JP2008536104A - 検査システム及び装置 - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/312—Contactless testing by capacitive methods
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/002—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the work function voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
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Abstract
Description
Q=CV
ここで、Qは電荷、Cは静電容量及びVは電圧である。コンデンサに流れる電流iは、下記のように前の式を微分することによって得られる。
・何らかのユーザ定義の値(しきい値)を超える電圧又は電圧内の変化(電圧のパターン又は電圧内の変化)を探すために、データを処理する。
・相関又はテンプレート照合の形式で、欠陥を表す周知のパターンとデータを比較する。
・空間データを周波数領域に変換して、固有の空間特性を有する欠陥を表す、周波数領域の中のピークを識別する。
・信号が微分であるため、ウェハ15の表面にわたって相対CPDを表す電圧を作るように、信号をある距離にわたって積分することができる。
・ウェハ15が「パターン化」されている場合、この既知のパターンを処理する前にデータから取り除くことができる。これは、空間領域又は周波数領域のいずれかで、イメージすなわち信号の変動を減算する何らかの従来の方法によって達成されると考えられる。
・予想される欠陥の大きさ、形状、及び他の特性に基づいて高い又は低い周波数を取り除くために、信号をある種の周波数フィルタリングで処理することが適当である。
・「形態学的処理」と呼ばれる、それ自体他の用途では周知の処理を行うことによってある大きさの特徴を取り除くように、信号を処理することができる。
・2つの異なる領域の間の境界でCPDセンサのピーク信号を発生する(このピーク信号は、イメージ処理用語の「エッジ」によく似た動作をする。それで、汚染された領域は、エッジ検出によって捜し出すことができる。)。
・エッジ検出アルゴリズムを適用する(2Dキャニーアルゴリズムなど)。
・しきい値が異なる複数の分解能を適用する(これにより、種々の大きさの汚染物質を検出できる、すなわち分解能が高い(しきい値が低い)場合は、小さい汚染物質を見つけることができる)。
・最も簡単な方法では、ウェハ領域全体にわたるエッジ領域によって汚染レベル(CL)を定量化する。
(x -x1)(x -x2) + (y -y1)(y -y2) = 0
わずかな測定誤差のために、異なる点の組がわずかに異なる中心座標を発生する可能性がある。回転の「真の」中心は、これらの点の軌跡(平均)であると思われる。
Zsurface = Zcurrent + Zc - Zh + (Hm - Hcurrent) / k
ここで、
Zsurfaceは、nvCPDセンサのチップが接触した表面の高さであり、
Zcurrentは、センサの現在の高さであり、
Hcurrentは、現在の高さセンサの測定値である。
前述したように、基本的なCPDの式を下記に示す。
サンプル・レート:100000
スキャン長さ:10000
バイアス:6
カプリング:AC
周波数のフィルタリング:可能
統計:標準偏差
連続収集が始動される。下記の別のパラメータが設定される。
バイアス変化の遅延:1020
振幅:2
周波数:490
バイアス電圧:−5,−3,3,5
バイアス:0
スキャン長さ:50000
統計:周波数領域
大いに反復可能なCPD測定を達成することは、測定結果に影響する可能性がある多くの要因を制御することに依存する。それらの幾つかは、以下に簡潔に列挙されている。
1)機械的な振動。振動を分離することは、結果に影響する可能性がある機械的な振動を減少するために望ましい。
2)表面のチャージング。ウェハ表面上の静電気は測定に影響する可能性があるため、イオナイザ又は他の静電気制御装置を用いて制御する必要がある。
3)温度及び振動。これらは測定に影響するため、制御する必要がある。
4)振動の大きさ。振動の大きさを制御することは重要であり、これをセンサのフィードバックを用いてモニタする必要がある。
5)測定高さ。測定高さは、それが変化すると測定結果に影響する可能性があるため制御する必要がある。
結果として生じた残留物は図11Aの光学イメージでは見えないが、図11BのnvCPDイメージでははっきりと見える。これらのイメージは、ウェハを検査するためのnvCPDセンサ12の有用性を明確に実証している。欠陥の状態及び化学成分を全域にわたって注意深く測定することにより、イメージを特定の化学薬品の状態、欠陥、又はその組合せと相関させることができる。
Claims (12)
- 少なくとも1つの接触電位差(CPD)センサを使用するセンサシステムと、材料と係合することができる、材料を受け取るための材料ステージと、前記センサシステム及び前記材料ステージと通信することにより前記センサシステム及び材料が互いに関連して移動できるようにする位置決め組立体とを有する処理システムを備える、材料をインライン処理するシステムであって、
振動形接触電位差(vCPD)センサモード及び非振動形接触電位差(nvCPD)センサモードを有するセンサシステムと、
非振動形の接触電位差プローブと材料との相対的な動きによって発生された接触電位差内の変化に応答する、材料の特徴を表す相対的な接触電位差データを作るように適合された、非振動形の接触電位差プローブと、
材料の表面の特徴を表す絶対的な接触電位差値を作るように適合され、材料の表面上の少なくとも1つの点の上に配置された、振動形の接触電位差プローブと、
前記接触電位差センサシステムに通信して、相対的な接触電位差データと絶対的な接触電位差データとを前記プローブからコンピュータに出力するコンピュータシステムと、
前記コンピュータシステムによって発生された、材料上の化学的な汚染物質及びそれらの空間分布の特徴を表し、絶対的及び相対的な接触電位差データを表す視覚イメージを提供するディスプレイと、
を含んでなるシステム。 - 前記相対的な動きは、サンプルが中心軸の周りに回転し、センサがデータのトラックを種々の半径でトレースすることによって達成されるものである請求項1に記載のシステム。
- 複数のnvCPDセンサをさらに備えるものである請求項1に記載のシステム。
- 前記相対的な動きは、ほぼ静止の状態を保つサンプルに対して前記nvCPDセンサが移動することによって提供されるものである請求項1に記載のシステム。
- 前記相対的な動きは、ほぼ静止している前記nvCPDセンサに対してサンプルが移動することによって提供されるものである請求項1に記載のシステム。
- 前記サンプルが液晶パネルを含む請求項1に記載のシステム。
- 前記サンプルが半導体ウェハを含む請求項1に記載のシステム。
- 前記相対的なCPDデータは、サンプルの表面に存在する化学的な欠陥又は化学的な非均一性を表すパターンを自動的に検出するように処理されるものである請求項1に記載のシステム。
- 少なくとも1つの振動形CPD測定点の位置は、前記nvCPDプローブによって発生されたデータに基づいた所定の規則に従って自動的に決定されるものである請求項1に記載のシステム。
- 前記接触電位差式センサシステムは、振動形モードと非振動形モードとを有する1つのプローブを備えるものである請求項1に記載のシステム。
- 前記接触電位差式センサシステムは、非振動形接触電位差プローブとして動作する第1のプローブと、振動形接触電位差プローブとして動作する第2のプローブとを備えるものである請求項1に記載のシステム。
- サンプル全体に対する相対的なCPDデータ及び少なくとも1つの点に対する絶対的なCPDデータに基づいて、サンプル全体に対する概略の絶対的なCPD値を表すイメージをディスプレイに表示する請求項1に記載のシステム。
Applications Claiming Priority (2)
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US11/078,255 US7107158B2 (en) | 2003-02-03 | 2005-03-11 | Inspection system and apparatus |
PCT/US2006/007872 WO2006098925A1 (en) | 2005-03-11 | 2006-03-06 | Inspection system and apparatus |
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JP2008536104A true JP2008536104A (ja) | 2008-09-04 |
JP2008536104A5 JP2008536104A5 (ja) | 2009-07-02 |
JP4459289B2 JP4459289B2 (ja) | 2010-04-28 |
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JP2008500790A Expired - Fee Related JP4459289B2 (ja) | 2005-03-11 | 2006-03-06 | 検査システム及び装置 |
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US (3) | US7107158B2 (ja) |
EP (1) | EP1869436B1 (ja) |
JP (1) | JP4459289B2 (ja) |
KR (1) | KR100950641B1 (ja) |
CN (1) | CN101069092B (ja) |
AT (1) | ATE445154T1 (ja) |
DE (1) | DE602006009637D1 (ja) |
TW (1) | TWI317809B (ja) |
WO (1) | WO2006098925A1 (ja) |
Cited By (1)
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JP2012517103A (ja) * | 2009-02-03 | 2012-07-26 | キューセプト テクノロジーズ インコーポレイテッド | 非振動式接触電位差センサーを用いたパターン付きウェハ検査システム |
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JP2012517103A (ja) * | 2009-02-03 | 2012-07-26 | キューセプト テクノロジーズ インコーポレイテッド | 非振動式接触電位差センサーを用いたパターン付きウェハ検査システム |
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KR100950641B1 (ko) | 2010-04-01 |
US20080162066A1 (en) | 2008-07-03 |
EP1869436A1 (en) | 2007-12-26 |
US7107158B2 (en) | 2006-09-12 |
ATE445154T1 (de) | 2009-10-15 |
CN101069092B (zh) | 2011-04-27 |
TWI317809B (en) | 2009-12-01 |
KR20070112156A (ko) | 2007-11-22 |
EP1869436B1 (en) | 2009-10-07 |
DE602006009637D1 (de) | 2009-11-19 |
WO2006098925A1 (en) | 2006-09-21 |
US20050162178A1 (en) | 2005-07-28 |
US20070010954A1 (en) | 2007-01-11 |
US7634365B2 (en) | 2009-12-15 |
TW200710386A (en) | 2007-03-16 |
CN101069092A (zh) | 2007-11-07 |
JP4459289B2 (ja) | 2010-04-28 |
US7337076B2 (en) | 2008-02-26 |
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