JP2008537001A - CTのための非常に短い残光を有するGd2O2S:Prを得る方法。 - Google Patents
CTのための非常に短い残光を有するGd2O2S:Prを得る方法。 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 9
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 75
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 65
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 50
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 9
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 8
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 7
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims description 62
- 239000000049 pigment Substances 0.000 claims description 44
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 43
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 16
- 230000006835 compression Effects 0.000 claims description 10
- 238000007906 compression Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 5
- 230000005865 ionizing radiation Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000002059 diagnostic imaging Methods 0.000 claims description 2
- 238000000137 annealing Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 150000000921 Gadolinium Chemical class 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000002591 computed tomography Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- CYNYIHKIEHGYOZ-UHFFFAOYSA-N 1-bromopropane Chemical compound CCCBr CYNYIHKIEHGYOZ-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229910016655 EuF 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical class [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- IZCUOLNYELHOEC-UHFFFAOYSA-N [Eu].[Ce] Chemical compound [Eu].[Ce] IZCUOLNYELHOEC-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SNMVRZFUUCLYTO-UHFFFAOYSA-N n-propyl chloride Chemical compound CCCCl SNMVRZFUUCLYTO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Chemical class 0.000 description 1
- 239000010703 silicon Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
a)前記ガドリニウム含有顔料粉体中のユウロピウムの量を検出するステップ、
b)ユウロピウムの含有量を上回るセリウムを加えるステップを有し、
ユウロピウムの含有量がGd2O2Sを主成分として1重量ppm以下であることが確認され、セリウムの含有量はGd2O2Sを主成分として0.1重量ppm以上100重量ppm以下、好ましくは50重量ppm以下であり、
ガドリニウム含有顔料粉体のユウロピウム及びセリウムの含有量が1:10〜1:150のユウロピウム:セリウム比に調整される。
ステップa)
MがPr、Tb、Yb、Dy、Sm及び/又はHoのグループから選択される少なくとも1つの元素を表すGd2O2S:Mの顔料粉体を選択する。選択される前記顔料粉体はさらにGd2O2Sを主成分として1重量ppm以下のユウロピウム、及びGd2O2Sを主成分として0.1重量ppm以上100重量ppm以下、好ましくは50重量ppm以下のセリウムを有する。ガドリニウム含有顔料粉体のユウロピウム及びセリウムの含有量は1:10〜1:150のユウロピウム:セリウム比に調整される。高温圧縮に用いられる前記粉体の粒径は1μmから20μmである。1000℃から1400℃の温度及び/又は100MPaから300MPaの圧力で前記高温圧縮を実行する。
ステップb)
700℃から1200℃の温度で0.5時間から30時間の時間、エアアニールする。
ステップc)
選択的にステップa)とステップb)との間に追加的に実行される。蛍光性セラミックを真空下で1000℃から1400℃の温度で0.5時間から30時間の時間、アニールする。 Gd2O2Sの顔料粉体は、0.1ppmから1000ppm(重量割合)の量のMを有することができる。
−電離放射線、好ましくはX線、γ線及び電子ビームを検出するためのシンチレータ若しくは蛍光性部材、
並びに/又は、
−好ましくはコンピュータ断層撮影(CT)の医療分野において使用される機器又は装置、
に用いられることができる。
Claims (10)
- 非常に短い残光を有するGd2O2S:M蛍光性セラミック材料であって、MがPr、Tb、Yb、Dy、Sm及び/又はHoのグループから選択される少なくとも1つの元素を表し、前記Gd2O2S:M蛍光性セラミック材料がさらに、Gd2O2Sを主成分として1重量ppm以下のユウロピウム、及びGd2O2Sを主成分として0.1重量ppm以上100重量ppm以下のセリウムを有し、1:10〜1:150のユウロピウム:セリウム比でセリウムの含有量がユウロピウムの含有量を上回ることを特徴とするGd2O2S:M蛍光性セラミック材料。
