JP2008523584A - 半導体基板上にエピタキシャル層を形成する方法およびこの方法によって形成するデバイス - Google Patents
半導体基板上にエピタキシャル層を形成する方法およびこの方法によって形成するデバイス Download PDFInfo
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- JP2008523584A JP2008523584A JP2007543957A JP2007543957A JP2008523584A JP 2008523584 A JP2008523584 A JP 2008523584A JP 2007543957 A JP2007543957 A JP 2007543957A JP 2007543957 A JP2007543957 A JP 2007543957A JP 2008523584 A JP2008523584 A JP 2008523584A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/916—Autodoping control or utilization
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Abstract
Description
‐外方拡散:これは、高濃度のドープ基板から成長中のエピタキシャル層の中への、ドーパントの固体拡散源に関連する
‐気相オートドーピング:これは、高濃度のドープ基板から基板の周囲のスペースへのドーパントの蒸発、および、成長中のエピタキシャル層内への同じドーパントの再結合に関連する
SiO2層とSi基板1との間に挟まれたSi−X層5,5’によって、SiO2/Si界面の粗さが制御される。これにより、高濃度のn型ドーパント(または注入ドーズ)を用いることができるようになる;
埋め込み層の頂部層におけるn型ドーパントの量を減らすことにより、オートドーピングおよび/または外方拡散を低減できる。
1.エピタキシャル層の成長中の、オートドーピングおよび/または外方拡散が低減する;
2.エピタキシャル層の成長前の、埋め込み層の表面粗さを低減し、これは、エピタキシャル層、並びに、後にエピタキシャル層の内部およびその上に形成するデバイスの、質の向上へと繋がる;さらに、
3.n型の埋め込み層のエッジにおけるドーピング特性が、従来と比べより急勾配となる。
Claims (10)
- 半導体製品の形成方法であって、
‐半導体基板を用立るステップと、
‐Xを所定の原子種として、第1の深さを有するSi−X層を、前記半導体基板の少なくとも一部の上に設けるステップと、
‐n型のドーパント材料でドープし、かつ前記第1の深さより十分に深い第2の深さを有するドープ層を、前記半導体基板の前記少なくとも一部に設けるステップと、
‐前記半導体基板の内部に、二酸化シリコン/シリコン界面を有する二酸化シリコン層を形成するための酸化処理を行うステップであって、前記X原子は、前記二酸化シリコン/シリコン界面にて、前記n型の原子よりも高い偏析特性を有するような原子を選択して、X原子およびn型の原子が、前記二酸化シリコン/シリコン界面にて、前記二酸化シリコン層によって、前記半導体基板内へ押し込まれるようにするステップと、
‐前記二酸化シリコン層を除去するステップと、
‐前記半導体基板上にシリコンのエピタキシャル層を成長させるステップと、
を含む、半導体製品の形成方法。 - シリコン半導体基板の形成方法であって、
‐半導体基板を用立るステップと、
‐前記半導体基板の少なくとも一部に、n型のドーパント材料でドープした、第1の深さを有するドープ層を設けるステップと、
‐Xを所定の原子種として、前記第1の深さより十分に浅い第2の深さを有するSi−X層を、前記半導体基板の前記少なくとも一部の上に設けるステップと、
‐前記半導体基板の内部に、二酸化シリコン/シリコン界面を有する二酸化シリコン層を形成するための酸化処理を行うステップであって、前記X原子は、前記二酸化シリコン/シリコン界面にて、前記n型の原子よりも高い偏析特性を有するような原子を選択して、前記X原子およびn型の原子が、前記二酸化シリコン/シリコン界面にて、前記二酸化シリコンによって、前記半導体基板内へ押し込まれるようにするステップと、
‐前記二酸化シリコン層を除去するステップと、
‐前記半導体基板上にシリコンのエピタキシャル層を成長させるステップと、
を含む、シリコン半導体基板の形成方法。 - 前記X原子種がGeを含む、請求項1または2に記載の方法。
- 前記n型のドーパント材料が、AsまたはPの少なくとも1つである、請求項1〜3のいずれか1項に記載の方法。
- 前記半導体基板の前記少なくとも一部にドープ層を設けるステップが、
‐前記半導体基板の前記少なくとも一部の上に、所定の厚さの絶縁層を設けるサブステップと、
‐前記ドープ層を形成するのに、前記絶縁層を介して前記n型ドーパント材料を注入処理するサブステップと、
‐前記絶縁層を除去するサブステップと、
を含む、請求項1〜4のいずれか1項に記載の方法。 - 前記絶縁層が二酸化シリコンを含む、請求項5に記載の方法。
- 前記Si−X層が所定濃度のCを含む、請求項1〜6のいずれか1項に記載の方法。
- 前記エピタキシャル層が、前記埋め込み層におけるドーパント濃度よりも低濃度のn型ドーパント材料を含む、請求項1〜7のいずれか1項に記載の方法。
- 前記半導体基板に、前記p型の埋め込み層上のp型のドープ層およびp型のエピタキシャル層を有する少なくとも1つの他の部分を設けるステップを含む、請求項1〜8のいずれか1項に記載の方法。
- 請求項1〜9のいずれか1項に記載の方法によって製造した半導体デバイス。
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EP04106310 | 2004-12-06 | ||
EP04106310.8 | 2004-12-06 | ||
PCT/IB2005/053945 WO2006061731A1 (en) | 2004-12-06 | 2005-11-29 | Method of producing an epitaxial layer on a semiconductor substrate and device produced with such a method |
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JP2008523584A true JP2008523584A (ja) | 2008-07-03 |
JP4696127B2 JP4696127B2 (ja) | 2011-06-08 |
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US (1) | US7923339B2 (ja) |
