JP5459998B2 - ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂 - Google Patents

ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂 Download PDF

Info

Publication number
JP5459998B2
JP5459998B2 JP2008201279A JP2008201279A JP5459998B2 JP 5459998 B2 JP5459998 B2 JP 5459998B2 JP 2008201279 A JP2008201279 A JP 2008201279A JP 2008201279 A JP2008201279 A JP 2008201279A JP 5459998 B2 JP5459998 B2 JP 5459998B2
Authority
JP
Japan
Prior art keywords
group
acid
carbon atoms
examples
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008201279A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009086646A5 (enExample
JP2009086646A (ja
Inventor
優子 吉田
和人 嶋田
修史 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2008201279A priority Critical patent/JP5459998B2/ja
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to EP08830724.4A priority patent/EP2194073B1/en
Priority to US12/678,023 priority patent/US8043791B2/en
Priority to PCT/JP2008/066444 priority patent/WO2009035045A1/ja
Priority to KR1020107005496A priority patent/KR101400823B1/ko
Priority to TW097134955A priority patent/TWI427417B/zh
Publication of JP2009086646A publication Critical patent/JP2009086646A/ja
Publication of JP2009086646A5 publication Critical patent/JP2009086646A5/ja
Application granted granted Critical
Publication of JP5459998B2 publication Critical patent/JP5459998B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/42—Nitriles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Pyrane Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2008201279A 2007-09-14 2008-08-04 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂 Expired - Fee Related JP5459998B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008201279A JP5459998B2 (ja) 2007-09-14 2008-08-04 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂
US12/678,023 US8043791B2 (en) 2007-09-14 2008-09-11 Positive photosensitive composition, pattern forming method using the composition and resin for use in the composition
PCT/JP2008/066444 WO2009035045A1 (ja) 2007-09-14 2008-09-11 ポジ型感光性組成物、該組成物を用いたパターン形成方法、及び、該組成物に用いられる樹脂
KR1020107005496A KR101400823B1 (ko) 2007-09-14 2008-09-11 포지티브형 감광성 조성물, 상기 조성물을 사용한 패턴형성방법, 및 상기 조성물에 사용되는 수지
EP08830724.4A EP2194073B1 (en) 2007-09-14 2008-09-11 Positive-working photosensitive composition, method for pattern formation using the composition, resin for use in the composition, and monomer.
TW097134955A TWI427417B (zh) 2007-09-14 2008-09-12 正型感光性組成物、使用該組成物之圖案形成方法及用於該組成物之樹脂

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007239572 2007-09-14
JP2007239572 2007-09-14
JP2008201279A JP5459998B2 (ja) 2007-09-14 2008-08-04 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂

Publications (3)

Publication Number Publication Date
JP2009086646A JP2009086646A (ja) 2009-04-23
JP2009086646A5 JP2009086646A5 (enExample) 2011-06-02
JP5459998B2 true JP5459998B2 (ja) 2014-04-02

Family

ID=40452052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008201279A Expired - Fee Related JP5459998B2 (ja) 2007-09-14 2008-08-04 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂

Country Status (6)

