JP2009068893A5 - - Google Patents

Claims (40)

A sensor element made of silicon formed using semiconductor process technology;
A package for housing the sensor element;
The sensor element includes a support frame, a structure disposed inside the support frame, and a beam portion that swingably supports the structure on the support frame,
An integrated circuit portion electrically connected to the sensor element is formed in at least a part of the upper surface region of the structure body. A sensor element made of silicon;
  A package for housing the sensor element;
  The sensor element includes a support frame, a structure disposed inside the support frame, and a beam portion that swingably supports the structure on the support frame,
  An integrated circuit portion electrically connected to the sensor element is formed in a part of the upper surface region of the structure body. A sensor element;
  A package for housing the sensor element;
  The sensor element includes a support frame, a structure disposed inside the support frame, and a beam portion that swingably supports the structure on the support frame,
  An integrated circuit portion is formed in the structure, and a semiconductor device. By forming a piezoresistive element in the beam portion of the sensor element, the sensor element is configured as a piezoresistive acceleration sensor element that detects acceleration according to the amount of displacement of the structure. The semiconductor device according to claim 1, wherein: The structure includes a rectangular parallelepiped first structure supported by the support frame via the beam portion, and a plurality of rectangular parallelepiped second structures integrally connected to the first structure. Including
The integrated circuit portion is characterized by being formed in at least one of the upper surface area of the plurality of second structures, the semiconductor device according to any one of claims 1 to 4. 6. The semiconductor device according to claim 5 , wherein the integrated circuit section is formed in each of an upper surface region of the first structure body and an upper surface region of the plurality of second structure bodies. An electrode terminal portion is provided on the upper surface region of the support frame, and a part of the plurality of second structures and the support frame are connected by a connecting portion,
The connecting portion, characterized in that it is configured to function as said electrode terminal portion of the support frame and the integrated circuit section as a connection path for electrically connecting to claim 5 or 6 The semiconductor device described. The integrated circuit unit, in addition to the upper surface area of said structure, characterized in that it is formed in an upper surface region of the support frame, a semiconductor device according to any one of claims 1-7. The integrated circuit unit is configured to have a function of amplifying and correcting an electrical detection signal detected based on the movement of the structure and outputting the amplified signal as a voltage proportional to a physical quantity. to the semiconductor device according to any one of claims 1-8. The semiconductor device according to claim 1, wherein the support frame, the structure body, and the beam portion are integrally formed by processing an SOI substrate. The said support frame of the said sensor element is formed in the substantially rectangular frame shape seeing planarly, and has the substantially square-shaped opening part in the center part, The 1-10 characterized by the above-mentioned. The semiconductor device according to any one of the above. The semiconductor device according to claim 1, wherein the support frame includes a support substrate, an insulating layer, and a silicon layer. The semiconductor device according to claim 1, wherein a gap is provided between the second structure, the support frame, and the beam portion. The gap is configured to have such a size that the second structure does not come into contact with the support frame or the beam portion when the structure swings due to acceleration. The semiconductor device according to any one of 5 to 13. The semiconductor device according to claim 1, wherein the beam portion is formed of a silicon layer of an SOI substrate and is formed in a strip shape. The semiconductor device according to claim 1, wherein the beam portion has a thickness smaller than that of the support frame. The one end portion of the beam portion is integrally connected to the inner side surface of the support frame, and the other end portion is integrally connected to the inner side surface of the structure. The semiconductor device of any one of -16. The beam portion extends in a predetermined first direction and sandwiches the first structure, and the beam portion extends in a second direction intersecting the first direction and sandwiches the first structure. The semiconductor device according to claim 1, wherein the semiconductor device is divided into a set of two beam portions. The said integrated circuit part is electrically connected with the said piezoresistive element comprised in the Wheatstone bridge circuit through the wiring layer, The any one of Claims 4-18 characterized by the above-mentioned. Semiconductor device. The semiconductor device according to claim 7, wherein the electrode terminal portion is electrically connected to the integrated circuit portion via the wiring layer. 21. The semiconductor device according to claim 20, wherein the electrode terminal portion has a function as an electrode terminal for outputting an electric signal amplified and corrected by the integrated circuit to the outside. The semiconductor device according to claim 1, wherein the package includes a lower container and an upper lid. 23. The semiconductor device according to claim 22, wherein the lower container is composed of a ceramic container having a laminated structure and has a cavity. 24. The semiconductor device according to claim 23, wherein a step surface lower than an upper surface of the lower container is formed on the cavity side of the side wall of the lower container. 25. The semiconductor device according to claim 24, wherein a pad electrode electrically connected to the electrode terminal portion of the sensor element is formed on the step surface via a bonding wire. The semiconductor device according to any one of claims 22 to 25, wherein an electrode terminal electrically connected to the wiring layer is formed on a lower surface of the lower container. 27. The semiconductor device according to claim 26, wherein the electrode terminal and the pad electrode are electrically connected to each other via a wiring portion formed inside the lower container. The semiconductor device according to any one of claims 1 to 27, wherein the sensor element is fixed to a central region of the bottom surface of the cavity of the lower container via an adhesive layer. 29. The semiconductor device according to claim 23, wherein a gap is formed between a bottom surface of the cavity of the lower container and the sensor element. 30. The semiconductor device according to claim 29, wherein the gap portion has a height of 50 [mu] m to 100 [mu] m. 31. The semiconductor device according to claim 25, wherein the bonding wire is made of a fine metal wire made of Au or Al. 26. The semiconductor device according to claim 23, wherein the cavity is sealed by the upper lid. The upper lid is fixed to the upper surface of the lower container by an adhesive layer made of a thermosetting resin so as to seal the cavity of the lower container. 2. A semiconductor device according to item 1. The semiconductor device according to any one of claims 22 to 33, wherein the upper lid is made of 42 alloy alloy or stainless steel. The semiconductor device according to claim 1, wherein the inside of the package is purged with nitrogen gas or dry air. The semiconductor device according to claim 7, wherein a corner portion of one of the second structures is integrally connected to an inner surface of a support frame by the connecting portion. apparatus. The semiconductor device according to claim 7, wherein the connection part includes a silicon layer. The said connection part is comprised so that it may function as a connection path | route for electrically connecting the said integrated circuit and the said pad electrode, The any one of Claims 25-27 characterized by the above-mentioned. Semiconductor device. The semiconductor device according to claim 1, wherein the sensor element is an acceleration sensor element that detects acceleration in a direction other than the three-axis direction. 40. The semiconductor device according to claim 1, wherein the entire sensor element is made of an SOI substrate.