EP (1) | EP1825503B1 (ja) |
JP (1) | JP4696127B2 (ja) |
CN (1) | CN100533685C (ja) |
TW (1) | TW200625459A (ja) |
WO (1) | WO2006061731A1 (ja) |
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JP2014138073A (ja) * | 2013-01-16 | 2014-07-28 | Tokyo Electron Ltd | シリコン酸化物膜の成膜方法 |
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US8957482B2 (en) | 2009-03-31 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse and related applications |
US8912602B2 (en) | 2009-04-14 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
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US8440517B2 (en) | 2010-10-13 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET and method of fabricating the same |
US8264032B2 (en) * | 2009-09-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
US8298925B2 (en) | 2010-11-08 | 2012-10-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
US8629478B2 (en) | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
US9484462B2 (en) | 2009-09-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
US8264021B2 (en) | 2009-10-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods for forming the same |
US8482073B2 (en) | 2010-03-25 | 2013-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including FINFETs and methods for forming the same |
US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
US8623728B2 (en) * | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
US8497528B2 (en) | 2010-05-06 | 2013-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure |
US8472227B2 (en) | 2010-01-27 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and methods for forming the same |
US9040393B2 (en) | 2010-01-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor structure |
US8603924B2 (en) | 2010-10-19 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
US8769446B2 (en) | 2010-11-12 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for increasing fin device density for unaligned fins |
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CN102412271A (zh) * | 2011-09-15 | 2012-04-11 | 上海晶盟硅材料有限公司 | 外延片衬底、外延片及半导体器件 |
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- 2005-11-29 WO PCT/IB2005/053945 patent/WO2006061731A1/en active Application Filing
- 2005-11-29 EP EP05807007A patent/EP1825503B1/en active Active
- 2005-11-29 CN CNB2005800419211A patent/CN100533685C/zh active Active
- 2005-11-29 US US11/721,033 patent/US7923339B2/en active Active
- 2005-11-29 JP JP2007543957A patent/JP4696127B2/ja not_active Expired - Fee Related
- 2005-12-02 TW TW094142656A patent/TW200625459A/zh unknown
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EP1825503B1 (en) | 2012-08-22 |
US7923339B2 (en) | 2011-04-12 |
CN100533685C (zh) | 2009-08-26 |
TW200625459A (en) | 2006-07-16 |
US20090305488A1 (en) | 2009-12-10 |
CN101073148A (zh) | 2007-11-14 |
WO2006061731A1 (en) | 2006-06-15 |
JP4696127B2 (ja) | 2011-06-08 |
EP1825503A1 (en) | 2007-08-29 |
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