JP2009033043A5 - - Google Patents

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Publication number
JP2009033043A5
JP2009033043A5 JP2007197810A JP2007197810A JP2009033043A5 JP 2009033043 A5 JP2009033043 A5 JP 2009033043A5 JP 2007197810 A JP2007197810 A JP 2007197810A JP 2007197810 A JP2007197810 A JP 2007197810A JP 2009033043 A5 JP2009033043 A5 JP 2009033043A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007197810A
Other versions
JP2009033043A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007197810A priority Critical patent/JP2009033043A/ja
Priority claimed from JP2007197810A external-priority patent/JP2009033043A/ja
Priority to US12/173,429 priority patent/US7888765B2/en
Publication of JP2009033043A publication Critical patent/JP2009033043A/ja
Publication of JP2009033043A5 publication Critical patent/JP2009033043A5/ja
Pending legal-status Critical Current

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JP2007197810A 2007-07-30 2007-07-30 光半導体装置 Pending JP2009033043A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007197810A JP2009033043A (ja) 2007-07-30 2007-07-30 光半導体装置
US12/173,429 US7888765B2 (en) 2007-07-30 2008-07-15 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007197810A JP2009033043A (ja) 2007-07-30 2007-07-30 光半導体装置

Publications (2)

Publication Number Publication Date
JP2009033043A JP2009033043A (ja) 2009-02-12
JP2009033043A5 true JP2009033043A5 (ja) 2010-04-08

Family

ID=40337324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007197810A Pending JP2009033043A (ja) 2007-07-30 2007-07-30 光半導体装置

Country Status (2)

Country Link
US (1) US7888765B2 (ja)
JP (1) JP2009033043A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080045A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
JP5401203B2 (ja) * 2009-08-07 2014-01-29 株式会社日立製作所 半導体受光装置及びその製造方法
IT1399690B1 (it) * 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione
JP2014126718A (ja) * 2012-12-26 2014-07-07 V Technology Co Ltd 半導体光集積回路
JP6281297B2 (ja) * 2014-01-27 2018-02-21 株式会社リコー フォトトランジスタ、及び半導体装置
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455189A (en) * 1977-10-11 1979-05-02 Nippon Telegr & Teleph Corp <Ntt> Photo transistor
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
JPS5681982A (en) * 1979-12-08 1981-07-04 Toshiba Corp Power phototransistor
US4633287A (en) * 1982-08-09 1986-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
JPS59193322A (ja) * 1983-04-18 1984-11-01 Canon Inc 光電変換素子
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JP2662062B2 (ja) * 1989-12-15 1997-10-08 キヤノン株式会社 光電変換装置
JPH05121427A (ja) * 1991-10-24 1993-05-18 Hamamatsu Photonics Kk 半導体増幅素子
JPH05235394A (ja) 1992-02-26 1993-09-10 Sharp Corp フォトトランジスタ
US5596186A (en) * 1993-12-08 1997-01-21 Nikon Corporation High sensitivity silicon avalanche photodiode
JP2641416B2 (ja) * 1995-10-09 1997-08-13 キヤノン株式会社 光電変換装置
JP2770810B2 (ja) * 1995-12-28 1998-07-02 日本電気株式会社 受光素子
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
JP2001077400A (ja) * 1999-08-31 2001-03-23 Tokai Rika Co Ltd 半導体フォトデバイス
JP3976185B2 (ja) * 2001-10-31 2007-09-12 シャープ株式会社 受光素子、回路内蔵受光素子および光ピックアップ
JP2003158251A (ja) * 2001-11-20 2003-05-30 Sharp Corp 受光素子、回路内蔵受光素子、回路内蔵受光素子の製造方法および光学装置
JP2003197949A (ja) * 2001-12-26 2003-07-11 Sharp Corp 受光素子および回路内蔵型受光装置および光ディスク装置
JP2005277063A (ja) * 2004-03-24 2005-10-06 Matsushita Electric Ind Co Ltd 受光素子
DE102005025937B4 (de) * 2005-02-18 2009-11-26 Austriamicrosystems Ag Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren

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