JP2009070894A5 - - Google Patents

Claims (34)

A sensor element including a support frame and a movable part supported by the support frame via a support part;
A protective member for protecting the sensor element;
At least a first resin sealing layer having elasticity for sealing the sensor element;
A semiconductor device comprising a second resin sealing layer that is made of a material different from that of the first resin sealing layer and seals the sensor element via the first resin sealing layer. . A sensor element including a support frame and a movable part supported by the support frame via a support part;
  A protective member covering the sensor element;
  A first resin sealing layer having elasticity for sealing the sensor element;
  A semiconductor device comprising a second resin sealing layer that is made of a material different from that of the first resin sealing layer and seals the sensor element through the first resin sealing layer. . Further comprising a semiconductor element electrically connected to the sensor element;
The protective member is characterized by being composed of said semiconductor element, a semiconductor device according to claim 1 or 2. The movable part and the support part are arranged in a region inside the support frame in a plan view,
The semiconductor element has, on the upper surface of the sensor element, characterized in that it is flip-chip mounted so as to cover the movable portion and the support portion, the semiconductor device according to claim 3. It said sensor element is characterized by a semiconductor acceleration sensor element for detecting the acceleration in accordance with the displacement amount of the movable portion, the semiconductor device according to any one of claims 1-4. The semiconductor device according to claim 3 , wherein a piezoresistive element is formed in the support portion of the sensor element. The said sensor element is comprised by the 2nd resin sealing layer, and is comprised by the package form of QFN type or BGA type, The any one of Claims 1-4 characterized by the above-mentioned. Semiconductor device. The semiconductor device according to claim 1, wherein the semiconductor device has a lead frame. The semiconductor device according to claim 3, wherein the semiconductor element is a control circuit element. 9. The semiconductor device according to claim 8, wherein the lead frame is made of a metal plate made of copper containing phosphor bronze or carbon-free copper or an alloy material thereof. The semiconductor device according to claim 8, wherein the lead frame includes a die pad and a lead terminal separated from the die pad. The semiconductor device according to claim 11, wherein the sensor element is fixed on the die pad via an adhesive layer. The semiconductor device according to claim 12, wherein the adhesive layer is made of a solder material or a silver paste. The semiconductor device according to claim 12, wherein a gap portion having a height of 50 μm to 100 μm is formed between the die pad and the sensor element by the adhesive layer. The semiconductor device according to claim 12, wherein the adhesive layer is formed over the entire circumference of the outer peripheral portion of the sensor element. The semiconductor device according to claim 1, wherein the movable portion is disposed inside the support frame. The movable part of the sensor element includes a core part supported by the support frame via the support part, and an accompanying part integrally connected to the core part in plan view. The semiconductor device according to claim 1. The semiconductor device according to claim 1, wherein the lead terminal is electrically connected to the sensor element via a bonding wire. The semiconductor device according to claim 1, wherein the sensor element includes an acceleration sensor element capable of detecting an acceleration in a triaxial direction. The semiconductor device according to claim 1, wherein a gap is provided between the accompanying portion, the support frame, and the support portion. 21. The semiconductor device according to claim 20, wherein the gap is configured to have a size such that the associated portion does not contact the support frame or the support portion. The semiconductor device according to claim 9, wherein the control circuit element has a function of amplifying and correcting an electric signal detected by the sensor element and outputting the electric signal as a voltage proportional to acceleration. . The semiconductor device according to claim 9, wherein the control circuit element is configured to have a larger planar area than an opening of the sensor element, and a protruding electrode is formed at a corner of the main surface. The semiconductor device according to claim 23, wherein the protruding electrode is made of an Au bump. 25. The semiconductor device according to claim 24, wherein the control circuit element is fixed on the upper surface of the sensor element so that the protruding electrode and an electrode pad of the sensor element are electrically connected. . The semiconductor device according to claim 9, wherein the control circuit element is fixed on an upper surface of the sensor element so as to cover an opening of the support frame. 27. The gap portion according to any one of claims 23 to 26, wherein a gap portion having a height of 50 μm is formed between the sensor element and the control circuit element by the protruding electrode. Semiconductor device. The semiconductor device according to any one of claims 12 to 14, wherein an adhesive layer is formed on an outer peripheral portion of the control circuit element over the entire periphery. 29. The semiconductor device according to claim 1, wherein the first resin sealing layer is made of a resin material having elasticity. 30. The semiconductor device according to claim 1, wherein the first resin sealing layer is made of a transparent resin. The said 1st resin sealing layer is formed so that the said sensor element and the said control circuit element may be sealed on the said die pad by potting, The any one of Claims 11-14 characterized by the above-mentioned. The semiconductor device according to item. The said 2nd resin sealing layer is formed so that the said sensor element and the said control circuit element may be sealed via the said 1st resin sealing layer, The any one of Claims 1-31 characterized by the above-mentioned. 2. The semiconductor device according to claim 1. The semiconductor device according to claim 1, wherein the semiconductor device is a QFN type or BGA type package. The semiconductor device according to claim 1, wherein the sensor element is a capacitive acceleration sensor element.