JP2009069829A - 溶解促進剤及びこれを含むフォトレジスト組成物 - Google Patents

溶解促進剤及びこれを含むフォトレジスト組成物 Download PDF

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Publication number
JP2009069829A
JP2009069829A JP2008234609A JP2008234609A JP2009069829A JP 2009069829 A JP2009069829 A JP 2009069829A JP 2008234609 A JP2008234609 A JP 2008234609A JP 2008234609 A JP2008234609 A JP 2008234609A JP 2009069829 A JP2009069829 A JP 2009069829A
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Japan
Prior art keywords
weight
parts
photoresist
chemical formula
photoresist composition
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JP2008234609A
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Japanese (ja)
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JP2009069829A5 (https=
Inventor
Dong-Woo Han
ドンウ ハン
Jeong-Sik Kim
ジョンシク キム
Min-Ja Yoo
ミンヤ ユ
Jae-Woo Lee
チェウ イ
Jae-Hyun Kim
チェヒュン キム
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Dongjin Semichem Co Ltd
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Dongjin Semichem Co Ltd
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Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of JP2009069829A publication Critical patent/JP2009069829A/ja
Publication of JP2009069829A5 publication Critical patent/JP2009069829A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C69/75—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of acids with a six-membered ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/04—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members
    • C07D207/10—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D207/12—Oxygen or sulfur atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/02—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom condensed with one carbocyclic ring
    • C07D209/04—Indoles; Hydrogenated indoles
    • C07D209/30—Indoles; Hydrogenated indoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to carbon atoms of the hetero ring
    • C07D209/32—Oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D211/00—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings
    • C07D211/04—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D211/06—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members
    • C07D211/36—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D211/40—Oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/06—Systems containing only non-condensed rings with a five-membered ring
    • C07C2601/08—Systems containing only non-condensed rings with a five-membered ring the ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Steroid Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008234609A 2007-09-12 2008-09-12 溶解促進剤及びこれを含むフォトレジスト組成物 Pending JP2009069829A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20070092796A KR101492403B1 (ko) 2007-09-12 2007-09-12 용해촉진제 및 이를 포함하는 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
JP2009069829A true JP2009069829A (ja) 2009-04-02
JP2009069829A5 JP2009069829A5 (https=) 2011-10-06

Family

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JP2008234609A Pending JP2009069829A (ja) 2007-09-12 2008-09-12 溶解促進剤及びこれを含むフォトレジスト組成物

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Country Link
US (1) US20090068585A1 (https=)
JP (1) JP2009069829A (https=)
KR (1) KR101492403B1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120107653A (ko) 2011-03-22 2012-10-04 삼성디스플레이 주식회사 감광성 수지 조성물 및 이를 이용한 패턴의 형성 방법
US20140127625A1 (en) * 2011-04-25 2014-05-08 Orthogonal, Inc. Orthogonal solvents and compatible photoresists for the photolithographic patterning of organic electronic devices
CN111655913A (zh) * 2018-01-31 2020-09-11 丝芭博株式会社 蛋白质纤维的制造方法
CN113004291B (zh) * 2019-12-20 2022-03-01 中国科学院化学研究所 基于金属卟啉的分子玻璃化学放大光刻胶及其制备方法和应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09278699A (ja) * 1996-04-10 1997-10-28 Shin Etsu Chem Co Ltd ジ又はトリフェニルモノテルペン炭化水素誘導体、溶解制御剤及び化学増幅ポジ型レジスト材料
JP2004012511A (ja) * 2002-06-03 2004-01-15 Matsushita Electric Ind Co Ltd パターン形成方法
JP2004302430A (ja) * 2003-02-17 2004-10-28 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
JP2005017766A (ja) * 2003-06-26 2005-01-20 Tokyo Ohka Kogyo Co Ltd 化学増幅型ポジ型ホトレジスト組成物
JP2006290799A (ja) * 2005-04-11 2006-10-26 Idemitsu Kosan Co Ltd レジスト添加剤及びそれを含有するレジスト組成物
JP2007240555A (ja) * 2006-03-03 2007-09-20 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性ポリアミドイミド樹脂組成物、パターンの製造方法及び電子部品

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683856A (en) * 1994-10-18 1997-11-04 Fuji Photo Film Co., Ltd. Positive-working photosensitive composition
JP3340864B2 (ja) * 1994-10-26 2002-11-05 富士写真フイルム株式会社 ポジ型化学増幅レジスト組成物
JP3676918B2 (ja) * 1997-10-09 2005-07-27 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP4250937B2 (ja) * 2002-09-25 2009-04-08 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09278699A (ja) * 1996-04-10 1997-10-28 Shin Etsu Chem Co Ltd ジ又はトリフェニルモノテルペン炭化水素誘導体、溶解制御剤及び化学増幅ポジ型レジスト材料
JP2004012511A (ja) * 2002-06-03 2004-01-15 Matsushita Electric Ind Co Ltd パターン形成方法
JP2004302430A (ja) * 2003-02-17 2004-10-28 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
JP2005017766A (ja) * 2003-06-26 2005-01-20 Tokyo Ohka Kogyo Co Ltd 化学増幅型ポジ型ホトレジスト組成物
JP2006290799A (ja) * 2005-04-11 2006-10-26 Idemitsu Kosan Co Ltd レジスト添加剤及びそれを含有するレジスト組成物
JP2007240555A (ja) * 2006-03-03 2007-09-20 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性ポリアミドイミド樹脂組成物、パターンの製造方法及び電子部品

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Publication number Publication date
US20090068585A1 (en) 2009-03-12
KR101492403B1 (ko) 2015-02-13
KR20090027522A (ko) 2009-03-17

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