JP5357100B2 - Force sensor package and manufacturing method thereof - Google Patents

Force sensor package and manufacturing method thereof Download PDF

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Publication number
JP5357100B2
JP5357100B2 JP2010090868A JP2010090868A JP5357100B2 JP 5357100 B2 JP5357100 B2 JP 5357100B2 JP 2010090868 A JP2010090868 A JP 2010090868A JP 2010090868 A JP2010090868 A JP 2010090868A JP 5357100 B2 JP5357100 B2 JP 5357100B2
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substrate
sensor
package
force sensor
manufacturing
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JP2011220865A (en
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英治 梅津
元輝 平山
英紀 牛膓
昌彦 石曽根
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

<P>PROBLEM TO BE SOLVED: To provide a force sensor package enabling cost reduction and a manufacturing method of the same. <P>SOLUTION: The force sensor package comprises: a sensor substrate where a plurality of piezoresistance elements are formed to detect electrically a displacement magnitude which is caused when a load is applied via pressure receiving parts protrusively provided on a substrate surface; and a base substrate on which an electric wiring part connecting with the plurality of piezoresistance elements is formed. The force sensor package is provided by fixedly bonding the base substrate joined by the sensor substrate to a package substrate. The sensor substrate and the base substrate on the package substrate are covered by encapsulation resin in a manner that a height of a front face of the encapsulation resin is lower than that of sensor substrate. <P>COPYRIGHT: (C)2012,JPO&amp;INPIT

Description

本発明は、荷重測定用のフォースセンサパッケージ及びその製造方法に関する。   The present invention relates to a force sensor package for measuring a load and a manufacturing method thereof.

近年では、モバイル機器のタッチパネルやコントローラ等のユーザーインターフェースに荷重測定用のフォースセンサが用いられている。フォースセンサは種々あるが、例えば図11に示されるピエゾ抵抗方式では、ダイヤフラム部を有するシリコン基板110と、ダイヤフラム部上に設けた複数のゲージ抵抗からなるブリッジ回路(図示せず)と、ダイヤフラム部上に突設した球体からなる受圧部112とを備え、この受圧部112を介して受けた荷重に応じてダイヤフラム部が変位し、その変位量に応じてブリッジ回路の出力が変化することから荷重を検出している。従来構造のフォースセンサは、特許文献1にも記載されている。   In recent years, force sensors for load measurement are used for user interfaces such as touch panels and controllers of mobile devices. There are various force sensors. For example, in the piezoresistive method shown in FIG. 11, a silicon substrate 110 having a diaphragm portion, a bridge circuit (not shown) including a plurality of gauge resistors provided on the diaphragm portion, and a diaphragm portion. A pressure receiving portion 112 made of a sphere projecting above, and the diaphragm portion is displaced according to the load received through the pressure receiving portion 112, and the output of the bridge circuit changes according to the displacement amount. Is detected. A force sensor having a conventional structure is also described in Patent Document 1.

特公平5−77304号公報Japanese Patent Publication No. 5-77304

このフォースセンサは、プラスチック製ケース201に接着固定し、該ケース201に設けたリードフレーム126とシリコン基板110に形成したブリッジ回路の電極パッドをボンディングワイヤー140により接続した後にプラスチック製カバー202で覆い、該カバー202に設けた穴202aから受圧部112のみを露出させることで、センサパッケージとしていた。しかし、プラスチック製ケース201及びカバー202を用いると、コストがかかりすぎてしまう。   This force sensor is bonded and fixed to a plastic case 201, and a lead frame 126 provided on the case 201 and an electrode pad of a bridge circuit formed on the silicon substrate 110 are connected by a bonding wire 140 and then covered with a plastic cover 202. By exposing only the pressure receiving portion 112 from the hole 202a provided in the cover 202, the sensor package is obtained. However, if the plastic case 201 and the cover 202 are used, the cost is excessive.

本発明は、低コスト化を図れるフォースセンサパッケージ及びその製造方法を得ることを目的とする。   It is an object of the present invention to obtain a force sensor package and a manufacturing method thereof that can reduce the cost.

本発明は、封止樹脂を用いれば受圧部を露出させた状態でセンサ構造部を覆うパッケージ構造を簡単かつ安価に実現できること、及び、センサ基板を封止樹脂で完全には覆わずにセンサ基板表面と封止樹脂表面の間に段差を設ければセンサ構造部に封止樹脂の影響を与えないことに着目して完成されたものである。   According to the present invention, if a sealing resin is used, a package structure that covers the sensor structure portion with the pressure receiving portion exposed can be realized easily and inexpensively, and the sensor substrate is not completely covered with the sealing resin. It was completed by paying attention to the fact that if the step is provided between the surface and the surface of the sealing resin, the sensor structure is not affected by the sealing resin.

すなわち、本発明は、基板表面に突設した受圧部を介して荷重を受けたときに変位し、該変位量を電気的に検出する複数のピエゾ抵抗素子が形成されたセンサ基板と、前記複数のピエゾ抵抗素子と電気的に接続する電気配線部が形成されたベース基板とを接合したセンサ構造部を有し、このセンサ構造部を、前記ベース基板を介してパッケージ基板に接着固定してなるフォースセンサパッケージにおいて、前記パッケージ基板上のセンサ基板及びベース基板を封止樹脂で覆い、かつ、該封止樹脂表面をセンサ基板表面より低く設けたことを特徴としている。   That is, the present invention provides a sensor substrate on which a plurality of piezoresistive elements that are displaced when receiving a load via a pressure receiving portion projecting from the substrate surface and electrically detect the amount of displacement are formed; A sensor structure part that is joined to a base substrate on which an electrical wiring part electrically connected to the piezoresistive element is formed, and this sensor structure part is bonded and fixed to the package substrate via the base substrate In the force sensor package, the sensor substrate and the base substrate on the package substrate are covered with a sealing resin, and the surface of the sealing resin is provided lower than the surface of the sensor substrate.

前記ベース基板の電気配線部と前記パッケージ基板をボンディングワイヤーで電気的に接続する場合は、このボンディングワイヤーを前記センサ基板表面より低く設けることが実際的である。この態様によれば、ボンディングワイヤーは封止樹脂により完全に覆われて保護される。   When the electrical wiring part of the base substrate and the package substrate are electrically connected by a bonding wire, it is practical to provide the bonding wire lower than the sensor substrate surface. According to this aspect, the bonding wire is completely covered and protected by the sealing resin.

