JP2008535259A - 半導体反射器内の統合された光検出器 - Google Patents
半導体反射器内の統合された光検出器 Download PDFInfo
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- JP2008535259A JP2008535259A JP2008504232A JP2008504232A JP2008535259A JP 2008535259 A JP2008535259 A JP 2008535259A JP 2008504232 A JP2008504232 A JP 2008504232A JP 2008504232 A JP2008504232 A JP 2008504232A JP 2008535259 A JP2008535259 A JP 2008535259A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 70
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 239000013307 optical fiber Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 19
- 238000010168 coupling process Methods 0.000 abstract description 19
- 238000005859 coupling reaction Methods 0.000 abstract description 19
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- IOVARPVVZDOPGQ-UHFFFAOYSA-N 1,2,3,5-tetrachloro-4-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=C(Cl)C=C(Cl)C(Cl)=C1Cl IOVARPVVZDOPGQ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12104—Mirror; Reflectors or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (20)
- 入射光ビームを光学目的地に向かって反射するために、半導体材料の上に定められる反射表面と、
前記半導体材料の前記反射表面の内部及び/又は周りに一体的に統合される光検出器とを含み、該光検出器は、前記入射光ビームを検出するために、前記半導体材料の前記反射表面に配置される、
装置。 - 前記入射光ビームを生成するために、面発光レーザをさらに含む、請求項1に記載の装置。
- 前記半導体材料は、集積回路チップに含まれるシリコン基板を含む、請求項1に記載の装置。
- 前記光学目的地に配置される光ファイバをさらに含む、請求項1に記載の装置。
- 前記光ファイバは、前記半導体材料内に定められるV溝内に配置される、請求項4に記載の装置。
- 前記光検出器は、前記入射光ビームを反射する前記反射表面上の場所で前記半導体材料内に一体的に統合される光検出器を含む、請求項1に記載の装置。
- 前記入射光ビームを反射する前記反射表面上の前記場所にある前記光検出器の中心領域は、前記入射光ビームを反射する前記反射表面上の前記場所にある前記光検出器の外側領域に対して実質的に反射的である、請求項6に記載の装置。
- 前記中心領域の地域が、前記外側領域の地域よりも実質的に大きい、請求項7に記載の装置。
- 前記外側領域は、実質的に吸収的である、請求項8に記載の装置。
- 前記反射表面は、実質的に平面的である、請求項1に記載の装置。
- 前記反射表面は、実質的に非平面的である、請求項1に記載の装置。
- 前記光検出器は、前記半導体材料内に統合される複数の光検出器のうちの1つであり、前記複数の光検出器の各々は、その上に入射し且つそこから反射される複数の光ビームのそれぞれ1つを個別に検出するために、それぞれの反射表面上に配置される、請求項1に記載の装置。
- 光ビームを半導体材料に向けて方向付けるステップと、
前記光ビームを前記半導体材料内に定められる反射表面から実質的に反射するステップと、
前記半導体材料の前記反射表面に一体的に統合される光検出器を用いて、前記半導体材料内に定められる前記反射表面上に入射する前記光ビームを検出するステップと、
前記半導体材料から反射される前記光ビームを光学目的地に方向付けるステップとを含む、
方法。 - 前記半導体材料の前記反射表面に一体的に統合される前記光検出器を用いて、光源から受光する前記光ビームのパワーを監視するステップをさらに含む、請求項13に記載の方法。
- 前記半導体材料の前記反射表面に一体的に統合される前記光検出器を用いて、前記光ビームを生成する光源によって生成される信号の消光率を測定するステップをさらに含む、請求項13に記載の方法。
- 前記半導体材料から反射される前記光ビームを方向付けるステップは、前記光ビームを前記反射表面を用いて前記光学目的地に集束するステップを含む、請求項13に記載の方法。
- 光ビームを生成する光源と、
該光源から受光する前記光ビームを反射するために、半導体材料の上に定められる反射表面と、
前記入射光ビームを検出するために前記半導体材料の前記反射表面内に配置される、前記半導体材料の前記反射表面内に一体的に統合される光検出器と、
前記半導体材料内に配置される光ファイバとを含み、前記反射表面は、前記光源から受光する前記光ビームを前記光ファイバの一端に反射し、
前記光ビームを受光するために、前記光ファイバの他端に光学的に結合される光受信機を含む、
システム。 - 前記光源は、面発光レーザを含む、請求項17に記載のシステム。
- 前記半導体材料内に含まれ且つ前記光検出器に結合される集積回路をさらに含み、該集積回路は、前記光ビームを検出するために、前記光検出器からの電気信号を受信するよう結合される、請求項17に記載のシステム。
- 前記半導体材料とは別個の半導体基板内に含まれ且つ前記光検出器に電気的に結合される集積回路をさらに含み、該集積回路は、前記光ビームを検出するために、前記光検出器からの電気信号を受信するよう結合される、請求項17に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/092,059 US7782921B2 (en) | 2005-03-28 | 2005-03-28 | Integrated optical detector in semiconductor reflector |
US11/092,059 | 2005-03-28 | ||
PCT/US2006/011132 WO2006105030A1 (en) | 2005-03-28 | 2006-03-24 | Integrated optical detector in semiconductor reflector |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008535259A true JP2008535259A (ja) | 2008-08-28 |