Country Link
US (1) US8043791B2 (enExample)
EP (1) EP2194073B1 (enExample)
JP (1) JP5459998B2 (enExample)
KR (1) KR101400823B1 (enExample)
TW (1) TWI427417B (enExample)
WO (1) WO2009035045A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4945470B2 (ja) * 2008-02-01 2012-06-06 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法及び該ポジ型感光性組成物に用いられる化合物
US9046773B2 (en) * 2008-03-26 2015-06-02 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound
JP5314990B2 (ja) * 2008-10-07 2013-10-16 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
JP5608492B2 (ja) * 2009-09-18 2014-10-15 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP6261949B2 (ja) * 2012-11-15 2018-01-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6261947B2 (ja) * 2012-11-15 2018-01-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6261948B2 (ja) * 2012-11-15 2018-01-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
KR102612639B1 (ko) * 2016-01-27 2023-12-11 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법
JP6454760B2 (ja) * 2017-07-28 2019-01-16 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516015A1 (de) * 1991-05-31 1992-12-02 Hoechst Aktiengesellschaft Substituierte Decarestrictine, Verfahren zu ihrer Herstellung und Verwendung derselben
JP3504156B2 (ja) * 1998-09-24 2004-03-08 株式会社東芝 半導体装置の製造方法、感光性組成物及びパターン形成方法
US6303266B1 (en) 1998-09-24 2001-10-16 Kabushiki Kaisha Toshiba Resin useful for resist, resist composition and pattern forming process using the same
JP2000119588A (ja) * 1998-10-15 2000-04-25 Daicel Chem Ind Ltd （メタ）アクリル酸エステル誘導体、酸感応性重合体及びフォトレジスト用樹脂組成物
JP2001033971A (ja) 1999-07-22 2001-02-09 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP3444844B2 (ja) * 2000-07-17 2003-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US6808860B2 (en) * 2000-04-17 2004-10-26 Fuji Photo Film Co., Ltd. Positive photoresist composition
JP2002091002A (ja) * 2000-09-18 2002-03-27 Jsr Corp 感放射線性樹脂組成物
JP3841399B2 (ja) * 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
US7279265B2 (en) * 2003-03-27 2007-10-09 Fujifilm Corporation Positive resist composition and pattern formation method using the same
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4881686B2 (ja) * 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4857138B2 (ja) * 2006-03-23 2012-01-18 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
US8043791B2 (en) 2011-10-25
KR101400823B1 (ko) 2014-05-29
KR20100055465A (ko) 2010-05-26
JP2009086646A (ja) 2009-04-23
TWI427417B (zh) 2014-02-21
TW200915003A (en) 2009-04-01
EP2194073B1 (en) 2013-06-05
US20100216072A1 (en) 2010-08-26
EP2194073A1 (en) 2010-06-09
EP2194073A4 (en) 2011-10-05
WO2009035045A1 (ja) 2009-03-19

Similar Documents

Publication Publication Date Title
JP5297714B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5530651B2 (ja) 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP5799143B2 (ja) 液浸露光用ポジ型レジスト組成物及びパターン形成方法
JP2009053688A (ja) ポジ型レジスト組成物及びパターン形成方法
JP5210755B2 (ja) ポジ型レジスト組成物、及び該レジスト組成物を用いたパターン形成方法
JP5459998B2 (ja) ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂
JP5537998B2 (ja) パターン形成方法
JP2010102336A (ja) パターン形成方法
JP5331358B2 (ja) ポジ型レジスト組成物の製造方法、ポジ型レジスト組成物、およびパターン形成方法
JP5806800B2 (ja) ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5314944B2 (ja) 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
JP2010039147A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5548416B2 (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5371836B2 (ja) パターン形成方法
JP2010079270A (ja) パターン形成方法及びそれに用いる感光性組成物
JP5469820B2 (ja) ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5530645B2 (ja) 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP4966796B2 (ja) ポジ型レジスト組成物、該ポジ型レジスト組成物を用いたパターン形成方法及び該ポジ型レジスト組成物に用いられる化合物
JP4945470B2 (ja) ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法及び該ポジ型感光性組成物に用いられる化合物
JP5037403B2 (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5427447B2 (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法
JP2010134106A (ja) 感活性光線または感放射線性樹脂組成物、及び該感活性光線または感放射線性樹脂組成物を用いたパターン形成方法
JP5557938B2 (ja) ポジ型レジスト組成物、及び該レジスト組成物を用いたパターン形成方法
JP5358113B2 (ja) ポジ型レジスト組成物およびパターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110415

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110415

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20111216

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20120914

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20121004

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130924

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131120

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131217

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140114

R150 Certificate of patent or registration of utility model

Ref document number: 5459998

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees