JP2009063550A5 - - Google Patents

Claims (30)

A support frame, a structure disposed inside the support frame, and a support unit that swingably supports the structure on the support frame, and detects a physical quantity in accordance with a displacement amount of the structure. A sensor element;
On the upper surface, a substrate to which the sensor element is fixed via a fixing member;
And at least a resin sealing layer for sealing the sensor element,
The sensor element is fixed by the fixing member so as to be spaced apart from the upper surface of the substrate by a predetermined distance,
The semiconductor sensor device, wherein the fixing member is formed in a frame shape along the support frame in a plan view in a region between the support frame and the substrate of the sensor element. . 2. The semiconductor sensor according to claim 1 , wherein the fixing member is formed so that at least an inner periphery thereof is larger than an inner periphery of the support frame of the sensor element in a plan view. apparatus.   The semiconductor sensor device according to claim 1, wherein the fixing member is formed of a die bond film having a predetermined thickness.   The semiconductor sensor device according to claim 1, wherein the fixing member is made of a die bond paste. A semiconductor element that includes a protruding electrode and is electrically connected to the sensor element via the protruding electrode;
5. The semiconductor device according to claim 1, wherein the semiconductor element is disposed on an upper surface of the sensor element so as to cover at least the structure of the sensor element and the support portion. The semiconductor sensor device described in 1. The semiconductor element further includes a plurality of metal bumps,
The semiconductor sensor device according to claim 5, wherein the plurality of metal bumps are formed in a region between the support frame of the sensor element and the semiconductor element.   The semiconductor sensor device according to claim 6, wherein the plurality of metal bumps are formed in a frame shape along an outer peripheral portion of the semiconductor element when seen in a plan view.   The semiconductor sensor device according to claim 5, wherein each of the plurality of metal bumps is made of the same material as the protruding electrode.   9. The semiconductor according to claim 1, wherein the sensor element is configured in a QFN type or a BGA type package by being sealed with the resin sealing layer. 10. Sensor device.   The semiconductor sensor device according to claim 5, wherein the semiconductor element is a control circuit.   The semiconductor sensor device according to claim 1, wherein the substrate is a lead frame.   The lead frame includes the sensor element, a semiconductor element mounted on an upper surface of the sensor element, and a resin sealing layer for sealing the sensor element and the semiconductor element. Item 12. The semiconductor sensor device according to Item 11.   The semiconductor sensor device according to claim 11, wherein the lead frame is a metal plate containing copper.   The semiconductor sensor device according to claim 11, wherein the lead frame includes a die pad and a plurality of lead terminals separated from the die pad.   The semiconductor sensor device according to claim 14, wherein the lead terminal is electrically connected to the sensor element via a bonding wire.   The semiconductor sensor device according to claim 1, wherein the resin sealing layer is a thermosetting resin.   The semiconductor sensor device according to claim 1, wherein the sensor element is a piezoresistive acceleration sensor element capable of detecting acceleration in three axial directions.   The structure of the sensor element is integrally connected to a rectangular parallelepiped core portion supported by the support frame via the four support portions, and to each of the four corners of the core portion in plan view. 18. The semiconductor sensor device according to claim 1, wherein the semiconductor sensor device includes four rectangular parallelepiped associated parts.   The semiconductor sensor device according to claim 18, wherein a gap portion is provided between each of the accompanying portions and the support frame and the support portion.   The semiconductor sensor device according to claim 19, wherein the gap portion has a size such that the accompanying portion does not contact the support frame or the support portion.   21. The semiconductor sensor device according to claim 1, wherein a piezoresistive element is formed on a surface of the support portion.   The semiconductor sensor device according to claim 14, wherein a gap portion having a height of 50 μm to 100 μm is formed between the die pad and the sensor element.   The semiconductor sensor device according to claim 1, wherein the fixing member is a die-bonding film having a thickness of 50 μm made of an epoxy resin.   The semiconductor sensor device according to claim 5, wherein the semiconductor element is flip-chip mounted on an upper surface of the sensor element.   The semiconductor sensor device according to claim 5, wherein the protruding electrodes are formed at four corners on the upper surface of the sensor element.   The semiconductor sensor device according to claim 5, wherein the protruding electrode is made of an Au bump.   The semiconductor element has a plane area larger than an opening of the sensor element, and is fixed on an upper surface of the sensor element so as to cover the opening of the support frame. The semiconductor sensor device according to any one of 5 to 8, 10, and 24 to 26.   The gap part which has the height of 20 micrometers-100 micrometers is formed between the upper surface of the said sensor element, and the said semiconductor element, The any one of Claims 5-8, 10, 24-27 characterized by the above-mentioned. 2. The semiconductor sensor device according to item 1.   The semiconductor sensor device according to any one of claims 5 to 8, 10, and 24 to 28, wherein a resin member is formed on an outer peripheral portion of the semiconductor element over the entire periphery.   30. The semiconductor sensor device according to claim 29, wherein the resin member includes any one of an epoxy resin, a polyimide resin, a polyurethane resin, a conductive die bond film, and a die bond paste.