction | limiting in the color of the weir 22, Usually, it forms in transparent or white. This is to increase the light reflection efficiency on the surface of the weir 22 and to extract light efficiently.

  The weir 22 preferably contains a light scattering agent. By forming the weir 22 with a material containing a light scattering agent, light emitted from the semiconductor light emitting element 21 in the direction in which the weir 22 exists is scattered and reflected by the weir 22. Light emission in a direction parallel to or near parallel to the substrate 1 can be suppressed, and light extraction efficiency from the semiconductor light emitting element 21 in a direction perpendicular to the wiring substrate 1 can be increased.

In the semiconductor light emitting device 100, the weir 22 preferably has a higher refractive index than the sealing portion 23. By using the weir 22 having a higher refractive index than that of the sealing portion 23, light emitted from the semiconductor light emitting device 100 in the direction in which the weir 22 exists is reflected by the weir 22. In addition, it is possible to suppress the emission of light in a direction parallel to or close to parallel to the semiconductor substrate, and to improve the light extraction efficiency from the semiconductor light emitting element 21 in a direction perpendicular to or substantially perpendicular to the wiring substrate 1.
Furthermore, from the viewpoint of increasing the reflection efficiency on the surface of the weir 22, it is preferable that the difference in refractive index between the weir 22 and the sealing portion 23 is large.

  Preferred examples of the material of the weir 22 include a resin or ceramic from the viewpoint of insulating properties. Among them, the resin is used from the viewpoint of low moisture permeability, light transmission or blocking characteristics, and adhesion to the wiring board 1. preferable. Preferred examples of the resins include epoxy resins, urethane resins, polyimide resins, acrylic resins, and silicone resins. In addition, from the viewpoint of adhesion to the wiring substrate 1 and the sealing portion 23, an epoxy resin, an acrylic resin, and a silicone resin are particularly preferable. Among these, an epoxy resin and a silicone resin are preferable because they are transparent. In addition, the material of the weir 22 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

  In particular, when the weir 22 is formed by means such as coating, the material of the weir 22 is preferably a fluid material that is cured by applying some kind of curing treatment (curable material). Materials that do not cure but cure during the curing operation are preferred. From this viewpoint, the curable material is preferably a thermosetting resin, a photocurable resin, or the like. Among these, among the thermosetting resins, those that cure at the lowest possible temperature are preferable because they are less affected by the alteration of the wiring substrate 1 and the semiconductor light emitting element 21.

Although there is no restriction | limiting in the cure rate of a curable material, it is so preferable that it is quick. It is because it is excellent in the shape retention characteristic and productivity at the time of application | coating. Specifically, those that cure within 10 hours, particularly within 5 hours, particularly within 3 hours are preferred.
Some curable materials once have a viscosity that decreases during curing. However, from the viewpoint of preventing the shape retention characteristics from deteriorating, it is preferable to suppress the above-described decrease in viscosity. In order to achieve this, it is effective to improve the properties of the curable material such as polarity and viscosity, and to utilize inorganic particles that add thixotropy.

  As an example of a curable material, the thing similar to what is demonstrated later as a material (sealing material) of the sealing part 23 can be mentioned. However, since the weir 22 and the sealing portion 23 preferably contain a light scattering agent and have a difference in refractive index as described above, the material of the weir 22 is appropriate in relation to the sealing portion 23. Is preferably selected.

The weir 22 may be formed using a thermoplastic resin. In this case, the thermoplastic resin is preferably a resin having excellent heat resistance, high reflectance, toughness, and excellent mechanical strength and workability. Specific examples thereof include nylon resins such as polyphthalamide (PPA), liquid crystal polymers such as aromatic polyesters, and PEEK resins. Among them, polyphthalamide resin and PEEK resin having a high melting point and high heat resistance are preferable, and PEEK resin is particularly preferable. Preferable examples of the PEEK resin include “Victrex PEEK” (registered trademark) manufactured by Victrex, and “IBUKI” (registered trademark) manufactured by Mitsubishi Plastics as the PEEK resin film and the single-sided copper-clad PEEK resin film. It is done.
The weir 22 formed of the thermoplastic resin may have a ridge line as in the case of using the thermosetting resin, but it is preferable to have a shape having no ridge line for the above-described reason.

  Moreover, as long as the effect of this invention is not impaired remarkably, other components can also be mixed and used for said weir 22 in the said resin. In addition, only 1 type may be used for another component and it may use 2 or more types together by arbitrary combinations and ratios. Examples of other components include phosphors and inorganic particles. In addition, about these fluorescent substance and inorganic particle | grains, it mentions later by the term of the sealing part 23 (The term of 2-3-2-1. Fluorescent substance and the term of 2-3-2-2. Inorganic particle. reference). However, since the weir 22 does not easily guide light, a phosphor described later is often not contained in the weir 22.

  In the present embodiment, description will be made on the assumption that the weir 22 is formed of a material adjusted so that the refractive index is higher than that of the sealing portion 23 by dispersing inorganic particles in a transparent resin.

(2-3. Sealing part)
The sealing part 23 is a member formed in a region surrounded by the weir 22 on the wiring substrate 1 as shown in FIGS. 1 to 3 and seals the semiconductor light emitting element 21. The sealing unit 23 seals the semiconductor light emitting element 21 and secures the role of a light guide unit that guides light from the semiconductor light emitting element 21 to a predetermined position. The light emitted from the semiconductor light emitting element 21 is guided through the sealing portion 23 and emitted to the outside.

However, in the semiconductor light emitting device 100, as shown in FIG. 3, the height H ₁ from the wiring substrate 1 of the weir 22 is substantially equal to or greater formed height of H ₂ from the wiring substrate 1 of the sealing portion 23 ing. Here, “substantially equal” means that even if a part of the sealing portion 23 is formed higher than the weir 22, it is acceptable if the sealing portion 23 does not exhibit the lens effect. is there. However, it is more preferable that the height H ₂ of the sealing portion 23 is formed to be equal to or lower than the height H ₁ of the weir 22. In addition to being required to have flexibility and transparency for the sealing portion 23, conventionally, a sealing material having high viscosity and high leveling property has been used in order to ensure shape retention performance. However, it is difficult to control the physical properties of the sealing material as described above, and it is difficult to put it to practical use, and the high viscosity and high leveling sealing material requires complicated operations such as potting. On the other hand, in the present invention, by selecting the height H ₁ of the weir 22 and the height H ₂ of the sealing portion 23 as described above, the selection of the sealing material that is the forming material of the sealing portion 23 can be performed. The semiconductor light emitting element 21 can be appropriately sealed with a wide range of sealing materials regardless of the physical properties. Therefore, even if a sealing material that does not have high shape retention performance is used, the sealing material does not flow out and affect other components. In addition, precise control of physical properties such as viscosity and thixotropy of the sealing material is unnecessary. Further, since it is possible to use a sealing material having a low viscosity, it is easy to achieve both leveling property and shape, and thus the shape of the sealing portion 23 can be easily controlled, and at the time of formation Is easy to operate. In addition, when a sealing material having a high viscosity and thixotropy is used as in the prior art described in Patent Document 2, when the semiconductor light emitting device is mounted on the wiring board, the sealing material is placed in the gap between the semiconductor light emitting element and the wiring board. However, according to the present embodiment, since the sealing material having low viscosity and thixotropy can be used, it is possible to prevent insufficient filling as described above.

The surface 23a of the sealing portion 23 is preferably a flat surface or a concave surface. When the surface 23a is formed as a convex surface, a lens surface formed by the convex surface is formed. Usually, since this lens surface is formed unevenly for each light emitting unit 2, there is a variation in light emission from each light emitting unit 2. This is because it often occurs. Further, the lens surface becomes non-uniform depending on the position of the semiconductor light emitting element 21, and the lens effect tends to vary. On the other hand, if the surface 23a is formed as a flat surface or a concave surface, such variation does not occur, and the light emitted from the semiconductor light emitting device 100 can be controlled accurately.
In the present embodiment, it is assumed that the surface 23a of the sealing portion 23 is formed as a concave surface having a depressed central portion.

  Furthermore, the sealing part 23 may be formed uniformly, but may be divided into two or more parts. For example, the sealing portion 23 can be formed in a multilayer structure including two or more layers. When the sealing portion 23 has a multilayer structure, the surface 23a of the sealing portion 23 is preferably as close to a plane as possible in order to make the thickness of each layer uniform in the plane. However, the sealing portion 23 is usually formed uniformly from the viewpoint of productivity.

  Further, regarding the sealing material, in the semiconductor light emitting device 100, the semiconductor light emitting device 100 indicates that the sealing portion 23 sealing the semiconductor light emitting element 21 is formed of a sealing material having a high light transmittance. From the viewpoint of increasing the light extraction efficiency from the apparatus 100, it is preferable. Among these, it is preferable to use a curable material described below.

(2-3-1. Curable material)
The curable material is a fluid material and is a material that is cured by performing some kind of curing treatment. The fluid state means, for example, a liquid state or a gel state. The curable material secures the role of the sealing portion 23 that guides light from the semiconductor light emitting element 21 to a predetermined position. Furthermore, only 1 type may be used for a curable material and it may use 2 or more types together by arbitrary combinations and a ratio. As such a curable material, any of inorganic materials, organic materials, and a mixture of both can be used.

  As the inorganic material, for example, a solution obtained by hydrolytic polymerization of a solution containing a metal alkoxide, a ceramic precursor polymer or a metal alkoxide by a sol-gel method, or a combination thereof is solidified (for example, a siloxane bond). Inorganic materials having

  On the other hand, examples of the organic material include a thermosetting resin and a photocurable resin. Specific examples include methacrylic resins such as methyl polymethacrylate; styrene resins such as polystyrene and styrene-acrylonitrile copolymers; polycarbonate resins; polyester resins; phenoxy resins; butyral resins; polyvinyl alcohols; Cellulose-based resins such as cellulose acetate butyrate; epoxy resins; phenol resins; silicone resins.

  Among these curable materials, it is preferable to use a silicon-containing compound for the purpose of heat resistance, light resistance, etc., particularly when the high-power semiconductor light emitting device 21 is used. A silicon-containing compound is a compound having a silicon atom in the molecule, organic materials such as polyorganosiloxane (silicone-based materials), inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride, and borosilicates and phosphosilicates. Examples thereof include glass materials such as salts and alkali silicates. Of these, silicone materials are preferred from the viewpoints of transparency, adhesion, ease of handling, mechanical and thermal adaptability relaxation characteristics, and the like.

The silicone material generally refers to an organic polymer having a siloxane bond as a main chain, and examples thereof include compounds represented by the following general composition formula (1) and / or mixtures thereof. (R ¹ R ² R ³ SiO _1/2 ) _M (R ⁴ R ⁵ SiO _2/2 ) _D (R ⁶ SiO _3/2 ) _T (SiO _4/2 ) _Q Formula (1)

In the general composition formula (1), R ¹ to R ⁶ represent those selected from the group consisting of an organic functional group, a hydroxyl group and a hydrogen atom. R ¹ to R ⁶ may be the same or different.
In the general composition formula (1), M, D, T, and Q represent a number of 0 or more and less than 1. However, the number satisfies M + D + T + Q = 1.
In addition, when using the said silicone type material as a curable material, what is necessary is just to harden | cure by a heat | fever or light after sealing using a liquid silicone type material in the case of the application | coating.

  When silicone materials are classified according to the curing mechanism, silicone materials such as an addition polymerization curing type, a condensation polymerization curing type, an ultraviolet curing type, and a peroxide vulcanization type can be generally cited. Among these, addition polymerization curing type (addition type silicone material), condensation curing type (condensation type silicone material), and ultraviolet curing type are preferable. Hereinafter, the addition type silicone material and the condensation type silicone material will be described.

  The addition-type silicone material refers to a material in which polyorganosiloxane chains are crosslinked by organic addition bonds. Typical examples include compounds having a Si—C—C—Si bond at the cross-linking point obtained by reacting vinyl silane and hydrosilane in the presence of an addition catalyst such as a Pt catalyst. . As these, commercially available products can be used. Specific examples of addition polymerization curing type trade names include “LPS-1400”, “LPS-2410”, and “LPS-3400” manufactured by Shin-Etsu Chemical Co., Ltd.

  Specifically, the addition-type silicone material is, for example, (A) an alkenyl group-containing organopolysiloxane represented by the following average composition formula (2) and (B) represented by the following average composition formula (3). The hydrosilyl group-containing organopolysiloxane is mixed with the total alkenyl group of (A) in an amount ratio such that the total hydrosilyl group amount of (B) is 0.5 to 2.0 times, and a catalytic amount of (C) It can be obtained by reacting in the presence of an addition reaction catalyst.

(A) The alkenyl group-containing organopolysiloxane is an organopolysiloxane having an alkenyl group bonded to at least two silicon atoms in one molecule represented by the following composition formula (2).
R _n SiO _{[(4-n) / 2]} (2)
(In the formula (2), R is the same or different substituted or unsubstituted monovalent hydrocarbon group, alkoxy group or hydroxyl group, and n is a positive number satisfying 1 ≦ n <2. At least one of R is an alkenyl group.)

(B) The hydrosilyl group-containing polyorganosiloxane is an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule represented by the following composition formula (3).
R ′ _a H _b SiO _{[(4-ab) / 2]} (3)
(In the formula (3), R ′ is the same or different substituted or unsubstituted monovalent hydrocarbon group excluding the alkenyl group, and a and b are 0.7 ≦ a ≦ 2.1,. (It is a positive number satisfying 001 ≦ b ≦ 1.0 and 0.8 ≦ a + b ≦ 2.6.)