- 前記Gd2O2S:M蛍光性セラミック材料のユウロピウム及びセリウムの含有量が、1:20〜1:100、好ましくは1:25〜1:75、より好ましくは1:20〜1:50、最も好ましくは約1:25のユウロピウム:セリウム比に調整される請求項1に記載のGd2O2S:M蛍光性セラミック材料。
- 前記Gd2O2S:M蛍光性セラミック材料の残光が、0.5秒後に0ppmより大きく0.5秒後に80ppm以下、好ましくは0.5秒後に15ppm以上0.5秒後に25ppm以下である請求項1又は請求項2に記載のGd2O2S:M蛍光性セラミック材料。
- 約515nmである自身の発光波長における前記Gd2O2S:M蛍光性セラミック材料の透過率が、1.6mmの層厚に対して10%から70%である請求項1から請求項3のいずれか一項に記載のGd2O2S:M蛍光性セラミック材料。
- 請求項1から請求項4のいずれか一項に記載のGd2O2S:M蛍光性セラミック材料の製造に用いられるガドリニウム含有顔料粉体であって、Gd顔料粉体材料がさらに、Gd2O2Sを主成分として1重量ppm以下のユウロピウム、及びGd2O2Sを主成分として0.1重量ppm以上100重量ppm以下のセリウムを有し、セリウムの含有量がユウロピウムの含有量を上回り、並びに/又はGd顔料粉体のユウロピウム及びセリウムの含有量が1:10〜1:150のユウロピウム:セリウム比に調整され、前記ガドリニウム含有顔料粉体が好ましくはGd2O3、Gd2O2S及び/若しくはGd2O2S:Mから成るグループから選択される、ガドリニウム含有顔料粉体。
- 請求項1から請求項4のいずれか一項に記載のGd2O2S:M蛍光性セラミック材料の製造に用いられるガドリニウム含有顔料粉体の製造方法であって、
a)前記ガドリニウム含有顔料粉体中のユウロピウムの量を検出するステップ、
b)ユウロピウムの含有量を上回るセリウムを加えるステップを有し、
ユウロピウムの含有量がGd2O2Sを主成分として1重量ppm以下であることが確認され、セリウムの含有量はGd2O2Sを主成分として0.1重量ppm以上100重量ppm以下であり、
ガドリニウム含有顔料粉体のユウロピウム及びセリウムの含有量が1:10〜1:150のユウロピウム:セリウム比に調整される製造方法。 - ユウロピウムにより汚染されたガドリニウム含有顔料粉体の請求項6に記載の製造方法であって、前記ユウロピウムにより汚染されたガドリニウム含有顔料粉体がGd2O3、Gd2O2S及び/又はGd2O2S:Mから成るグループから選択される製造方法。
- 単軸高温圧縮を用いた請求項1から請求項4のいずれか一項に記載の蛍光性セラミック材料の製造方法であって、以下のステップを有する製造方法。
ステップa)
MがPr、Tb、Yb、Dy、Sm及び/又はHoのグループから選択される少なくとも1つの元素を表すGd2O2S:Mの顔料粉体を選択する。選択される前記顔料粉体はさらにGd2O2Sを主成分として1重量ppm以下のユウロピウム、及びGd2O2Sを主成分として0.1重量ppm以上100重量ppm以下のセリウムを有する。ガドリニウム含有顔料粉体のユウロピウム及びセリウムの含有量は1:10〜1:150のユウロピウム:セリウム比に調整される。高温圧縮に用いられる前記粉体の粒径は1μmから20μmである。1000℃から1400℃の温度及び/又は100MPaから300MPaの圧力で前記高温圧縮を実行する。
ステップb)
700℃から1200℃の温度で0.5時間から30時間の時間、エアアニールする。
ステップc)
選択的にステップa)とステップb)との間に追加的に実行される。蛍光性セラミックを真空下で1000℃から1400℃の温度で0.5時間から30時間の時間、アニールする。 - 電離放射線を検出する検出器であって、当該検出器は請求項1から請求項4のいずれか一項に記載の蛍光性セラミックを有し、好ましくはX線検出器、CT検出器又はElectronic Portal Imaging検出器である検出器。
- 医療撮像装置における請求項9に記載の検出器の使用であって、前記検出器が好ましくはX線検出器、CT検出器又はElectronic Portal Imaging検出器である使用。
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Application Number | Priority Date | Filing Date | Title |
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EP05103102 | 2005-04-19 | ||
PCT/IB2006/051157 WO2006111900A2 (en) | 2005-04-19 | 2006-04-13 | Procedure to obtain gd2o2s: pr for ct with a very short afterglow |
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US (1) | US8057702B2 (ja) |
EP (1) | EP1882024B1 (ja) |
JP (1) | JP2008537001A (ja) |
CN (1) | CN101163774B (ja) |
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US8642110B2 (en) | 2006-12-29 | 2014-02-04 | N.V. Nutricia | Process for producing slowly digestible starch |
WO2010078223A2 (en) * | 2008-12-30 | 2010-07-08 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic scintillator body and scintillation device |
ES2640478T3 (es) * | 2009-07-02 | 2017-11-03 | Sicpa Holding Sa | Sistema de autenticación |
US9322935B2 (en) | 2011-07-28 | 2016-04-26 | Koninklijke Philips N.V. | Terbium based detector scintillator |
EP2898043B1 (en) | 2013-03-26 | 2016-06-01 | Koninklijke Philips N.V. | Mixed oxide materials |