前記パッケージ基板には、前記センサ構造部を接着固定した面とは反対側の面に、該センサ構造部の接着固定位置と平面的に重複させて、固定用端子が備えられてることが好ましい。この態様によれば、固定用端子を用いてパッケージ基板を固定することができ、荷重を受けるセンサ構造部を安定に支えられる。   Preferably, the package substrate is provided with a fixing terminal on a surface opposite to the surface on which the sensor structure portion is bonded and fixed so as to overlap with the bonding fixing position of the sensor structure portion in a plane. According to this aspect, the package substrate can be fixed using the fixing terminals, and the sensor structure that receives the load can be stably supported.

また前記パッケージ基板には、前記固定用端子を備えた面に、該パッケージ基板と外部回路を電気的に接続するためのSMD端子が複数備えられ、この複数のSMD端子のいずれかと前記固定用端子を兼用させることができる。   The package substrate is provided with a plurality of SMD terminals for electrically connecting the package substrate and an external circuit on a surface provided with the fixing terminals, and one of the plurality of SMD terminals and the fixing terminal are provided. Can also be used.

また本発明は、製造方法の態様によれば、基板表面に突設した受圧部を介して荷重を受けたときに変位し、該変位量を電気的に検出する複数のピエゾ抵抗素子が形成されたセンサ基板と、前記複数のピエゾ抵抗素子と電気的に接続する電気配線部が形成されたベース基板とを接合してなるセンサ構造部を多数形成する工程と、前記多数のセンサ構造部を該センサ構造部のベース基板を介してパッケージ基板上に接着固定し、各センサ構造部において前記ベース基板の電気配線部と前記パッケージ基板を電気的に接続する工程と、前記パッケージ基板上の多数のセンサ基板及びベース基板を封止樹脂で覆い、かつ、該封止樹脂表面をセンサ基板表面よりも低く設ける工程と、前記パッケージ基板を、1つのセンサ構造部からなるパッケージ単位で切断する工程とを有することを特徴としている。   According to the aspect of the manufacturing method of the present invention, there are formed a plurality of piezoresistive elements that are displaced when a load is received through a pressure receiving portion protruding from the substrate surface and that electrically detects the amount of displacement. A plurality of sensor structure parts formed by bonding a sensor substrate and a base substrate on which an electrical wiring part electrically connected to the plurality of piezoresistive elements is formed; and Bonding and fixing on the package substrate via the base substrate of the sensor structure portion, and electrically connecting the electrical wiring portion of the base substrate and the package substrate in each sensor structure portion, and a number of sensors on the package substrate A step of covering the substrate and the base substrate with a sealing resin and providing the surface of the sealing resin lower than the surface of the sensor substrate; and the package substrate comprising a single sensor structure unit. It is characterized by a step of cutting.

前記封止工程は、モールド金型の下金型に、前記多数のセンサ構造部を接着固定したパッケージ基板を設置するステップと、モールド金型の上金型の前記パッケージ基板と対向する側の面に、前記受圧部の突出高さより大きな厚さを有する離型フィルムを装着するステップと、前記上金型を前記下金型に接近させ、前記離型フィルムを前記多数のセンサ構造部の受圧部及びセンサ基板表面に当接させるステップと、この当接状態で、前記離型フィルムと前記パッケージ基板との間に生じるキャビティに封止樹脂を充填するステップと、この封止樹脂の硬化後に、前記離型フィルム及び上下金型を外すステップとを有することが好ましい。この一括モールド工程によれば、単一のパッケージ基板上で多数のセンサ構造部を同時に封止でき、生産性が向上する。   The sealing step includes a step of installing a package substrate in which the plurality of sensor structures are bonded and fixed to a lower mold of the mold, and a surface of the upper mold on the side facing the package substrate Mounting a release film having a thickness larger than the protruding height of the pressure receiving portion, bringing the upper mold close to the lower mold, and placing the release film on the pressure receiving portions of the multiple sensor structures And a step of contacting the surface of the sensor substrate, a step of filling the cavity formed between the release film and the package substrate with the sealing resin in the contact state, and after the curing of the sealing resin, It is preferable to have a step of removing the release film and the upper and lower molds. According to this collective molding process, a large number of sensor structures can be simultaneously sealed on a single package substrate, and productivity is improved.

本発明によれば、パッケージ基板上のセンサ基板及びベース基板を覆う封止樹脂の表面をセンサ基板表面より低く設けたので、受圧部がパッケージ表面に露出するパッケージ構造を容易かつ安価で実現でき、かつ、封止樹脂がセンサ特性に悪影響を及ぼすこともない。これにより、低コスト化を図れるフォースセンサパッケージ及びその製造方法を提供できる。   According to the present invention, since the surface of the sealing resin covering the sensor substrate and the base substrate on the package substrate is provided lower than the sensor substrate surface, the package structure in which the pressure receiving part is exposed on the package surface can be easily and inexpensively realized. In addition, the sealing resin does not adversely affect the sensor characteristics. Thereby, it is possible to provide a force sensor package and a manufacturing method thereof that can reduce the cost.

本発明を適用したフォースセンサパッケージの一実施形態を示す断面図である。It is sectional drawing which shows one Embodiment of the force sensor package to which this invention is applied. 同フォースセンサパッケージを示す外観斜視図である。It is an external appearance perspective view which shows the force sensor package. センサ基板の裏面(接合面)を示す平面図である。It is a top view which shows the back surface (joint surface) of a sensor board | substrate. ベース基板の表面(接合面)を示す平面図である。It is a top view which shows the surface (joining surface) of a base substrate. パッケージ基板の外面の端子部を示す平面図である。It is a top view which shows the terminal part of the outer surface of a package board | substrate. パッケージ端子の変形例(a)〜(c)を示す平面図である。It is a top view which shows the modification (a)-(c) of a package terminal. 本発明によるフォースセンサパッケージの製造方法の一工程を示す断面図である。It is sectional drawing which shows 1 process of the manufacturing method of the force sensor package by this invention. 図7の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図8の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図9の次工程を示す断面図である。FIG. 10 is a cross-sectional view showing the next step of FIG. 9. 従来構造のフォースセンサパッケージを示す(a)斜視図、(b)断面図である。It is the (a) perspective view and (b) sectional view showing the force sensor package of the conventional structure.

図1は本発明を適用したフォースセンサパッケージの一実施形態を示す断面図、図2はフォースセンサパッケージを示す外観斜視図、図3はセンサ基板の裏面(ベース基板との接合面)を示す平面図、図4はベース基板の表面(センサ基板との接合面)を示す平面図、図5はパッケージ基板の外面の端子部を示す平面図である。   FIG. 1 is a cross-sectional view showing an embodiment of a force sensor package to which the present invention is applied, FIG. 2 is an external perspective view showing the force sensor package, and FIG. 3 is a plan view showing the back surface of the sensor substrate (joint surface with the base substrate). 4 is a plan view showing the surface of the base substrate (bonding surface with the sensor substrate), and FIG. 5 is a plan view showing terminal portions on the outer surface of the package substrate.