Hereinafter, the addition type silicone resin will be described in more detail.
In R of the above formula (2), the alkenyl group is preferably an alkenyl group having 2 to 8 carbon atoms such as a vinyl group, an allyl group, a butenyl group, or a pentenyl group. When R is a hydrocarbon group, those selected from alkyl groups such as a methyl group and an ethyl group, monovalent hydrocarbon groups having 1 to 20 carbon atoms such as a vinyl group and a phenyl group are preferable, and more preferable. Is a methyl group, an ethyl group, or a phenyl group. R may be different, but when UV resistance is required, 80% or more of R is preferably a methyl group. R may be an alkoxy group having 1 to 8 carbon atoms or a hydroxyl group, but the content of the alkoxy group or hydroxyl group is preferably 3% or less of the weight of (A).
In the composition formula (2), n is a positive number satisfying 1 ≦ n <2, but if this value is 2 or more, sufficient strength as a sealing material cannot be obtained, and if it is less than 1, Furthermore, the synthesis of this organopolysiloxane becomes difficult.
In addition, (A) alkenyl group containing organopolysiloxane may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

Next, the (B) hydrosilyl group-containing polyorganosiloxane acts as a crosslinking agent for curing the composition by performing a hydrosilylation reaction with the (A) alkenyl group-containing organopolysiloxane.
In the composition formula (3), R ′ represents a monovalent hydrocarbon group excluding an alkenyl group. Here, examples of R ′ include the same groups as those of R in the composition formula (2) (excluding alkenyl groups). Further, when used for applications requiring UV resistance, at least 80% is preferably a methyl group.
In the composition formula (3), a is usually a positive number of 0.7 or more, preferably 0.8 or more, and usually 2.1 or less, preferably 2 or less. Moreover, b is 0.001 or more normally, Preferably it is 0.01 or more, and is a positive number normally 1.0 or less. However, a + b is 0.8 or more, preferably 1 or more, and 2.6 or less, preferably 2.4 or less.
Furthermore, (B) hydrosilyl group-containing polyorganosiloxane has at least 2, preferably 3 or more SiH bonds in one molecule.
The molecular structure of the (B) hydrosilyl group-containing polyorganosiloxane may be any of linear, cyclic, branched, and three-dimensional network structures, but the number of silicon atoms in one molecule (or the degree of polymerization) 3 to 1000, particularly 3 to 300 can be used.
In addition, (B) hydrosilyl group containing polyorganosiloxane may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

  The blending amount of the (B) hydrosilyl group-containing polyorganosiloxane depends on the total amount of alkenyl groups in the (A) alkenyl group-containing organopolysiloxane. Specifically, the total SiH amount of the (B) hydrosilyl group-containing polyorganosiloxane is usually 0.5 mol times or more, preferably 0.8 mol to the total alkenyl groups of the (A) alkenyl group-containing organopolysiloxane. The amount may be at least mol times, and usually at most 2.0 mol times, preferably at most 1.5 mol times.

The (C) addition reaction catalyst is a catalyst for accelerating the hydrosilylation addition reaction between (A) the alkenyl group in the alkenyl group-containing organopolysiloxane and (B) the SiH group in the hydrosilyl group-containing polyorganosiloxane. Examples of the addition reaction catalyst (C) include platinum black, platinous chloride, chloroplatinic acid, a reaction product of chloroplatinic acid and a monohydric alcohol, a complex of chloroplatinic acid and olefins, and platinum bisacetoacetate. And platinum group metal catalysts such as platinum-based catalysts, palladium-based catalysts and rhodium-based catalysts.
In addition, (C) addition reaction catalyst may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.
The addition amount of the addition reaction catalyst can be a catalytic amount, but usually, as a platinum group metal, the total weight of (A) alkenyl group-containing organopolysiloxane and (B) hydrosilyl group-containing polyorganosiloxane, It is preferable to blend 1 ppm or more, particularly 2 ppm or more, and 500 ppm or less, particularly 100 ppm or less.

  In addition to the above (A) alkenyl group-containing organopolysiloxane, (B) hydrosilyl group-containing polyorganosiloxane, and (C) addition reaction catalyst, the composition for obtaining an addition-type silicone material is curable as an optional component, Addition reaction control agent for giving pot life, linear diorganopolysiloxane having an alkenyl group for adjusting hardness and viscosity, for example, linear non-reactive organopolysiloxane, number of silicon atoms May contain about 2 to 10 linear or cyclic low molecular organopolysiloxanes within the range not impairing the effects of the present invention.

  The curing conditions for the composition are not particularly limited, but are preferably 120 to 180 ° C. and 30 to 180 minutes. When the resulting cured product is in a soft gel state even after curing, the linear expansion coefficient is larger than that of a silicone resin in the form of rubber or hard plastic. Generation of internal stress can be suppressed.

  As the addition-type silicone material, known materials can be used, and an additive or an organic group for improving adhesion to metal or ceramics may be further introduced. For example, silicone materials described in Japanese Patent No. 3909826, Japanese Patent No. 3910080, Japanese Patent Application Laid-Open No. 2003-128922, Japanese Patent Application Laid-Open No. 2004-221308, and Japanese Patent Application Laid-Open No. 2004-186168 are suitable.

  On the other hand, examples of the condensation type silicone material include a compound having a Si—O—Si bond obtained by hydrolysis and polycondensation of an alkylalkoxysilane at a crosslinking point. Specific examples include polycondensates (hydrolysis / polycondensation products) obtained by hydrolysis / polycondensation of compounds represented by the following general formula (4) and / or (5) and / or oligomers thereof. It is done.

M ^{m +} X _n Y ¹ _m−n (4)
(In Formula (4), M represents at least one element selected from the group consisting of silicon, aluminum, zirconium, and titanium, X represents a hydrolyzable group, and Y ¹ represents a monovalent organic group. M represents an integer of 1 or more representing the valence of M, and n represents an integer of 1 or more representing the number of X groups, where m ≧ n.

^{_{(M s + X t Y 1}} s-t-1) u Y 2 (5)
(In formula (5), M represents at least one element selected from the group consisting of silicon, aluminum, zirconium, and titanium, X represents a hydrolyzable group, and Y ¹ represents a monovalent organic group. Y ² represents a u-valent organic group, s represents an integer of 1 or more representing the valence of M, t represents an integer of 1 to s−1, and u represents an integer of 2 or more. )

  The condensation type silicone material may contain a curing catalyst. Any curing catalyst can be used as long as the effects of the present invention are not significantly impaired. For example, a metal chelate compound can be suitably used. The metal chelate compound preferably contains one or more selected from the group consisting of aluminum, zirconium, hafnium, tin, zinc, titanium and tantalum, and more preferably contains Zr. In addition, only 1 type may be used for a curing catalyst and it may use 2 or more types together by arbitrary combinations and a ratio.

Examples of such condensation-type silicone materials include Japanese Patent Application Nos. 2006-47274 to 47277 (for example, Japanese Patent Application Laid-Open Nos. 2007-112297 to 112975 and Japanese Patent Application No. 2007-19459) and Japanese Patent Application No. 2006. The member for semiconductor light-emitting devices described in the specification of 176468 is suitable.
Of the condensed silicone materials, particularly preferred materials will be described below.

In general, the silicone-based material often has low adhesion to the semiconductor light emitting element 21 and the wiring substrate 1 on which the element 21 is disposed. Therefore, it is preferable to use a silicone material having high adhesion as the curable material according to the present invention, and in particular, a condensed silicone material having one or more of the following features <1> to <3>. More preferably, it is used.
<1> The silicon content is 20% by weight or more.
<2> The solid Si-nuclear magnetic resonance (NMR) spectrum measured by the method described in detail later has at least one peak derived from Si in the following (a) and / or (b).
(A) A peak whose peak top position is in the region of chemical shift of −40 ppm or more and 0 ppm or less with respect to silicone rubber (polydimethylsiloxane), and whose peak half-value width is 0.3 ppm or more and 3.0 ppm or less.
(B) A peak whose peak top position is in a region where the chemical shift is −80 ppm or more and less than −40 ppm with respect to silicone rubber (polydimethylsiloxane), and the peak half-value width is 0.3 ppm or more and 5.0 ppm or less.
<3> The silanol content is 0.01% by weight or more and 10% by weight or less.

  The curable material according to the present invention is preferably a silicone material having the characteristic <1> among the above characteristics <1> to <3>. More preferably, a silicone material having the above characteristics <1> and <2> is preferable. Particularly preferably, a silicone material having all of the above features <1> to <3> is preferable. Hereinafter, the features <1> to <3> will be described.

・ Characteristic <1> (silicon content)
The silicon content of a silicone material suitable as a curable material according to the present invention is usually 20% by weight or more, preferably 25% by weight or more, and more preferably 30% by weight or more. On the other hand, the upper limit is usually in the range of 47% by weight or less because the silicon content of the glass composed solely of SiO ₂ is 47% by weight.

  The silicon content of the silicone material is calculated based on the result of inductively coupled plasma spectrometry (hereinafter abbreviated as “ICP” where appropriate) using, for example, the following method. be able to.

{Measurement of silicon content}
Silicone material is baked in a platinum crucible in the air at 450 ° C. for 1 hour, then at 750 ° C. for 1 hour, and at 950 ° C. for 1.5 hours to remove the carbon component, and then a small amount of residue is obtained. Add more than 10 times the amount of sodium carbonate and heat with a burner to melt, cool this, add demineralized water, and adjust the pH to neutral with hydrochloric acid to a few ppm as silicon. ICP analysis is performed.

Features <2> (Solid Si-NMR spectrum)
When a solid Si-NMR spectrum of a silicone material suitable as a curable material according to the present invention is measured, the peak region of (a) and / or (b) derived from a silicon atom to which a carbon atom of an organic group is directly bonded. At least one, preferably a plurality of peaks are observed.

When organized by chemical shift, in the silicone material suitable as the curable material according to the present invention, the half width of the peak described in the above (a) is generally the same as the above (b) because the restriction of molecular motion is small. It is smaller than the peak described, and is usually 3.0 ppm or less, preferably 2.0 ppm or less, and usually 0.3 ppm or more.
On the other hand, the half width of the peak described in (b) is usually 5.0 ppm or less, preferably 4.0 ppm or less, and usually 0.3 ppm or more, preferably 0.4 ppm or more.

  If the half-value width of the peak observed in the chemical shift region is too large, the molecular motion is constrained and strain is large, cracks are likely to occur, and the member may be inferior in heat resistance and weather resistance. For example, when a large amount of tetrafunctional silane is used, or when a large internal stress is accumulated by rapid drying in the drying process, the full width at half maximum may be larger than the above range. In addition, if the half width of the peak is too small, Si atoms in the environment will not be involved in siloxane crosslinking, and heat resistance is higher than substances formed mainly from siloxane bonds, such as examples where trifunctional silane remains in an uncrosslinked state. -It may be a member inferior in weather resistance. However, in a silicone material containing a small amount of Si component in a large amount of organic component, good heat resistance / light resistance and coating performance can be obtained even if the peak of the above-mentioned half-value range is observed at -80 ppm or more. There may not be.

  The value of the chemical shift of the silicone material suitable as the curable material according to the present invention can be calculated based on the result of performing solid Si-NMR measurement using the following method, for example. In addition, analysis of measurement data (half-width or silanol amount analysis) is performed by a method of dividing and extracting each peak by, for example, waveform separation analysis using a Gaussian function or a Lorentz function.

{Solid Si-NMR spectrum measurement and silanol content calculation}
When performing a solid Si-NMR spectrum about a silicone type material, a solid Si-NMR spectrum measurement and waveform separation analysis are performed on condition of the following. Further, from the obtained waveform data, the half width of each peak is determined for the silicone material. Also, from the ratio of the peak area derived from silanol to the total peak area, the ratio (%) of silicon atoms that are silanols in all silicon atoms is obtained, and the silanol content is determined by comparing with the silicon content analyzed separately. Ask.

{Device conditions}
Equipment: Chemagnetics Infinity CMX-400 Nuclear Magnetic Resonance Spectrometer
²⁹ Si resonance frequency: 79.436 MHz
Probe: 7.5 mmφ CP / MAS probe Measurement temperature: room temperature Sample rotation speed: 4 kHz
Measurement method: Single pulse method
¹ H decoupling frequency: 50 kHz
²⁹ Si flip angle: 90 °
²⁹ Si 90 ° pulse width: 5.0μs
Repeat time: 600s
Integration count: 128 Observation width: 30 kHz
Broadening factor: 20Hz
Reference sample Solid ²⁹ Si Silicone rubber for reference sample (polydimethylsiloxane)

{Data processing example}
For silicone-based materials, 512 points are taken as measurement data, zero-filled to 8192 points, and Fourier transformed.
{Waveform separation analysis method}
For each peak of the spectrum after Fourier transform, optimization calculation is performed by a non-linear least square method with the center position, height, and half width of the peak shape created by Lorentz waveform and Gaussian waveform or a mixture of both as variable parameters.
For peak identification, refer to AIChE Journal, 44 (5), p.1141, 1998, etc.

・ Characteristic <3> (silanol content)
The silicone material suitable as the curable material according to the present invention has a silanol content in the cured product of usually 0.01% by weight or more, preferably 0.1% by weight or more, more preferably 0.3% by weight or more. In addition, it is usually 10% by weight or less, preferably 8% by weight or less, and more preferably 5% by weight or less. By reducing the silanol content, the silanol-based material has little change over time, excellent long-term performance stability, and excellent performance with low hygroscopicity. However, since a member containing no silanol is inferior in adhesion, there exists an optimum range for the silanol content as described above.

