JP2008514030A5 - - Google Patents
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- Publication number
- JP2008514030A5 JP2008514030A5 JP2007533549A JP2007533549A JP2008514030A5 JP 2008514030 A5 JP2008514030 A5 JP 2008514030A5 JP 2007533549 A JP2007533549 A JP 2007533549A JP 2007533549 A JP2007533549 A JP 2007533549A JP 2008514030 A5 JP2008514030 A5 JP 2008514030A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- diode according
- light
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 229910002601 GaN Inorganic materials 0.000 claims 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 4
- 230000004907 flux Effects 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 239000004332 silver Substances 0.000 claims 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 239000013078 crystal Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/951,042 US7259402B2 (en) | 2004-09-22 | 2004-09-22 | High efficiency group III nitride-silicon carbide light emitting diode |
| US11/037,965 US8513686B2 (en) | 2004-09-22 | 2005-01-18 | High output small area group III nitride LEDs |
| PCT/US2005/033013 WO2006036582A1 (en) | 2004-09-22 | 2005-09-15 | High output small area group iii nitride leds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008514030A JP2008514030A (ja) | 2008-05-01 |
| JP2008514030A5 true JP2008514030A5 (enExample) | 2012-01-19 |
Family
ID=35601712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007533549A Pending JP2008514030A (ja) | 2004-09-22 | 2005-09-15 | 高出力小面積iii族窒化物led |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8513686B2 (enExample) |
| EP (1) | EP1792353B1 (enExample) |
| JP (1) | JP2008514030A (enExample) |
| KR (2) | KR20090099593A (enExample) |
| TW (1) | TWI312584B (enExample) |
| WO (1) | WO2006036582A1 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8487337B2 (en) | 2006-04-24 | 2013-07-16 | Cree, Inc. | Side view surface mount LED |
| US8617909B2 (en) | 2004-07-02 | 2013-12-31 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
| US8901585B2 (en) | 2003-05-01 | 2014-12-02 | Cree, Inc. | Multiple component solid state white light |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US9666772B2 (en) | 2003-04-30 | 2017-05-30 | Cree, Inc. | High powered light emitter packages with compact optics |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
Families Citing this family (37)
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|---|---|---|---|---|
| US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
| JP2009509339A (ja) * | 2005-09-16 | 2009-03-05 | クリー インコーポレイテッド | 炭化ケイ素パワーデバイスを有する半導体ウェハを処理する方法 |
| US7846391B2 (en) * | 2006-05-22 | 2010-12-07 | Lumencor, Inc. | Bioanalytical instrumentation using a light source subsystem |
| US7910945B2 (en) * | 2006-06-30 | 2011-03-22 | Cree, Inc. | Nickel tin bonding system with barrier layer for semiconductor wafers and devices |
| US8643195B2 (en) | 2006-06-30 | 2014-02-04 | Cree, Inc. | Nickel tin bonding system for semiconductor wafers and devices |
| US20080042145A1 (en) * | 2006-08-18 | 2008-02-21 | Helmut Hagleitner | Diffusion barrier for light emitting diodes |
| US7910938B2 (en) * | 2006-09-01 | 2011-03-22 | Cree, Inc. | Encapsulant profile for light emitting diodes |
| US8425271B2 (en) | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
| US7855459B2 (en) | 2006-09-22 | 2010-12-21 | Cree, Inc. | Modified gold-tin system with increased melting temperature for wafer bonding |
| JP2010512661A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高特性無極性iii族窒化物光デバイスの有機金属化学気相成長法(mocvd)による成長 |
| US9178121B2 (en) * | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US7709811B2 (en) * | 2007-07-03 | 2010-05-04 | Conner Arlie R | Light emitting diode illumination system |
| US8098375B2 (en) | 2007-08-06 | 2012-01-17 | Lumencor, Inc. | Light emitting diode illumination system |
| DE102007046519A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| TWI413453B (zh) * | 2008-11-20 | 2013-10-21 | Epistar Corp | 交流發光二極體裝置 |
| US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| KR101017395B1 (ko) * | 2008-12-24 | 2011-02-28 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| US8242462B2 (en) | 2009-01-23 | 2012-08-14 | Lumencor, Inc. | Lighting design of high quality biomedical devices |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| US8362458B2 (en) * | 2010-12-27 | 2013-01-29 | Industrial Technology Research Institute | Nitirde semiconductor light emitting diode |
| US8466436B2 (en) | 2011-01-14 | 2013-06-18 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| US8389957B2 (en) | 2011-01-14 | 2013-03-05 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| US9642515B2 (en) | 2012-01-20 | 2017-05-09 | Lumencor, Inc. | Solid state continuous white light source |
| US9217561B2 (en) | 2012-06-15 | 2015-12-22 | Lumencor, Inc. | Solid state light source for photocuring |
| US10971612B2 (en) | 2019-06-13 | 2021-04-06 | Cree, Inc. | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
| US10923585B2 (en) | 2019-06-13 | 2021-02-16 | Cree, Inc. | High electron mobility transistors having improved contact spacing and/or improved contact vias |
| US11769768B2 (en) | 2020-06-01 | 2023-09-26 | Wolfspeed, Inc. | Methods for pillar connection on frontside and passive device integration on backside of die |
| US12015075B2 (en) | 2021-05-20 | 2024-06-18 | Macom Technology Solutions Holdings, Inc. | Methods of manufacturing high electron mobility transistors having a modified interface region |
| US12446252B2 (en) | 2021-05-20 | 2025-10-14 | Macom Technology Solutions Holdings, Inc. | Transistors including semiconductor surface modification and related fabrication methods |
| US12009417B2 (en) | 2021-05-20 | 2024-06-11 | Macom Technology Solutions Holdings, Inc. | High electron mobility transistors having improved performance |
| US11842937B2 (en) | 2021-07-30 | 2023-12-12 | Wolfspeed, Inc. | Encapsulation stack for improved humidity performance and related fabrication methods |
| US12218202B2 (en) | 2021-09-16 | 2025-02-04 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
| TWI887662B (zh) * | 2022-06-01 | 2025-06-21 | 美商科銳Led公司 | 用於減少接合金屬之空洞的發光二極體晶片中的接觸結構 |
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| JPS6159886A (ja) | 1984-08-31 | 1986-03-27 | Fujitsu Ltd | 光半導体装置の製造方法 |
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| US4912532A (en) * | 1988-08-26 | 1990-03-27 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
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| US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
| DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
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| US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
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-
2005
- 2005-01-18 US US11/037,965 patent/US8513686B2/en not_active Expired - Lifetime
- 2005-09-15 KR KR1020097017902A patent/KR20090099593A/ko not_active Ceased
- 2005-09-15 JP JP2007533549A patent/JP2008514030A/ja active Pending
- 2005-09-15 EP EP05812300.1A patent/EP1792353B1/en not_active Expired - Lifetime
- 2005-09-15 TW TW094131892A patent/TWI312584B/zh not_active IP Right Cessation
- 2005-09-15 KR KR1020077006473A patent/KR20070046182A/ko not_active Ceased
- 2005-09-15 WO PCT/US2005/033013 patent/WO2006036582A1/en not_active Ceased
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9666772B2 (en) | 2003-04-30 | 2017-05-30 | Cree, Inc. | High powered light emitter packages with compact optics |
| US8901585B2 (en) | 2003-05-01 | 2014-12-02 | Cree, Inc. | Multiple component solid state white light |
| US8617909B2 (en) | 2004-07-02 | 2013-12-31 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
| US8487337B2 (en) | 2006-04-24 | 2013-07-16 | Cree, Inc. | Side view surface mount LED |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
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