フォースセンサパッケージ1は、ピエゾ抵抗方式のフォースセンサを封止樹脂50で封止したモールドパッケージであって、パッケージ基板30上に、対をなすセンサ基板10とベース基板20を接合してなるセンサ構造部を備えている。   The force sensor package 1 is a mold package in which a piezoresistive force sensor is sealed with a sealing resin 50, and a sensor structure in which a pair of sensor substrate 10 and base substrate 20 are joined on a package substrate 30. Department.

センサ基板10は、平面矩形状で巨視的に見て凹凸のない一定厚さのシリコン基板からなり、その基板中央部が荷重を受けて変位する変位部11を構成している。センサ基板表面10aには、図1、図2に示されるように、外部からの荷重を受ける受圧部12が設けられている。受圧部12は、変位部11の上に隆起した円柱状の凸受圧部であり、その上面周縁に丸め加工(R加工)が施されていると好ましい。この受圧部12は、ニッケル合金またはシリコン(センサ基板10と同一材質)からなる。受圧部12は省略可能であるが、変位部11上に受圧部12を設けることでセンサ感度を安定させることができる。一方、センサ基板裏面10bには、図1、図3に示されるように、歪検出素子としての複数のピエゾ抵抗素子13と、変位部11を変位自在に支持する支持部(センサ側支持部)14と、複数のピエゾ抵抗素子13と電気的に接続した複数の電気接続部(センサ側電気接続部)15と、ピエゾ抵抗素子13と電気接続部15間を接続する回路配線部16とが設けられている。図3は、ピエゾ抵抗素子13、支持部14、電気接続部15及び回路配線部16の平面的な位置関係を示すもので、全てを実線で描いている。   The sensor substrate 10 is formed of a silicon substrate having a flat rectangular shape with no unevenness when viewed macroscopically, and constitutes a displacement portion 11 whose central portion is displaced by receiving a load. As shown in FIGS. 1 and 2, the sensor substrate surface 10 a is provided with a pressure receiving portion 12 that receives a load from the outside. The pressure receiving portion 12 is a columnar convex pressure receiving portion raised above the displacement portion 11, and it is preferable that the upper surface periphery is rounded (R processing). The pressure receiving portion 12 is made of nickel alloy or silicon (the same material as the sensor substrate 10). Although the pressure receiving part 12 can be omitted, the sensor sensitivity can be stabilized by providing the pressure receiving part 12 on the displacement part 11. On the other hand, on the back surface 10b of the sensor substrate, as shown in FIGS. 1 and 3, a plurality of piezoresistive elements 13 as strain detection elements and a support part (sensor side support part) that supports the displacement part 11 so as to be displaceable. 14, a plurality of electrical connection portions (sensor-side electrical connection portions) 15 electrically connected to the plurality of piezoresistive elements 13, and a circuit wiring portion 16 that connects between the piezoresistive elements 13 and the electrical connection portions 15 are provided. It has been. FIG. 3 shows a planar positional relationship among the piezoresistive element 13, the support portion 14, the electrical connection portion 15, and the circuit wiring portion 16, and all are drawn with solid lines.

複数のピエゾ抵抗素子13は、変位部11の周縁部に沿って、隣り合う素子同士が90°異なる位相(互いに直交する位置関係)で配置されている。受圧部12で受けた荷重により変位部11が変位すると、その変位量に応じて複数のピエゾ抵抗素子13の電気抵抗が変化し、この複数のピエゾ抵抗素子13によって構成されたブリッジ回路の中点電位が変化し、この中点電位がセンサ出力として公知の測定装置に出力される。   The plurality of piezoresistive elements 13 are arranged along the peripheral edge of the displacement portion 11 with phases that are 90 ° different from each other (positions orthogonal to each other). When the displacement portion 11 is displaced by the load received by the pressure receiving portion 12, the electrical resistance of the plurality of piezoresistive elements 13 changes according to the amount of displacement, and the midpoint of the bridge circuit configured by the plurality of piezoresistive elements 13 The potential changes, and this midpoint potential is output as a sensor output to a known measuring device.

支持部14は、センサ基板裏面10bに突出形成され、変位部11の周縁部に沿って配置した複数のピエゾ抵抗素子13よりも基板周縁側(外側)で、かつ、少なくとも一部が複数のピエゾ抵抗素子13と平面的に重複するように位置している。本実施形態の支持部14は、図3に示すように平面環状(閉じた内周エッジを有する平面形状)をなし、変位部11の平面中心に関して対称な位置関係にあるので変位部11を安定に支持することができる。この支持部14は、下地層とAl、Ti、Cr、Ni、Cu、Ru、Rh、Ir、Pt、Ta、Fe、Auのいずれかまたは2つ以上を含む合金または2層以上の積層膜からなる金属接合層との積層構造で形成されている。支持部14の平面形状は閉じた形状であれば任意である。   The support portion 14 is formed so as to protrude from the sensor substrate back surface 10b, and is on the substrate peripheral side (outside) with respect to the plurality of piezoresistive elements 13 arranged along the peripheral portion of the displacement portion 11, and at least a part of the support portion 14 It is located so as to overlap with the resistive element 13 in plan view. As shown in FIG. 3, the support portion 14 of the present embodiment has a planar annular shape (a planar shape having a closed inner peripheral edge), and is in a symmetrical positional relationship with respect to the plane center of the displacement portion 11, so that the displacement portion 11 is stabilized. Can be supported. The support portion 14 is made of an underlayer and an alloy containing one or more of Al, Ti, Cr, Ni, Cu, Ru, Rh, Ir, Pt, Ta, Fe, and Au, or a laminated film of two or more layers. And a laminated structure with a metal bonding layer. The planar shape of the support part 14 is arbitrary as long as it is a closed shape.

