KR20090099593A - 고출력 소면적의 3족-질화물계 발광 다이오드 - Google Patents

고출력 소면적의 3족-질화물계 발광 다이오드 Download PDF

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Publication number
KR20090099593A
KR20090099593A KR1020097017902A KR20097017902A KR20090099593A KR 20090099593 A KR20090099593 A KR 20090099593A KR 1020097017902 A KR1020097017902 A KR 1020097017902A KR 20097017902 A KR20097017902 A KR 20097017902A KR 20090099593 A KR20090099593 A KR 20090099593A
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KR
South Korea
Prior art keywords
light emitting
emitting diode
diode
silicon carbide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020097017902A
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English (en)
Korean (ko)
Inventor
존 아담 에드몬드
Original Assignee
크리 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/951,042 external-priority patent/US7259402B2/en
Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20090099593A publication Critical patent/KR20090099593A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020097017902A 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드 Ceased KR20090099593A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/951,042 US7259402B2 (en) 2004-09-22 2004-09-22 High efficiency group III nitride-silicon carbide light emitting diode
US10/951,042 2004-09-22
US11/037,965 2005-01-18
US11/037,965 US8513686B2 (en) 2004-09-22 2005-01-18 High output small area group III nitride LEDs

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020077006473A Division KR20070046182A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드

Publications (1)

Publication Number Publication Date
KR20090099593A true KR20090099593A (ko) 2009-09-22

Family

ID=35601712

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020097017902A Ceased KR20090099593A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드
KR1020077006473A Ceased KR20070046182A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020077006473A Ceased KR20070046182A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드

Country Status (6)

Country Link
US (1) US8513686B2 (enExample)
EP (1) EP1792353B1 (enExample)
JP (1) JP2008514030A (enExample)
KR (2) KR20090099593A (enExample)
TW (1) TWI312584B (enExample)
WO (1) WO2006036582A1 (enExample)

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Also Published As

Publication number Publication date
TW200625690A (en) 2006-07-16
EP1792353A1 (en) 2007-06-06
KR20070046182A (ko) 2007-05-02
TWI312584B (en) 2009-07-21
US8513686B2 (en) 2013-08-20
JP2008514030A (ja) 2008-05-01
EP1792353B1 (en) 2020-03-11
US20060060879A1 (en) 2006-03-23
WO2006036582A1 (en) 2006-04-06

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Patent event date: 20120426

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20120329

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20110603

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20130313

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20120329

Effective date: 20140820

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20140820

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20120329

Decision date: 20140820

Appeal identifier: 2012101003043