DE102008010041A1 - Schichtabscheidevorrichtung und Verfahren zu deren Betrieb - Google Patents

Schichtabscheidevorrichtung und Verfahren zu deren Betrieb Download PDF

Info

Publication number
DE102008010041A1
DE102008010041A1 DE102008010041A DE102008010041A DE102008010041A1 DE 102008010041 A1 DE102008010041 A1 DE 102008010041A1 DE 102008010041 A DE102008010041 A DE 102008010041A DE 102008010041 A DE102008010041 A DE 102008010041A DE 102008010041 A1 DE102008010041 A1 DE 102008010041A1
Authority
DE
Germany
Prior art keywords
segment
substrate
process gas
partition
schichtabscheidevorrichtung
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008010041A
Other languages
German (de)
English (en)
Inventor
Alexander Dr. Behres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008010041A priority Critical patent/DE102008010041A1/de
Priority to EP08163335A priority patent/EP2042619A3/de
Priority to JP2008250749A priority patent/JP5599142B2/ja
Priority to US12/240,270 priority patent/US9080237B2/en
Publication of DE102008010041A1 publication Critical patent/DE102008010041A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE102008010041A 2007-09-28 2008-02-20 Schichtabscheidevorrichtung und Verfahren zu deren Betrieb Withdrawn DE102008010041A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102008010041A DE102008010041A1 (de) 2007-09-28 2008-02-20 Schichtabscheidevorrichtung und Verfahren zu deren Betrieb
EP08163335A EP2042619A3 (de) 2007-09-28 2008-08-29 Beschichtungsvorrichtung und Verfahren zu deren Betrieb
JP2008250749A JP5599142B2 (ja) 2007-09-28 2008-09-29 層析出装置および層析出装置を運転する方法
US12/240,270 US9080237B2 (en) 2007-09-28 2008-09-29 Layer depositing device and method for operating it

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007046606.6 2007-09-28
DE102007046606 2007-09-28
DE102008010041A DE102008010041A1 (de) 2007-09-28 2008-02-20 Schichtabscheidevorrichtung und Verfahren zu deren Betrieb

Publications (1)

Publication Number Publication Date
DE102008010041A1 true DE102008010041A1 (de) 2009-04-02

Family

ID=40384500

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008010041A Withdrawn DE102008010041A1 (de) 2007-09-28 2008-02-20 Schichtabscheidevorrichtung und Verfahren zu deren Betrieb

Country Status (3)

Country Link
US (1) US9080237B2 (enExample)
JP (1) JP5599142B2 (enExample)
DE (1) DE102008010041A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011113292A1 (de) * 2011-09-05 2013-03-07 Schmid Vacuum Technology Gmbh Vakuumdurchführung und Vakuumbeschichtungsvorrichtung mit Vakuumdurchführungen
CN115161622A (zh) * 2022-07-05 2022-10-11 徐州景澜新材料科技有限公司 一种用于金刚石生产的环保等离子体化学气相沉积设备

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5392069B2 (ja) * 2009-12-25 2014-01-22 東京エレクトロン株式会社 成膜装置
JP5327147B2 (ja) * 2009-12-25 2013-10-30 東京エレクトロン株式会社 プラズマ処理装置
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
JP5423529B2 (ja) * 2010-03-29 2014-02-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
KR101246170B1 (ko) * 2011-01-13 2013-03-25 국제엘렉트릭코리아 주식회사 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
US8986785B2 (en) 2011-06-23 2015-03-24 Surface Activation Technologies Method and apparatus for continuous sulfonization of discrete article
JP5875809B2 (ja) * 2011-09-20 2016-03-02 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2013222884A (ja) 2012-04-18 2013-10-28 Furukawa Co Ltd 気相成長装置および成膜方法
JP2014017296A (ja) * 2012-07-06 2014-01-30 Tokyo Electron Ltd 成膜方法
JP2014082463A (ja) * 2012-09-27 2014-05-08 Hitachi Kokusai Electric Inc 基板処理装置、蓋体及び半導体装置の製造方法
KR101614276B1 (ko) * 2012-09-27 2016-04-21 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 개체 및 반도체 장치의 제조 방법
SG11201610307PA (en) 2014-07-03 2017-01-27 Applied Materials Inc Carousel batch epitaxy system
JP6404111B2 (ja) * 2014-12-18 2018-10-10 東京エレクトロン株式会社 プラズマ処理装置
CN105063550B (zh) * 2015-08-20 2017-11-28 包头天和磁材技术有限责任公司 渗透装置及方法
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US10522387B2 (en) * 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and multi-wafer deposition apparatus
US11581186B2 (en) * 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
TWI619840B (zh) * 2017-06-30 2018-04-01 國立交通大學 化學氣相沈積裝置
CN108315720A (zh) * 2018-01-31 2018-07-24 上海集成电路研发中心有限公司 一种提高膜厚均匀性的装置及方法
US20190382882A1 (en) * 2018-06-13 2019-12-19 X Development Llc Vacuum deposition processing of multiple substrates
CN113265626B (zh) * 2020-02-14 2023-06-16 芝浦机械电子装置株式会社 成膜装置及成膜装置的水分去除方法
FI130143B (en) * 2020-10-12 2023-03-10 Beneq Oy Atomic layer growth apparatus and method

