JP2009086646A5 - - Google Patents
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- JP2009086646A5 JP2009086646A5 JP2008201279A JP2008201279A JP2009086646A5 JP 2009086646 A5 JP2009086646 A5 JP 2009086646A5 JP 2008201279 A JP2008201279 A JP 2008201279A JP 2008201279 A JP2008201279 A JP 2008201279A JP 2009086646 A5 JP2009086646 A5 JP 2009086646A5
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- Japan
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- 125000000753 cycloalkyl group Chemical group 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 6
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 4
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- BNRNAKTVFSZAFA-UHFFFAOYSA-N hydrindane Chemical compound C1CCCC2CCCC21 BNRNAKTVFSZAFA-UHFFFAOYSA-N 0.000 description 2
- XOKSLPVRUOBDEW-UHFFFAOYSA-N pinane Chemical compound CC1CCC2C(C)(C)C1C2 XOKSLPVRUOBDEW-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- FZDZWLDRELLWNN-UHFFFAOYSA-N 1,2,3,3a,4,5,5a,6,7,8,8a,8b-dodecahydroacenaphthylene Chemical compound C1CCC2CCC3C2C1CCC3 FZDZWLDRELLWNN-UHFFFAOYSA-N 0.000 description 1
- GNMCGMFNBARSIY-UHFFFAOYSA-N 1,2,3,4,4a,4b,5,6,7,8,8a,9,10,10a-tetradecahydrophenanthrene Chemical compound C1CCCC2C3CCCCC3CCC21 GNMCGMFNBARSIY-UHFFFAOYSA-N 0.000 description 1
- GVJFFQYXVOJXFI-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a,9,9a,10,10a-tetradecahydroanthracene Chemical compound C1C2CCCCC2CC2C1CCCC2 GVJFFQYXVOJXFI-UHFFFAOYSA-N 0.000 description 1
- OLWAZOBRCQWWDB-UHFFFAOYSA-N 2,3,4,4a,4b,5,6,7,8,8a,9,9a-dodecahydro-1h-fluorene Chemical compound C12CCCCC2CC2C1CCCC2 OLWAZOBRCQWWDB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- VSHDEZHNJCSDFY-UHFFFAOYSA-N ac1l3g17 Chemical group C12C(C3)CCC3C2C2CCC1C2 VSHDEZHNJCSDFY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- GPRLTFBKWDERLU-UHFFFAOYSA-N bicyclo[2.2.2]octane Chemical group C1CC2CCC1CC2 GPRLTFBKWDERLU-UHFFFAOYSA-N 0.000 description 1
- SHOMMGQAMRXRRK-UHFFFAOYSA-N bicyclo[3.1.1]heptane Chemical compound C1C2CC1CCC2 SHOMMGQAMRXRRK-UHFFFAOYSA-N 0.000 description 1
- LPCWKMYWISGVSK-UHFFFAOYSA-N bicyclo[3.2.1]octane Chemical group C1C2CCC1CCC2 LPCWKMYWISGVSK-UHFFFAOYSA-N 0.000 description 1
- BEWYHVAWEKZDPP-UHFFFAOYSA-N bornane Chemical compound C1CC2(C)CCC1C2(C)C BEWYHVAWEKZDPP-UHFFFAOYSA-N 0.000 description 1
- 229930006742 bornane Natural products 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- NLUNLVTVUDIHFE-UHFFFAOYSA-N cyclooctylcyclooctane Chemical group C1CCCCCCC1C1CCCCCCC1 NLUNLVTVUDIHFE-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000000686 lactone group Chemical group 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- -1 perhydronaphthalenyl group Chemical group 0.000 description 1
- 125000001828 phenalenyl group Chemical group C1(C=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 1
- 229930006728 pinane Natural products 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- RSJKGSCJYJTIGS-BJUDXGSMSA-N undecane Chemical group CCCCCCCCCC[11CH3] RSJKGSCJYJTIGS-BJUDXGSMSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008201279A JP5459998B2 (ja) | 2007-09-14 | 2008-08-04 | ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂 |
| US12/678,023 US8043791B2 (en) | 2007-09-14 | 2008-09-11 | Positive photosensitive composition, pattern forming method using the composition and resin for use in the composition |
| PCT/JP2008/066444 WO2009035045A1 (ja) | 2007-09-14 | 2008-09-11 | ポジ型感光性組成物、該組成物を用いたパターン形成方法、及び、該組成物に用いられる樹脂 |
| KR1020107005496A KR101400823B1 (ko) | 2007-09-14 | 2008-09-11 | 포지티브형 감광성 조성물, 상기 조성물을 사용한 패턴형성방법, 및 상기 조성물에 사용되는 수지 |
| EP08830724.4A EP2194073B1 (en) | 2007-09-14 | 2008-09-11 | Positive-working photosensitive composition, method for pattern formation using the composition, resin for use in the composition, and monomer. |