  In addition, the silanol content of the silicone-based material is measured by, for example, performing the solid Si-NMR spectrum measurement using the method described in the above section {Measurement of solid Si-NMR spectrum and calculation of silanol content}. The ratio (%) of silicon atoms that are silanols in the total silicon atoms can be obtained from the ratio of the peak area derived from silanol to the silicon, and can be calculated by comparing with the silicon content analyzed separately.

In addition, since the silicone material suitable as the curable material according to the present invention contains an appropriate amount of silanol, silanol is present in polar portions existing on the surfaces of the wiring substrate 1, the weir 22, the sealing portion 23, and the like. Hydrogen bonds and adhesion is developed. Examples of the polar part include a hydroxyl group and a metalloxane-bonded oxygen.
Furthermore, the silicone material suitable as the curable material according to the present invention is heated between the surface of the members such as the wiring substrate 1, the weir 22 and the sealing portion 23 by heating in the presence of an appropriate catalyst. In this way, a covalent bond can be formed by dehydration condensation, and stronger adhesion can be expressed.

  On the other hand, if there is too much silanol, the inside of the system will thicken and it will be difficult to apply, or it will become more active and solidify before the light-boiling components volatilize by heating, leading to increased foaming and internal stress. It may occur and induce cracks.

  By the way, when the hydrolysis / polycondensation product of alkylalkoxysilane is used as the curable material, the hydrolysis / polycondensation product has a lower viscosity than other curable materials such as epoxy resin and silicone resin. In addition, it has the advantage of being able to maintain sufficient coating performance even when dispersed at a high concentration of inorganic particles. It is also possible to increase the viscosity by adjusting the degree of polymerization and adding a thixo material such as aerosil as necessary, and adjusting the viscosity according to the target phosphor content and / or inorganic particle content. It has a large width and can flexibly cope with various types of coating methods such as potting, spin coating, and printing, as well as the type and shape of the object to be coated.

(2-3-2. Other components)
As long as the effect of the present invention is not significantly impaired, the sealing material can be used by further mixing other components with the above-described inorganic material and / or organic material. In addition, only 1 type may be used for another component and it may use 2 or more types together by arbitrary combinations and ratios. Examples of other components include phosphors and inorganic particles.

(2-3-2-1. Phosphor)
By including the phosphor in the sealing material, the sealing portion 23 can be formed as a member containing the phosphor (hereinafter, appropriately referred to as “phosphor-containing portion”). In this case, the light emitted from the semiconductor light emitting element 21 can be wavelength-converted by the phosphor in the sealing portion 23, and the wavelength-converted light can be emitted from the light emitting portion 2. Normally, the light emitted from the light emitting unit 2 is a mixed color of the light emitted from the semiconductor light emitting element 21 and the fluorescence emitted by the phosphor after wavelength conversion. It is possible to adjust.
In addition, fluorescent substance may be used individually by 1 type and may use 2 or more types together by arbitrary combinations and a ratio.

There is no particular limitation on the composition of the _{phosphor, Y} 2 _O 3, Zn 2 metal oxide represented by SiO ₄ and the like is a crystalline _matrix, Ca _{5 (PO 4)} 3 phosphate typified by Cl, etc. And sulfides represented by ZnS, SrS, CaS, etc., ions of rare earth metals such as Ce, Pr, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Ag, Cu, Au A combination of metal ions such as Al, Mn, and Sb as an activator or a coactivator is preferable.

Preferred examples of the crystal matrix include sulfides such as (Zn, Cd) S, SrGa ₂ S ₄ , SrS and ZnS, oxysulfides such as Y ₂ O ₂ S, and (Y, Gd) ₃ Al ₅ O. ₁₂ , YAlO ₃ , BaMgAl ₁₀ O ₁₇ , (Ba, Sr) (Mg, Mn) Al ₁₀ O ₁₇ , (Ba, Sr, Ca) (Mg, Zn, Mn) Al ₁₀ O ₁₇ , BaAl ₁₂ O ₁₉ , CeMgAl ₁₁ O ₁₉ , (Ba, Sr, Mg) O.Al ₂ O ₃ , BaAl ₂ Si ₂ O ₈ , SrAl ₂ O ₄ , Sr ₄ Al ₁₄ O ₂₅ , aluminate such as Y ₃ Al ₅ O ₁₂ , Y Silicates such as ₂ SiO ₅ and Zn ₂ SiO ₄ , oxides such as SnO ₂ and Y ₂ O ₃ , borates such as GdMgB ₅ O ₁₀ and (Y, Gd) BO ₃ , Ca ₁₀ (PO ₄ ) ₆ ( F, Cl ₂ include _{(Sr, Ca, Ba, Mg} ) 10 halophosphate of _{(PO 4)} or the like _{6 Cl 2, Sr 2 P 2} O 7, the (La, Ce) phosphate PO _4, etc. etc. .

However, the above-mentioned crystal matrix and activator or coactivator are not particularly limited in elemental composition, and can be partially replaced with elements of the same family, and the obtained phosphor is light in the near ultraviolet to visible region. Any material that absorbs and emits visible light can be used.
Specifically, the following phosphors can be used, but these are merely examples, and phosphors that can be used in the present invention are not limited to these. In the examples of the phosphors in this specification, phosphors that are different only in a part of the structure are appropriately omitted. For example, “Y ₂ SiO ₅ : Ce ³⁺ ”, “Y ₂ SiO ₅ : Tb ³⁺ ” and “Y ₂ SiO ₅ : Ce ³⁺ , Tb ³⁺ ” are changed to “Y ₂ SiO ₅ : Ce ³⁺ , Tb ³⁺ ”, “ “La ₂ O ₂ S: Eu”, “Y ₂ O ₂ S: Eu” and “(La, Y) ₂ O ₂ S: Eu” are collectively shown as “(La, Y) ₂ O ₂ S: Eu”. ing. Omitted parts are separated by commas (,).

Red phosphor A specific wavelength range of fluorescence emitted by a phosphor emitting red fluorescence (hereinafter referred to as “red phosphor” as appropriate) is exemplified. The peak wavelength is usually 570 nm or more, preferably 580 nm or more. Usually, it is 700 nm or less, preferably 680 nm or less.

Examples of such a red phosphor include europium activation represented by (Mg, Ca, Sr, Ba) ₂ Si ₅ N ₈ : Eu, which is composed of fractured particles having a red fracture surface and emits light in the red region. Alkaline earth silicon nitride phosphor, composed of growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in the red region (Y, La, Gd, Lu) ₂ O ₂ S: Eu Examples thereof include europium-activated rare earth oxychalcogenide phosphors.

  Furthermore, the oxynitride and / or acid containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W, and Mo described in JP-A-2004-300247 A phosphor containing a sulfide and containing an oxynitride having an alpha sialon structure in which a part or all of the Al element is substituted with a Ga element can also be used. These are phosphors containing oxynitride and / or oxysulfide.

In addition, examples of red phosphors include Eu-activated oxysulfide phosphors such as (La, Y) ₂ O ₂ S: Eu, Y (V, P) O ₄ : Eu, and Y ₂ O ₃ : Eu. Eu-activated oxide _{phosphor, (Ba, Sr, Ca,} Mg) 2 SiO 4: Eu, Mn, (Ba, Mg) 2 SiO 4: Eu, Eu such as Mn, Mn-activated silicate phosphor, Eu-activated sulfide phosphors such as (Ca, Sr) S: Eu, Eu-activated aluminate phosphors such as YAlO ₃ : Eu, LiY ₉ (SiO ₄ ) ₆ O ₂ : Eu, Ca ₂ Y ₈ ( SiO ₄ ) ₆ O ₂ : Eu, (Sr, Ba, Ca) ₃ SiO ₅ : Eu, Sr ₂ BaSiO ₅ : Eu-activated silicate phosphor such as Eu, (Y, Gd) ₃ Al ₅ O ₁₂ : Ce , (Tb, Gd) ₃ Al ₅ O ₁₂ : Ce-activated aluminate phosphor such as Ce, _{Ca, Sr, Ba) 2 Si} 5 N 8: Eu, (Mg, Ca, Sr, Ba) SiN 2: Eu, (Mg, Ca, Sr, Ba) AlSiN 3: Eu -activated nitride phosphor such as Eu , (Mg, Ca, Sr, Ba) AlSiN ₃ : Ce-activated nitride phosphors such as Ce, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, Mn such as Eu, Mn Activated halophosphate phosphor, (Ba ₃ Mg) Si ₂ O ₈ : Eu, Mn, (Ba, Sr, Ca, Mg) ₃ (Zn, Mg) Si ₂ O ₈ : Eu, Mn, etc. Activated silicate phosphor, 3.5MgO · 0.5MgF ₂ · GeO ₂ : Mn activated germanate phosphor such as Mn, Eu activated oxynitride phosphor such as Eu activated α sialon, (Gd, _{Y, Lu, La) 2 O} 3: Eu, Bi, etc. Eu, Bi-activated oxide _{Phosphor, (Gd, Y, Lu,} La) 2 O 2 S: Eu, Eu Bi, etc., Bi Tsukekatsusan sulfide phosphor, (Gd, Y, Lu, La) VO 4: Eu, Bi, etc. Eu, Bi activated vanadate phosphors, SrY ₂ S ₄ : Eu, Ce activated sulfide phosphors such as Eu, Ce, etc., Ce activated sulfide phosphors such as CaLa ₂ S ₄ : Ce, (Ba, Sr, Ca) MgP ₂ O ₇ : Eu, Mn, (Sr, Ca, Ba, Mg, Zn) ₂ P ₂ O ₇ : Eu, Mn-activated phosphate phosphor such as Eu, Mn, (Y, Lu) ) ₂ WO ₆ : Eu, Mo activated tungstate phosphor such as Eu, Mo, (Ba, Sr, Ca) _x Si _y N _z : Eu, Ce (provided that x, y, z is 1 or more) integer), such as Eu, Ce-activated nitride _{phosphor, (Ca, Sr, Ba,} Mg) 10 (PO 4) 6 (F, C , Br, OH): Eu, Eu such as Mn, Mn-activated halophosphate _{phosphor, ((Y, Lu, Gd} , Tb) 1-x Sc x Ce y) 2 (Ca, Mg) 1-r ( It is also possible to use Ce-activated silicate phosphors such as Mg, Zn) _{2 + r} Si _z-q Ge _q O _{12 + δ} .

  Examples of red phosphors include β-diketonates, β-diketones, aromatic carboxylic acids, red organic phosphors composed of rare earth element ion complexes having an anion such as Bronsted acid as a ligand, and perylene pigments (for example, Dibenzo {[f, f ′]-4,4 ′, 7,7′-tetraphenyl} diindeno [1,2,3-cd: 1 ′, 2 ′, 3′-lm] perylene), anthraquinone pigment, Lake pigments, azo pigments, quinacridone pigments, anthracene pigments, isoindoline pigments, isoindolinone pigments, phthalocyanine pigments, triphenylmethane basic dyes, indanthrone pigments, indophenol pigments, It is also possible to use a cyanine pigment or a dioxazine pigment.

Of the red phosphors, those having a peak wavelength in the range of 580 nm or more, preferably 590 nm or more, and 620 nm or less, preferably 610 nm or less can be suitably used as the orange phosphor. Examples of such orange phosphors include (Sr, Ba) ₃ SiO ₅ : Eu, (Sr, Mg) ₃ (PO ₄ ) ₂ : Sn ²⁺ , SrCaAlSiN ₃ : Eu, Eu-activated α sialon, etc. Examples thereof include activated oxynitride phosphors.

Green phosphor A specific wavelength range of fluorescence emitted by a phosphor emitting green fluorescence (hereinafter referred to as “green phosphor” as appropriate) is exemplified. The peak wavelength is usually 490 nm or more, preferably 500 nm or more. Usually, it is 570 nm or less, preferably 550 nm or less.

As such a green phosphor, for example, a europium-activated alkali represented by (Mg, Ca, Sr, Ba) Si ₂ O ₂ N ₂ : Eu that is composed of fractured particles having a fracture surface and emits light in the green region. Europium-activated alkaline earth silicate composed of an earth silicon oxynitride phosphor, broken particles having a fracture surface, and emitting green light (Ba, Ca, Sr, Mg) ₂ SiO ₄ : Eu System phosphors and the like.