複数の電気接続部15は、上記支持部14と同様にセンサ基板裏面10bに突出形成され、該支持部14よりもさらに基板周縁側(外側)に位置している。本実施形態では図3に示すように、各電気接続部15が円柱状をなし、平面矩形状をなすセンサ基板裏面10bの4つの角部にそれぞれ配置されている。複数の電気接続部15は、センサ基板10の対角線上で対向する一対が変位部11の平面中心に関して対称な位置関係にあるので、変位部11を安定に支持することができる。各電気接続部15は、下地層と、Al、Ti、Cr、Ni、Cu、Ru、Rh、Ir、Pt、Ta、Fe、Auのいずれかまたは2つ以上を含む合金または2層以上の積層膜からなる金属接合層との積層構造で形成されている。この複数の電気接続部15は、センサ基板裏面10bに形成された回路配線部16を介して、複数のピエゾ抵抗素子13と電気的に接続されている。複数のピエゾ抵抗素子13と回路配線部16は、絶縁膜17により覆われてセンサ基板裏面10bに露出しない。この複数の電気接続部15の平面形状も任意である。   The plurality of electrical connection portions 15 are formed so as to protrude from the sensor substrate back surface 10 b in the same manner as the support portion 14, and are located further to the substrate peripheral side (outside) than the support portion 14. In the present embodiment, as shown in FIG. 3, each electrical connection portion 15 has a cylindrical shape, and is disposed at each of four corners of the sensor substrate back surface 10b having a planar rectangular shape. The plurality of electrical connection portions 15 are symmetrically positioned with respect to the plane center of the displacement portion 11 because the pair of the electrical connection portions 15 that are opposed to each other on the diagonal line of the sensor substrate 10 can stably support the displacement portion 11. Each electrical connection portion 15 includes a base layer, an alloy containing one or more of Al, Ti, Cr, Ni, Cu, Ru, Rh, Ir, Pt, Ta, Fe, Au, or a laminate of two or more layers. It is formed in a laminated structure with a metal bonding layer made of a film. The plurality of electrical connection portions 15 are electrically connected to the plurality of piezoresistive elements 13 via circuit wiring portions 16 formed on the sensor substrate back surface 10b. The plurality of piezoresistive elements 13 and the circuit wiring portion 16 are covered with the insulating film 17 and are not exposed to the sensor substrate back surface 10b. The planar shape of the plurality of electrical connection portions 15 is also arbitrary.

ベース基板20は、平面矩形状で巨視的に見て凹凸のない一定厚さのシリコン基板からなり、センサ基板10を接合して支持する支持基板である。このベース基板20は、図4に示すように、センサ基板10との接合面となる表面20aに、センサ基板10の支持部14に対応する平面環状(閉じた内周エッジを有する平面形状)の支持部24と、センサ基板10の複数の電気接続部15に対応する円柱状の複数の電気接続部25と、各電気接続部25から引き出した電気配線の端部にワイヤーボンディング可能に形成した複数の電極パッド26とを備えている。センサ基板10との電気配線部は、電気接続部25及び複数の電極パッド26により構成されている。支持部24及び複数の電気接続部25は、ベース基板表面20aに突出形成されていて、センサ基板10の支持部14及び複数の電気接続部15と同様に、下地層と、Al、Ti、Cr、Ni、Cu、Ru、Rh、Ir、Pt、Ta、Fe、Auのいずれかまたは2つ以上を含む合金または2層以上の積層膜からなる金属接合層との積層構造で形成されている。電極パッド26は、下地層と、Al、Ti、Cr、Ni、Cu、Ru、Rh、Ir、Pt、Ta、Fe、Auのいずれかまたは2つ以上を含む合金または2層以上の積層膜からなる金属接合層と、例えばCu、Au、Al等からなるメッキ金属層とによる積層構造で形成されている。支持部24、複数の電気接続部25及び電極パッド26の各々の下地層及び金属接合層は同時に形成されたものである。   The base substrate 20 is a support substrate for bonding and supporting the sensor substrate 10 with a flat rectangular shape, which is made of a silicon substrate having a certain thickness with no irregularities when viewed macroscopically. As shown in FIG. 4, the base substrate 20 has a planar ring shape (a planar shape having a closed inner peripheral edge) corresponding to the support portion 14 of the sensor substrate 10 on a surface 20 a serving as a joint surface with the sensor substrate 10. A plurality of support portions 24, a plurality of cylindrical electrical connection portions 25 corresponding to the plurality of electrical connection portions 15 of the sensor substrate 10, and a plurality of wires formed so as to be capable of wire bonding at the ends of the electrical wiring drawn out from the respective electrical connection portions 25. Electrode pad 26. The electrical wiring part with the sensor substrate 10 is constituted by an electrical connection part 25 and a plurality of electrode pads 26. The support portion 24 and the plurality of electrical connection portions 25 are formed so as to protrude from the base substrate surface 20a. Like the support portion 14 and the plurality of electrical connection portions 15 of the sensor substrate 10, the base layer, Al, Ti, Cr , Ni, Cu, Ru, Rh, Ir, Pt, Ta, Fe, Au, or an alloy containing two or more, or a laminated structure with a metal bonding layer made of two or more laminated films. The electrode pad 26 is composed of an underlayer, an alloy containing one or more of Al, Ti, Cr, Ni, Cu, Ru, Rh, Ir, Pt, Ta, Fe, Au, or a laminated film of two or more layers. And a laminated structure of a plated metal layer made of, for example, Cu, Au, Al or the like. The underlayer and the metal bonding layer of each of the support portion 24, the plurality of electrical connection portions 25, and the electrode pads 26 are formed at the same time.

上記センサ基板10とベース基板20は、互いの支持部14、24及び互いの複数の電気接続部15、25を接合することにより一体化されて、センサ構造部を形成する。このセンサ構造部は、ベース基板20がパッケージ基板30上にダイボンディングされ、ベース基板20に設けた複数の電極パッド26がボンディングワイヤー40によってパッケージ基板30の複数の中継電極パッド36にそれぞれ接続され、この複数の中継電極パッド36を介して、パッケージ基板30の外面(センサ構造部を接着固定した面とは反対側の面)に設けた複数のSMD端子31と電気的に接続されている。すなわち、センサ構造部は、パッケージ基板30を介して外部実装可能な状態となっている。   The sensor substrate 10 and the base substrate 20 are integrated by joining the support portions 14 and 24 and the plurality of electrical connection portions 15 and 25 to form a sensor structure portion. In this sensor structure, the base substrate 20 is die-bonded on the package substrate 30, and a plurality of electrode pads 26 provided on the base substrate 20 are connected to a plurality of relay electrode pads 36 of the package substrate 30 by bonding wires 40, respectively. The plurality of relay electrode pads 36 are electrically connected to the plurality of SMD terminals 31 provided on the outer surface of the package substrate 30 (the surface opposite to the surface on which the sensor structure is bonded and fixed). That is, the sensor structure can be mounted externally via the package substrate 30.