CN105969357B (zh) * | 2016-05-11 | 2018-11-30 | 广东宁源科技园发展有限公司 | 一种新型硫氧化物上转换荧光材料及其制备方法 |
CN109370583A (zh) * | 2018-10-18 | 2019-02-22 | 上海纳米技术及应用国家工程研究中心有限公司 | 硫氧化钆粉体的制备方法及其产品和应用 |
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US4507560A (en) * | 1980-06-13 | 1985-03-26 | Gte Products Corporation | Terbium-activated gadolinium oxysulfide X-ray phosphor |
JPH1129767A (ja) * | 1997-07-08 | 1999-02-02 | Hitachi Medical Corp | 蛍光体及びそれを用いた放射線検出器及びx線ct装置 |
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JPH04236292A (ja) | 1991-01-16 | 1992-08-25 | Toshiba Corp | 放射線検出器用シンチレータ製造方法 |
DE4224931C2 (de) * | 1992-07-28 | 1995-11-23 | Siemens Ag | Verfahren zur Herstellung einer Szintillatorkeramik und deren Verwendung |
DE4402258C2 (de) * | 1994-01-26 | 1996-06-20 | Siemens Ag | Leuchtstoff mit reduziertem Nachleuchten |
US5811924A (en) | 1995-09-19 | 1998-09-22 | Kabushiki Kaisha Toshiba | Fluorescent lamp |
US6093347A (en) | 1997-05-19 | 2000-07-25 | General Electric Company | Rare earth X-ray scintillator compositions |
EP1351094B1 (en) * | 2002-02-20 | 2006-11-29 | Fuji Photo Film Co., Ltd. | Radiation image reproducing device and method for reproducing radiation image |
RU2350579C2 (ru) * | 2004-05-17 | 2009-03-27 | Федеральное Государственное Унитарное Предприятие "Научно-Исследовательский И Технологический Институт Оптического Материаловедения" Всероссийского Научного Центра "Государственный Оптический Институт Им. С.И.Вавилова" | Флуоресцентная керамика |
WO2007080535A2 (en) * | 2006-01-16 | 2007-07-19 | Philips Intellectual Property & Standards Gmbh | Scintillation element, scintillation array and method for producing the same |
-
2006
- 2006-04-13 JP JP2008507229A patent/JP2008537001A/ja active Pending
- 2006-04-13 US US11/911,724 patent/US8057702B2/en not_active Expired - Fee Related
- 2006-04-13 EP EP06727925.7A patent/EP1882024B1/en active Active
- 2006-04-13 CN CN2006800130009A patent/CN101163774B/zh active Active
- 2006-04-13 WO PCT/IB2006/051157 patent/WO2006111900A2/en active Application Filing
- 2006-04-13 RU RU2007142376/05A patent/RU2410407C2/ru not_active IP Right Cessation
Patent Citations (3)
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US3974389A (en) * | 1974-11-20 | 1976-08-10 | Gte Sylvania Incorporated | Terbium-activated rare earth oxysulfide X-ray phosphors |
US4507560A (en) * | 1980-06-13 | 1985-03-26 | Gte Products Corporation | Terbium-activated gadolinium oxysulfide X-ray phosphor |
JPH1129767A (ja) * | 1997-07-08 | 1999-02-02 | Hitachi Medical Corp | 蛍光体及びそれを用いた放射線検出器及びx線ct装置 |
Also Published As
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EP1882024A2 (en) | 2008-01-30 |
RU2410407C2 (ru) | 2011-01-27 |
RU2007142376A (ru) | 2009-05-27 |
CN101163774B (zh) | 2011-09-07 |
EP1882024B1 (en) | 2015-11-18 |
WO2006111900A2 (en) | 2006-10-26 |
CN101163774A (zh) | 2008-04-16 |
WO2006111900A3 (en) | 2007-02-15 |
US20080179566A1 (en) | 2008-07-31 |
US8057702B2 (en) | 2011-11-15 |
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