In addition, as the green phosphor, Eu-activated aluminate phosphors such as Sr ₄ Al ₁₄ O ₂₅ : Eu, (Ba, Sr, Ca) Al ₂ O ₄ : Eu, (Sr, Ba) Al ₂ Si ₂ O ₈ : Eu, (Ba, Mg) ₂ SiO ₄ : Eu, (Ba, Sr, Ca, Mg) ₂ SiO ₄ : Eu, (Ba, Sr, Ca) ₂ (Mg, Zn) Si ₂ O ₇ : Eu activated silicate phosphor such as Eu, Y ₂ SiO ₅ : Ce, Tb activated silicate phosphor such as Ce, Tb, Sr ₂ P ₂ O ₇ —Sr ₂ B ₂ O ₅ : Eu such as Eu Activated boric acid phosphor, Sr ₂ Si ₃ O ₈ -2SrCl ₂ : Eu activated halosilicate phosphor such as Eu, Zn ₂ SiO ₄ : Mn activated silicate phosphor such as Mn, CeMgAl ₁₁ O _{19: Tb, Y 3 Al 5} O 12: Tb and Tb such Activated aluminate _{phosphors, Ca 2 Y 8 (SiO 4} ) 6 O 2: Tb, La 3 Ga 5 SiO 14: Tb -activated silicate phosphors such as Tb, (Sr, Ba, Ca ) Ga 2 S 4 : Eu, Tb, Sm activated thiogallate phosphor such as Eu, Tb, Sm, etc. Y ₃ (Al, Ga) ₅ O ₁₂ : Ce, (Y, Ga, Tb, La, Sm, Pr, Lu) ₃ (Al , Ga) ₅ O ₁₂ : Ce-activated aluminate phosphor such as Ce, Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce, Ca ₃ (Sc, Mg, Na, Li) ₂ Si ₃ O ₁₂ : Ce, etc. Ce-activated silicate phosphor, Ce-activated oxide phosphor such as CaSc ₂ O ₄ : Ce, SrSi ₂ O ₂ N ₂ : Eu, (Sr, Ba, Ca) Si ₂ O ₂ N ₂ : Eu, Eu Eu-activated oxynitride phosphors such as activated β-sialon, BaMgA l ₁₀ O ₁₇ : Eu, Mn activated aluminate phosphor such as Eu, Mn, SrAl ₂ O ₄ : Eu activated aluminate phosphor such as Eu, (La, Gd, Y) ₂ O ₂ S: Tb-activated oxysulfide phosphors such as Tb, LaPO ₄ : Ce, Tb-activated phosphate phosphors such as Ce, Tb, and sulfide phosphors such as ZnS: Cu, Al, ZnS: Cu, Au, Al _{, (Y, Ga, Lu,} Sc, La) BO 3: Ce, Tb, Na 2 Gd 2 B 2 O 7: Ce, Tb, (Ba, Sr) 2 (Ca, Mg, Zn) B 2 O 6: Ce, Tb activated borate phosphors such as K, Ce, Tb, Eu, Mn activated halosilicate phosphors such as Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu, Mn, (Sr, Ca, Ba _{) (Al, Ga, in)} 2 S 4: Eu activated thioaluminate phosphor or thio such as Eu Rate _{phosphor, (Ca, Sr) 8 (} Mg, Zn) (SiO 4) 4 Cl 2: It is also possible to use Eu, Eu such as Mn, Mn-activated halo silicate phosphor and the like.

  Examples of green phosphors include pyridine-phthalimide condensed derivatives, benzoxazinone-based, quinazolinone-based, coumarin-based, quinophthalone-based, naltalimide-based fluorescent dyes, terbium complexes having hexyl salicylate as a ligand, etc. It is also possible to use organic phosphors.

Blue phosphor A specific wavelength range of fluorescence emitted by a phosphor emitting blue fluorescence (hereinafter referred to as “blue phosphor” as appropriate) is exemplified. The peak wavelength is usually 420 nm or more, preferably 440 nm or more. Usually, it is 480 nm or less, preferably 470 nm or less.

As such a blue phosphor, a europium-activated barium magnesium aluminate system represented by BaMgAl ₁₀ O ₁₇ : Eu composed of growing particles having a substantially hexagonal shape as a regular crystal growth shape and emitting light in a blue region. Europium activated halo represented by (Ca, Sr, Ba) ₅ (PO ₄ ) ₃ Cl: Eu, which is composed of phosphors and growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in a blue region. Calcium phosphate phosphor, composed of growing particles having a substantially cubic shape as a regular crystal growth shape, emits light in the blue region, and is activated by europium represented by (Ca, Sr, Ba) ₂ B ₅ O ₉ Cl: Eu Consists of alkaline earth chloroborate phosphors, fractured particles with fractured surfaces, and light emission in the blue-green region (Sr, Ca, Ba) Al ₂ O ₄ : Eu or (Sr, Ca, Ba) ₄ Al ₁₄ O ₂₅ : Europium-activated alkaline earth aluminate-based phosphors and the like.

In addition, as the blue phosphor, Sn-activated phosphate phosphors such as Sr ₂ P ₂ O ₇ : Sn, Sr ₄ Al ₁₄ O ₂₅ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, BaAl ₈ O ₁₃ : Eu-activated aluminate phosphors such as Eu, Ce-activated thiogallate phosphors such as SrGa ₂ S ₄ : Ce, CaGa ₂ S ₄ : Ce, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, BaMgAl ₁₀ O ₁₇ : Eu-activated aluminate phosphor such as Eu, Tb, Sm, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, Mn-activated aluminate phosphor such as Eu, Mn, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, (Ba, Sr, Ca) ₅ (PO ₄ ) ₃ (Cl, F, Br, OH): Eu activation such as Eu, Mn, Sb Halophosphate _{Phosphor, BaAl 2 Si 2 O 8:} Eu, (Sr, Ba) 3 MgSi 2 O 8: Eu -activated silicate phosphors such as _{Eu, Sr 2 P 2 O 7} : Eu -activated phosphate such as Eu Phosphors, sulfide phosphors such as ZnS: Ag, ZnS: Ag, Al, Ce activated silicate phosphors such as Y ₂ SiO ₅ : Ce, tungstate phosphors such as CaWO ₄ , (Ba, Sr, _{Ca) BPO 5: Eu, Mn} , (Sr, Ca) 10 (PO 4) 6 · nB 2 O 3: Eu, 2SrO · 0.84P 2 O 5 · 0.16B 2 O 3: Eu such as Eu, Mn It is also possible to use an activated borate phosphate phosphor, an Eu activated halosilicate phosphor such as Sr ₂ Si ₃ O ₈ .2SrCl ₂ : Eu, or the like.
Further, as the blue phosphor, for example, naphthalic acid imide-based, benzoxazole-based, styryl-based, coumarin-based, pyrazoline-based, triazole-based fluorescent dyes, organic phosphors such as thulium complexes, and the like can be used. .

Yellow phosphor A specific wavelength range of fluorescence emitted by a phosphor emitting yellow fluorescence (hereinafter referred to as “yellow phosphor” as appropriate) is usually 530 nm or more, preferably 540 nm or more, more preferably 550 nm. In addition, it is preferable that the wavelength range is usually 620 nm or less, preferably 600 nm or less, more preferably 580 nm or less. If the emission peak wavelength of the yellow phosphor is too short, the yellow component may be reduced and the color rendering properties may be inferior. If it is too long, the luminance of the light emitted from the sealing portion 23 may be reduced.

Examples of such yellow phosphors include various oxide, nitride, oxynitride, sulfide, and oxysulfide phosphors. In particular, RE ₃ M ₅ O ₁₂ : Ce (where RE represents at least one element of Y, Tb, Gd, Lu, Sm, and M represents at least one element of Al, Ga, Sc) . representing) and ^{_{M 2 3 M 3 2 M 4}} 3 O 12: Ce ( here, ^{M 2} is a divalent metal element, ^{M 3} is a trivalent metal element, ^{M 4} is a tetravalent metal element), etc. Garnet-based phosphor having a garnet structure represented, AE ₂ M ⁵ O ₄ : Eu (where AE represents at least one element of Ba, Sr, Ca, Mg, Zn, and M ⁵ represents Si, An orthosilicate phosphor represented by the following formula, an oxynitride phosphor obtained by substituting a part of oxygen of a constituent element of the phosphor with nitrogen, AEAlSiN ₃ : Ce (where AE is Ba, Sr Ca, Mg, representing at least one element of Zn.) Such as activated fluorescent products thereof with Ce of the nitride-based fluorescent material or the like having a CaAlSiN ₃ structure, or the like.
In addition, examples of yellow phosphors include sulfide phosphors such as CaGa ₂ S ₄ : Eu (Ca, Sr) Ga ₂ S ₄ : Eu, (Ca, Sr) (Ga, Al) ₂ S ₄ : Eu. It is also possible to use a phosphor activated with Eu such as an oxynitride-based phosphor having a SiAlON structure such as Ca _x (Si, Al) ₁₂ (O, N) ₁₆ : Eu.

Other phosphors As phosphors, phosphors other than those described above can be contained. For example, the sealing portion 23 itself can be formed of fluorescent glass in which an ionic fluorescent material or an organic / inorganic fluorescent component is uniformly dissolved and dispersed.

-Particle size of the phosphor The particle size of the phosphor is not particularly limited, but is the median particle size (D ₅₀ ), usually 0.1 µm or more, preferably 2 µm or more, more preferably 5 µm or more. Moreover, it is 100 micrometers or less normally, Preferably it is 50 micrometers or less, More preferably, it is 20 micrometers or less. When the median particle diameter (D ₅₀ ) of the phosphor is in the above range, light emitted from the semiconductor light emitting element 21 is sufficiently scattered in the phosphor-containing portion. Further, since the light emitted from the semiconductor light emitting element 21 is sufficiently absorbed by the phosphor particles, the wavelength conversion is performed with high efficiency and the light emitted from the phosphor is irradiated in all directions. As a result, when a plurality of types of phosphors are used, the primary light from each phosphor can be mixed into a desired color (for example, white), and uniform color and illuminance can be obtained. On the other hand, when the median particle diameter (D ₅₀ ) of the phosphor is larger than the above range, the phosphor cannot sufficiently fill the space of the sealing portion 23, so that the light transmitted from the semiconductor light emitting element 21 is sufficiently obtained. The phosphor may not be absorbed. The central particle size of the phosphor (D ₅₀₎ is smaller than the above range, to lower the luminous efficiency of the phosphor, there is a possibility that the illuminance is reduced.

The particle size distribution (QD) of the phosphor particles is preferably small in order to align the dispersion state of the particles in the phosphor-containing part, but in order to reduce the particle size, the classification yield is lowered and the cost is increased. 0.03 or more, preferably 0.05 or more, more preferably 0.07 or more. Moreover, it is 0.4 or less normally, Preferably it is 0.3 or less, More preferably, it is 0.2 or less.
The median particle size (D ₅₀ ) and particle size distribution (QD) can be determined from a weight-based particle size distribution curve. The weight-based particle size distribution curve is obtained by measuring the particle size distribution by a laser diffraction / scattering method, and specifically, for example, can be measured as follows.

{Measurement method of weight-based particle size distribution curve}
(1) A phosphor is dispersed in a solvent such as ethylene glycol in an environment where the temperature is 25 ° C. and the humidity is 70%.
(2) Measurement is performed in a particle size range of 0.1 μm to 600 μm using a laser diffraction particle size distribution measuring apparatus (Horiba LA-300).
(3) the integrated value in this weight-standard particle size distribution curve is denoted a particle size value when the 50% and median particle diameter D _50. Further, the particle size values when the integrated values are 25% and 75% are expressed as D ₂₅ and D ₇₅ , respectively, and defined as QD = (D ₇₅ −D ₂₅ ) / (D ₇₅ + D ₂₅ ). A small QD means a narrow particle size distribution.

  Further, the shape of the phosphor particles is arbitrary as long as it does not affect the formation of the phosphor-containing portion. For example, there is no particular limitation as long as the fluidity of the sealing material for forming the sealing portion 23 is not affected.

-Surface treatment of phosphor The phosphor may be subjected to a surface treatment for the purpose of enhancing water resistance or preventing unnecessary aggregation of the phosphor in the sealing portion 23. Examples of such surface treatment include surface treatment using an organic material, an inorganic material, a glass material and the like described in JP-A-2002-223008, and coating with a metal phosphate described in JP-A-2000-96045 and the like. Examples thereof include known treatments such as treatment, coating treatment with metal oxide, and silica coating.

As specific examples of the surface treatment, for example, the following surface treatments (i) to (iii) are performed in order to coat the surface of the phosphor with the metal phosphate.
(I) A predetermined amount of a water-soluble phosphate such as potassium phosphate or sodium phosphate, and at least one of alkaline earth metals such as calcium chloride, strontium sulfate, manganese chloride, and zinc nitrate, Zn and Mn The water-soluble metal salt compound is mixed in the phosphor suspension and stirred.
(Ii) A phosphate of at least one metal among alkaline earth metals, Zn and Mn is generated in the suspension, and the generated metal phosphate is deposited on the phosphor surface.
(Iii) Remove moisture.

Also, a preferable example of the other example of the surface treatment, the silica coating, a method of precipitating SiO ₂ by neutralizing water glass, a method of surface treatment obtained by hydrolyzing alkoxysilane (e.g. In view of enhancing dispersibility, a method of subjecting a hydrolyzed alkoxysilane to a surface treatment is preferable.

-Method for mixing phosphors The method for mixing phosphor particles in the sealing material is not particularly limited. For example, when a curable material is used as the sealing material, the phosphor particles need only be post-mixed with the curable material as long as the phosphor particles are well dispersed. That is, a curable material and a phosphor are mixed, a curable material containing the phosphor is prepared, a curable material containing the phosphor is applied, and a phosphor-containing portion such as the sealing portion 23 is applied. Can be produced. Further, for example, when hydrolysis / polycondensation of alkyl alkoxysilane is used as a curable material, if the aggregation of phosphor particles is likely to occur in the curable material, the reaction solution containing the raw material compound before hydrolysis is used. When phosphor particles are mixed in advance and subjected to hydrolysis and polycondensation in the presence of the phosphor particles, a part of the surface of the particles is subjected to silane coupling treatment, and the dispersion state of the phosphor particles is improved.

  Some phosphors are hydrolyzable, but when the above-mentioned alkylalkoxysilane hydrolyzate / polycondensate is used as a curable material, the moisture in the fluid state before coating is silanol. Since it exists potentially as a body and there is almost no free water, such a phosphor can be used without being hydrolyzed. Further, if the curable material after hydrolysis / polycondensation is used after being subjected to dehydration / dealcoholation treatment, there is also an advantage that the combined use with such a phosphor becomes easy.