ボンディングワイヤー40は、センサ基板表面10aよりも低く設けてある。ボンディングワイヤー40は、ベース基板20の電極パッド26との接続側に、ベース基板表面20aから100〜150μm程度起立する湾曲部を有しており、該湾曲部でその表面高さが最も高くなる。これに対し、センサ基板10の基板厚さは、ベース基板20との表面高さの差が200〜250μm程度となるように設定してある。   The bonding wire 40 is provided lower than the sensor substrate surface 10a. The bonding wire 40 has a curved portion standing about 100 to 150 μm from the base substrate surface 20a on the connection side of the base substrate 20 with the electrode pad 26, and the surface height is the highest at the curved portion. On the other hand, the substrate thickness of the sensor substrate 10 is set so that the difference in surface height from the base substrate 20 is about 200 to 250 μm.

パッケージ基板30の外面には、図5に示すように、パッケージ端子として上記複数のSMD端子31と固定用端子(半田付け端子)32が形成されている。複数のSMD端子31は平面矩形状をなすパッケージ基板30の角部にそれぞれ配置され、固定用端子32は、複数のSMD端子31で囲まれた中央部に設けられ、図5の破線で示すセンサ構造部(ベース基板20)の接着固定位置と平面的に重複している。固定用端子32を用いてパッケージ基板30を固定することで、外部からの荷重を受けるセンサ構造部を安定に支えられる。固定用端子32は、グランド端子として用いてもよい。   As shown in FIG. 5, the plurality of SMD terminals 31 and fixing terminals (soldering terminals) 32 are formed as package terminals on the outer surface of the package substrate 30. The plurality of SMD terminals 31 are respectively arranged at corners of the package substrate 30 having a planar rectangular shape, and the fixing terminal 32 is provided at the center portion surrounded by the plurality of SMD terminals 31, and is indicated by a broken line in FIG. It overlaps in plan view with the adhesion fixing position of the structure part (base substrate 20). By fixing the package substrate 30 using the fixing terminals 32, the sensor structure that receives a load from the outside can be stably supported. The fixing terminal 32 may be used as a ground terminal.

パッケージ基板30の外面に設けるパッケージ端子の配置態様は、適宜変形可能である。図6はパッケージ端子の変形例を示している。図6(a)は破線で示されるセンサ構造部(ベース基板20)の接着固定位置を図5の実施例と90°異ならせた変形例、図6(b)は図5のSMD端子31xと固定用端子32を連続させ、SMD端子と固定用端子の両方を兼ねた兼用端子33を設けた変形例、図6(c)は図6(a)のSDM端子31xと固定用端子32を連続させ、SMD端子と固定用端子の両方を兼ねた兼用端子33を設けた変形例である。   The arrangement of the package terminals provided on the outer surface of the package substrate 30 can be modified as appropriate. FIG. 6 shows a modification of the package terminal. FIG. 6A shows a modified example in which the adhesion fixing position of the sensor structure portion (base substrate 20) indicated by a broken line is different from that of the embodiment of FIG. 5 by 90 °, and FIG. 6B shows the SMD terminal 31x of FIG. FIG. 6C shows a modified example in which the fixing terminal 32 is made continuous and the dual-purpose terminal 33 that serves as both the SMD terminal and the fixing terminal is provided. FIG. 6C shows the SDM terminal 31x and the fixing terminal 32 shown in FIG. This is a modification in which a dual-purpose terminal 33 serving both as an SMD terminal and a fixing terminal is provided.

封止樹脂50は、その封止樹脂表面50aがセンサ基板表面10aよりも10〜100μm程度低くなるように設定され、パッケージ基板30上のセンサ基板10及びベース基板20を覆っている。すなわち、パッケージ表面には受圧部12を含むセンサ基板表面10aのみが露出する。封止樹脂50をセンサ基板表面10aより低く設けることで、該センサ基板表面10aにおいてセンサ基板10の基板周縁が開放されるので、封止樹脂50によって変位部11の変位を妨げることがなく、また、封止樹脂50の硬化時に生じる圧縮応力によってセンサ基板10を歪ませ、該歪みによりセンサ特性(センサ感度及びブリッジ回路の出力ゼロ点)が変動してしまうという事態を回避できる。   The sealing resin 50 is set so that the sealing resin surface 50 a is about 10 to 100 μm lower than the sensor substrate surface 10 a and covers the sensor substrate 10 and the base substrate 20 on the package substrate 30. That is, only the sensor substrate surface 10a including the pressure receiving portion 12 is exposed on the package surface. By providing the sealing resin 50 lower than the sensor substrate surface 10a, the peripheral edge of the sensor substrate 10 is opened on the sensor substrate surface 10a, so that the displacement of the displacement portion 11 is not hindered by the sealing resin 50, and Further, it is possible to avoid a situation in which the sensor substrate 10 is distorted by the compressive stress generated when the sealing resin 50 is cured, and the sensor characteristics (sensor sensitivity and output zero point of the bridge circuit) fluctuate due to the distortion.

また、封止樹脂50により、センサ基板10とベース基板20の接合及びベース基板20とパッケージ基板30の接合が強化されるとともに、センサ基板表面10aより低く設けたボンディングワイヤー40は完全に覆われて露出せず、配線接続の信頼性を確保できる。   Further, the sealing resin 50 enhances the bonding between the sensor substrate 10 and the base substrate 20 and the bonding between the base substrate 20 and the package substrate 30, and the bonding wire 40 provided lower than the sensor substrate surface 10 a is completely covered. The reliability of wiring connection can be secured without being exposed.

次に、図7〜図10を参照し、本発明によるフォースセンサパッケージの製造方法について説明する。図7〜図10は、フォースセンサパッケージの製造方法の一工程を示す断面図である。   Next, with reference to FIGS. 7-10, the manufacturing method of the force sensor package by this invention is demonstrated. 7-10 is sectional drawing which shows 1 process of the manufacturing method of a force sensor package.

先ず、上述の受圧部12、複数のピエゾ抵抗素子13、支持部14、複数の電気接続部15、回路配線部16及び絶縁膜17を形成したセンサ基板10(図3)と、上述の支持部24、複数の電気接続部25及び複数の電極パッド26を形成したベース基板20(図4)を互いの支持部14、24及び複数の電気接続部15、25を平面的に一致させて接合し、センサ構造部を多数形成する。本実施形態の支持部14、24は平面環状で形成してあるので、接合により支持部14、24で囲まれた空間が封止される。   First, the sensor substrate 10 (FIG. 3) on which the pressure receiving portion 12, the plurality of piezoresistive elements 13, the support portion 14, the plurality of electrical connection portions 15, the circuit wiring portion 16, and the insulating film 17 are formed, and the support portion described above. 24, the base substrate 20 (FIG. 4) on which the plurality of electrical connection portions 25 and the plurality of electrode pads 26 are formed is joined with the support portions 14 and 24 and the plurality of electrical connection portions 15 and 25 being planarly aligned. A large number of sensor structures are formed. Since the support portions 14 and 24 of the present embodiment are formed in a plane ring shape, the space surrounded by the support portions 14 and 24 is sealed by bonding.

