JP2008514030A - 高出力小面積ｉｉｉ族窒化物ｌｅｄ - Google Patents

高出力小面積ｉｉｉ族窒化物ｌｅｄ Download PDF

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Publication number
JP2008514030A
JP2008514030A JP2007533549A JP2007533549A JP2008514030A JP 2008514030 A JP2008514030 A JP 2008514030A JP 2007533549 A JP2007533549 A JP 2007533549A JP 2007533549 A JP2007533549 A JP 2007533549A JP 2008514030 A JP2008514030 A JP 2008514030A
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JP
Japan
Prior art keywords
light emitting
emitting diode
radiant flux
unit area
diode according
Prior art date
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Pending
Application number
JP2007533549A
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English (en)
Japanese (ja)
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JP2008514030A5 (enExample
Inventor
エドモンド，ジョン・アダム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
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Filing date
Publication date
Priority claimed from US10/951,042 external-priority patent/US7259402B2/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2008514030A publication Critical patent/JP2008514030A/ja
Publication of JP2008514030A5 publication Critical patent/JP2008514030A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
JP2007533549A 2004-09-22 2005-09-15 高出力小面積ｉｉｉ族窒化物ｌｅｄ Pending JP2008514030A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/951,042 US7259402B2 (en) 2004-09-22 2004-09-22 High efficiency group III nitride-silicon carbide light emitting diode
US11/037,965 US8513686B2 (en) 2004-09-22 2005-01-18 High output small area group III nitride LEDs
PCT/US2005/033013 WO2006036582A1 (en) 2004-09-22 2005-09-15 High output small area group iii nitride leds

Publications (2)

Publication Number Publication Date
JP2008514030A true JP2008514030A (ja) 2008-05-01
JP2008514030A5 JP2008514030A5 (enExample) 2012-01-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007533549A Pending JP2008514030A (ja) 2004-09-22 2005-09-15 高出力小面積ｉｉｉ族窒化物ｌｅｄ

Country Status (6)

Country Link
US (1) US8513686B2 (enExample)
EP (1) EP1792353B1 (enExample)
JP (1) JP2008514030A (enExample)
KR (2) KR20090099593A (enExample)
TW (1) TWI312584B (enExample)
WO (1) WO2006036582A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153814A (ja) * 2008-12-24 2010-07-08 Seoul Opto Devices Co Ltd 複数の発光セルを有する発光素子及びその製造方法
US8487337B2 (en) 2006-04-24 2013-07-16 Cree, Inc. Side view surface mount LED
US8617909B2 (en) 2004-07-02 2013-12-31 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US8858004B2 (en) 2005-12-22 2014-10-14 Cree, Inc. Lighting device
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2009509339A (ja) * 2005-09-16 2009-03-05 クリー インコーポレイテッド 炭化ケイ素パワーデバイスを有する半導体ウェハを処理する方法
US7846391B2 (en) * 2006-05-22 2010-12-07 Lumencor, Inc. Bioanalytical instrumentation using a light source subsystem
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US8643195B2 (en) 2006-06-30 2014-02-04 Cree, Inc. Nickel tin bonding system for semiconductor wafers and devices
US20080042145A1 (en) * 2006-08-18 2008-02-21 Helmut Hagleitner Diffusion barrier for light emitting diodes
US7910938B2 (en) * 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US8425271B2 (en) 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
US7855459B2 (en) 2006-09-22 2010-12-21 Cree, Inc. Modified gold-tin system with increased melting temperature for wafer bonding
JP2010512661A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高特性無極性ｉｉｉ族窒化物光デバイスの有機金属化学気相成長法（ｍｏｃｖｄ）による成長
US9178121B2 (en) * 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7709811B2 (en) * 2007-07-03 2010-05-04 Conner Arlie R Light emitting diode illumination system
US8098375B2 (en) 2007-08-06 2012-01-17 Lumencor, Inc. Light emitting diode illumination system
DE102007046519A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
TWI413453B (zh) * 2008-11-20 2013-10-21 Epistar Corp 交流發光二極體裝置
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8242462B2 (en) 2009-01-23 2012-08-14 Lumencor, Inc. Lighting design of high quality biomedical devices
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US8362458B2 (en) * 2010-12-27 2013-01-29 Industrial Technology Research Institute Nitirde semiconductor light emitting diode
US8466436B2 (en) 2011-01-14 2013-06-18 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US8389957B2 (en) 2011-01-14 2013-03-05 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9642515B2 (en) 2012-01-20 2017-05-09 Lumencor, Inc. Solid state continuous white light source
US9217561B2 (en) 2012-06-15 2015-12-22 Lumencor, Inc. Solid state light source for photocuring
US10971612B2 (en) 2019-06-13 2021-04-06 Cree, Inc. High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
US10923585B2 (en) 2019-06-13 2021-02-16 Cree, Inc. High electron mobility transistors having improved contact spacing and/or improved contact vias
US11769768B2 (en) 2020-06-01 2023-09-26 Wolfspeed, Inc. Methods for pillar connection on frontside and passive device integration on backside of die
US12015075B2 (en) 2021-05-20 2024-06-18 Macom Technology Solutions Holdings, Inc. Methods of manufacturing high electron mobility transistors having a modified interface region
US12446252B2 (en) 2021-05-20 2025-10-14 Macom Technology Solutions Holdings, Inc. Transistors including semiconductor surface modification and related fabrication methods
US12009417B2 (en) 2021-05-20 2024-06-11 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having improved performance
US11842937B2 (en) 2021-07-30 2023-12-12 Wolfspeed, Inc. Encapsulation stack for improved humidity performance and related fabrication methods
US12218202B2 (en) 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
TWI887662B (zh) * 2022-06-01 2025-06-21 美商科銳Ｌｅｄ公司 用於減少接合金屬之空洞的發光二極體晶片中的接觸結構

