JP2009076729A5 - - Google Patents
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- Publication number
- JP2009076729A5 JP2009076729A5 JP2007244969A JP2007244969A JP2009076729A5 JP 2009076729 A5 JP2009076729 A5 JP 2009076729A5 JP 2007244969 A JP2007244969 A JP 2007244969A JP 2007244969 A JP2007244969 A JP 2007244969A JP 2009076729 A5 JP2009076729 A5 JP 2009076729A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- substrate
- single crystal
- forming
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000013078 crystal Substances 0.000 claims 9
- 238000002513 implantation Methods 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007244969A JP2009076729A (ja) | 2007-09-21 | 2007-09-21 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007244969A JP2009076729A (ja) | 2007-09-21 | 2007-09-21 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009076729A JP2009076729A (ja) | 2009-04-09 |
| JP2009076729A5 true JP2009076729A5 (zh) | 2010-10-14 |
Family
ID=40611419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007244969A Withdrawn JP2009076729A (ja) | 2007-09-21 | 2007-09-21 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009076729A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013057771A1 (ja) * | 2011-10-21 | 2015-04-02 | 株式会社島津製作所 | 薄膜トランジスタの製造方法 |
| WO2013057771A1 (ja) * | 2011-10-21 | 2013-04-25 | 株式会社島津製作所 | 薄膜トランジスタの製造方法 |
| WO2015050350A1 (ko) * | 2013-10-01 | 2015-04-09 | 코닝정밀소재 주식회사 | 전이 기판 제조방법, 이에 의해 제조된 전이 기판, 및 이를 이용한 반도체 소자 제조방법 |
| CN107845606B (zh) * | 2017-10-17 | 2020-05-05 | 武汉华星光电半导体显示技术有限公司 | 一种tft基板的制备方法以及tft基板 |
| CN109950392A (zh) * | 2019-03-13 | 2019-06-28 | 电子科技大学 | 具有沟槽的单晶薄膜制备方法、单晶薄膜及谐振器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1145862A (ja) * | 1997-07-24 | 1999-02-16 | Denso Corp | 半導体基板の製造方法 |
| JPH11145481A (ja) * | 1997-11-06 | 1999-05-28 | Denso Corp | 半導体基板およびその製造方法 |
| JP4609867B2 (ja) * | 1998-07-29 | 2011-01-12 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| JP2001102555A (ja) * | 1999-09-30 | 2001-04-13 | Seiko Epson Corp | 半導体装置、薄膜トランジスタ及びそれらの製造方法 |
| JP2004259970A (ja) * | 2003-02-26 | 2004-09-16 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ |
| US7691730B2 (en) * | 2005-11-22 | 2010-04-06 | Corning Incorporated | Large area semiconductor on glass insulator |
-
2007
- 2007-09-21 JP JP2007244969A patent/JP2009076729A/ja not_active Withdrawn
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