JP2009065148A5 - - Google Patents

Download PDF

Info

Publication number
JP2009065148A5
JP2009065148A5 JP2008212000A JP2008212000A JP2009065148A5 JP 2009065148 A5 JP2009065148 A5 JP 2009065148A5 JP 2008212000 A JP2008212000 A JP 2008212000A JP 2008212000 A JP2008212000 A JP 2008212000A JP 2009065148 A5 JP2009065148 A5 JP 2009065148A5
Authority
JP
Japan
Prior art keywords
chamber
oxygen
argon
transfer chamber
passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2008212000A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009065148A (ja
Filing date
Publication date
Priority claimed from US11/843,508 external-priority patent/US20090050468A1/en
Application filed filed Critical
Publication of JP2009065148A publication Critical patent/JP2009065148A/ja
Publication of JP2009065148A5 publication Critical patent/JP2009065148A5/ja
Abandoned legal-status Critical Current

Links

JP2008212000A 2007-08-22 2008-08-20 アルミニウム相互接続部の制御された表面酸化 Abandoned JP2009065148A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/843,508 US20090050468A1 (en) 2007-08-22 2007-08-22 Controlled surface oxidation of aluminum interconnect

Publications (2)

Publication Number Publication Date
JP2009065148A JP2009065148A (ja) 2009-03-26
JP2009065148A5 true JP2009065148A5 (enExample) 2011-09-29

Family

ID=40381134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008212000A Abandoned JP2009065148A (ja) 2007-08-22 2008-08-20 アルミニウム相互接続部の制御された表面酸化

Country Status (5)

Country Link
US (1) US20090050468A1 (enExample)
JP (1) JP2009065148A (enExample)
KR (1) KR20090020456A (enExample)
CN (1) CN101373735B (enExample)
TW (1) TW200909601A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102568991B (zh) * 2010-12-17 2014-09-24 中芯国际集成电路制造(上海)有限公司 反应腔的输气管道系统及其控制方法
CN102586737A (zh) * 2012-03-09 2012-07-18 上海先进半导体制造股份有限公司 铝铜膜的物理气相沉积方法
US20160013288A1 (en) * 2014-07-09 2016-01-14 United Microelectronics Corp. Method of forming a metal gate structure
US10559483B2 (en) * 2016-08-10 2020-02-11 Lam Research Corporation Platform architecture to improve system productivity
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
CN108624844B (zh) * 2017-03-17 2019-11-12 株洲中车时代电气股份有限公司 一种晶圆背面金属薄膜及其制备方法
CN108132496B (zh) * 2017-12-28 2020-09-18 深圳市华星光电技术有限公司 金属栅偏光片及其制作方法、液晶面板及液晶显示器
JP2019145654A (ja) * 2018-02-20 2019-08-29 エイブリック株式会社 半導体製造装置および半導体装置の製造方法
KR102821720B1 (ko) * 2019-09-16 2025-06-18 삼성전자주식회사 스퍼터링 장치 및 그를 이용한 자기 기억 소자의 제조 방법
US11674216B2 (en) * 2019-12-24 2023-06-13 Applied Materials, Inc. Methods and apparatus for depositing aluminum by physical vapor deposition (PVD) with controlled cooling
US20250171887A1 (en) * 2023-11-29 2025-05-29 Applied Materials, Inc. Stress control method for physical vapor deposition of aluminum

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5935395A (en) * 1995-11-08 1999-08-10 Mitel Corporation Substrate processing apparatus with non-evaporable getter pump
US6602348B1 (en) * 1996-09-17 2003-08-05 Applied Materials, Inc. Substrate cooldown chamber
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6177350B1 (en) * 1998-04-14 2001-01-23 Applied Materials, Inc. Method for forming a multilayered aluminum-comprising structure on a substrate
JP3125745B2 (ja) * 1998-04-30 2001-01-22 日本電気株式会社 半導体装置の製造方法
US6287958B1 (en) * 1999-06-03 2001-09-11 Micron Technology, Inc. Method of manufacturing a self-aligned etch stop for polycrystalline silicon plugs on a semiconductor device
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6747852B2 (en) * 2001-08-17 2004-06-08 International Business Machines Corporation Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer
US6649537B1 (en) * 2001-11-19 2003-11-18 Lsi Logic Corporation Intermittent pulsed oxidation process
WO2003092084A1 (en) * 2002-04-23 2003-11-06 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same

Similar Documents

Publication Publication Date Title
JP2009065148A5 (enExample)
TWI431693B (zh) A semiconductor manufacturing apparatus, a manufacturing method of a semiconductor device, and a memory medium
JP5938506B1 (ja) 基板処理システム、半導体装置の製造方法、プログラム及び記録媒体
US9842755B2 (en) Method and system for naturally oxidizing a substrate
JP6089082B1 (ja) 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
CN101506949B (zh) 基板处理方法、半导体装置的制造方法以及基板处理装置
KR101204640B1 (ko) 진공 처리 시스템
TWI678775B (zh) 基板處理裝置、半導體裝置之製造方法及記錄程式之記錄媒體
JP2017157705A (ja) 基板処理装置、半導体装置の製造方法及びプログラム
KR102331555B1 (ko) 그래핀의 하지막의 생성 방법, 그래핀의 생성 방법 및 그래핀의 하지막 생성 장치
JP2011014704A (ja) 半導体装置の製造方法及び基板処理システム
JP2010267925A (ja) 半導体装置の製造方法及び基板処理装置
JP2011023706A5 (enExample)
JP6559107B2 (ja) 成膜方法および成膜システム
CN102007588A (zh) 基板载置台的降温方法、计算机可读取的存储介质和基板处理系统
JP7642769B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
JP4634918B2 (ja) 真空処理装置
JP4515060B2 (ja) 製造装置および有機化合物を含む層の作製方法
TWI598982B (zh) 半導體製造裝置及製造方法
US20220005712A1 (en) Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Method of Processing Substrate Support
JP2012169438A (ja) 半導体装置の製造方法及び基板処理装置
JP2011222600A (ja) 半導体装置の製造方法及び半導体装置の製造装置
JP2016115793A (ja) 基板搬送方法、基板処理装置、及び記憶媒体
JP2009293069A (ja) 成膜方法及び処理システム
JP2015183260A (ja) クリーニング方法、基板処理装置およびプログラム