JP2009043942A - 2端子抵抗スイッチ素子及び半導体デバイス - Google Patents
2端子抵抗スイッチ素子及び半導体デバイス Download PDFInfo
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- JP2009043942A JP2009043942A JP2007207397A JP2007207397A JP2009043942A JP 2009043942 A JP2009043942 A JP 2009043942A JP 2007207397 A JP2007207397 A JP 2007207397A JP 2007207397 A JP2007207397 A JP 2007207397A JP 2009043942 A JP2009043942 A JP 2009043942A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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Abstract
【課題を解決するための手段】多層カーボンナノファイバーあるいは多層カーボンナノチューブをナノスケールの間隙幅をもって配置したことを特徴とする2端子抵抗スイッチ素子である。
【選択図】図1
Description
メモリ素子に関して例示すると、原子移動や分子の特性変化を介し、On/Off状態間で大きな抵抗変化を生じる2端子抵抗スイッチ素子が研究されている。以下に代表的な例を紹介する。
非特許文献2で紹介されている手法は、カテナン系分子の酸化還元反応を利用し、電圧でこの分子の酸化還元反応を誘起させチャンネルを開き、スイッチ素子を実現している。
以上のように近年、少数の金属原子の伸縮若しくは分子の酸化還元反応を利用したスイッチ素子が報告されている。
(1)多層カーボンナノファイバーをナノスケールの間隙幅をもって配置したことを特徴とする2端子抵抗スイッチ素子。
(2)上記間隙幅をもって配置した多層カーボンナノファイバーに電極を設けたことを特徴とする(1)に記載の2端子抵抗スイッチ素子。
(3)多層カーボンナノチューブをナノスケールの間隙幅をもって配置したことを特徴とする2端子抵抗スイッチ素子。
(4)上記間隙幅をもって配置した多層カーボンナノチューブに電極を設けたことを特徴とする(3)に記載の2端子抵抗スイッチ素子。
(5)上記間隙幅は、0.1nm〜20nmの範囲であることを特徴とする(1)ないし(4)のいずれかに記載の2端子抵抗スイッチ素子。
(6)(1)乃至(5)のいずれかに記載の2端子抵抗スイッチ素子を組み込んだ半導体デバイス。
低いオン抵抗(約500kΩ)は、+12VからゆっくりとOVに電圧を落とすこと(例えば電圧の変化速度は約1V/s)で実現する。そして高いオフ抵抗(約10MΩ)は、+12Vから瞬時に0Vに電圧を下げた時(電圧の変化速度は約0.2V/1μs)に実現する。
なおカーボンナノチューブ間の間隙幅は、0.1nm〜20nmの範囲であればよい。
多層カーボンナノチューブ架設後の電極の走査型電子顕微鏡像を図3に示す
例えば実施例では多層カーボンナノチューブを例示しているが、2層以上の構造を持つカーボンナノファイバーなどを用いても、抵抗スイッチ素子とすることができる。
また本発明の2端子抵抗スイッチ素子をメモリやストレージ装置等に組み込んで半導体デバイスが得られることはいうまでもない。
Claims (6)
- 多層カーボンナノファイバーをナノスケールの間隙幅をもって配置したことを特徴とする2端子抵抗スイッチ素子。
- 上記間隙幅をもって配置した多層カーボンナノファイバーに電極を設けたことを特徴とする請求項1に記載の2端子抵抗スイッチ素子。
- 多層カーボンナノチューブをナノスケールの間隙幅をもって配置したことを特徴とする2端子抵抗スイッチ素子。
- 上記間隙幅をもって配置した多層カーボンナノチューブに電極を設けたことを特徴とする請求項3に記載の2端子抵抗スイッチ素子。
- 上記間隙幅は、0.1nm〜20nmの範囲であることを特徴とする請求項1ないし4のいずれか1項に記載の2端子抵抗スイッチ素子。
- 請求項1乃至5のいずれか1項に記載の2端子抵抗スイッチ素子を組み込んだ半導体デバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207397A JP5190924B2 (ja) | 2007-08-09 | 2007-08-09 | 2端子抵抗スイッチ素子及び半導体デバイス |
PCT/JP2008/063176 WO2009019980A1 (ja) | 2007-08-09 | 2008-07-23 | 2端子抵抗スイッチ素子及び半導体デバイス |
US12/671,145 US8604458B2 (en) | 2007-08-09 | 2008-07-23 | Two-terminal resistance switching device and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207397A JP5190924B2 (ja) | 2007-08-09 | 2007-08-09 | 2端子抵抗スイッチ素子及び半導体デバイス |
Publications (2)
Publication Number | Publication Date |
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JP2009043942A true JP2009043942A (ja) | 2009-02-26 |
JP5190924B2 JP5190924B2 (ja) | 2013-04-24 |
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JP2007207397A Expired - Fee Related JP5190924B2 (ja) | 2007-08-09 | 2007-08-09 | 2端子抵抗スイッチ素子及び半導体デバイス |
Country Status (3)
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US (1) | US8604458B2 (ja) |
JP (1) | JP5190924B2 (ja) |
WO (1) | WO2009019980A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204542A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8716691B2 (en) | 2010-07-14 | 2014-05-06 | Kabushiki Kaisha Toshiba | Nonvolatile memory device and method for manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11194134A (ja) * | 1997-10-30 | 1999-07-21 | Canon Inc | カーボンナノチューブデバイス、その製造方法及び電子放出素子 |
JP2007049084A (ja) * | 2005-08-12 | 2007-02-22 | Toshiba Corp | スイッチ素子、メモリ素子および磁気抵抗効果素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3864229B2 (ja) | 2003-08-29 | 2006-12-27 | 独立行政法人産業技術総合研究所 | ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を有する素子 |
JP3864232B2 (ja) | 2003-12-10 | 2006-12-27 | 独立行政法人産業技術総合研究所 | ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を用いた素子 |
JP2006128438A (ja) | 2004-10-29 | 2006-05-18 | National Institute Of Advanced Industrial & Technology | ナノギャップ電極の形成方法及びこれによって得られたナノギャップ電極並びに該電極を備えた素子 |
JP4919146B2 (ja) | 2005-09-27 | 2012-04-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
-
2007
- 2007-08-09 JP JP2007207397A patent/JP5190924B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-23 US US12/671,145 patent/US8604458B2/en not_active Expired - Fee Related
- 2008-07-23 WO PCT/JP2008/063176 patent/WO2009019980A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11194134A (ja) * | 1997-10-30 | 1999-07-21 | Canon Inc | カーボンナノチューブデバイス、その製造方法及び電子放出素子 |
JP2007049084A (ja) * | 2005-08-12 | 2007-02-22 | Toshiba Corp | スイッチ素子、メモリ素子および磁気抵抗効果素子 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8716691B2 (en) | 2010-07-14 | 2014-05-06 | Kabushiki Kaisha Toshiba | Nonvolatile memory device and method for manufacturing the same |
JP2012204542A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
US9053783B2 (en) | 2011-03-24 | 2015-06-09 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
Also Published As
Publication number | Publication date |
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JP5190924B2 (ja) | 2013-04-24 |
WO2009019980A1 (ja) | 2009-02-12 |
US20100193757A1 (en) | 2010-08-05 |
US8604458B2 (en) | 2013-12-10 |
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