次に、上述の複数のSMD端子31、固定用端子32及び複数の中継電極パッド36からなるパッケージ構造部を多数形成した単一のパッケージ基板(図1及び図5)を用意する。   Next, a single package substrate (FIGS. 1 and 5) is prepared in which a large number of package structures each including the plurality of SMD terminals 31, the fixing terminals 32, and the plurality of relay electrode pads 36 are formed.

次に、図7に示すように、多数のセンサ構造部をパッケージ基板30上に接着固定し、ベース基板20の複数の電極パッド26とパッケージ基板30の複数の中継電極パッド36をボンディングワイヤー40により電気的に接続する。ここで、センサ構造部の接着固定は、ベース基板20をパッケージ基板30に接着固定することで行う。また、ボンディングワイヤー40は、その表面高さをセンサ基板表面10aより低くなるように設ける。本実施形態では、ボンディングワイヤー40をベース基板20の電極パッド26との接続側で該ベース基板表面20aから上方に100〜150μm程度起立させて接続するが、ベース基板20とセンサ基板10の表面高さの差を200〜250程度確保してあるので、ボンディングワイヤー40の高さはセンサ基板表面10aよりも確実に低くなる。   Next, as shown in FIG. 7, a large number of sensor structures are bonded and fixed on the package substrate 30, and the plurality of electrode pads 26 of the base substrate 20 and the plurality of relay electrode pads 36 of the package substrate 30 are bonded by bonding wires 40. Connect electrically. Here, the sensor structure is bonded and fixed by bonding and fixing the base substrate 20 to the package substrate 30. Moreover, the bonding wire 40 is provided so that the surface height is lower than the sensor substrate surface 10a. In the present embodiment, the bonding wire 40 is connected to the base substrate 20 on the connection side with the electrode pads 26 by standing up from the base substrate surface 20 a by about 100 to 150 μm. Since a difference of about 200 to 250 is secured, the height of the bonding wire 40 is surely lower than the sensor substrate surface 10a.

続いて、図8に示すように、多数のセンサ構造部を接着固定したパッケージ基板30をモールド金型の下金型61に設置し、上金型62の該多数のセンサ構造部のセンサ基板10と対向する面(図の下面)に、シート状の離型フィルム70を装着する。離型フィルム70は、弾性変形可能であって、センサ基板表面10aに突設した受圧部12の突出高さよりも大きな厚さを有している。本実施形態では、受圧部12の突出高さが50〜150μm程度であるので、厚さ100〜300μm程度の離型フィルム70を用いる。この離型フィルム70を装着した状態で上下金型61、62を押し当てると、パッケージ基板30上で表面高さが最も高くなる受圧部12に離型フィルム70が押し当てられる。上述のように離型フィルム70の厚さは受圧部12とセンサ基板表面10aの表面高さの差よりも大きいので、離型フィルム70は、受圧部12の側面からセンサ基板表面10aに沿い、さらにセンサ基板10の外周ではセンサ基板表面10aよりも下方にフィルム下面70aが位置する。本実施形態では、フィルム下面70aがセンサ基板表面10aよりも10〜100μm程度下方に位置するように、上下金型61、62の押圧を調整している。   Subsequently, as shown in FIG. 8, the package substrate 30 to which a large number of sensor structure parts are bonded and fixed is placed on the lower mold 61 of the mold die, and the sensor substrate 10 of the large number of sensor structure parts of the upper mold 62. A sheet-like release film 70 is mounted on the surface (the lower surface in the figure) facing the surface. The release film 70 can be elastically deformed and has a thickness larger than the protruding height of the pressure receiving portion 12 protruding from the sensor substrate surface 10a. In this embodiment, since the protruding height of the pressure receiving portion 12 is about 50 to 150 μm, a release film 70 having a thickness of about 100 to 300 μm is used. When the upper and lower molds 61 and 62 are pressed against each other with the release film 70 mounted, the release film 70 is pressed against the pressure receiving portion 12 having the highest surface height on the package substrate 30. As described above, since the thickness of the release film 70 is larger than the difference in surface height between the pressure receiving portion 12 and the sensor substrate surface 10a, the release film 70 extends along the sensor substrate surface 10a from the side surface of the pressure receiving portion 12. Further, on the outer periphery of the sensor substrate 10, the film lower surface 70a is positioned below the sensor substrate surface 10a. In this embodiment, the pressing of the upper and lower molds 61 and 62 is adjusted so that the film lower surface 70a is positioned about 10 to 100 μm below the sensor substrate surface 10a.

続いて、モールド金型の下金型61と上金型62の間に形成した不図示の樹脂注入口から、図9に示すように離型フィルム60とパッケージ基板30との間に生じるキャビティに封止樹脂50を充填する。封止樹脂50が硬化したら、上下金型61、62とともに離型フィルム70を外す。封止樹脂50には、例えばエポキシ系樹脂またはフィラーを混入したエポキシ系樹脂を用いる。上述のように受圧部12及びセンサ基板表面10aには離型フィルム70が弾性変形した状態で押し当てられ、センサ基板表面10aの外周ではフィルム下面70aがセンサ基板表面10aより下方に位置しているので、センサ基板表面10aに封止樹脂50が入り込むことはなく、封止樹脂表面50aはセンサ基板表面10aより低くなる。図8〜図10のトランスファーモールド工程により、単一のパッケージ基板30上で多数のセンサ基板10、ベース基板20及びボンディングワイヤー40が一括封止され、封止樹脂50外には受圧部12を含むセンサ基板表面10aのみが露出する。   Subsequently, a cavity formed between the release film 60 and the package substrate 30 as shown in FIG. 9 from a resin injection port (not shown) formed between the lower mold 61 and the upper mold 62 of the mold. The sealing resin 50 is filled. When the sealing resin 50 is cured, the release film 70 is removed together with the upper and lower molds 61 and 62. For the sealing resin 50, for example, an epoxy resin or an epoxy resin mixed with a filler is used. As described above, the release film 70 is pressed against the pressure receiving portion 12 and the sensor substrate surface 10a in an elastically deformed state, and the film lower surface 70a is positioned below the sensor substrate surface 10a on the outer periphery of the sensor substrate surface 10a. Therefore, the sealing resin 50 does not enter the sensor substrate surface 10a, and the sealing resin surface 50a is lower than the sensor substrate surface 10a. 8 to 10, a large number of sensor substrates 10, base substrates 20, and bonding wires 40 are collectively sealed on a single package substrate 30, and a pressure receiving portion 12 is included outside the sealing resin 50. Only the sensor substrate surface 10a is exposed.

