JP2009105453A5 - - Google Patents

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Publication number
JP2009105453A5
JP2009105453A5 JP2009028120A JP2009028120A JP2009105453A5 JP 2009105453 A5 JP2009105453 A5 JP 2009105453A5 JP 2009028120 A JP2009028120 A JP 2009028120A JP 2009028120 A JP2009028120 A JP 2009028120A JP 2009105453 A5 JP2009105453 A5 JP 2009105453A5
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JP
Japan
Prior art keywords
pattern
exposure
reticle
exposed
determining
Prior art date
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Application number
JP2009028120A
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English (en)
Japanese (ja)
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JP4838866B2 (ja
JP2009105453A (ja
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Priority to JP2009028120A priority Critical patent/JP4838866B2/ja
Priority claimed from JP2009028120A external-priority patent/JP4838866B2/ja
Publication of JP2009105453A publication Critical patent/JP2009105453A/ja
Publication of JP2009105453A5 publication Critical patent/JP2009105453A5/ja
Application granted granted Critical
Publication of JP4838866B2 publication Critical patent/JP4838866B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2009028120A 2009-02-10 2009-02-10 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。 Expired - Fee Related JP4838866B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009028120A JP4838866B2 (ja) 2009-02-10 2009-02-10 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009028120A JP4838866B2 (ja) 2009-02-10 2009-02-10 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005207527A Division JP4336671B2 (ja) 2005-07-15 2005-07-15 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。

Publications (3)

Publication Number Publication Date
JP2009105453A JP2009105453A (ja) 2009-05-14
JP2009105453A5 true JP2009105453A5 (enExample) 2009-10-08
JP4838866B2 JP4838866B2 (ja) 2011-12-14

Family

ID=40706773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009028120A Expired - Fee Related JP4838866B2 (ja) 2009-02-10 2009-02-10 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。

Country Status (1)

Country Link
JP (1) JP4838866B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5607327B2 (ja) * 2009-08-27 2014-10-15 キヤノン株式会社 決定方法、露光方法、デバイスの製造方法及びプログラム
NL2005523A (en) 2009-10-28 2011-05-02 Asml Netherlands Bv Selection of optimum patterns in a design layout based on diffraction signature analysis.
US8739079B2 (en) * 2009-10-30 2014-05-27 Canon Kabushiki Kaisha Recording medium and determination method
WO2023135773A1 (ja) * 2022-01-14 2023-07-20 ギガフォトン株式会社 フォトマスクの作成方法、データ作成方法、及び電子デバイスの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3339174B2 (ja) * 1993-11-08 2002-10-28 ソニー株式会社 フォトマスクの製造方法、露光方法及び半導体装置の製造方法
JPH08202020A (ja) * 1995-01-31 1996-08-09 Sony Corp フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法
JP3776008B2 (ja) * 2000-07-11 2006-05-17 東京エレクトロン株式会社 露光条件出し方法
JP3708058B2 (ja) * 2002-02-28 2005-10-19 株式会社東芝 フォトマスクの製造方法およびそのフォトマスクを用いた半導体装置の製造方法
JP2004079911A (ja) * 2002-08-21 2004-03-11 Fujitsu Ltd 線幅管理方法
JP2004319687A (ja) * 2003-04-15 2004-11-11 Toshiba Corp パターン計測システム、パターン計測方法、プロセス管理方法及び露光条件決定方法
US7355673B2 (en) * 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout

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