  In addition, when the hydrolysis / polycondensation product of the alkylalkoxysilane is used as a curable material, and phosphor particles or inorganic particles are contained in the curable material, an organic coating is provided on the particle surface to improve dispersibility. It is also possible to perform modification with a ligand. Other addition-type silicone resins are susceptible to curing inhibition by such organic ligands, and there are cases where particles subjected to such surface treatment cannot be mixed and cured. This is because the platinum-based curing catalyst used in the addition reaction type silicone resin has a strong interaction with these organic ligands, loses the hydrosilylation ability, and causes poor curing. Such poisonous substances include organic compounds containing multiple bonds, such as organic compounds containing N, P, S, etc., ionic compounds of heavy metals such as Sn, Pb, Hg, Bi, As, acetylene groups, etc. Amines, vinyl chloride, sulfur vulcanized rubber) and the like. On the other hand, the hydrolysis / polycondensation product of the alkylalkoxysilane is based on a condensation-type curing mechanism that hardly causes inhibition of curing by these poisoning substances. For this reason, the hydrolysis / polycondensation product of the alkylalkoxysilane described above has a high degree of freedom in mixing with fluorescent components such as phosphor particles and inorganic particles whose surface has been modified with an organic ligand, as well as complex phosphors. It is large and has excellent characteristics as a phosphor binder and a transparent material with high refractive index nanoparticles.

-Content rate of fluorescent substance The content rate of the fluorescent substance in the sealing part 23 is arbitrary unless the effect of this invention is impaired remarkably, and can be freely selected by the application form. However, when the phosphor is used, the total amount of the phosphor in the sealing portion 23 is usually 0.1% by weight or more, preferably 1% by weight or more, more preferably 5% by weight or more, and usually 35% by weight or less. Preferably it is 30 weight% or less, More preferably, it is 28 weight% or less.
In general, when a light emission color of light guided from the semiconductor light emitting element 21 and a light emission color of the phosphor are mixed to obtain a desired light emission color in the light emitting unit 2, the sealing part is included in light emitted from the semiconductor light emitting element 21 23 is partially transmitted, so that the phosphor content is low and becomes a region near the lower limit of the above range. On the other hand, when all the light emitted from the semiconductor light emitting element 21 is converted into a phosphor emission color to obtain a desired emission color in the light emitting unit 2, a high concentration phosphor is preferable, and the phosphor content is in the above range. It is an area near the upper limit of. If the phosphor content is higher than this range, the coating performance may be deteriorated, or the utilization efficiency of the phosphor may be lowered due to the optical interference action, and the luminance may be lowered. On the other hand, if the phosphor content is less than this range, wavelength conversion by the phosphor is insufficient, and the target emission color may not be obtained in the light emitting unit 2.

  However, the content ratio of the phosphor is particularly suitable for obtaining white light. Therefore, the specific phosphor content in the sealing portion 23 varies depending on the target color, the luminous efficiency of the phosphor, the color mixture format, the specific gravity of the phosphor, the coating film thickness, and the shape of the sealing portion 23, and is not limited thereto. .

  In addition, if the phosphor composition is specified, the phosphor content is determined by removing the silicon component as silicofluoric acid by hydrofluoric acid treatment after removing the carbon component after calcination of the phosphor-containing sample, Dissolve the residue in dilute sulfuric acid to make the main component metal element into an aqueous solution, quantify the main component metal element by known elemental analysis methods such as ICP, flame analysis, and fluorescent X-ray analysis, and calculate the phosphor content by calculation. You can ask. In addition, if the phosphor shape and particle size are uniform and the specific gravity is known, a simple method can be used in which the number of particles per unit area is obtained by image analysis of the cross-section of the coating and converted into the phosphor content.

(2-3-2-2. Inorganic particles)
The sealing material may further contain inorganic particles for the purpose of improving optical characteristics and workability and for the purpose of obtaining any of the following effects [1] to [5]. In addition, inorganic particle | grains may use only 1 type and may use 2 or more types together by arbitrary combinations and a ratio.

[1] By including inorganic particles as a light scattering agent in the sealing material, the sealing portion 23 can be used as a scattering portion. In this case, the light transmitted from the semiconductor light emitting element 21 can be scattered by the sealing portion 23 that is the scattering portion, and the directivity angle of the light emitted from the sealing portion 23 to the outside can be widened. If inorganic particles are contained as a light scattering agent in combination with the phosphor, the amount of light hitting the phosphor can be increased and the wavelength conversion efficiency can be improved.
[2] By causing the sealing material to contain inorganic particles as a binder, occurrence of cracks in the sealing portion 23 can be prevented.
[3] By containing inorganic particles as a viscosity modifier in the sealing material, the viscosity of the sealing material can be increased.
[4] By containing inorganic particles in the sealing material, shrinkage of the sealing portion 23 can be reduced.
[5] By including inorganic particles in the sealing material, the refractive index of the sealing portion 23 can be adjusted, and the light extraction efficiency can be improved.

However, when the sealing material contains inorganic particles, the effect obtained depends on the type and amount of the inorganic particles.
For example, ultrafine silica particles having a particle diameter of about 10 nm, fumed silica (dry silica. For example, “Nippon Aerosil Co., Ltd., trade name: AEROSIL # 200”, “Tokuyama Co., Ltd., trade name: Leolo Seal”, etc. ), The thixotropic property of the sealing material is increased, and thus the effect [3] is great.
Further, for example, when the inorganic particles are crushed silica or spherical silica having a particle size of about several μm, there is almost no increase in thixotropic property, and the function as an aggregate of the member containing the inorganic particles is the center. The effects [2] and [4] are great.
In addition, for example, when using inorganic particles having a particle size of about 1 μm, which has a refractive index different from that of other compounds used for the sealing material (the curable material such as the inorganic material and / or the organic material), the compound Since the light scattering at the interface between the inorganic particles and the inorganic particles increases, the effect [1] is great.
In addition, for example, the median particle size is usually 1 nm or more, preferably 3 nm or more, and usually 10 nm or less, preferably 5 nm or less, specifically, the emission wavelength or less, which has a larger refractive index than other compounds used for the encapsulant. When the inorganic particles having a particle size of are used, the refractive index can be improved while maintaining the transparency of the member containing the inorganic particles, and thus the effect [5] is great.

  Accordingly, the type of inorganic particles to be mixed may be selected according to the purpose. Moreover, the kind may be single and may combine multiple types. Moreover, in order to improve dispersibility, it may be surface-treated with a surface treatment agent such as a silane coupling agent.

-Types of inorganic particles Examples of the types of inorganic particles used include inorganic oxide particles such as silica, barium titanate, titanium oxide, zirconium oxide, niobium oxide, aluminum oxide, cerium oxide, yttrium oxide, and diamond particles. However, other substances can be selected according to the purpose, and the present invention is not limited to these.

  The form of the inorganic particles may be any form such as powder, slurry, etc., depending on the purpose, but if it is necessary to maintain transparency, the refractive index of other materials contained in the member containing the inorganic particles is set. It is preferable to add them to the sealing material as water-based or solvent-based transparent sols.

-Median particle diameter of inorganic particles The median particle diameter of these inorganic particles (primary particles) is not particularly limited, but is usually about 1/10 or less of the phosphor particles. Specifically, those having the following median particle diameter are used according to the purpose. For example, if inorganic particles are used as the light scattering material, the median particle size is usually 0.05 μm or more, preferably 0.1 μm or more, and usually 50 μm or less, preferably 20 μm or less. For example, if inorganic particles are used as the aggregate, the median particle diameter is preferably 1 μm to 10 μm. For example, if inorganic particles are used as a thickener (thixotropic agent), the median particle size is preferably 10 to 100 nm. For example, if inorganic particles are used as the refractive index adjuster, the median particle size is preferably 1 to 10 nm.

-Mixing method of inorganic particles The method of mixing inorganic particles is not particularly limited. Usually, it is recommended to mix while defoaming using a planetary stirring mixer or the like in the same manner as the phosphor. For example, when mixing small particles that easily aggregate, such as Aerosil, after mixing the particles, break up the aggregated particles using a bead mill or three rolls if necessary, then mix large particles such as phosphor You may mix an ingredient.

-Content rate of inorganic particle The content rate of the inorganic particle in a sealing material is arbitrary unless the effect of this invention is impaired remarkably, and can be freely selected by the application form. However, the content of the inorganic particles in the member containing the inorganic particles is preferably selected according to the application form. For example, when inorganic particles are used as the light scattering agent, the content in the member is preferably 0.01 to 10% by weight. For example, when inorganic particles are used as the aggregate, the content in the member is preferably 1 to 50% by weight. For example, when using inorganic particles as a thickener (thixotropic agent), the content in the member is preferably 0.1 to 20% by weight. For example, when inorganic particles are used as the refractive index adjuster, the content in the member is preferably 10 to 80% by weight. If the amount of inorganic particles is too small, the desired effect may not be obtained, and if it is too large, various properties such as adhesion, transparency and hardness of the cured product may be adversely affected.

  In addition, the content rate of an inorganic particle can be measured similarly to the content rate of the above-mentioned fluorescent substance.

  In this embodiment, the sealing part 23 shall be comprised by disperse | distributing fluorescent substance in the transparent sealing material.

(2-4. Other matters regarding the light emitting section)
In the semiconductor light emitting device 100, a plurality of light emitting units 2 are provided. In the present embodiment, an example in which four light emitting units 2 are provided as shown in FIG. 1 is described, but the number of light emitting units 2 is not limited to four as long as the number is two or more. By providing a plurality of light emitting units 2 in this manner, a surface light emitter suitable for illumination use can be obtained.

Moreover, the light emitted from the light emitting part 2 provided with two or more may be the same, and may differ. For example, when the semiconductor light emitting device 100 is configured as a blue, green, or red light emitting device, the semiconductor light emitting element 21 and the phosphor are selected so that blue light, green light, or red light is emitted from all the light emitting units 2, respectively. do it. When the semiconductor light emitting device 100 is configured as a white light emitting device, the semiconductor light emitting element 21 and the phosphor are selected so that one of the light emitting units 2 emits blue light, one of which is green, and the remaining light is red. The light mixture may be white. When the colors of the plurality of light emitting units 2 are different from each other as described above, the light intensity of these light emitting units 2 is independently adjusted by an external dimming circuit so that the color tone of light emitted from the semiconductor light emitting device 100 can be varied. There are advantages that can be done. Further, for example, the white light emitting device may be configured such that any one of the plurality of light emitting units 2 is white and the other is a combination selected from red, blue, green, and light bulb color. In this case, the light emitted from the semiconductor light emitting device 100 can be mixed at a shorter distance than when only a single color is mixed, and a thinner dimmable lighting device can be obtained.
In the present embodiment, it is assumed that white light is emitted from the semiconductor light emitting device 100 by the color mixture.

  There is no restriction as to where the light emitting unit 2 is provided on the wiring board 1, and the light emitting unit 2 can be arbitrarily set according to the application of the semiconductor light emitting device 100. In the semiconductor light emitting device 100 of the present embodiment, since the light emitting unit 2 is configured without using a package, the distance between the light emitting units 2 can be reduced, and accordingly, the distance between the semiconductor light emitting elements 21. Therefore, unevenness in luminance of light emitted from the semiconductor light emitting device 100 can be suppressed.

(3. Action)
According to the semiconductor light emitting device 100 as described above, the light emitted from the semiconductor light emitting element 21 is wavelength-converted by the phosphor in the sealing portion 23 and emitted from the light emitting portion 2 to the outside of the semiconductor light emitting device 100. At this time, if the light emitted from each light emitting unit 2 is different, light of a color (white in the present embodiment) obtained by mixing the light emitted from each light emitting unit 2 is emitted from the semiconductor light emitting device 100. Will be.

  In addition, the semiconductor light emitting device 100 of this embodiment includes a plurality of light emitting units 2 and the colors of light emitted from the respective light emitting units 2 are different. For this reason, the color tone of the light emitted from the semiconductor light emitting device 100 can be adjusted by controlling the intensity of the light emitted from the semiconductor light emitting element 21 for each light emitting unit 2. For example, when it is desired to emit reddish white light from the semiconductor light emitting device 100, the power supplied to the semiconductor light emitting element 21 in the light emitting unit 2 corresponding to the red light is supplied to the other light emitting units 2. What is necessary is just to control so that it may become large compared with the electric power supplied to the semiconductor light emitting element 21 in the inside. As a result, the color deviation of the semiconductor light emitting device 100 due to phosphor deterioration during long-term use, etc., and the adjustment of the color tone according to the life rhythm and usage environment can be easily performed, and a more comfortable illumination light source can be obtained. Is possible.

  By the way, paying attention to the use as a white light source, when the semiconductor light emitting device 100 is used as a general illumination use or a white light source with variable color tone, the light emission wavelength of the semiconductor light emitting element 21 is light from near ultraviolet to ultraviolet. It is particularly preferred. In this case, the specific numerical value of the peak emission wavelength of the light emitted from the semiconductor light emitting element 21 is usually 350 nm or more, preferably 380 nm or more, and usually 430 nm or less, preferably 420 nm or less. Further, it is particularly preferable to select phosphors that convert near-ultraviolet to ultraviolet light into red, blue, and green, respectively. The white light source obtained by combining these is a white light source that is blue-excited in a region where the color temperature is low, such as a light bulb color with a strong redness, with little variation in the average color rendering index Ra and light emission efficiency when the color tone is changed. Less decrease in luminous efficiency. As a result, unnecessary luminance change, drive voltage fluctuation, and color rendering index decrease due to dimming are unlikely to occur, and the load on the dimming circuit design is reduced, and an inexpensive and high-quality lighting device can be configured.

(4. Manufacturing method)
In order to manufacture the semiconductor light emitting device 100, for example, a dam forming step for providing the dam 22 on the wiring substrate 1 and a sealing portion coating step for coating the sealing portion 23 on the wiring substrate 1 are performed. Just do it. Hereinafter, this manufacturing method will be described.

