JP2009063551A5 - - Google Patents

Claims (32)

A support frame, a structure disposed inside the support frame, and a support unit that swingably supports the structure on the support frame, and detects a physical quantity in accordance with a displacement amount of the structure. A sensor element;
A substrate on which the sensor element is fixed on the upper surface;
And at least a resin sealing layer for sealing the sensor element,
The semiconductor sensor device according to claim 1, wherein a concave portion having a predetermined depth in the thickness direction from the upper surface is formed in the substrate at least in a region corresponding to a region inside the support frame. A fixing member for fixing the sensor element on the substrate;
The semiconductor sensor device according to claim 1, wherein the fixing member is formed on an upper surface of the substrate so as to surround the concave portion when viewed in a plan view. The fixing member is formed on the outer periphery of the sensor element,
The semiconductor sensor device according to claim 2, wherein the sensor element is fixed on the substrate such that a bottom surface of the support frame and an upper surface of the substrate are in contact with each other. The fixing member is formed in a region between the support frame of the sensor element and the substrate,
The semiconductor sensor device according to claim 2, wherein the sensor element is fixed by the fixing member so as to be spaced apart from the upper surface of the substrate by a predetermined distance.   The semiconductor sensor device according to claim 2, wherein the fixing member is made of a silver paste. A semiconductor element that includes a protruding electrode and is electrically connected to the sensor element via the protruding electrode;
The said semiconductor element is arrange | positioned on the upper surface of the said sensor element so that the said structure and the said support part of the said sensor element may be covered at least. The semiconductor sensor device described in 1. The semiconductor sensor device according to claim 1, wherein the sensor element is sealed with the resin sealing layer, and is configured in a QFN type or BGA type package form. .   The semiconductor sensor device according to claim 6, wherein the semiconductor element is a control circuit element.   The semiconductor sensor device according to claim 1, wherein the substrate is a lead frame.   The semiconductor sensor device according to claim 9, wherein the lead frame is made of a metal plate containing a copper material.   The semiconductor sensor device according to claim 9, wherein the lead frame includes a die pad and a plurality of lead terminals separated from the die pad.   The semiconductor sensor device according to claim 11, wherein the lead terminal is electrically connected to the sensor element via a bonding wire.   The semiconductor sensor device according to claim 1, wherein the resin sealing layer is made of a thermosetting resin.   The semiconductor sensor device according to claim 1, wherein the sensor element is a piezoresistive acceleration sensor element capable of detecting acceleration in three axial directions.   The structure includes a rectangular parallelepiped core portion supported by the support frame via the four support portions, and a rectangular parallelepiped shape integrally connected to each of the four corners of the core portion in plan view. The semiconductor sensor device according to claim 1, further comprising four associated parts.   The semiconductor sensor device according to claim 15, wherein a gap portion is provided between the accompanying portion and the support frame and the support portion.   The semiconductor device according to claim 16, wherein the gap portion has a size such that the accompanying portion does not contact the support frame or the support portion when the structure is swung by receiving an acceleration. Sensor device.   18. The semiconductor sensor device according to claim 1, wherein a piezoresistive element is formed on a surface of each of the four support portions. 19.   The planar area of the concave portion is larger than a region inside the support frame of the sensor element when seen in a plan view. Semiconductor sensor device.   The semiconductor sensor device according to claim 9, wherein a thickness of the lead frame is 0.15 mm to 0.2 mm.   21. The semiconductor sensor device according to claim 1, wherein a depth of the recess is 40 [mu] m to 100 [mu] m.   The semiconductor sensor device according to claim 2, wherein the fixing member is an adhesive layer.   The semiconductor sensor device according to claim 22, wherein the adhesive layer includes any one of a resin adhesive, a conductive adhesive, and a silver paste.   The control circuit element has a function of amplifying and correcting an electric signal detected by the sensor element and outputting the electric signal as a voltage proportional to acceleration. 9. The semiconductor sensor device according to 8.   25. The semiconductor sensor device according to claim 8, wherein the control circuit element is flip-chip mounted on an upper surface of the sensor element.   26. The semiconductor sensor device according to claim 6, 8, 24, or 25, wherein the protruding electrode is an Au bump.   The semiconductor sensor device according to any one of claims 8, 24, and 25, wherein a gap is formed between an upper surface of the sensor element and the control circuit element.   28. The semiconductor sensor device according to claim 27, wherein the gap portion has a height of 20 [mu] m to 100 [mu] m.   The semiconductor sensor device according to any one of claims 8, 24, 25, 27, and 28, wherein a resin member is formed on an outer peripheral portion of the control circuit element over the entire periphery.   30. The semiconductor sensor device according to claim 29, wherein the resin member is a thermosetting resin.   The semiconductor sensor device according to claim 30, wherein the thermosetting resin is an epoxy resin.   24. The semiconductor sensor device according to claim 22, wherein the adhesive layer has a thickness of 10 to 20 [mu] m.