TW200909601A - Controlled surface oxidation of aluminum interconnect - Google Patents

Controlled surface oxidation of aluminum interconnect Download PDF

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Publication number
TW200909601A
TW200909601A TW096147994A TW96147994A TW200909601A TW 200909601 A TW200909601 A TW 200909601A TW 096147994 A TW096147994 A TW 096147994A TW 96147994 A TW96147994 A TW 96147994A TW 200909601 A TW200909601 A TW 200909601A
Authority
TW
Taiwan
Prior art keywords
chamber
cooling
oxygen
argon
sputtering
Prior art date
Application number
TW096147994A
Other languages
English (en)
Chinese (zh)
Inventor
A Miller Allen
Ashish Bodke
Yong Gao
Anthony C-T Chan
Jianming Fu
Zheng Xu
Yasunori Yokoyama
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200909601A publication Critical patent/TW200909601A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H10P14/44—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW096147994A 2007-08-22 2007-12-14 Controlled surface oxidation of aluminum interconnect TW200909601A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/843,508 US20090050468A1 (en) 2007-08-22 2007-08-22 Controlled surface oxidation of aluminum interconnect

Publications (1)

Publication Number Publication Date
TW200909601A true TW200909601A (en) 2009-03-01

Family

ID=40381134

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096147994A TW200909601A (en) 2007-08-22 2007-12-14 Controlled surface oxidation of aluminum interconnect

Country Status (5)

Country Link
US (1) US20090050468A1 (enExample)
JP (1) JP2009065148A (enExample)
KR (1) KR20090020456A (enExample)
CN (1) CN101373735B (enExample)
TW (1) TW200909601A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI875902B (zh) * 2019-12-24 2025-03-11 美商應用材料股份有限公司 用於由具有控制冷卻的物理氣相沉積（ｐｖｄ）來沉積鋁的方法及用於記錄在其上相關指令的電腦可讀取媒體

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CN102568991B (zh) * 2010-12-17 2014-09-24 中芯国际集成电路制造(上海)有限公司 反应腔的输气管道系统及其控制方法
CN102586737A (zh) * 2012-03-09 2012-07-18 上海先进半导体制造股份有限公司 铝铜膜的物理气相沉积方法
US20160013288A1 (en) * 2014-07-09 2016-01-14 United Microelectronics Corp. Method of forming a metal gate structure
US10559483B2 (en) * 2016-08-10 2020-02-11 Lam Research Corporation Platform architecture to improve system productivity
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
CN108624844B (zh) * 2017-03-17 2019-11-12 株洲中车时代电气股份有限公司 一种晶圆背面金属薄膜及其制备方法
CN108132496B (zh) * 2017-12-28 2020-09-18 深圳市华星光电技术有限公司 金属栅偏光片及其制作方法、液晶面板及液晶显示器
JP2019145654A (ja) * 2018-02-20 2019-08-29 エイブリック株式会社 半導体製造装置および半導体装置の製造方法
KR102821720B1 (ko) * 2019-09-16 2025-06-18 삼성전자주식회사 스퍼터링 장치 및 그를 이용한 자기 기억 소자의 제조 방법
US20250171887A1 (en) * 2023-11-29 2025-05-29 Applied Materials, Inc. Stress control method for physical vapor deposition of aluminum

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US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5935395A (en) * 1995-11-08 1999-08-10 Mitel Corporation Substrate processing apparatus with non-evaporable getter pump
US6602348B1 (en) * 1996-09-17 2003-08-05 Applied Materials, Inc. Substrate cooldown chamber
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6177350B1 (en) * 1998-04-14 2001-01-23 Applied Materials, Inc. Method for forming a multilayered aluminum-comprising structure on a substrate
JP3125745B2 (ja) * 1998-04-30 2001-01-22 日本電気株式会社 半導体装置の製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI875902B (zh) * 2019-12-24 2025-03-11 美商應用材料股份有限公司 用於由具有控制冷卻的物理氣相沉積（ｐｖｄ）來沉積鋁的方法及用於記錄在其上相關指令的電腦可讀取媒體

Also Published As

Publication number Publication date
CN101373735B (zh) 2011-07-06
KR20090020456A (ko) 2009-02-26
US20090050468A1 (en) 2009-02-26
JP2009065148A (ja) 2009-03-26
CN101373735A (zh) 2009-02-25

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