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004010509A2 (en) * 2002-07-22 2004-01-29 Cree, Inc. Light emitting diode including barrier layers and manufacturing methods therefor
JP2004521494A (ja) * 2001-02-01 2004-07-15 クリー　インコーポレイテッド 光抽出用の改良を含む発光ダイオード及びその製造方法

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US465809A (en) * 1891-12-22 Electrical testing-instrument
US2001622A (en) * 1930-10-27 1935-05-14 David G Mccaa Method of and means for reducing electrical disturbances
FR2554606B1 (fr) * 1983-11-04 1987-04-10 Thomson Csf Dispositif optique de concentration du rayonnement lumineux emis par une diode electroluminescente, et diode electroluminescente comportant un tel dispositif
JPS6159886A (ja) 1984-08-31 1986-03-27 Fujitsu Ltd 光半導体装置の製造方法
JPH0770755B2 (ja) * 1988-01-21 1995-07-31 三菱化学株式会社 高輝度ｌｅｄ用エピタキシャル基板及びその製造方法
US4912532A (en) * 1988-08-26 1990-03-27 Hewlett-Packard Company Electro-optical device with inverted transparent substrate and method for making same
US5103271A (en) * 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5985687A (en) * 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JPH11238913A (ja) 1998-02-20 1999-08-31 Namiki Precision Jewel Co Ltd 半導体発光デバイスチップ
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6258699B1 (en) * 1999-05-10 2001-07-10 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
US6465809B1 (en) 1999-06-09 2002-10-15 Kabushiki Kaisha Toshiba Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
AU4139101A (en) * 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US20020068373A1 (en) * 2000-02-16 2002-06-06 Nova Crystals, Inc. Method for fabricating light emitting diodes
DE10008583A1 (de) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips
US6335263B1 (en) * 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
JP4060511B2 (ja) * 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
US6410940B1 (en) * 2000-06-15 2002-06-25 Kansas State University Research Foundation Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications
DE10033496A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
JP4091261B2 (ja) * 2000-10-31 2008-05-28 株式会社東芝 半導体発光素子及びその製造方法
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6468824B2 (en) * 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
EP1263058B1 (en) 2001-05-29 2012-04-18 Toyoda Gosei Co., Ltd. Light-emitting element
JP2002368263A (ja) * 2001-06-06 2002-12-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
EP2034530B1 (en) * 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) * 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US6924596B2 (en) * 2001-11-01 2005-08-02 Nichia Corporation Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same
US6635503B2 (en) * 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
US6716654B2 (en) * 2002-03-12 2004-04-06 Opto Tech Corporation Light-emitting diode with enhanced brightness and method for fabricating the same
US20040012027A1 (en) * 2002-06-13 2004-01-22 Cree Lighting Company Saturated phosphor solid state emitter
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US6917057B2 (en) * 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
US6825559B2 (en) * 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
TWI226138B (en) * 2003-01-03 2005-01-01 Super Nova Optoelectronics Cor GaN-based LED vertical device structure and the manufacturing method thereof
US6786390B2 (en) * 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
US6806112B1 (en) * 2003-09-22 2004-10-19 National Chung-Hsing University High brightness light emitting diode
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004521494A (ja) * 2001-02-01 2004-07-15 クリー　インコーポレイテッド 光抽出用の改良を含む発光ダイオード及びその製造方法
WO2004010509A2 (en) * 2002-07-22 2004-01-29 Cree, Inc. Light emitting diode including barrier layers and manufacturing methods therefor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
US8617909B2 (en) 2004-07-02 2013-12-31 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US8858004B2 (en) 2005-12-22 2014-10-14 Cree, Inc. Lighting device
US8487337B2 (en) 2006-04-24 2013-07-16 Cree, Inc. Side view surface mount LED
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
JP2010153814A (ja) * 2008-12-24 2010-07-08 Seoul Opto Devices Co Ltd 複数の発光セルを有する発光素子及びその製造方法
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED

Also Published As

Publication number Publication date
TW200625690A (en) 2006-07-16
EP1792353A1 (en) 2007-06-06
KR20070046182A (ko) 2007-05-02
TWI312584B (en) 2009-07-21
US8513686B2 (en) 2013-08-20
EP1792353B1 (en) 2020-03-11
US20060060879A1 (en) 2006-03-23
KR20090099593A (ko) 2009-09-22
WO2006036582A1 (en) 2006-04-06

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