JP2008544531A - 瞳ファセットミラー上に減衰素子を備えた二重ファセット照明光学系 - Google Patents

瞳ファセットミラー上に減衰素子を備えた二重ファセット照明光学系 Download PDF

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JP2008544531A
JP2008544531A JP2008517389A JP2008517389A JP2008544531A JP 2008544531 A JP2008544531 A JP 2008544531A JP 2008517389 A JP2008517389 A JP 2008517389A JP 2008517389 A JP2008517389 A JP 2008517389A JP 2008544531 A JP2008544531 A JP 2008544531A
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optical system
field
pupil
illumination optical
facet
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JP2008517389A
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Japanese (ja)
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JP2008544531A5 (OSRAM
Inventor
ヴォルフガング ジンガー
ヨアヒム ハインツ
エーリッヒ シュベルト
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カール ツァイス エスエムテー アーゲー
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Publication of JP2008544531A publication Critical patent/JP2008544531A/ja
Publication of JP2008544531A5 publication Critical patent/JP2008544531A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
JP2008517389A 2005-06-21 2006-06-19 瞳ファセットミラー上に減衰素子を備えた二重ファセット照明光学系 Pending JP2008544531A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69270005P 2005-06-21 2005-06-21
PCT/EP2006/005857 WO2006136353A1 (en) 2005-06-21 2006-06-19 A double-facetted illumination system with attenuator elements on the pupil facet mirror

Publications (2)

Publication Number Publication Date
JP2008544531A true JP2008544531A (ja) 2008-12-04
JP2008544531A5 JP2008544531A5 (OSRAM) 2009-08-06

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JP2008517389A Pending JP2008544531A (ja) 2005-06-21 2006-06-19 瞳ファセットミラー上に減衰素子を備えた二重ファセット照明光学系

Country Status (4)

Country Link
US (1) US20080165925A1 (OSRAM)
EP (1) EP1894063A1 (OSRAM)
JP (1) JP2008544531A (OSRAM)
WO (1) WO2006136353A1 (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294442A (ja) * 2007-05-23 2008-12-04 Asml Holding Nv フィールドに依存する楕円度および均一性の補正のための光減衰フィルタ
JP2009267390A (ja) * 2008-04-29 2009-11-12 Nikon Corp オプティカルインテグレータ、照明光学系、露光装置、およびデバイス製造方法
JP2010519726A (ja) * 2007-02-20 2010-06-03 カール・ツァイス・エスエムティー・アーゲー 複数の１次光源を有する光学要素
JP2015519009A (ja) * 2012-05-23 2015-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー ファセットミラー
JP2015524576A (ja) * 2012-07-17 2015-08-24 カール・ツァイス・エスエムティー・ゲーエムベーハー 照明光学ユニット

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DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
US7990520B2 (en) 2006-12-18 2011-08-02 Carl Zeiss Smt Gmbh Microlithography illumination systems, components and methods
US8908151B2 (en) * 2008-02-14 2014-12-09 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system
DE102008001511A1 (de) 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
DE102008049586A1 (de) 2008-09-30 2010-04-08 Carl Zeiss Smt Ag Feldfacettenspiegel zum Einsatz in einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die EUV-Mikrolithographie
WO2010108516A1 (en) 2009-03-27 2010-09-30 Carl Zeiss Smt Ag Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind
DE102009045491A1 (de) * 2009-10-08 2010-11-25 Carl Zeiss Smt Ag Beleuchtungsoptik
KR101703830B1 (ko) * 2009-11-18 2017-02-08 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
WO2011076500A1 (en) * 2009-12-23 2011-06-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102011077234A1 (de) 2011-06-08 2012-12-13 Carl Zeiss Smt Gmbh EUV-Spiegelanordnung, optisches System mit EUV-Spiegelanordnung und Verfahren zum Betreiben eines optischen Systems mit EUV-Spiegelanordnung
DE102011005940A1 (de) 2011-03-23 2012-09-27 Carl Zeiss Smt Gmbh EUV-Spiegelanordnung, optisches System mit EUV-Spiegelanordnung und Verfahren zum Betreiben eines optischen Systems mit EUV-Spiegelanordnung
EP2689427B1 (en) 2011-03-23 2017-05-03 Carl Zeiss SMT GmbH Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement
DE102011076658A1 (de) * 2011-05-30 2012-05-10 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
DE102012212664A1 (de) 2012-07-19 2014-01-23 Carl Zeiss Smt Gmbh Verfahren zum Einstellen eines Beleuchtungssettings
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US10293436B2 (en) 2013-12-17 2019-05-21 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
EP3166895B1 (en) 2014-07-08 2021-11-24 Corning Incorporated Methods and apparatuses for laser processing materials
TWI659793B (zh) * 2014-07-14 2019-05-21 美商康寧公司 用於使用可調整雷射束焦線來處理透明材料的系統及方法
EP3274306B1 (en) 2015-03-24 2021-04-14 Corning Incorporated Laser cutting and processing of display glass compositions
DE102015217603A1 (de) * 2015-09-15 2017-03-16 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
JP6923284B2 (ja) 2016-09-30 2021-08-18 コーニング インコーポレイテッド 非軸対称ビームスポットを用いて透明被加工物をレーザ加工するための装置及び方法
CN110167891A (zh) 2016-10-24 2019-08-23 康宁股份有限公司 用于对片状玻璃基材进行基于激光的机械加工的基材处理工位
DE102017203246A1 (de) 2017-02-28 2018-08-30 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Spiegels für den Wellenlängenbereich von 5 nm bis 20 nm