そして、図10に示すように、1つのセンサ構造部(対をなすセンサ基板10とベース基板20)からなるパッケージ単位でパッケージ基板30を切断する。これにより、図1に示すフォースセンサパッケージ1が多数同時に得られる。   Then, as shown in FIG. 10, the package substrate 30 is cut in a package unit composed of one sensor structure (a pair of sensor substrate 10 and base substrate 20). Thereby, a large number of force sensor packages 1 shown in FIG. 1 can be obtained simultaneously.

以上の本実施形態によれば、パッケージ表面に受圧部12を露出させ、受圧部12を除くセンサ基板10、ベース基板20及びボンディングワイヤー40を保護して外方に露出させないパッケージ構造を封止樹脂50により実現しているので、プラスチック製のパッケージケースを用いる従来に比べて、簡単な構成及び製造工程で済み、低コスト化及び生産性の向上を図れる。また本実施形態によれば、封止樹脂表面50aをセンサ基板表面10aより低く設定したので、封止樹脂50によって変位部11の変位を妨げることがなく、また、封止樹脂50の硬化時に生じる圧縮応力によってセンサ基板10を歪ませ、該歪みによりセンサ特性が変動してしまうという事態を回避できる。なお、実施形態における各部の寸法例は、現状での一例を示すものであり、この寸法に限定されないことは勿論である。   According to the above-described embodiment, the package structure in which the pressure receiving portion 12 is exposed on the package surface and the sensor substrate 10, the base substrate 20, and the bonding wire 40 excluding the pressure receiving portion 12 is protected and not exposed to the outside is used as the sealing resin. 50, it is possible to use a simple configuration and manufacturing process as compared with the conventional case using a plastic package case, thereby reducing costs and improving productivity. According to the present embodiment, since the sealing resin surface 50a is set lower than the sensor substrate surface 10a, the sealing resin 50 does not hinder the displacement of the displacement portion 11 and occurs when the sealing resin 50 is cured. It is possible to avoid a situation in which the sensor substrate 10 is distorted by the compressive stress and the sensor characteristics change due to the distortion. In addition, the example of the dimension of each part in embodiment shows an example in the present condition, and of course is not limited to this dimension.

1 センサパッケージ
10 センサ基板
10a センサ基板表面
10b センサ基板裏面
11 変位部
12 受圧部
13 ピエゾ抵抗素子
14 支持部
15 電気接続部
16 回路配線部
20 ベース基板
20a ベース基板表面
24 支持部
25 電気接続部
26 電極パッド
30 パッケージ基板
31 SMD端子
32 固定用端子
36 中継電極パッド
40 ボンディングワイヤー
50 封止樹脂
61 上金型
62 下金型
70 離型フィルム
DESCRIPTION OF SYMBOLS 1 Sensor package 10 Sensor board 10a Sensor board surface 10b Sensor board back surface 11 Displacement part 12 Pressure receiving part 13 Piezoresistive element 14 Support part 15 Electrical connection part 16 Circuit wiring part 20 Base board 20a Base board surface 24 Support part 25 Electrical connection part 26 Electrode pad 30 Package substrate 31 SMD terminal 32 Fixing terminal 36 Relay electrode pad 40 Bonding wire 50 Sealing resin 61 Upper mold 62 Lower mold 70 Release film

Claims (9)