(4-1. Weir formation process)
To form the semiconductor light emitting device 100, first, the wiring substrate 1 is prepared. Usually, after the semiconductor light emitting element 21 is disposed on the wiring substrate 1, the weir 22 is provided on the wiring substrate 1. However, the semiconductor light emitting element 21 may be arranged on the wiring substrate 1 after the weir 22 is provided and before the sealing portion 23 is applied.

  The means for providing the weir 22 is not limited, but normally, the material of the weir 22 is arranged at a desired site on the wiring board 1 so that a desired shape is drawn by the material to form the weir 22. In this case, although there is no restriction | limiting in the drawing method, For example, drawing methods, such as an inkjet and a dispenser; Printing methods, such as intaglio printing, relief printing, lithographic printing, stencil printing (screen printing, etc.); it can. Of these, a drawing method using a dispenser, screen printing, and a resist method are preferable.

  A dispenser is a device that quantitatively measures a liquid material and discharges it quantitatively. This apparatus normally generates an air pulse whose pressure, time, etc. are controlled with high precision, and this pushes out the material injected into a container such as a syringe from the nozzle tips of various sizes and shapes. In this case, the temperature, humidity, pressure and the like are not limited, but are usually 0 ° C. or higher and 100 ° C. or lower, humidity 5RH% or higher and 90RH% or lower, and pressure 1 Pa or higher and 200kPa or lower.

  Moreover, in a dispenser, the material discharged from the nozzle tip is dripped and drawn on the object. This drawing can be performed manually or automatically. However, from the viewpoint of dimensional stability, an automatic dispensing stage (an apparatus capable of directly drawing an electronic drawing by storing a two-dimensional movement or controlled by a computer) or the like may be used. preferable.

Moreover, after inject | pouring material into containers, such as a syringe, it is preferable to fully perform foam removal operation (defoaming operation). When bubbles are mixed in the material, the ejection from the nozzles becomes intermittent during drawing, which may lead to a reduction in drawing accuracy. It is also desirable to remove bubbles of about 100 μm or less that are difficult to see with the naked eye.
Although there is no restriction | limiting in the method of defoaming operation, For example, a material can be centrifuged under a vacuum (autorotation, revolving type), or it can defoam by applying an ultrasonic wave. Moreover, it is preferable to process before inject | pouring into containers, such as a syringe, and / or after inject | pouring into a syringe etc. Furthermore, since bubbles may be mixed when the nozzle is connected to the syringe, it is also preferable to discharge from the nozzle sufficiently before drawing to stabilize the discharge.

  The dimensions of the weir 22 can be controlled by the operating conditions of the dispenser and the characteristics of the material. For example, the height of the weir 22 can be increased as the viscosity of the material is higher, the thixotropy of the material is higher, the nozzle diameter is larger, the drawing speed is lower, and the viscosity decrease during curing is smaller. . Further, it is possible to further increase the thickness by performing overcoating. For example, the width of the weir 22 can be increased as the viscosity of the material is lower, the thixotropy is lower, the nozzle diameter is larger, the speed is slower, and the viscosity is decreased. Further, by performing multiple drawing adjacent in the horizontal direction, it can be further widened. Further, when a dispenser having a plurality of adjacent nozzles is used, it is possible to perform multiple drawing that is adjacent in the horizontal direction by one drawing.

  Screen printing is a kind of printing technique called stencil printing, and is a printing method in which a large number of fine holes are provided in a plate and a liquid material passing through the holes is transferred by pressure. Specifically, a screen composed of a mesh and a mask is stacked on a printing target, and the screen is pressed on the stage while supplying materials from above. Thereby, the material is ejected from the mesh that hits the opening of the mask, and the same image as the mask opening is formed.

  The dimensions of the weir 22 can be controlled by operating conditions of screen printing. For example, the height of the weir 22 can be increased as the mesh screen is thicker or the aperture ratio is larger. Further, it is possible to make it higher by repeatedly printing. Note that the width of the weir 22 usually follows the dimensions of the mask.

  The resist method is a method in which a resist material is used as the material of the weir 22, this resist material is applied to the wiring board 1, and a desired image is formed by development. As the resist material, either a positive type or a negative type can be used. As the positive resist material, for example, a photosensitive positive resin or a resin composition can be used. On the other hand, as the negative resist material, for example, a photopolymerizable and / or thermally polymerizable resin or resin composition can be used. As a method for applying the resist material to the wiring substrate 1, conventionally known methods such as a spinner method, a wire bar method, a flow coating method, a slit and spin method, a die coating method, a roll coating method, a spray coating method, etc. Can be done. After applying the resist material to the wiring board 1, for example, when using a photosensitive resist material, a desired image can be formed after the resist application through an exposure process, a development process, a heat treatment process, and the like.

  In addition, instead of curing the weir 22 on the surface of the wiring substrate 1, a pre-shaped weir 22 is prepared, and the prepared weir 22 is mounted on the wiring substrate 1 so that the weir 22 is provided on the wiring substrate 1. May be. Examples of the molding method include known molding methods such as transfer molding, injection molding, imprinting, and stamping. In particular, when the weir 22 is formed of a thermoplastic resin or the like, it is preferable to employ the molding method as described above. However, even when the weir 22 is formed of a thermoplastic resin, if the heat resistance of the wiring board 1 can be sufficiently ensured, the molten thermoplastic resin is extruded onto the wiring board 1 from the high-temperature nozzle and the weir 22 is formed. May be drawn. However, since the thermoplastic resin usually has a high melting point exceeding 200 ° C., the wiring substrate 1 is first molded into the shape of the target weir 22 so that unnecessary stress is not generated between the wiring substrate 1 and the weir 22. A method of heat-sealing or adhering to is preferable.

Among the methods described above, it is preferable to provide the weir 22 with a dispenser. When using a dispenser, since the process is not complicated, it is easy to design a variety of designs according to the order, and because the surface of the weir 22 does not have a ridgeline and the surface can be formed only with a smooth convex curved surface, This is because the light extraction effect at the boundary between the sealing portion 23 and the weir 22 is also excellent.
Moreover, the said method can also be implemented combining 2 or more methods.

  In addition, when forming the weir 22 in the shape which does not have a ridgeline as mentioned above, after forming the weir 22 by the said method, the surface of the weir 22 is heat-melted by the method etc., for example. It is preferable to perform a curved surface treatment.

(4-2. Sealing part coating step)
After the weir formation step, a sealing portion coating step is performed in which the sealing portion 23 is coated on the wiring board 1 by applying a sealing material.
When the sealing portion 23 is applied, there is no limitation on the method for applying the sealing material. As examples of the coating method, a cast method, a spin method, a dip method, and the like can be used. The casting method is a method in which a predetermined amount of a liquid sealing material is placed on an application surface and spread automatically or with a brush. The spin method is a method in which a liquid sealing material placed on a coating surface is made to have a uniform film thickness by centrifugal force. Further, the dipping method is a method in which a predetermined amount of sealing material is adhered to the coating surface by immersing the coating surface in a liquid sealing material and pulling it up at a constant speed. Among them, the casting method is preferable for applying the sealing material with a uniform film thickness in the range surrounded by the weir 22. In other methods, liquid accumulation is likely to occur in the weir 22 and it is difficult to achieve a uniform film thickness, which may lead to deterioration of the light guide characteristics in the sealing portion 23.

Although there is no restriction | limiting in the application | coating conditions of a casting method, Usually, a predetermined amount of sealing materials are discharged to a predetermined position using a dispenser. At this time, it is preferable that a liquid sealing material whose viscosity is adjusted to be low is measured and discharged by a dispenser, and the film surface is made uniform (leveling) by taking time or applying vibration. In order to make the film surface uniform, it is also useful to use a multi-nozzle of a dispenser.
There are no restrictions on the conditions such as temperature, humidity, pressure, etc. when the sealing material is applied by the casting method, but usually the temperature is 0 ° C. or more and 100 ° C. or less, the relative humidity is 5% or more and 90% or less, and the pressure is 1 Pa or more and 200 kPa. The following is preferred. Also, an environment that causes condensation is not preferable.

  Although there is no limitation on the thickness of the coating film to be formed when applying the sealing material, it is usually 300 μm or more, preferably 400 μm or more, particularly 500 μm or more, and usually 5 mm or less, especially 2 mm or less, particularly 1 mm or less. Is preferred. If the coating is too thin, the amount of light that can be guided is limited, and it may become dark, or if the phosphor is dispersed, wavelength conversion may be insufficient. There is a possibility that the charm as will fade.

However, when the sealing portion 23 is applied, the sealing material is normally controlled by using the weir 22 to control the formation position of each region of the coating film. That is, as a result of the sealing material being applied so as to be blocked by the dam 22, the planar shape of the coating film formed (that is, the planar shape of the sealing portion 23 to be coated) is The planar shape is controlled for each region partitioned by the weir 22 according to the drawn shape.
Thus, by performing the sealing portion coating step after the dam formation step, the planar shape of the coating film of the sealing material (that is, the planar shape of the sealing portion 23) is provided by the dam 22 provided in advance. It can be designed easily and freely. In addition, the coating film can be easily and freely designed by using the sealing material that is different for each region partitioned by the weir 22 by using the weir 22. For this reason, it is possible to freely design the sealing portion 23 without changing the shape and the standard significantly.

  After applying the sealing material, the sealing material applied on the wiring substrate 1 is cured to form the sealing portion 23. As a curing method, an appropriate condition may be arbitrarily selected according to the type of the sealing material. Sealing materials are usually classified into one of photo-curing property, thermosetting property, and photo-thermosetting property, and therefore, conditions may be set according to the type of each sealing material.

For example, when the sealing material is photocurable, light having a wavelength suitable for curing may be irradiated. Hereinafter, a specific example will be described.
The photo-curable sealing material includes acrylic, methacrylic, and epoxy types depending on the structure of the portion that is polymerized and cured. Among these, acrylic and methacrylic ones are usually used together with a radical-generating polymerization initiator. Therefore, the acrylic and methacrylic sealing material may be cured by irradiating light (for example, ultraviolet rays) having a wavelength suitable for generating radicals of the polymerization initiator. Examples of this radical-generating polymerization initiator include alkylphenone-based, acylphosphine oxide-based, titanocene-based, oxime ester-based, and the like. These may be used alone or in combination of two or more These combinations and ratios may be used together. Furthermore, a polymerization accelerator such as aminobenzoate may be used in combination.

Some epoxy-based sealing materials are cured only by light, and others are cured by either light or heat. Usually, when this epoxy-based sealing material is cured, a cation-generating polymerization initiator is used in combination, and light and / or heat having a wavelength suitable for cation generation of the polymerization initiator is applied and cured. Examples of the cation-generating polymerization initiator include sulfonium salts and iodonium salts, which can be used alone or in combination of two or more in any combination and ratio. Among them, a salt of PF ₆ (hexafluorophosphate) or the like is preferable when it is cured mainly only by light, and a salt of SbF ₆ (hexafluoroantimony) when it is cured by light or heat. Etc. are suitable.

  On the other hand, when the encapsulant is thermosetting, the encapsulant is applied and then cured by heating. Although there is no restriction | limiting in the system of a heating, For example, the system of using a hot air, using the electric heat from a heat block, using a microwave, using a radiant heat, etc. are mentioned. Usually, it is preferable to use a stationary box oven, a hot plate, a microwave oven, a far-infrared furnace, or the like.

  When the sealing material has a polycondensation type curing mechanism, a component that volatilizes with polymerization is usually present in the sealing material. Since the polymerization can be further accelerated by removing these volatile components, it is preferable that the apparatus used for curing has a means for replacing the atmosphere during curing with fresh gas. Especially in the case of a dehydration-condensation type sealing material, for example, the replacement of the curing reflux gas is performed periodically, the curing is performed under the circulation of the gas, the circulation gas is dried, or the curing reflux drying agent is disposed. Is preferable. However, when the surface property or internal stress of the cured material of the sealing material is adjusted by controlling the curing rate, it is preferable to appropriately control the replacement amount of the atmospheric gas.

  In addition, when heating is performed using a heating furnace, any of sheet processing, batch processing, moving belt, continuous processing for passing through the furnace, and processing for putting the number of persons in charge into the furnace together may be used. Can be selected according to gender. Moreover, as a heating furnace, a tunnel furnace, a box furnace, etc. are used suitably, for example.

By the way, some materials of the weir 22 and the sealing portion 23 may shrink due to curing. Therefore, it is preferable that these materials have resistance to compression and tension. Hereinafter, this point will be described with an example.
Usually, the wiring board 1 has different thermal expansion coefficients with respect to the weir 22 and the sealing portion 23. For example, when cured by heat at the time of thermosetting, the cured sealing portion 23 may contract when cooled to room temperature. When the constituent material of the sealing portion 23 is larger in the shrinkage tendency than the constituent material of the wiring substrate 1, a large tensile stress is applied to the sealing portion 23. At that time, if the stress cannot be relieved, the force concentrates on a portion having a weak adhesive force, and peeling or cracking may occur. Further, even when peeling or cracking does not occur, the wiring board 1 may be deformed. If peeling, destruction, deformation, or the like occurs, light guided there may be blocked, and the sealing portion 23 may not function as a light guide member. Further, normally, the semiconductor light emitting element 21 generates heat. For this reason, in the immediate vicinity of the semiconductor light emitting element 21, a large stress is generated due to a difference in thermal expansion coefficient between the material constituting the semiconductor light emitting element 21 and the constituent material of the sealing portion 23, and adhesion failure or the like easily occurs. Become.
From the above viewpoint, it is preferable that the material itself of the sealing portion 23 greatly relieves stress. Specifically, those having low hardness and / or rubber properties are preferred.

