JP2009084693A5 - - Google Patents

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Publication number
JP2009084693A5
JP2009084693A5 JP2008250749A JP2008250749A JP2009084693A5 JP 2009084693 A5 JP2009084693 A5 JP 2009084693A5 JP 2008250749 A JP2008250749 A JP 2008250749A JP 2008250749 A JP2008250749 A JP 2008250749A JP 2009084693 A5 JP2009084693 A5 JP 2009084693A5
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JP
Japan
Prior art keywords
layer deposition
deposition apparatus
segment
substrate
chamber
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JP2008250749A
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English (en)
Japanese (ja)
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JP2009084693A (ja
JP5599142B2 (ja
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Priority claimed from DE102008010041A external-priority patent/DE102008010041A1/de
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Publication of JP2009084693A5 publication Critical patent/JP2009084693A5/ja
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Publication of JP5599142B2 publication Critical patent/JP5599142B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008250749A 2007-09-28 2008-09-29 層析出装置および層析出装置を運転する方法 Expired - Fee Related JP5599142B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046606.6 2007-09-28
DE102007046606 2007-09-28
DE102008010041.2 2008-02-20
DE102008010041A DE102008010041A1 (de) 2007-09-28 2008-02-20 Schichtabscheidevorrichtung und Verfahren zu deren Betrieb

Publications (3)

Publication Number Publication Date
JP2009084693A JP2009084693A (ja) 2009-04-23
JP2009084693A5 true JP2009084693A5 (enExample) 2011-10-20
JP5599142B2 JP5599142B2 (ja) 2014-10-01

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JP2008250749A Expired - Fee Related JP5599142B2 (ja) 2007-09-28 2008-09-29 層析出装置および層析出装置を運転する方法

Country Status (3)

Country Link
US (1) US9080237B2 (enExample)
JP (1) JP5599142B2 (enExample)
DE (1) DE102008010041A1 (enExample)

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JP5392069B2 (ja) * 2009-12-25 2014-01-22 東京エレクトロン株式会社 成膜装置
JP5327147B2 (ja) * 2009-12-25 2013-10-30 東京エレクトロン株式会社 プラズマ処理装置
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
JP5423529B2 (ja) * 2010-03-29 2014-02-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
KR101246170B1 (ko) * 2011-01-13 2013-03-25 국제엘렉트릭코리아 주식회사 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
US8986785B2 (en) 2011-06-23 2015-03-24 Surface Activation Technologies Method and apparatus for continuous sulfonization of discrete article
DE102011113292A1 (de) * 2011-09-05 2013-03-07 Schmid Vacuum Technology Gmbh Vakuumdurchführung und Vakuumbeschichtungsvorrichtung mit Vakuumdurchführungen
JP5875809B2 (ja) * 2011-09-20 2016-03-02 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
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JP2014082463A (ja) * 2012-09-27 2014-05-08 Hitachi Kokusai Electric Inc 基板処理装置、蓋体及び半導体装置の製造方法
KR101614276B1 (ko) * 2012-09-27 2016-04-21 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 개체 및 반도체 장치의 제조 방법
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JP6404111B2 (ja) * 2014-12-18 2018-10-10 東京エレクトロン株式会社 プラズマ処理装置
CN105063550B (zh) * 2015-08-20 2017-11-28 包头天和磁材技术有限责任公司 渗透装置及方法
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US10522387B2 (en) * 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and multi-wafer deposition apparatus
US11581186B2 (en) * 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
TWI619840B (zh) * 2017-06-30 2018-04-01 國立交通大學 化學氣相沈積裝置
CN108315720A (zh) * 2018-01-31 2018-07-24 上海集成电路研发中心有限公司 一种提高膜厚均匀性的装置及方法
US20190382882A1 (en) * 2018-06-13 2019-12-19 X Development Llc Vacuum deposition processing of multiple substrates
CN113265626B (zh) * 2020-02-14 2023-06-16 芝浦机械电子装置株式会社 成膜装置及成膜装置的水分去除方法
FI130143B (en) * 2020-10-12 2023-03-10 Beneq Oy Atomic layer growth apparatus and method
CN115161622B (zh) * 2022-07-05 2023-09-05 徐州景澜新材料科技有限公司 一种用于金刚石生产的环保等离子体化学气相沉积设备

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