JP2009129970A - 研磨装置及び研磨方法 - Google Patents

研磨装置及び研磨方法 Download PDF

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Publication number
JP2009129970A
JP2009129970A JP2007300511A JP2007300511A JP2009129970A JP 2009129970 A JP2009129970 A JP 2009129970A JP 2007300511 A JP2007300511 A JP 2007300511A JP 2007300511 A JP2007300511 A JP 2007300511A JP 2009129970 A JP2009129970 A JP 2009129970A
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JP
Japan
Prior art keywords
polishing
conductive film
film
reflectance
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007300511A
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English (en)
Japanese (ja)
Other versions
JP2009129970A5 (https=
Inventor
Masaaki Ota
真朗 大田
Nobu Shimizu
展 清水
Yoichi Kobayashi
洋一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2007300511A priority Critical patent/JP2009129970A/ja
Priority to US12/292,453 priority patent/US7780503B2/en
Publication of JP2009129970A publication Critical patent/JP2009129970A/ja
Publication of JP2009129970A5 publication Critical patent/JP2009129970A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2007300511A 2007-11-20 2007-11-20 研磨装置及び研磨方法 Pending JP2009129970A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007300511A JP2009129970A (ja) 2007-11-20 2007-11-20 研磨装置及び研磨方法
US12/292,453 US7780503B2 (en) 2007-11-20 2008-11-19 Polishing apparatus and polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007300511A JP2009129970A (ja) 2007-11-20 2007-11-20 研磨装置及び研磨方法

Publications (2)

Publication Number Publication Date
JP2009129970A true JP2009129970A (ja) 2009-06-11
JP2009129970A5 JP2009129970A5 (https=) 2010-06-17

Family

ID=40642470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007300511A Pending JP2009129970A (ja) 2007-11-20 2007-11-20 研磨装置及び研磨方法

Country Status (2)

Country Link
US (1) US7780503B2 (https=)
JP (1) JP2009129970A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238851A (ja) * 2010-05-12 2011-11-24 Denso Corp 半導体装置の製造方法
JP2019024034A (ja) * 2017-07-24 2019-02-14 株式会社荏原製作所 基板研磨装置及び方法
JP2022501207A (ja) * 2018-09-24 2022-01-06 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated Ｃｍｐプロセス制御アルゴリズムへの入力としてのマシンビジョン

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5728239B2 (ja) 2010-03-02 2015-06-03 株式会社荏原製作所 研磨監視方法、研磨方法、研磨監視装置、および研磨装置
JP2013219248A (ja) * 2012-04-10 2013-10-24 Ebara Corp 研磨装置および研磨方法
JP2015126179A (ja) * 2013-12-27 2015-07-06 株式会社荏原製作所 研磨終点検出方法、及び研磨終点検出装置
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
KR20240015167A (ko) 2014-10-17 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
CN104503112B (zh) * 2014-12-16 2017-08-25 昆山国显光电有限公司 阵列基板的修补方法及其系统
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP6847811B2 (ja) 2017-10-24 2021-03-24 株式会社荏原製作所 研磨方法および研磨装置
CN111684571A (zh) * 2018-02-05 2020-09-18 应用材料公司 用于3d打印的cmp垫的压电终点指示
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
CN109968185B (zh) * 2019-04-17 2024-05-10 北京科技大学 一种金刚石膜研磨工装及其研磨方法
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN117066973B (zh) * 2023-05-11 2026-01-13 中国人民解放军国防科技大学 光学元件的时变去除函数控时磨削补偿加工方法及系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345292A (ja) * 2000-06-02 2001-12-14 Ebara Corp ポリッシング方法および装置
JP2002166360A (ja) * 2000-12-04 2002-06-11 Nikon Corp 研磨状況モニタ方法及びその装置、研磨装置、半導体デバイス製造方法、並びに半導体デバイス
JP2003282507A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 光学測定による残膜の判定方法
JP2005322939A (ja) * 2005-06-08 2005-11-17 Tokyo Seimitsu Co Ltd ウェーハ研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
EP0806266A3 (en) * 1996-05-09 1998-12-09 Canon Kabushiki Kaisha Polishing method and polishing apparatus using the same
US6108091A (en) * 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
KR100718737B1 (ko) * 2000-01-17 2007-05-15 가부시키가이샤 에바라 세이사꾸쇼 폴리싱 장치
JP4131632B2 (ja) * 2001-06-15 2008-08-13 株式会社荏原製作所 ポリッシング装置及び研磨パッド
JP4542324B2 (ja) 2002-10-17 2010-09-15 株式会社荏原製作所 研磨状態監視装置及びポリッシング装置
JP4714427B2 (ja) * 2004-05-14 2011-06-29 株式会社荏原製作所 基板上に形成された薄膜の研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345292A (ja) * 2000-06-02 2001-12-14 Ebara Corp ポリッシング方法および装置
JP2002166360A (ja) * 2000-12-04 2002-06-11 Nikon Corp 研磨状況モニタ方法及びその装置、研磨装置、半導体デバイス製造方法、並びに半導体デバイス
JP2003282507A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 光学測定による残膜の判定方法
JP2005322939A (ja) * 2005-06-08 2005-11-17 Tokyo Seimitsu Co Ltd ウェーハ研磨方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238851A (ja) * 2010-05-12 2011-11-24 Denso Corp 半導体装置の製造方法
JP2019024034A (ja) * 2017-07-24 2019-02-14 株式会社荏原製作所 基板研磨装置及び方法
US11195729B2 (en) 2017-07-24 2021-12-07 Ebara Corporation Substrate polishing apparatus and method
JP7023062B2 (ja) 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP2022501207A (ja) * 2018-09-24 2022-01-06 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated Ｃｍｐプロセス制御アルゴリズムへの入力としてのマシンビジョン
JP7472111B2 (ja) 2018-09-24 2024-04-22 アプライド マテリアルズ インコーポレイテッド Ｃｍｐプロセス制御アルゴリズムへの入力としてのマシンビジョン
US12257665B2 (en) 2018-09-24 2025-03-25 Applied Materials, Inc. Machine vision as input to a CMP process control algorithm

Also Published As

Publication number Publication date
US7780503B2 (en) 2010-08-24
US20090130956A1 (en) 2009-05-21

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