JPH05215767A - Semiconductor acceleration sensor - Google Patents
Semiconductor acceleration sensorInfo
- Publication number
- JPH05215767A JPH05215767A JP31828591A JP31828591A JPH05215767A JP H05215767 A JPH05215767 A JP H05215767A JP 31828591 A JP31828591 A JP 31828591A JP 31828591 A JP31828591 A JP 31828591A JP H05215767 A JPH05215767 A JP H05215767A
- Authority
- JP
- Japan
- Prior art keywords
- sensor chip
- insulating substrate
- sensor
- semiconductor acceleration
- stem
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Pressure Sensors (AREA)
- Wire Bonding (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体加速センサに関
し、特に半導体加速度センサチップをマウントする構造
を改良した半導体加速度センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration sensor, and more particularly to a semiconductor acceleration sensor having an improved structure for mounting a semiconductor acceleration sensor chip.
【０００２】[0002]
【従来の技術】従来の半導体加速度センサは、半導体加
速度センサチップを上下からストッパで保護したものを
絶縁基板上に搭載する構造が採用されている。2. Description of the Related Art A conventional semiconductor acceleration sensor has a structure in which a semiconductor acceleration sensor chip protected by stoppers from above and below is mounted on an insulating substrate.
【０００３】図３は従来の一例を示す半導体加速度セン
サの断面図である。図３に示すように、従来の半導体加
速度センサは周辺回路が形成された絶縁基板３の上に上
部ストッパ２と下部ストッパ１６が接合されたセンサチ
ップ１をマウント材１０により接合している。このセン
サチップ１と上部ストッパ２および下部ストッパ１６と
はシリコン三次元加工により作られており、センサチッ
プ１には加速度を検出するための重り部５と梁部４が形
成されている。この梁部４上にはゲージ抵抗（図示省
略）が形成されており、加速度をこのゲージ抵抗の変化
で検出している。また、上部ストッパ２と下部ストッパ
１６は過負荷による梁部４の破損を防止するためにそれ
ぞれ内側に凹部を形成するとともに、接着剤９によりセ
ンサチップ１と接合されている。かかるセンサチップ１
上の加速度検出用回路（図示省略）と絶縁基板３上の周
辺回路の接続は、ボンディングパッド６とステッチラン
ド７との間をボンディングワイヤ８で配線して行ってい
る。FIG. 3 is a sectional view of a conventional semiconductor acceleration sensor as an example. As shown in FIG. 3, in a conventional semiconductor acceleration sensor, a sensor chip 1 in which an upper stopper 2 and a lower stopper 16 are joined is joined by a mount material 10 on an insulating substrate 3 in which peripheral circuits are formed. The sensor chip 1, the upper stopper 2 and the lower stopper 16 are made by silicon three-dimensional processing, and the sensor chip 1 has a weight portion 5 and a beam portion 4 for detecting acceleration. A gauge resistance (not shown) is formed on the beam portion 4, and the acceleration is detected by the change in the gauge resistance. In addition, the upper stopper 2 and the lower stopper 16 each have a recess formed inside to prevent damage to the beam portion 4 due to overload, and are joined to the sensor chip 1 by an adhesive agent 9. Such a sensor chip 1
The upper acceleration detection circuit (not shown) and the peripheral circuit on the insulating substrate 3 are connected by bonding wires 8 between the bonding pads 6 and the stitch lands 7.
【０００４】このように、従来の半導体加速度センサ
は、センサチップを上下からサンドイッチ構造にしたも
のを絶縁基板等に搭載して形成している。As described above, the conventional semiconductor acceleration sensor is formed by mounting a sensor chip having a sandwich structure from above and below on an insulating substrate or the like.
【０００５】[0005]
【発明が解決しようとする課題】上述した従来の半導体
加速度センサは、センサチップの上下に上部ストッパと
下部ストッパを接合しているため、センサ自体の厚さが
厚くなってしまうという欠点がある。また、従来の半導
体加速度センサは下部ストッパがあるため、その厚さだ
けボンディングパッドとステッチランドの段差が大きく
なり、ボンディングワイヤ距離が長くなるとともに、実
装面積を大きくするという欠点がある。The conventional semiconductor acceleration sensor described above has a drawback that the sensor itself becomes thick because the upper stopper and the lower stopper are joined to the upper and lower sides of the sensor chip. Further, since the conventional semiconductor acceleration sensor has a lower stopper, there is a drawback that the step difference between the bonding pad and the stitch land is increased by the thickness thereof, the bonding wire distance is increased, and the mounting area is increased.