Citations (6)

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JP2002203784A (ja) * 2000-10-27 2002-07-19 Carl Zeiss Stiftung Trading As Carl Zeiss 照明の設定が変更可能な照明系
JP2003506881A (ja) * 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
JP2003178969A (ja) * 2001-09-07 2003-06-27 Asml Netherlands Bv リソグラフィ装置およびデバイスの製造方法
JP2003309057A (ja) * 2002-04-15 2003-10-31 Canon Inc 投影露光装置及びデバイス製造方法
JP2004128449A (ja) * 2002-03-18 2004-04-22 Asml Netherlands Bv リソグラフィ装置およびデバイス製造法
WO2005015314A2 (en) * 2003-07-30 2005-02-17 Carl Zeiss Smt Ag An illumination system for microlithography

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JP3158691B2 (ja) * 1992-08-07 2001-04-23 株式会社ニコン 露光装置及び方法、並びに照明光学装置
AU1891299A (en) * 1998-01-19 1999-08-02 Nikon Corporation Illuminating device and exposure apparatus
JP4238390B2 (ja) * 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
EP0955641B1 (de) * 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
US6225027B1 (en) * 1998-08-06 2001-05-01 Euv Llc Extreme-UV lithography system
US6195201B1 (en) * 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
US7209287B2 (en) * 2000-09-18 2007-04-24 Vincent Lauer Confocal optical scanning device
TW519574B (en) * 2000-10-20 2003-02-01 Nikon Corp Multilayer mirror and method for making the same, and EUV optical system comprising the same, and EUV microlithography system comprising the same
EP1870772B1 (en) * 2002-03-18 2013-10-23 ASML Netherlands B.V. Lithographic apparatus
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
EP1692566A4 (en) * 2003-10-09 2009-02-25 Merlin Technology Ltd Liabilit PROJECTION RECEPTION SURFACE, WHICH WORKS IN AMBIENT LIGHT

Patent Citations (6)

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JP2003506881A (ja) * 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
JP2002203784A (ja) * 2000-10-27 2002-07-19 Carl Zeiss Stiftung Trading As Carl Zeiss 照明の設定が変更可能な照明系
JP2003178969A (ja) * 2001-09-07 2003-06-27 Asml Netherlands Bv リソグラフィ装置およびデバイスの製造方法
JP2004128449A (ja) * 2002-03-18 2004-04-22 Asml Netherlands Bv リソグラフィ装置およびデバイス製造法
JP2003309057A (ja) * 2002-04-15 2003-10-31 Canon Inc 投影露光装置及びデバイス製造方法
WO2005015314A2 (en) * 2003-07-30 2005-02-17 Carl Zeiss Smt Ag An illumination system for microlithography

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010519726A (ja) * 2007-02-20 2010-06-03 カール・ツァイス・エスエムティー・アーゲー 複数の１次光源を有する光学要素
JP2008294442A (ja) * 2007-05-23 2008-12-04 Asml Holding Nv フィールドに依存する楕円度および均一性の補正のための光減衰フィルタ
JP2009267390A (ja) * 2008-04-29 2009-11-12 Nikon Corp オプティカルインテグレータ、照明光学系、露光装置、およびデバイス製造方法
JP2015519009A (ja) * 2012-05-23 2015-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー ファセットミラー
JP2015524576A (ja) * 2012-07-17 2015-08-24 カール・ツァイス・エスエムティー・ゲーエムベーハー 照明光学ユニット
US9891530B2 (en) 2012-07-17 2018-02-13 Carl Zeiss Smt Gmbh Illumination optical unit

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EP1894063A1 (en) 2008-03-05
WO2006136353A1 (en) 2006-12-28
US20080165925A1 (en) 2008-07-10

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