| TW097134955A TWI427417B (zh) | 2007-09-14 | 2008-09-12 | 正型感光性組成物、使用該組成物之圖案形成方法及用於該組成物之樹脂 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007239572 | 2007-09-14 | ||
| JP2007239572 | 2007-09-14 | ||
| JP2008201279A JP5459998B2 (ja) | 2007-09-14 | 2008-08-04 | ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009086646A JP2009086646A (ja) | 2009-04-23 |
| JP2009086646A5 true JP2009086646A5 (enExample) | 2011-06-02 |
| JP5459998B2 JP5459998B2 (ja) | 2014-04-02 |
Family
ID=40452052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008201279A Expired - Fee Related JP5459998B2 (ja) | 2007-09-14 | 2008-08-04 | ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8043791B2 (enExample) |
| EP (1) | EP2194073B1 (enExample) |
| JP (1) | JP5459998B2 (enExample) |
| KR (1) | KR101400823B1 (enExample) |
| TW (1) | TWI427417B (enExample) |
| WO (1) | WO2009035045A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4945470B2 (ja) * | 2008-02-01 | 2012-06-06 | 富士フイルム株式会社 | ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法及び該ポジ型感光性組成物に用いられる化合物 |
| US9046773B2 (en) * | 2008-03-26 | 2015-06-02 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound |
| JP5314990B2 (ja) * | 2008-10-07 | 2013-10-16 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびレジストパターン形成方法 |
| JP5608492B2 (ja) * | 2009-09-18 | 2014-10-15 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法 |
| JP6261949B2 (ja) * | 2012-11-15 | 2018-01-17 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6261947B2 (ja) * | 2012-11-15 | 2018-01-17 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6261948B2 (ja) * | 2012-11-15 | 2018-01-17 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| KR102612639B1 (ko) * | 2016-01-27 | 2023-12-11 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물 및 레지스트 패턴 형성 방법 |
| JP6454760B2 (ja) * | 2017-07-28 | 2019-01-16 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0516015A1 (de) * | 1991-05-31 | 1992-12-02 | Hoechst Aktiengesellschaft | Substituierte Decarestrictine, Verfahren zu ihrer Herstellung und Verwendung derselben |
| JP3504156B2 (ja) * | 1998-09-24 | 2004-03-08 | 株式会社東芝 | 半導体装置の製造方法、感光性組成物及びパターン形成方法 |
| US6303266B1 (en) | 1998-09-24 | 2001-10-16 | Kabushiki Kaisha Toshiba | Resin useful for resist, resist composition and pattern forming process using the same |
| JP2000119588A (ja) * | 1998-10-15 | 2000-04-25 | Daicel Chem Ind Ltd | （メタ）アクリル酸エステル誘導体、酸感応性重合体及びフォトレジスト用樹脂組成物 |
| JP2001033971A (ja) | 1999-07-22 | 2001-02-09 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| JP3444844B2 (ja) * | 2000-07-17 | 2003-09-08 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
| US6808860B2 (en) * | 2000-04-17 | 2004-10-26 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
| JP2002091002A (ja) * | 2000-09-18 | 2002-03-27 | Jsr Corp | 感放射線性樹脂組成物 |
| JP3841399B2 (ja) * | 2002-02-21 | 2006-11-01 | 富士写真フイルム株式会社 | ポジ型レジスト組成物 |
| US7279265B2 (en) * | 2003-03-27 | 2007-10-09 | Fujifilm Corporation | Positive resist composition and pattern formation method using the same |
| US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
| JP4505357B2 (ja) * | 2005-03-16 | 2010-07-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| JP4881686B2 (ja) * | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4857138B2 (ja) * | 2006-03-23 | 2012-01-18 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
-
2008
- 2008-08-04 JP JP2008201279A patent/JP5459998B2/ja not_active Expired - Fee Related
- 2008-09-11 US US12/678,023 patent/US8043791B2/en not_active Expired - Fee Related
- 2008-09-11 WO PCT/JP2008/066444 patent/WO2009035045A1/ja not_active Ceased
- 2008-09-11 EP EP08830724.4A patent/EP2194073B1/en not_active Not-in-force
- 2008-09-11 KR KR1020107005496A patent/KR101400823B1/ko not_active Expired - Fee Related
- 2008-09-12 TW TW097134955A patent/TWI427417B/zh not_active IP Right Cessation
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