【０００６】本発明の目的は、かかるセンサ自体の高さ
を低くし、しかもボンディングワイヤの距離を短かくし
て実装面積を小さくするとともにワイヤボンディング性
を向上することのできる半導体加速度センサを提供する
ことにある。An object of the present invention is to provide a semiconductor acceleration sensor capable of reducing the height of the sensor itself, shortening the bonding wire distance to reduce the mounting area, and improving the wire bonding property. is there.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体加速度セ
ンサは、半導体基板の中央に形成した重りおよび前記重
り部を支えるためにその両側に形成した梁部を備えたセ
ンサチップと、前記センサチップの上面に固着させる上
部ストッパと、前記センサチップを搭載する絶縁基板も
しくはステムとを有し、前記センサチップを接着する前
記絶縁基板もしくは前記ステム材のマウント領域に、前
記センサチップよりも狭く且つ前記重り部より広い凹部
を形成して構成される。A semiconductor acceleration sensor according to the present invention comprises a sensor chip having a weight formed in the center of a semiconductor substrate and beam portions formed on both sides of the weight portion for supporting the weight portion, and the sensor chip. Has an upper stopper fixed to the upper surface of the sensor chip, and an insulating substrate or stem on which the sensor chip is mounted, and is narrower than the sensor chip in the mount region of the insulating substrate or the stem material to which the sensor chip is bonded It is configured by forming a concave portion wider than the weight portion.
【０００８】[0008]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【０００９】図１は本発明の一実施例を示す半導体加速
度センサの構造断面図である。図１に示すように、本実
施例は中央部に重り部５を形成し且つその両側に梁部４
を形成したセンサチップ１と、その上部に接着する上部
ストッパ２と、センサチップ１をマウント材１０により
直接搭載する絶縁基板３とを有している。このセンサチ
ップ１の電気的接続はボンディングパッド６と絶縁基板
３上のステッチランド７との間をボンディングワイヤ８
により接続される。しかも、絶縁基板３は温度補償や加
速度感度校正などの回路及びセンチチップ１のマウント
領域より狭く且つ重り部５よりも広い基板凹部１２を形
成している。また、センサチップ１はシリコンの三次元
加工により重り部５と梁部４が形成されており、そのセ
ンサチップ１の上面には加速度検出用の回路を有してい
る。また、組立てに当っては、絶縁基板３の上に基板凹
部１２と重り部５が対応するようにセンサチップ１をマ
ウント材１０でマウントし、更にセンサチップ１の上に
上部ストッパ２を接着剤９で接合する。従って、センサ
チップ１の上面と上部ストッパ２の凹部及び重り部５と
基板凹部１２の間には一定の間隙が形成され、重り部５
が間隙以上に変位することを防止している。FIG. 1 is a structural sectional view of a semiconductor acceleration sensor showing an embodiment of the present invention. As shown in FIG. 1, in this embodiment, a weight portion 5 is formed in the central portion and beam portions 4 are formed on both sides thereof.
It has a sensor chip 1 on which the sensor chip 1 is formed, an upper stopper 2 bonded to the upper part thereof, and an insulating substrate 3 on which the sensor chip 1 is directly mounted by a mount material 10. The electrical connection of the sensor chip 1 is made by connecting a bonding wire 8 between the bonding pad 6 and the stitch land 7 on the insulating substrate 3.
Connected by. Moreover, the insulating substrate 3 is formed with a circuit recess 12 which is narrower than the mounting region of the centimeter chip 1 and wider than the weight portion 5 and circuits for temperature compensation and acceleration sensitivity calibration. Further, the sensor chip 1 has a weight portion 5 and a beam portion 4 formed by three-dimensional processing of silicon, and the upper surface of the sensor chip 1 has a circuit for acceleration detection. In assembly, the sensor chip 1 is mounted on the insulating substrate 3 so that the substrate recess 12 and the weight portion 5 correspond to each other, and the upper stopper 2 is attached to the sensor chip 1 with an adhesive. Join at 9. Therefore, a certain gap is formed between the upper surface of the sensor chip 1, the recess of the upper stopper 2, and the weight portion 5 and the substrate recess 12, and the weight portion 5 is formed.
