JP2009111228A - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP2009111228A
JP2009111228A JP2007283156A JP2007283156A JP2009111228A JP 2009111228 A JP2009111228 A JP 2009111228A JP 2007283156 A JP2007283156 A JP 2007283156A JP 2007283156 A JP2007283156 A JP 2007283156A JP 2009111228 A JP2009111228 A JP 2009111228A
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JP
Japan
Prior art keywords
light
layer
semiconductor laser
order mode
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007283156A
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English (en)
Japanese (ja)
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JP2009111228A5 (https=
Inventor
Hidekazu Kawanishi
秀和 川西
Yuichi Hamaguchi
雄一 浜口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007283156A priority Critical patent/JP2009111228A/ja
Priority to US12/261,499 priority patent/US20090122824A1/en
Publication of JP2009111228A publication Critical patent/JP2009111228A/ja
Publication of JP2009111228A5 publication Critical patent/JP2009111228A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2007283156A 2007-10-31 2007-10-31 半導体レーザ装置 Pending JP2009111228A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007283156A JP2009111228A (ja) 2007-10-31 2007-10-31 半導体レーザ装置
US12/261,499 US20090122824A1 (en) 2007-10-31 2008-10-30 Semiconductor laser apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007283156A JP2009111228A (ja) 2007-10-31 2007-10-31 半導体レーザ装置

Publications (2)

Publication Number Publication Date
JP2009111228A true JP2009111228A (ja) 2009-05-21
JP2009111228A5 JP2009111228A5 (https=) 2009-07-23

Family

ID=40623661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007283156A Pending JP2009111228A (ja) 2007-10-31 2007-10-31 半導体レーザ装置

Country Status (2)

Country Link
US (1) US20090122824A1 (https=)
JP (1) JP2009111228A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010278278A (ja) * 2009-05-29 2010-12-09 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
JP2014022672A (ja) * 2012-07-23 2014-02-03 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
WO2026079614A1 (ko) * 2024-10-10 2026-04-16 엘지이노텍 주식회사 광 흡수 금속층을 포함하는 large optical cavity 구조를 갖는 레이저 다이오드 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104300367B (zh) * 2014-10-21 2017-09-26 中国科学院半导体研究所 抑制GaAs基激光器高阶模的方法
US11431149B1 (en) * 2019-03-22 2022-08-30 Freedom Photonics Llc Single mode laser with large optical mode size

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3754226B2 (ja) * 1999-03-25 2006-03-08 三洋電機株式会社 半導体発光素子
EP1143582B1 (en) * 1999-09-29 2003-03-19 The Furukawa Electric Co., Ltd. Gain-coupled distributed feedback semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010278278A (ja) * 2009-05-29 2010-12-09 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
JP2014022672A (ja) * 2012-07-23 2014-02-03 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
WO2026079614A1 (ko) * 2024-10-10 2026-04-16 엘지이노텍 주식회사 광 흡수 금속층을 포함하는 large optical cavity 구조를 갖는 레이저 다이오드 장치

Also Published As

Publication number Publication date
US20090122824A1 (en) 2009-05-14

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