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343327A (ja) * 1992-06-12 1993-12-24 Fujitsu Ltd 成膜方法
US5338362A (en) * 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
EP0387892B1 (en) * 1989-03-17 1995-06-14 Fujitsu Limited Forming an insulation layer, for example in an active matrix device
EP0683249A1 (en) * 1994-05-20 1995-11-22 Sharp Kabushiki Kaisha Method and apparatus for the growth of compound semiconductor layer
US20010002279A1 (en) * 1997-11-17 2001-05-31 Forrest Stephen R. Low pressure vapor phase deposition of organic thin films
US20020100418A1 (en) * 2000-05-12 2002-08-01 Gurtej Sandhu Versatile atomic layer deposition apparatus
DE10141084A1 (de) * 2001-08-22 2002-11-28 Infineon Technologies Ag Vorrichtung zur Abscheidung von dünnen Schichten auf einem Stubstrat und entsprechendes Verfahren
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US20040052972A1 (en) * 2002-07-03 2004-03-18 Jacques Schmitt Method and apparatus for ALD on a rotary susceptor
US20040187784A1 (en) * 2003-03-28 2004-09-30 Fluens Corporation Continuous flow deposition system
US20060013954A1 (en) * 2004-07-16 2006-01-19 Wen-Pin Chiu Method for improving atomic layer deposition process and the device thereof
US20060040055A1 (en) * 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
JPH05254985A (ja) * 1992-03-10 1993-10-05 Sony Corp 半導体製造装置のウェハクランプ機構
JP3144664B2 (ja) 1992-08-29 2001-03-12 東京エレクトロン株式会社 処理装置及び処理方法
DE19622402C1 (de) * 1996-06-04 1997-10-16 Siemens Ag Vorrichtung zum Behandeln wenigstens eines Substrats sowie Verwendung der Vorrichtung
US6444027B1 (en) 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
JP4470680B2 (ja) 2004-10-12 2010-06-02 日立電線株式会社 気相成長装置
KR100558922B1 (ko) 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
US20070218702A1 (en) 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0387892B1 (en) * 1989-03-17 1995-06-14 Fujitsu Limited Forming an insulation layer, for example in an active matrix device
JPH05343327A (ja) * 1992-06-12 1993-12-24 Fujitsu Ltd 成膜方法
US5338362A (en) * 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
EP0683249A1 (en) * 1994-05-20 1995-11-22 Sharp Kabushiki Kaisha Method and apparatus for the growth of compound semiconductor layer
US20010002279A1 (en) * 1997-11-17 2001-05-31 Forrest Stephen R. Low pressure vapor phase deposition of organic thin films
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US20020100418A1 (en) * 2000-05-12 2002-08-01 Gurtej Sandhu Versatile atomic layer deposition apparatus
DE10141084A1 (de) * 2001-08-22 2002-11-28 Infineon Technologies Ag Vorrichtung zur Abscheidung von dünnen Schichten auf einem Stubstrat und entsprechendes Verfahren
US20040052972A1 (en) * 2002-07-03 2004-03-18 Jacques Schmitt Method and apparatus for ALD on a rotary susceptor
US20060040055A1 (en) * 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20040187784A1 (en) * 2003-03-28 2004-09-30 Fluens Corporation Continuous flow deposition system
US20060013954A1 (en) * 2004-07-16 2006-01-19 Wen-Pin Chiu Method for improving atomic layer deposition process and the device thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011113292A1 (de) * 2011-09-05 2013-03-07 Schmid Vacuum Technology Gmbh Vakuumdurchführung und Vakuumbeschichtungsvorrichtung mit Vakuumdurchführungen
CN115161622A (zh) * 2022-07-05 2022-10-11 徐州景澜新材料科技有限公司 一种用于金刚石生产的环保等离子体化学气相沉积设备
CN115161622B (zh) * 2022-07-05 2023-09-05 徐州景澜新材料科技有限公司 一种用于金刚石生产的环保等离子体化学气相沉积设备