  As specific physical property values, the material of the sealing portion 23 has a durometer type A hardness measurement value (Shore A) of usually 5 or more, preferably 7 or more, more preferably 10 or more, and usually 90 or less. , Preferably 80 or less, more preferably 70 or less. By having the hardness measurement value in the above range, the semiconductor light emitting device 100 can obtain an advantage that cracks are hardly generated in the sealing portion 23 and excellent in reflow resistance and temperature cycle resistance.

  Further, when the semiconductor light emitting device 100 is used in a state where it is directly exposed, the material of the sealing portion 23 preferably has a mechanical strength sufficient to prevent the wire from being cut or the semiconductor light emitting element from being damaged by an external force. . In this case, the hardness measurement value (Shore D) by durometer type D is usually 5 or more, preferably 7 or more, more preferably 10 or more, and usually 80 or less, preferably 70 or less, more preferably 60 or less. . However, such a high-hardness member may be inferior in reflow resistance and temperature cycle resistance compared to the above-mentioned low-hardness member, so low hardness near the semiconductor light emitting element and wiring, and high hardness in the outer periphery. It is good also as a layer structure using a member. For example, the condensation type silicone material having one or more of the above-described features <1> to <3> is excellent in adhesiveness, and thus can be used for a long period without delamination even as a layer structure.

(4-3. Other steps)
Other steps may be performed either before, during or after the dam formation step and the sealing portion coating step.
For example, when the sealing part 23 is composed of two or more layers, the sealing part coating step may be repeated.
Further, for example, the surface treatment may be performed on the wiring board 1 before the weir 22 and the sealing portion 23 are formed. Examples of such surface treatment include, for example, formation of an adhesion improving layer using a primer or a silane coupling agent, chemical surface treatment using a chemical such as acid or alkali, plasma irradiation, ion irradiation or electron beam irradiation. Examples thereof include physical surface treatment used, surface roughening treatment such as sand blasting, etching and fine particle coating. Other surface treatments for improving adhesion include, for example, JP-A-5-25300, Nogamihiro Inagaki “Surface Chemistry” Vol.18 No.9, pp21-26, Kuroo Kurosaki “Surface Chemistry” ”Vol.19 No.2, pp44-51 (1998), etc., known surface treatment methods. Furthermore, ozone treatment can be performed.

(5. Main advantages of this embodiment)
As described above, the semiconductor light emitting device 100 of this embodiment can be manufactured at low cost without using a package.
In addition, since the semiconductor light emitting device 100 of the present embodiment does not require a package, it can be easily reduced in thickness and can be favorably applied to a thin light emitting device.

Furthermore, the semiconductor light emitting device 100 of this embodiment has a weir 22, and since the height H ₁ of the weir 22 is higher or substantially equal to the height H ₂ of the sealing portion 23, sealing in the production Precise control of physical properties such as viscosity and thixotropy of the material is unnecessary, and the semiconductor light emitting element 21 can be appropriately sealed using a wide range of sealing materials.

  In addition, since the semiconductor light emitting device 100 of this embodiment includes a support having a high thermal conductivity as a support for the wiring substrate 1, it is possible to efficiently dissipate heat generated from the semiconductor light emitting element 21 to the outside. is there. In particular, since the semiconductor light emitting element 21 is directly provided on the wiring board 1, it is basically unnecessary to form wiring on the back side of the wiring board 1, and for this reason, a heat sink is provided directly on the back surface of the wiring board 1. It is possible to further increase the efficiency of the heat dissipation.

  Further, when the sealing portion is formed in a convex shape as in the technique described in Patent Document 2, if a plurality of semiconductor light emitting elements are used, the lens surface becomes non-uniform depending on the position of the semiconductor light emitting elements, and the lens effect varies. However, if the sealing part 23 is formed on a flat surface or a concave surface as in the present embodiment, such variation does not occur, and the light emitted from the light emitting part 2 can be accurately controlled.

  In addition, since the weir 22 in the semiconductor light emitting device 100 of the present embodiment is formed in a shape having no ridgeline, it is possible to improve the light extraction effect of the light reflected from the weir 22 and coming out of the light emitting unit 2. it can.

[Other Embodiments]
The semiconductor light-emitting device and the manufacturing method thereof according to the present invention are not limited to those in the above-described embodiments, and can be arbitrarily modified and implemented without departing from the gist of the present invention.
For example, the dam 22 may be formed so as to be shared by each light emitting unit 2 without being provided independently for each light emitting unit 2. As a specific example, as shown in FIG. 6, the weirs 22 may be formed in a lattice shape, and the sealing portion 23 may be provided in a region surrounded by the weirs 22. FIG. 6 is a plan view schematically showing a semiconductor light emitting device as another embodiment of the present invention, and the same reference numerals as those in FIGS.

  Further, for example, the semiconductor light emitting device 100 may be provided with a member other than the wiring substrate 1 and the light emitting unit 2. As a specific example, as shown in FIG. 7, an orientation element 25 such as a lens sheet may be provided in the upper part of the light emitting unit 2, that is, in a portion where light is emitted from the light emitting unit 2. FIG. 7 is a cross-sectional view schematically showing one longitudinal section of a light emitting unit of a semiconductor light emitting device as another embodiment of the present invention, and the same reference numerals as those in FIG. Show.

Further, for example, the phosphor 23 may not be contained in the sealing portion 23, and the light emitted from the semiconductor light emitting element 21 may be emitted from the light emitting portion 2 without wavelength conversion.
In addition, as long as at least one of the plurality of light emitting units included in the semiconductor light emitting element 21 has the configuration of the light emitting unit 2 described above, the other light emitting units may have other configurations. As described above, it is preferable that each of the plurality of light emitting units has the configuration of the light emitting unit 2.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following embodiments, and may be arbitrarily modified and implemented without departing from the gist of the present invention. Can do.

[1. Preparation of sealing material liquid]
[1-1] Synthesis example 1
390 g of Silanol Dimethyl Silicone Oil XC96-723 at both ends made by Momentive Performance Materials Japan GK, 10.41 g of methyltrimethoxysilane, and 0.280 g of zirconium tetraacetylacetonate powder as a catalyst, stirring blade Were weighed in a 500 ml three-necked Kolben equipped with a fractionating tube, a Dimroth condenser and a Liebig condenser, and stirred at room temperature for 15 minutes until the coarse particles of the catalyst were dissolved. Thereafter, the temperature of the reaction solution was raised to 100 ° C. to completely dissolve the catalyst, and initial hydrolysis was performed while stirring at 500 rpm for 30 minutes at 100 ° C. under total reflux.

Subsequently, the distillate was connected to the Liebig condenser side, nitrogen was blown into the liquid with SV20, and methanol, water, and low-boiling silicon components of by-products were distilled off accompanied with nitrogen for 1 hour at 100 ° C. and 500 rpm. Stir. Subsequently, the nitrogen flow rate was increased to SV40 and the polymerization reaction was continued for 4.7 hours while the temperature was raised and maintained at 130 ° C. while blowing into the solution to obtain a reaction solution having a viscosity of 158.7 mPa · s. Here, “SV” is an abbreviation for “Space Velocity” and refers to the volume of blown volume per unit time. Thus, SV20 refers to blowing N ₂ in a volume 20 times that of the reaction solution in one hour.

  Nitrogen blowing was stopped and the reaction solution was once cooled to room temperature, then transferred to an eggplant-shaped flask, and methanol and moisture remaining in a minute amount at 120 ° C. and 1 kPa for 20 minutes on an oil bath using a rotary evaporator. The low boiling silicon component was distilled off to obtain a sealing material liquid as a solvent-free liquid sealing material having a viscosity of 260 mPa · s.

  2 g of the above-mentioned sealing material liquid was put into a Teflon (registered trademark) petri dish having a diameter of 5 cm, held at 110 ° C. for 1 hour in a breeze in a breeze, and then held at 150 ° C. for 3 hours. An independent circular transparent elastomeric membrane was obtained.

<Preparation of sealing material liquid for phosphor-containing part>
Using the sealing material liquid synthesized in Synthesis Example 1 described above, the sealing material liquid and the phosphor were weighed in a total amount of 2 g scale with reference to the blending ratio in Table 1 below, and then stirred and deaerated by Shinkey A liquid material (hereinafter referred to as “phosphor-containing part forming liquid A”) for forming a phosphor-containing part was obtained by mixing with “Rubber Ryotaro AR-100”.
In addition, except that silicone resin LPS2410 manufactured by Shin-Etsu Chemical Co., Ltd. was used as the sealing material liquid and the amount of Aerosil RX200 used per 1 g of the sealing material liquid was changed to a mixing ratio of 0.05 g, the total amount was scaled to 2 g. Thus, a liquid material for forming the phosphor-containing part (hereinafter referred to as phosphor-containing part forming liquid B) was obtained.

[1-2] Preparation of weir (high refractive index transparent) forming liquid A 4 g of high refractive index silicone resin JCR6175 manufactured by Toray Dow Corning Silicone Co., Ltd., 0.8 g of fumed silica RX200 manufactured by Nippon Aerosil Co., Ltd. Then, centrifugal defoaming and mixing were performed using a rotating / revolving mixer defoaming device. Thereafter, the container was further defoamed and mixed in a vacuum, and a weir forming liquid A was obtained as a liquid material for forming a transparent weir with a high refractive index.

[1-3] Preparation of weir forming liquid B (containing light scattering agent) 4 g of low refractive index silicone resin OE6336 manufactured by Toray Dow Corning Silicone Co., Ltd., 0% Al ₂ O ₃ fine powder “CR1 (median particle diameter 400 nm)” .8 g, fumed silica RX200 manufactured by Nippon Aerosil Co., Ltd. was weighed in a 0.7 g mixing container, and centrifugal defoaming and mixing were performed using a rotation / revolution mixer deaerator. Thereafter, the container was further defoamed and mixed under vacuum to obtain a white weir forming liquid B as a liquid material for forming a weir containing a light scattering agent.

[2. Description of operation and evaluation of specific examples]
Hereinafter, an example of manufacturing a simulated light emitting device provided with a weir and including a phosphor-containing portion will be described. In addition, although the example shown here is a simulation example which does not seal a semiconductor light emitting element, all the sealing materials of an Example can seal a semiconductor light emitting element suitably, and also with respect to durability with respect to heat and light. Since it is excellent, it is considered that the semiconductor light emitting device of the present invention can be suitably formed even on a wiring substrate on which one or a plurality of semiconductor light emitting elements are mounted. In the present invention, it is expected that a semiconductor substrate having a high luminance and a long life can be obtained by suppressing the temperature rise of the light emitting part by using a highly heat conductive metal base substrate or ceramic base substrate as the wiring substrate.

[Example 1]
[Weir coating and sealing formation]
A 3mmφ hole is drilled in a glass fiber reinforced epoxy laminate coated with white solder paste using a drill, and the outer diameter is 1cm using the above-mentioned weir formation liquid A so as to surround the hole as if it was an LED mounting part. A weir was drawn to draw a circular arc. For drawing, an automatic dispenser was used and a syringe having a nozzle diameter of 290 μm was used. At this time, the distance from the nozzle of the syringe to the substrate surface was 500 μm. The drawing speed was 10 cm / second. Furthermore, the pressure when extruding the weir forming liquid A from the syringe was set to 1.5 MPa.

Then, this was hold | maintained at 150 degreeC and atmospheric pressure for 1.0 hour in air atmosphere, and the weir was hardened. As a result, a highly refractive transparent weir having a height of 500 μm and a width of 1 mm and having no ridgeline was obtained.
After sealing the hole with chemical resistant tape from the back side of the hole, 40 μl of the phosphor-containing part forming solution A was injected into the weir containing the hole from the front side, and kept at 150 ° C. for 3 hours to cure, and the inside of the weir A phosphor-containing part having a thickness of 450 μm was formed. At this time, the phosphor-containing part forming liquid A was applied only to the inside of the weir, and did not leak to the outside of the weir and the hole. Thereafter, the chemical resistant tape was peeled off to expose the holes.

[Evaluation]
A near-ultraviolet LED having an emission wavelength of 405 nm, a driving voltage of 350 mA, an integrated emission intensity of 550 mW of 550 mW is installed in close contact immediately below the hole, and light emitted from the LED is incident on the phosphor-containing portion through the hole. The light emission state of the phosphor-containing portion and the weir was observed from the upper surface of the phosphor-containing portion.
Further, in the manner described below, for a single cured product of the encapsulant liquid (encapsulant liquid not containing the phosphor prepared in Synthesis Example 1), solid Si-NMR spectrum measurement, silanol content measurement, silicon The content rate was measured. The results are shown in Table 2.

[Analyzing Method of Resin Single Cured Forming Sealing Portion]
[Solid Si-NMR spectrum measurement and silanol content calculation]
The solid cured product of the sealing material liquid of Example 1 (sealing material liquid not containing the phosphor prepared in Synthesis Example 1) was subjected to solid Si-NMR spectrum measurement and waveform separation analysis under the following conditions. From the obtained waveform data, the half width of each peak was obtained. Also, from the ratio of the peak area derived from silanol to the total peak area, the ratio (%) of silicon atoms that are silanols in all silicon atoms is obtained, and the silanol content is determined by comparing with the silicon content analyzed separately. Asked.