JP4902637B2 JP4902637B2 (ja) | 2012-03-21 |
Family
ID=36649544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008504232A Expired - Fee Related JP4902637B2 (ja) | 2005-03-28 | 2006-03-24 | 半導体反射器内の統合された光検出器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7782921B2 (ja) |
EP (1) | EP1864335B1 (ja) |
JP (1) | JP4902637B2 (ja) |
TW (1) | TWI334498B (ja) |
WO (1) | WO2006105030A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7306378B2 (en) | 2004-05-06 | 2007-12-11 | Intel Corporation | Method and apparatus providing an electrical-optical coupler |
US7782921B2 (en) | 2005-03-28 | 2010-08-24 | Intel Corporation | Integrated optical detector in semiconductor reflector |
KR101682269B1 (ko) * | 2013-09-25 | 2016-12-05 | 주식회사 엘지화학 | 레이저 커팅 장치 및 그 커팅 방법 |
Citations (6)
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JPS55145386A (en) * | 1979-04-30 | 1980-11-12 | Xerox Corp | Hybrid semiconductor laser*detector |
DE4411380A1 (de) * | 1994-03-31 | 1995-10-05 | Siemens Ag | Sende- und Empfangsmodul für optoelektronischen Ping-Pong-Betrieb |
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JP2002057312A (ja) * | 2000-08-08 | 2002-02-22 | Denso Corp | 光検出センサおよびその製造方法 |
US20030048451A1 (en) * | 2001-09-07 | 2003-03-13 | The United States Of America Represented By The Secretary Of The Navy | Light scattering detector |
JP2003167175A (ja) * | 2001-12-04 | 2003-06-13 | Matsushita Electric Ind Co Ltd | 光実装基板及び光デバイス |
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US7306378B2 (en) | 2004-05-06 | 2007-12-11 | Intel Corporation | Method and apparatus providing an electrical-optical coupler |
US7782921B2 (en) | 2005-03-28 | 2010-08-24 | Intel Corporation | Integrated optical detector in semiconductor reflector |
-
2005
- 2005-03-28 US US11/092,059 patent/US7782921B2/en not_active Expired - Fee Related
-
2006
- 2006-03-24 EP EP06739740.6A patent/EP1864335B1/en active Active
- 2006-03-24 WO PCT/US2006/011132 patent/WO2006105030A1/en active Application Filing
- 2006-03-24 JP JP2008504232A patent/JP4902637B2/ja not_active Expired - Fee Related
- 2006-03-28 TW TW095110755A patent/TWI334498B/zh not_active IP Right Cessation
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JPS55145386A (en) * | 1979-04-30 | 1980-11-12 | Xerox Corp | Hybrid semiconductor laser*detector |
DE4411380A1 (de) * | 1994-03-31 | 1995-10-05 | Siemens Ag | Sende- und Empfangsmodul für optoelektronischen Ping-Pong-Betrieb |
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JP2003167175A (ja) * | 2001-12-04 | 2003-06-13 | Matsushita Electric Ind Co Ltd | 光実装基板及び光デバイス |
Also Published As
Publication number | Publication date |
---|---|
EP1864335B1 (en) | 2013-09-04 |
US20060215726A1 (en) | 2006-09-28 |
US7782921B2 (en) | 2010-08-24 |
TWI334498B (en) | 2010-12-11 |
TW200641426A (en) | 2006-12-01 |
EP1864335A1 (en) | 2007-12-12 |
JP4902637B2 (ja) | 2012-03-21 |
WO2006105030A1 (en) | 2006-10-05 |
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