Also Published As

Publication number Publication date
JP2009084693A (ja) 2009-04-23
US20090117272A1 (en) 2009-05-07
US9080237B2 (en) 2015-07-14
JP5599142B2 (ja) 2014-10-01

Similar Documents

Publication Publication Date Title
DE102008010041A1 (de) Schichtabscheidevorrichtung und Verfahren zu deren Betrieb
DE69515926T2 (de) Verfahren zur Züchtung einer Halbleiterverbindungsschicht
DE69012727T2 (de) Verfahren zur herstellung eines polykristallinen filmes mittels chemischen dampfniederschlags.
DE112006003315T5 (de) Gaskopf und Dünnfilm-Herstellungsvorrichtung
EP2470684A1 (de) Cvd-verfahren und cvd-reaktor
DE102009020436A1 (de) Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats
DE102011002145B4 (de) Vorrichtung und Verfahren zum großflächigen Abscheiden von Halbleiterschichten mit gasgetrennter HCI-Einspeisung
EP3786321A2 (de) Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat
DE102018124957A1 (de) CVD-Reaktor mit auf Gaspolstern aufliegenden Substrathaltern
DE102022114717A1 (de) Verfahren und Vorrichtung zum Abscheiden einer ein Element der V. Hauptgruppe enthaltenen Schicht in einer Prozesskammer und anschließenden Reinigen der Prozesskammer
EP3523466A1 (de) Vorrichtung und verfahren zum aufbringen einer kohlenstoffschicht
EP3475472A1 (de) Verfahren und vorrichtung zur herstellung von beschichteten halbleiterscheiben
EP1844180A1 (de) Gasverteiler mit in ebenen angeordneten vorkammern
WO2021089424A1 (de) Verwendung eines cvd-reaktors zum abscheiden zweidimensionaler schichten
DE69111540T2 (de) Vorrichtung zum Herstellen einer Schicht im Vacuum.
WO2005093125A1 (de) Verfahren und vorrichtung zur ausbildung dünner schichten aus siliziumnitrid auf substratoberflächen
DE3634130A1 (de) Vorrichtung und verfahren fuer die chemische dampfabscheidung
DE4222406A1 (de) Verfahren zur herstellung von diamantschichten durch dampfphasensynthese
DE102004013626A1 (de) Verfahren und Vorrichtung zur Abscheidung dünner Schichten
DE102023105081A1 (de) Verfahren und Vorrichtung zum Abscheiden einer ein Element der V. Hauptgruppe enthaltenen Schicht in einer Prozesskammer und anschließendem Reinigen der Prozesskammer
EP1366208A1 (de) Verfahren zur herstellung von teilen und vakuumbehandlungssystem
DE102019212821B4 (de) Verfahren und Vorrichtung zur Herstellung einer Schicht, damit versehenes Substrat und dessen Verwendung
WO2021144161A1 (de) Cvd-reaktor mit doppelter vorlaufzonenplatte
EP2042619A2 (de) Beschichtungsvorrichtung und Verfahren zu deren Betrieb
DE102017203255B4 (de) Reaktor zur Verwendung bei einem System einer chemischen Dampfabscheidung und Verfahren zum Betreiben eines Systems einer chemischen Dampfabscheidung

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
R012 Request for examination validly filed

Effective date: 20140107

R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee