JP2008528308A - 電気処理プロファイル制御 - Google Patents

電気処理プロファイル制御 Download PDF

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Publication number
JP2008528308A
JP2008528308A JP2007553195A JP2007553195A JP2008528308A JP 2008528308 A JP2008528308 A JP 2008528308A JP 2007553195 A JP2007553195 A JP 2007553195A JP 2007553195 A JP2007553195 A JP 2007553195A JP 2008528308 A JP2008528308 A JP 2008528308A
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JP
Japan
Prior art keywords
electrode
substrate
polishing
biasing
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007553195A
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English (en)
Japanese (ja)
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JP2008528308A5 (enExample
Inventor
アントイン， ピー． マネンズ，
ヴラディミアー ガルバート，
ヤン ワン，
アライン デュボウスト，
ドナルド， ジェイ． ケイ． オルガド，
リアン‐ユー チェン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2008528308A publication Critical patent/JP2008528308A/ja
Publication of JP2008528308A5 publication Critical patent/JP2008528308A5/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
JP2007553195A 2005-01-26 2006-01-24 電気処理プロファイル制御 Pending JP2008528308A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/043,570 US7655565B2 (en) 2005-01-26 2005-01-26 Electroprocessing profile control
PCT/US2006/002595 WO2006081285A2 (en) 2005-01-26 2006-01-24 Electroprocessing profile control

Publications (2)

Publication Number Publication Date
JP2008528308A true JP2008528308A (ja) 2008-07-31
JP2008528308A5 JP2008528308A5 (enExample) 2009-01-22

Family

ID=36587252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007553195A Pending JP2008528308A (ja) 2005-01-26 2006-01-24 電気処理プロファイル制御

Country Status (6)

Country Link
US (3) US7655565B2 (enExample)
JP (1) JP2008528308A (enExample)
KR (1) KR20070095396A (enExample)
CN (3) CN101480743A (enExample)
TW (1) TWI286960B (enExample)
WO (1) WO2006081285A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017514307A (ja) * 2014-04-23 2017-06-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 化学機械平坦化後の基板洗浄のためのシステム、方法、及び装置
JP2021132209A (ja) * 2020-02-19 2021-09-09 株式会社サイオクス 研磨用パッド、および導電性半導体基板の製造方法

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TWI523976B (zh) * 2010-05-19 2016-03-01 諾菲勒斯系統公司 利用具有雙態抑制劑的電解液之矽穿孔填充
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US8657653B2 (en) 2010-09-30 2014-02-25 Nexplanar Corporation Homogeneous polishing pad for eddy current end-point detection
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GB201210120D0 (en) * 2012-05-10 2012-07-25 Renishaw Plc Laser sintered part and method of manufacture
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CN105316754B (zh) * 2014-07-29 2019-08-16 盛美半导体设备（上海）有限公司 电化学加工工艺及电化学加工装置
CN109702281B (zh) * 2019-01-31 2021-04-02 上海交通大学 电弧磨削复合工具电极
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US12198944B2 (en) 2020-11-11 2025-01-14 Applied Materials, Inc. Substrate handling in a modular polishing system with single substrate cleaning chambers
CN116079580A (zh) * 2023-02-03 2023-05-09 北京晶亦精微科技股份有限公司 一种电化学机械抛光装置
US12224186B2 (en) 2023-04-03 2025-02-11 Applied Materials, Inc. Apparatus and method of brush cleaning using periodic chemical treatments
CN120206393A (zh) * 2023-12-26 2025-06-27 杭州众硅电子科技有限公司 一种电化学机械抛光及平坦化装置

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CN101143433A (zh) 2008-03-19
US7709382B2 (en) 2010-05-04
CN101480743A (zh) 2009-07-15
WO2006081285A2 (en) 2006-08-03
CN101107090A (zh) 2008-01-16
US20060166500A1 (en) 2006-07-27
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US20080047841A1 (en) 2008-02-28
WO2006081285A3 (en) 2006-09-14

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