基板表面に突設した受圧部を介して荷重を受けたときに変位し、該変位量を電気的に検出する複数のピエゾ抵抗素子が形成されたセンサ基板と、前記複数のピエゾ抵抗素子と電気的に接続する電気配線部が形成されたベース基板とを接合したセンサ構造部を有し、このセンサ構造部を、前記ベース基板を介してパッケージ基板に接着固定してなるフォースセンサパッケージにおいて、
前記パッケージ基板上のセンサ基板及びベース基板を封止樹脂で覆い、かつ、該封止樹脂表面をセンサ基板表面より低く設けたことを特徴とするフォースセンサパッケージ。
A sensor substrate formed with a plurality of piezoresistive elements that are displaced when receiving a load via a pressure receiving portion projecting from the substrate surface and electrically detect the amount of displacement, and the plurality of piezoresistive elements and the electric In a force sensor package having a sensor structure unit bonded to a base substrate on which an electrical wiring unit to be connected is formed, and this sensor structure unit is bonded and fixed to a package substrate via the base substrate,
A force sensor package, wherein a sensor substrate and a base substrate on the package substrate are covered with a sealing resin, and the surface of the sealing resin is provided lower than the surface of the sensor substrate.
請求項1記載のフォースセンサパッケージにおいて、前記ベース基板の電気配線部と前記パッケージ基板をボンディングワイヤーで電気的に接続し、このボンディングワイヤーを前記センサ基板表面より低く設けたフォースセンサパッケージ。 2. The force sensor package according to claim 1, wherein the electric wiring portion of the base substrate and the package substrate are electrically connected by a bonding wire, and the bonding wire is provided lower than the surface of the sensor substrate. 請求項1または2記載のフォースセンサパッケージにおいて、前記パッケージ基板には、前記センサ構造部を接着固定した面とは反対側の面に、該センサ構造部の接着固定位置と平面的に重複させて、固定用端子が備えられているフォースセンサパッケージ。 3. The force sensor package according to claim 1, wherein the package substrate has a surface opposite to a surface on which the sensor structure portion is bonded and fixed, overlapping with a bonding fixing position of the sensor structure portion in a plane. Force sensor package with fixed terminals. 請求項3記載のフォースセンサパッケージにおいて、前記パッケージ基板には、前記固定用端子を備えた面に、該パッケージ基板と外部回路を電気的に接続するためのSMD端子が複数備えられ、この複数のSMD端子のいずれかと前記固定用端子を兼用させたフォースセンサパッケージ。 4. The force sensor package according to claim 3, wherein the package substrate is provided with a plurality of SMD terminals for electrically connecting the package substrate and an external circuit on the surface provided with the fixing terminals. A force sensor package that combines one of the SMD terminals with the fixing terminal. 基板表面に突設した受圧部を介して荷重を受けたときに変位し、該変位量を電気的に検出する複数のピエゾ抵抗素子が形成されたセンサ基板と、前記複数のピエゾ抵抗素子と電気的に接続する電気配線部が形成されたベース基板とを接合してなるセンサ構造部を多数形成する工程と、
前記多数のセンサ構造部を該センサ構造部のベース基板を介してパッケージ基板上に接着固定し、各センサ構造部において前記ベース基板の電気配線部と前記パッケージ基板を電気的に接続する工程と、
前記パッケージ基板上の多数のセンサ基板及びベース基板を封止樹脂で覆い、かつ、該封止樹脂表面をセンサ基板表面よりも低く設ける工程と、
前記パッケージ基板を、1つのセンサ構造部からなるパッケージ単位で切断する工程と、
を有することを特徴とするフォースセンサパッケージの製造方法。
A sensor substrate formed with a plurality of piezoresistive elements that are displaced when receiving a load via a pressure receiving portion projecting from the substrate surface and electrically detect the amount of displacement, and the plurality of piezoresistive elements and the electric Forming a large number of sensor structures formed by joining a base substrate on which electrical wiring portions to be connected are formed,
Bonding and fixing the plurality of sensor structures on a package substrate via a base substrate of the sensor structure, and electrically connecting the electrical wiring portion of the base substrate and the package substrate in each sensor structure;
Covering a large number of sensor substrates and base substrates on the package substrate with a sealing resin, and providing the sealing resin surface lower than the sensor substrate surface;
A step of cutting the package substrate in units of a package consisting of one sensor structure;
A method for manufacturing a force sensor package, comprising:
請求項5記載のフォースセンサパッケージの製造方法において、前記封止工程は、
モールド金型の下金型に、前記多数のセンサ構造部を接着固定したパッケージ基板を設置するステップと、
モールド金型の上金型の前記パッケージ基板と対向する側の面に、前記受圧部の突出高さより大きな厚さを有する離型フィルムを装着するステップと、
前記上金型を下金型に接近させ、前記離型フィルムを前記多数のセンサ構造部の受圧部及びセンサ基板表面に当接させるステップと、
この当接状態で、前記離型フィルムと前記パッケージ基板との間に生じるキャビティに封止樹脂を充填するステップと、
この封止樹脂の硬化後に、前記離型フィルム及び上下金型を外すステップと、
を有するフォースセンサパッケージの製造方法。
6. The method of manufacturing a force sensor package according to claim 5, wherein the sealing step includes
Installing a package substrate on which a plurality of sensor structures are bonded and fixed to a lower mold of a mold; and
Mounting a release film having a thickness larger than the protruding height of the pressure receiving portion on the surface of the upper mold of the mold that faces the package substrate;
Bringing the upper mold closer to the lower mold and bringing the release film into contact with the pressure receiving portions and sensor substrate surfaces of the multiple sensor structures; and
In this contact state, a step of filling a sealing resin into a cavity generated between the release film and the package substrate;
After curing of the sealing resin, removing the release film and the upper and lower molds;
A method for manufacturing a force sensor package.
請求項5または6記載のフォースセンサパッケージの製造方法において、前記ベース基板の電気配線部と前記パッケージ基板をボンディングワイヤーで電気的に接続し、このボンディングワイヤーをセンサ基板表面よりも低く設けるフォースセンサパッケージの製造方法。 The force sensor package manufacturing method according to claim 5 or 6, wherein the electric wiring portion of the base substrate and the package substrate are electrically connected by a bonding wire, and the bonding wire is provided lower than the surface of the sensor substrate. Manufacturing method. 請求項5ないし7のいずれか一項に記載のフォースセンサパッケージの製造方法において、前記パッケージ基板のセンサ構造部を接着固定した面とは反対側の面に、該センサ構造部の接着固定位置と平面的に重複させて、固定用端子を形成するフォースセンサパッケージの製造方法。 The force sensor package manufacturing method according to any one of claims 5 to 7, wherein an adhesion fixing position of the sensor structure portion is provided on a surface of the package substrate opposite to a surface to which the sensor structure portion is adhesively fixed. A method of manufacturing a force sensor package in which fixing terminals are formed by overlapping in a planar manner. 請求項8記載のフォースセンサパッケージの製造方法において、前記パッケージ基板のセンサ構造部を接着固定した面とは反対側の面に、該パッケージ基板と外部回路を電気的に接続するためのSMD端子を複数形成し、この複数のSMD端子のいずれかを前記固定用端子と兼用に設けるフォースセンサパッケージの製造方法。 9. The method of manufacturing a force sensor package according to claim 8, wherein an SMD terminal for electrically connecting the package substrate and an external circuit is provided on a surface of the package substrate opposite to a surface to which the sensor structure portion is bonded and fixed. A method of manufacturing a force sensor package, in which a plurality of SMD terminals are formed and also used as the fixing terminals.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015161531A (en) * 2014-02-26 2015-09-07 アルプス電気株式会社 Load detector, and electronic apparatus using load detector
CN107195597A (en) * 2017-03-27 2017-09-22 敦捷光电股份有限公司 Optical fingerprint semi-conductor sensing packaging structure and its manufacture method
DE112020006261T5 (en) 2019-12-20 2022-09-29 Alps Alpine Co., Ltd. force sensor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012202762A (en) * 2011-03-24 2012-10-22 Denso Corp Dynamic quantity sensor
WO2015199228A1 (en) * 2014-06-27 2015-12-30 北陸電気工業株式会社 Force detector
JP2024012731A (en) * 2020-12-21 2024-01-31 アルプスアルパイン株式会社 strain sensor
DE102022119313A1 (en) 2022-08-02 2024-02-08 Tridonic Gmbh & Co Kg SMD components

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684918B2 (en) * 1986-05-14 1994-10-26 日本電装株式会社 Pressure sensor
JPS63196080A (en) * 1987-02-09 1988-08-15 Nec Corp Semiconductor force sensor and tactile sensor using same
JP2583615B2 (en) * 1989-09-28 1997-02-19 株式会社富士電機総合研究所 Touch sensor
JPH09264800A (en) * 1996-03-27 1997-10-07 Omron Corp Semiconductor type dynamic amount sensor
EP1720794A2 (en) * 2004-03-01 2006-11-15 Tessera, Inc. Packaged acoustic and electromagnetic transducer chips
US7109055B2 (en) * 2005-01-20 2006-09-19 Freescale Semiconductor, Inc. Methods and apparatus having wafer level chip scale package for sensing elements
JP2008014875A (en) * 2006-07-07 2008-01-24 Yamaha Corp Semiconductor device and manufacturing method therefor
JP5406487B2 (en) * 2008-09-17 2014-02-05 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015161531A (en) * 2014-02-26 2015-09-07 アルプス電気株式会社 Load detector, and electronic apparatus using load detector
CN107195597A (en) * 2017-03-27 2017-09-22 敦捷光电股份有限公司 Optical fingerprint semi-conductor sensing packaging structure and its manufacture method
DE112020006261T5 (en) 2019-12-20 2022-09-29 Alps Alpine Co., Ltd. force sensor

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