Is prevented from being displaced beyond the gap.
【００１０】図２は本発明の他の実施例を示す半導体加
速度センサの構造断面図である。図２に示すように、本
実施例は金属ステムタイプの半導体加速度センサの例で
あり、ステム１３はセンサチップ１のマウント領域より
狭く且つ重り部５より広いステム凹部１５を形成してい
る。また、センサチップ１と上部ストッパ２は前述した
一実施例と同様に接着剤９により接合される。このセン
サチップ１はステム凹部１５と重り部５が対応するよう
にした上でステム１３にマウント材１０によりマウント
される。センサチップの上面と上部ストッパ２の凹部及
び重り部５とステム凹部１５の間には一定の間隙があ
り、重り部５が間隙以上に変位することを防止してい
る。電気的接続はセンサチップ１上のボンディングパッ
ド６とステム端子１４との間をボンディングワイヤ８で
接続する。FIG. 2 is a structural sectional view of a semiconductor acceleration sensor showing another embodiment of the present invention. As shown in FIG. 2, this embodiment is an example of a metal stem type semiconductor acceleration sensor, and the stem 13 has a stem recess 15 narrower than the mount area of the sensor chip 1 and wider than the weight portion 5. Further, the sensor chip 1 and the upper stopper 2 are bonded with the adhesive 9 as in the above-described embodiment. The sensor chip 1 is mounted on the stem 13 by the mount material 10 after making the stem recess 15 and the weight 5 correspond to each other. There is a fixed gap between the upper surface of the sensor chip, the recess of the upper stopper 2, and the weight portion 5 and the stem recess 15 to prevent the weight portion 5 from being displaced beyond the gap. For electrical connection, the bonding pad 6 on the sensor chip 1 and the stem terminal 14 are connected by a bonding wire 8.
【００１１】上述した二つの実施例によれば、周辺回路
を形成した絶縁基板などに凹部を形成することにより、
直接センサチップを絶縁基板にマウントできるので、下
部ストッパも不要になり、センサ自体の高さを低くする
とともに、ボンディングワイヤの距離を短縮することが
でき、実装面積を減少させることができる。According to the above-described two embodiments, by forming the concave portion in the insulating substrate having the peripheral circuit formed thereon,
Since the sensor chip can be directly mounted on the insulating substrate, the lower stopper is not required, the height of the sensor itself can be reduced, the distance of the bonding wire can be shortened, and the mounting area can be reduced.
【００１２】一般的寸法からいえば、第１ボンドから第
２ボンドまでの距離は、ボンディング高さの３．５倍必
要とする。しかるに、従来はセンサチップの厚さ５００
μｍと下部ストッパの厚さ５００μｍを合わせた１００
０μｍの高さがあったため、第１ボンドから第２ボンド
までの距離は３５００μｍの距離が必要であったが、本
実施例によれば下部ストッパが不要になるので、第１ボ
ンドから第２ボンドまでの距離は１７５０μｍで十分と
なる。これを実装面積で比較すると、５ｍｍ角のセンサ
チップ４辺からボンディングワイヤを取り出したときの
センサチップの実装面積は従来の１４４ｍｍ2 に比べ
て、本実施例では７２．２５ｍｍ2 となり、センサ自体
を小型化することができる。In general terms, the distance from the first bond to the second bond is 3.5 times the bonding height. However, in the past, the thickness of the sensor chip was 500
100 μm combined with the thickness of the lower stopper 500 μm
Since the height was 0 μm, the distance from the first bond to the second bond needed to be 3500 μm. However, according to the present embodiment, the lower stopper is not required. Therefore, from the first bond to the second bond. A distance of 1750 μm is sufficient. Comparing this with the mounting area, the mounting area of the sensor chip when the bonding wires are taken out from the four sides of the 5 mm square sensor chip is 72.25 mm 2 in the present embodiment, compared to the conventional 144 mm 2 , and the sensor itself is It can be miniaturized.
