JP2009111186A - 基板処理方法、基板搬送方法および基板搬送装置 - Google Patents

基板処理方法、基板搬送方法および基板搬送装置 Download PDF

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Publication number
JP2009111186A
JP2009111186A JP2007282374A JP2007282374A JP2009111186A JP 2009111186 A JP2009111186 A JP 2009111186A JP 2007282374 A JP2007282374 A JP 2007282374A JP 2007282374 A JP2007282374 A JP 2007282374A JP 2009111186 A JP2009111186 A JP 2009111186A
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JP
Japan
Prior art keywords
substrate
exposure apparatus
vacuum
exposure
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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JP2007282374A
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English (en)
Japanese (ja)
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JP2009111186A5 (enExample
Inventor
Kentaro Matsunaga
健太郎 松永
Daisuke Kawamura
大輔 河村
Yasuro Mitsuyoshi
靖郎 三吉
Hideshi Shiobara
英志 塩原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007282374A priority Critical patent/JP2009111186A/ja
Priority to US12/261,596 priority patent/US7973907B2/en
Publication of JP2009111186A publication Critical patent/JP2009111186A/ja
Publication of JP2009111186A5 publication Critical patent/JP2009111186A5/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007282374A 2007-10-30 2007-10-30 基板処理方法、基板搬送方法および基板搬送装置 Abandoned JP2009111186A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007282374A JP2009111186A (ja) 2007-10-30 2007-10-30 基板処理方法、基板搬送方法および基板搬送装置
US12/261,596 US7973907B2 (en) 2007-10-30 2008-10-30 Method for treating substrate, method for conveying substrate, and apparatus for conveying substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007282374A JP2009111186A (ja) 2007-10-30 2007-10-30 基板処理方法、基板搬送方法および基板搬送装置

Publications (2)

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JP2009111186A true JP2009111186A (ja) 2009-05-21
JP2009111186A5 JP2009111186A5 (enExample) 2010-04-22

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JP2007282374A Abandoned JP2009111186A (ja) 2007-10-30 2007-10-30 基板処理方法、基板搬送方法および基板搬送装置

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Country Link
US (1) US7973907B2 (enExample)
JP (1) JP2009111186A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010004827A1 (ja) * 2008-07-07 2010-01-14 東京エレクトロン株式会社 レジスト処理装置、レジスト塗布現像装置、およびレジスト処理方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010182732A (ja) * 2009-02-03 2010-08-19 Toshiba Corp 半導体装置の製造方法
JP2011100840A (ja) * 2009-11-05 2011-05-19 Toshiba Corp 半導体装置の製造方法および露光装置
US20240411225A1 (en) * 2023-06-09 2024-12-12 Canon Kabushiki Kaisha System including heating means and actinic radiation source and a method of using the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104167A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 露光装置及び半導体装置の製造方法
JPH09213621A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 塗布膜形成方法及びその装置
JPH09283401A (ja) * 1996-04-09 1997-10-31 Nikon Corp 露光装置
JP2000150395A (ja) * 1998-11-12 2000-05-30 Tokyo Electron Ltd 処理システム
JP2004179567A (ja) * 2002-11-29 2004-06-24 Nikon Corp 露光装置
JP2006278824A (ja) * 2005-03-30 2006-10-12 Dainippon Screen Mfg Co Ltd 基板処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262699A (ja) * 1995-03-28 1996-10-11 Canon Inc レジスト組成物、レジスト処理方法及び装置
JP3445937B2 (ja) * 1998-06-24 2003-09-16 東京エレクトロン株式会社 多段スピン型基板処理システム
US6254936B1 (en) * 1998-09-14 2001-07-03 Silicon Valley Group, Inc. Environment exchange control for material on a wafer surface
US6420098B1 (en) * 2000-07-12 2002-07-16 Motorola, Inc. Method and system for manufacturing semiconductor devices on a wafer
DE10061248B4 (de) * 2000-12-09 2004-02-26 Carl Zeiss Verfahren und Vorrichtung zur In-situ-Dekontamination eines EUV-Lithographiegerätes
US6558053B2 (en) * 2001-04-19 2003-05-06 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
SG115630A1 (en) * 2003-03-11 2005-10-28 Asml Netherlands Bv Temperature conditioned load lock, lithographic apparatus comprising such a load lock and method of manufacturing a substrate with such a load lock
SG115693A1 (en) 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
JP2005268358A (ja) 2004-03-17 2005-09-29 Nikon Corp ミラーの洗浄装置及び照明光学装置
JP2005268385A (ja) * 2004-03-17 2005-09-29 Mitsubishi Electric Corp 磁場成形装置、リング型磁石成形装置、磁場成形方法、リング型磁石の製造方法、及びリング型焼結磁石
US7248332B2 (en) 2004-07-13 2007-07-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007220956A (ja) * 2006-02-17 2007-08-30 Toshiba Corp 基板処理方法及び基板処理装置
US20080020324A1 (en) * 2006-07-19 2008-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction with top coater removal
JP4921913B2 (ja) * 2006-10-02 2012-04-25 株式会社東芝 基板洗浄方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104167A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 露光装置及び半導体装置の製造方法
JPH09213621A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 塗布膜形成方法及びその装置
JPH09283401A (ja) * 1996-04-09 1997-10-31 Nikon Corp 露光装置
JP2000150395A (ja) * 1998-11-12 2000-05-30 Tokyo Electron Ltd 処理システム
JP2004179567A (ja) * 2002-11-29 2004-06-24 Nikon Corp 露光装置
JP2006278824A (ja) * 2005-03-30 2006-10-12 Dainippon Screen Mfg Co Ltd 基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010004827A1 (ja) * 2008-07-07 2010-01-14 東京エレクトロン株式会社 レジスト処理装置、レジスト塗布現像装置、およびレジスト処理方法
JP2010016314A (ja) * 2008-07-07 2010-01-21 Tokyo Electron Ltd レジスト処理装置、レジスト塗布現像装置、およびレジスト処理方法

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Publication number Publication date
US20090115978A1 (en) 2009-05-07
US7973907B2 (en) 2011-07-05

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