<Device conditions>
Equipment: Chemagnetics Infinity CMX-400 Nuclear Magnetic Resonance Spectrometer
²⁹ Si resonance frequency: 79.436 MHz
Probe: 7.5 mmφ CP / MAS probe Measurement temperature: room temperature Sample rotation speed: 4 kHz
Measurement method: Single pulse method
¹ H decoupling frequency: 50 kHz
²⁹ Si flip angle: 90 °
²⁹ Si 90 ° pulse width: 5.0μs
Repeat time: 600s
Integration count: 128 Observation width: 30 kHz
Broadening factor: 20Hz
Reference substance: Silicone rubber for solid ²⁹ Si reference sample

<Data processing method>
512 points were taken in as measurement data, zero-filled to 8192 points, and Fourier transformed.

<Waveform separation analysis method>
For each peak of the spectrum after Fourier transform, optimization calculation was performed by a non-linear least square method using the center position, height, and half width of the peak shape created by Lorentz waveform and Gaussian waveform or a mixture of both as variable parameters.
The peak was identified with reference to AIChE Journal, 44 (5), p. 1141, 1998, etc.

[Measurement of silicon content]
A single cured product of the sealing material liquid (sealing material liquid not containing the phosphor prepared in Synthesis Example 1) is pulverized to about 100 μm, and in a platinum crucible in air at 450 ° C. for 1 hour, and then at 750 ° C. After baking for 1 hour at 950 ° C for 1.5 hours to remove the carbon component, add 10 times or more of sodium carbonate to a small amount of the resulting residue and heat with a burner to melt, cool this Demineralized water was added, and the volume was adjusted to about several ppm as silicon while adjusting the pH to about neutral with hydrochloric acid, and ICP analysis was performed using “SPS1700HVR” manufactured by Seiko Denshi.

[Example 2]
A weir and a phosphor-containing part were produced in the same manner as in Example 1 except that the white weir forming liquid B containing a light scattering agent was used as the material for forming the weir. The obtained simulated light-emitting device was evaluated in the same manner as in Example 1. The results are shown in Table 2.

[Example 3]
The weir and the phosphor-containing part were formed in the same manner as in Example 1 except that the phosphor-containing part forming liquid B was used as a material for forming the phosphor-containing part and the curing condition was 150 ° C. for 1 hour. The obtained simulated light-emitting device was evaluated in the same manner as in Example 1. Moreover, the same measurement as Example 1 was performed about the single hardened | cured material of the sealing material liquid (silicone resin LPS2410) used for preparation of the fluorescent substance containing part formation liquid B. The results are shown in Table 2.

[Reference Example 1]
Surface mounted 6 mm diameter aluminum nitride package (reflector part is silver plated) 12 flip chip type GaN-based semiconductor light emitting elements having a light emission wavelength of 405 nm are flip-bond mounted with gold bumps on the silver plated electrode, and the semiconductor light emitting device Was made. 30 μl of the same phosphor-containing part forming liquid A as in Example 1 was dropped into this semiconductor light-emitting device using a dispenser, and the liquid was generated in a desiccator box that could be depressurized and maintained at 25 ° C. and 1 kPa for 5 minutes. Entrained bubbles, dissolved air and moisture were removed. Thereafter, the forming liquid was cured by maintaining at 90 ° C. for 2 hours, then at 110 ° C. for 1 hour, and at 150 ° C. for 3 hours to obtain a semiconductor light emitting device. The obtained semiconductor light emitting device was lit by applying a current of 20 mA per chip (semiconductor light emitting element), and compared with the simulated light emitting device of the example. The results are shown in Table 2.

[Reference Example 2]
In order to investigate the heat and light resistance of the PEEK resin as the material of the white coating layer or insulating layer, a semiconductor light emitting device was prepared using the sealing material liquid obtained in Synthesis Example 1 described above, and the following continuous lighting test was performed. It was.

[1] Production of Semiconductor Light-Emitting Device A 900 μm square chip “C460-XB900” manufactured by Cree, which is a semiconductor light-emitting element, was fixed on a metal package manufactured by MC Corporation through an Au—Sn eutectic solder sheet. Wire bonding was performed from the electrode on the semiconductor light emitting device to the pin on the metal package with a gold wire. As the metal package, “3PINMETAL” manufactured by MCIO Co., Ltd. (the reflector is made of copper with silver plating 9 mmΦ, and the hermetic seal around the electrode pin is made of low melting glass) was used.
A white PEEK resin sheet obtained by cutting a Mitsubishi resin PEEK resin film “IBUKI (registered trademark)” into 2 mm squares is placed on the bottom of the package in the immediate vicinity of the semiconductor light emitting device, and the sealing obtained in Synthesis Example 1 from above is placed thereon. 40 μl of the stopping material solution was injected, and the encapsulant solution was cured in a draft drier at 90 ° C. for 2 hours, then at 110 ° C. for 1 hour, and at 150 ° C. for 3 hours to cure the PEEK resin sheet. A semiconductor light-emitting device A that emits light at a wavelength of 460 nm was manufactured.

  A semiconductor light-emitting device B that emits light at a wavelength of 405 nm was manufactured under the same conditions except that the semiconductor light-emitting element was “C405-XB405”.

  Further, the semiconductor light emitting device C without a sealing material that emits light at a wavelength of 460 nm and the semiconductor light emitting device D without a sealing material that emits light at a wavelength of 405 nm are the same as the above except that sealing with a sealing material is not performed. Produced.

  Furthermore, the following white filler-containing paste was applied to the surface of the PEEK resin sheet, cured, and the same as the semiconductor light-emitting devices C and D, except that a 2 mm square was used. Semiconductor light emitting device E (alumina coat) and semiconductor light emitting device F (titania coat) without material, and semiconductor light emitting device G (alumina coat) and semiconductor light emitting device H (titania coat) without sealing material that emits light at 405 nm Produced.

<Alumina coat>
In a mixing container, 2 g of the sealing material liquid obtained in Synthesis Example 1 above, 0.8 g of non-agglomerated type alumina (manufactured by Baikowski, trade name: CR1, median particle size 0.95 microns), and ultrafine silica ( Nippon Aerosil Co., Ltd., trade name: AEROSIL # RX200) 0.2 g was added and mixed. Using a rotation / revolution mixer deaerator, centrifugal deaeration mixing was performed to prepare a white paste.
The white paste after mixing was applied to the surface of the Mitsubishi resin PEEK resin film “IBUKI (registered trademark)” and applicator was applied, and cured in a draft drier at 150 ° C. for 1 hour to form a coating layer having a thickness of 50 μm.

<Titania coat>
A paste was prepared in the same manner as the white paste for alumina coating except that 0.6 g of rutile type titania (manufactured by Fuji Titanium Industry Co., Ltd., trade name TR700) was used instead of 0.8 g of the non-aggregated type alumina described above. A coating layer having a thickness of 50 μm was formed by the same coating film manufacturing method.

[2] Continuous lighting test A chip (semiconductor light-emitting element) was energized with a drive current of 350 mA while maintaining the temperature of the light emitting surface at 100 ± 10 ° C., and 2000 hours at a temperature of 25 ° C. and a relative humidity of 50%. Continuous lighting was performed. The appearance of the PEEK resin sheet in the sealing material after 2000 hours was visually observed and compared with immediately after lighting.

As a result, in both the semiconductor light emitting devices A and B, there was no change such as coloring in the PEEK resin sheet before and after the test.
On the other hand, in the semiconductor light emitting device in which the PEEK resin sheet is directly irradiated with light without using the sealing material, the semiconductor light emitting device C (no coating), the semiconductor light emitting device E (alumina coating), and the semiconductor light emitting which are irradiated with light having a wavelength of 460 nm None of the devices F (titania coat) changed the sheet appearance. On the other hand, the semiconductor light emitting device D (no coating) irradiated with light having a wavelength of 405 nm was partially discolored, but both the semiconductor light emitting device G (alumina coating) and the semiconductor light emitting device H (titania coating) were in appearance. There was no change. The results are shown in Table 3.

<Understanding from Examples>
The simulated light-emitting devices that did not use the packages of Examples 1 to 3 all emitted uniform white light, similar to the semiconductor light-emitting element of Reference Example 1 that used a surface-mount package. From this, it is expected that if the semiconductor light emitting device is directly sealed in the simulated light emitting devices of Examples 1 to 3 as in Reference Example 1, the light extraction efficiency is increased and the luminance is further improved.

  In Examples 1 to 3, both the addition type silicone resin and the condensation type silicone resin could be suitably used as the sealing material. When it is necessary to laminate the phosphor-containing part, it is considered that the condensed resin containing silanol in the cured product has high interlayer adhesion and can be more suitably used as a sealing material.

  In semiconductor light emitting devices, it is expected that a surface emitting light source with high brightness and high reliability can be obtained at low cost by making the wiring board highly heat conductive, mounting a plurality of semiconductor light emitting elements, and providing a plurality of light emitting portions. The Furthermore, in the semiconductor light emitting device, light emitting portions of different colors are provided, the light amount is controlled independently for each color by an external light control circuit, and these lights are mixed using a separately provided diffusion plate, etc., so that the color tone according to the purpose is obtained. It is considered dimmable.

  Furthermore, when PEEK resin is used as the white coating layer of the wiring board or the insulating layer of the metal base board, the brightness is maintained over a long period of time without causing deterioration such as coloring due to its high heat resistance from the result of Reference Example 2. It is expected that

When PEEK resin is used together with a sealing material, it is expected that it can be suitably used as a white coating material for a wiring substrate or an insulating material for a metal base substrate and a material for a weir regardless of the emission wavelength of the semiconductor light emitting device.
In addition, when used with an ultraviolet to near-ultraviolet semiconductor light-emitting element, the PEEK resin sheet is colored when irradiated with strong near-ultraviolet light directly from the semiconductor light-emitting element without passing through the sealing material. This is probably because the photo-oxidation progressed because the light-irradiated surface easily contacted oxygen. In this case, the light deterioration of the PEEK resin can be suppressed by blocking the light by coating with a white coating material having high light resistance and light shielding. As the white coating material, for example, highly durable inorganic particles and silicone binders can be selected, thereby suppressing deterioration of the white coating layer and providing a semiconductor light emitting device with excellent long-term lighting durability at low cost. I think it can be done. Furthermore, it is considered that a more suitable configuration can be obtained by adding an inorganic filler having a high thermal conductivity to a resin serving as an insulating layer or a weir material as necessary.

  The present invention can be used in any field where a semiconductor light emitting device is used. In particular, high color rendering and color reproducibility are required by using it for backlights for liquid crystal displays, lighting for houses and stores, lighting for photography, etc. It is possible to provide high-quality color-tunable illumination that is difficult to occur at low cost.

It is a top view which shows typically the semiconductor light-emitting device as one Embodiment of this invention. It is a top view which expands and typically shows one of the light emission parts of the semiconductor light-emitting device as one Embodiment of this invention. It is sectional drawing which shows typically one longitudinal cross-section of the light emission part of the semiconductor light-emitting device as one Embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for explaining a semiconductor light emitting device as one embodiment of the present invention, and is a cross-sectional view schematically showing an example of a configuration of a so-called metal-based wiring board. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure for demonstrating the semiconductor light-emitting device as one Embodiment of this invention, Comprising: It is sectional drawing which shows typically an example of a structure of what is called a ceramics-based wiring board. It is a top view which shows typically the semiconductor light-emitting device as another embodiment of this invention. It is sectional drawing which shows typically one longitudinal cross-section of the light emission part of the semiconductor light-emitting device as another embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wiring board 2 Light-emitting part 21 Semiconductor light-emitting element 22 Weir 23 Sealing part 23a Surface of sealing part 24 Bump 25 Orientation element 100 Semiconductor light-emitting device

Claims (11)

A semiconductor light emitting device having a wiring board including a support and wiring, and a plurality of light emitting units,
The light emitting unit includes one or more semiconductor light emitting elements disposed on the wiring board, an insulating weir formed on the wiring board so as to surround the semiconductor light emitting elements, and the A sealing portion that is formed in a region surrounded by a weir and seals the semiconductor light emitting element;
A height of the dam from the wiring board is substantially equal to or higher than a height of the sealing portion from the wiring board. 2. The semiconductor light emitting device according to claim 1, wherein a thermal conductivity of a support of the wiring board is 5 W / m · K or more. _3. The semiconductor light emitting device according to claim 1, wherein the support of the wiring board is made of one or more of AlN, Al ₂ O ₃ , Si ₃ N ₄ , Cu, and Al. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting element is installed so that a light-emitting surface thereof faces the wiring substrate. The semiconductor light emitting device according to claim 1, wherein the weir does not have a ridge line. A method for manufacturing a semiconductor light emitting device according to claim 1,
Providing the weir on the wiring board;
And a step of coating the sealing portion on the wiring substrate.   The means for providing a weir in the step of providing the weir is any one or more of a pre-molded mounting of the weir, a drawing method using a dispenser, a screen printing method, and a resist method. The manufacturing method of the semiconductor light-emitting device of description. A semiconductor light emitting device having a wiring board including a support and wiring, and a plurality of light emitting units,
The light emitting unit includes one or more semiconductor light emitting elements disposed on the wiring board, an insulating weir formed on the wiring board so as to surround the semiconductor light emitting elements, and the A sealing portion that is formed in a region surrounded by a weir and seals the semiconductor light emitting element;
A semiconductor light-emitting device, wherein the support of the wiring board has a thermal conductivity of 5 W / m · K or more. The wiring board support is formed of a base metal,
The semiconductor light-emitting device according to claim 1, further comprising an insulating layer between the base metal and the wiring. The wiring of the wiring board is covered with a white coating layer,
The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is a semiconductor light emitting device. The semiconductor light emitting device according to claim 9 or 10, wherein the insulating layer and / or the white coating layer contains a polyether ether ketone resin.

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