【００１３】また、ステムタイプのセンサについては、
下部ストッパの厚さ（５００μ）だけステム端子を短く
できるので、ボンディング時に重要な超音波や熱が伝わ
り易くなり、ステム端子へのボンディング性が向上す
る。Regarding the stem type sensor,
Since the stem terminal can be shortened by the thickness of the lower stopper (500 μ), important ultrasonic waves and heat are easily transmitted during bonding, and the bondability to the stem terminal is improved.
【００１４】[0014]
【発明の効果】以上説明したように、本発明の半導体加
速度センサは、センサチップを絶縁基板に直接搭載し、
しかもそのマウント領域にセンサチップの幅よりも狭く
且つ重り部よりも広い凹部を形成することにより、下部
ストッパが不要になり、センサ自体の高さを低くすると
ともに、ボンディングワイヤの距離を短縮することがで
き、実装面積を小さくすることができるという効果があ
る。As described above, in the semiconductor acceleration sensor of the present invention, the sensor chip is directly mounted on the insulating substrate,
Moreover, by forming a recess that is narrower than the width of the sensor chip and wider than the weight in the mounting area, the lower stopper is not required, and the height of the sensor itself is reduced and the distance of the bonding wire is shortened. Therefore, there is an effect that the mounting area can be reduced.
【図１】本発明の一実施例を示す半導体加速度センサの
断面図である。FIG. 1 is a sectional view of a semiconductor acceleration sensor showing an embodiment of the present invention.
【図２】本発明の他の実施例を示す半導体加速度センサ
の断面図である。FIG. 2 is a sectional view of a semiconductor acceleration sensor showing another embodiment of the present invention.
【図３】従来の一例を示す半導体加速度センサの断面図
である。FIG. 3 is a sectional view of a conventional semiconductor acceleration sensor showing an example.
１ センサチップ ２ 上部ストッパ ３ 絶縁基板 ４ 梁部 ５ 重り部 ６ ボンディングパッド ７ ステッチランド ８ ボンディングワイヤ ９ 接着剤 １０ マウント材 １１ ストッパ凹部 １２ 基板凹部 １３ ステム １４ ステム端子 １５ ステム凹部 1 Sensor Chip 2 Upper Stopper 3 Insulating Substrate 4 Beam Section 5 Weight Section 6 Bonding Pad 7 Stitch Land 8 Bonding Wire 9 Adhesive 10 Mounting Material 11 Stopper Recess 12 Board Recess 13 Stem 14 Stem Terminal 15 Stem Recess
Claims (2)
前記重り部を支えるためにその両側に形成した梁部を備
えたセンサチップと、前記センサチップの上面に固着さ
せる上部ストッパと、前記センサチップを搭載する絶縁
基板もしくはステムとを有し、前記センサチップを接着
する前記絶縁基板もしくは前記ステム材のマウント領域
に、前記センサチップよりも狭く且つ前記重り部より広
い凹部を形成することを特徴とする半導体加速度セン
サ。1. A sensor chip having a weight formed in the center of a semiconductor substrate and beam portions formed on both sides of the weight to support the weight portion, an upper stopper fixed to the upper surface of the sensor chip, and the sensor chip. An insulating substrate or a stem for mounting the sensor chip, and forming a recess narrower than the sensor chip and wider than the weight portion in a mount region of the insulating substrate or the stem material to which the sensor chip is bonded. Semiconductor acceleration sensor.
により前記絶縁基板上のステッチランドもしくは前記ス
テム材のステム端子に接続されることを特徴とする請求
項１記載の半導体加速度センサ。2. The semiconductor acceleration sensor according to claim 1, wherein the sensor chip is connected to a stitch land on the insulating substrate or a stem terminal of the stem material by a bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31828591A JPH05215767A (en) | 1991-12-03 | 1991-12-03 | Semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31828591A JPH05215767A (en) | 1991-12-03 | 1991-12-03 | Semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05215767A true JPH05215767A (en) | 1993-08-24 |
Family
ID=18097503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31828591A Withdrawn JPH05215767A (en) | 1991-12-03 | 1991-12-03 | Semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05215767A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009063551A (en) * | 2007-09-10 | 2009-03-26 | Rohm Co Ltd | Semiconductor sensor device |
-
1991
- 1991-12-03 JP JP31828591A patent/JPH05215767A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009063551A (en) * | 2007-09-10 | 2009-03-26 | Rohm Co Ltd | Semiconductor sensor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990311 |