CN101373735B - 铝互连线的可控表面氧化 - Google Patents

铝互连线的可控表面氧化 Download PDF

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Publication number
CN101373735B
CN101373735B CN2007101987415A CN200710198741A CN101373735B CN 101373735 B CN101373735 B CN 101373735B CN 2007101987415 A CN2007101987415 A CN 2007101987415A CN 200710198741 A CN200710198741 A CN 200710198741A CN 101373735 B CN101373735 B CN 101373735B
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China
Prior art keywords
chamber
oxygen
cooling
argon
aluminum
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Expired - Fee Related
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CN2007101987415A
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English (en)
Chinese (zh)
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CN101373735A (zh
Inventor
米勒·A·艾伦
阿诗士·博德克
曹勇
安东尼·C-T·陈
建明·付
政·徐
康成横山
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H10P14/44—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2007101987415A 2007-08-22 2007-12-12 铝互连线的可控表面氧化 Expired - Fee Related CN101373735B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/843,508 2007-08-22
US11/843,508 US20090050468A1 (en) 2007-08-22 2007-08-22 Controlled surface oxidation of aluminum interconnect

Publications (2)

Publication Number Publication Date
CN101373735A CN101373735A (zh) 2009-02-25
CN101373735B true CN101373735B (zh) 2011-07-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101987415A Expired - Fee Related CN101373735B (zh) 2007-08-22 2007-12-12 铝互连线的可控表面氧化

Country Status (5)

Country Link
US (1) US20090050468A1 (enExample)
JP (1) JP2009065148A (enExample)
KR (1) KR20090020456A (enExample)
CN (1) CN101373735B (enExample)
TW (1) TW200909601A (enExample)

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CN102568991B (zh) * 2010-12-17 2014-09-24 中芯国际集成电路制造(上海)有限公司 反应腔的输气管道系统及其控制方法
CN102586737A (zh) * 2012-03-09 2012-07-18 上海先进半导体制造股份有限公司 铝铜膜的物理气相沉积方法
US20160013288A1 (en) * 2014-07-09 2016-01-14 United Microelectronics Corp. Method of forming a metal gate structure
US10559483B2 (en) * 2016-08-10 2020-02-11 Lam Research Corporation Platform architecture to improve system productivity
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
CN108624844B (zh) * 2017-03-17 2019-11-12 株洲中车时代电气股份有限公司 一种晶圆背面金属薄膜及其制备方法
CN108132496B (zh) * 2017-12-28 2020-09-18 深圳市华星光电技术有限公司 金属栅偏光片及其制作方法、液晶面板及液晶显示器
JP2019145654A (ja) * 2018-02-20 2019-08-29 エイブリック株式会社 半導体製造装置および半導体装置の製造方法
KR102821720B1 (ko) * 2019-09-16 2025-06-18 삼성전자주식회사 스퍼터링 장치 및 그를 이용한 자기 기억 소자의 제조 방법
US11674216B2 (en) * 2019-12-24 2023-06-13 Applied Materials, Inc. Methods and apparatus for depositing aluminum by physical vapor deposition (PVD) with controlled cooling
US20250171887A1 (en) * 2023-11-29 2025-05-29 Applied Materials, Inc. Stress control method for physical vapor deposition of aluminum

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US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5935395A (en) * 1995-11-08 1999-08-10 Mitel Corporation Substrate processing apparatus with non-evaporable getter pump
US6602348B1 (en) * 1996-09-17 2003-08-05 Applied Materials, Inc. Substrate cooldown chamber
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6177350B1 (en) * 1998-04-14 2001-01-23 Applied Materials, Inc. Method for forming a multilayered aluminum-comprising structure on a substrate
JP3125745B2 (ja) * 1998-04-30 2001-01-22 日本電気株式会社 半導体装置の製造方法
US6287958B1 (en) * 1999-06-03 2001-09-11 Micron Technology, Inc. Method of manufacturing a self-aligned etch stop for polycrystalline silicon plugs on a semiconductor device
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6747852B2 (en) * 2001-08-17 2004-06-08 International Business Machines Corporation Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer
US6649537B1 (en) * 2001-11-19 2003-11-18 Lsi Logic Corporation Intermittent pulsed oxidation process
WO2003092084A1 (en) * 2002-04-23 2003-11-06 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same

Non-Patent Citations (1)

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Title
JP特开2000-216158A 2000.08.04

Also Published As

Publication number Publication date
KR20090020456A (ko) 2009-02-26
TW200909601A (en) 2009-03-01
US20090050468A1 (en) 2009-02-26
JP2009065148A (ja) 2009-03-26
CN101373735A (zh) 2009-02-25

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Granted publication date: 20110706

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