JP2008513984A - 表面発光型半導体レーザ装置、および表面発光型半導体レーザ装置の製造方法 - Google Patents
表面発光型半導体レーザ装置、および表面発光型半導体レーザ装置の製造方法 Download PDFInfo
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Abstract
Description
図2は、ここに説明した表面発光型半導体レーザの第2実施例の概略的断面図である。
図3は、ここに説明した表面発光型半導体レーザ装置の第1実施例の概略的断面図である。
図4は、ここに説明した表面発光型半導体レーザ装置の第2実施例の概略的断面図である。
図5は、ここに説明した表面発光型半導体レーザ装置の第3実施例の概略的断面図である。
図6は、ここに説明した表面発光型半導体レーザ装置の第4実施例の概略的断面図である。
図7は、ここに説明した表面発光型半導体レーザ装置の、支持体の上にある実施例の概略的断面図である。
図8は、ここに説明した表面発光型半導体レーザ装置の、支持体の上にある別の実施例の概略的断面図である。
Claims (13)
- 表面発光型半導体レーザ装置であって、
・少なくとも1つの表面発光型半導体レーザ(21)を有し、
該表面発光型半導体レーザは垂直型エミッタ(1)と少なくとも1つのポンピングビーム源(2)を備え、
当該垂直型エミッタとポンピングビーム源は、並置されてモノリシックに共通のサブストレート(13)に集積されており、
・さらに、前記半導体レーザ(21)と熱接触する熱伝導エレメント(18)と、支持体(27)に取り付けるために設けられた取付け面(28)とを有する、ことを特徴とする半導体レーザ装置。 - 請求項1記載の半導体レーザ装置であって、
熱伝導エレメント(18)は導電性である半導体レーザ装置。 - 請求項1または2記載の半導体レーザ装置であって、
熱伝導エレメント(18)は、半導体レーザ(21)を電気的に接触接続するのに適する半導体レーザ装置。 - 請求項1から3までのいずれか一項記載の半導体レーザ装置であって、
熱伝導エレメント(18)は、以下の材料の1つを含む:銅、ダイヤモンド、銀、Al2O3、AlN、SiC、BN、銅ダイヤモンド、半導体レーザ装置。 - 請求項1から4までのいずれか一項記載の半導体レーザ装置であって、
熱伝導エレメント(18)と半導体レーザ(21)との間には、耐熱性の付着部が存在する半導体レーザ装置。 - 請求項1から5までのいずれか一項記載の半導体レーザ装置であって、
半導体レーザ(21)の、サブストレートとは反対側の表面は、熱伝導エレメント(18)と接続されている半導体レーザ装置。 - 請求項1から5までのいずれか一項記載の半導体レーザ装置であって、
サブストレート(13)は少なくとも1つの切欠部を有し、該切欠部は熱伝導エレメント(18)を含む半導体レーザ装置。 - 請求項7記載の半導体レーザ装置であって、
切欠部はサブストレート(13)にエッチングされている半導体レーザ装置。 - 請求項7または8記載の半導体レーザ装置であって、
熱伝導エレメント(18)は切欠部に電気的に析出される半導体レーザ装置。 - 請求項1から9までのいずれか一項記載の半導体レーザ装置であって、
ポンピングビーム源(2)は少なくとも1つのエッチングされた共振器ファセット(15)を有する半導体レーザ装置。 - 以下のステップを有する表面発光型半導体レーザ装置の製造方法であって、
a) 複数の表面発光型半導体レーザ(21)を備える半導体ディスクを作製し、
該表面発光型半導体レーザ(21)は、それぞれ1つの垂直型エミッタ(1)と少なくとも1つのポンピングビーム源(2)を有し、
当該垂直型エミッタとポンピングビーム源は、並置されてモノリシックに共通のサブストレート(13)に集積されており、
b) 伝熱性ディスク(18)を作製し、
c) 表面発光型半導体レーザ(21)の、サブストレート(13)とは反対側の表面を伝熱性ディスク(18)とハンダ法によって接続し、
d) 当該接続体を個別化する、ことを特徴とする方法。 - 請求項11記載の方法であって、
半導体ディスクを、ステップc)の前に個々の表面発光型半導体レーザ(21)に個別化する方法。 - 以下のステップを有する表面発光型半導体レーザ装置の製造方法であって、
・複数の表面発光型半導体レーザ(21)を作製し、
該表面発光型半導体レーザ(21)は、それぞれ1つの垂直型エミッタ(1)と少なくとも1つのポンピングビーム源(2)を有し、
当該垂直型エミッタとポンピングビーム源は、並置されてモノリシックに共通のサブストレート(13)に集積されており、
・半導体レーザ(21)毎に、サブストレート(13)の、半導体レーザに対向する側に切欠部をエッチングプロセスによって形成し、
・熱伝導エレメント(18)を切欠部に電気的に析出し、
・構成体を個別化する、ことを特徴とする方法。
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DE102004045949 | 2004-09-22 | ||
PCT/DE2005/001655 WO2006032252A1 (de) | 2004-09-22 | 2005-09-20 | Seitlich optisch gepumpter oberflächenemittierender halbleiterlaser auf einer wärmesenke |
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DE102006017294A1 (de) * | 2005-12-30 | 2007-07-05 | Osram Opto Semiconductors Gmbh | Optisch pumpbare Halbleitervorrichtung |
DE102006017293A1 (de) * | 2005-12-30 | 2007-07-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung |
DE102008009108A1 (de) * | 2008-02-14 | 2009-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser |
DE102008048903B4 (de) | 2008-09-25 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil |
DE102010045390A1 (de) | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils |
DE102012111358A1 (de) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
DE102015106712A1 (de) | 2015-04-30 | 2016-11-03 | Osram Opto Semiconductors Gmbh | Anordnung mit einem Substrat und einem Halbleiterlaser |
KR102384228B1 (ko) | 2015-09-30 | 2022-04-07 | 삼성전자주식회사 | 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자 |
DE102017108050B4 (de) * | 2017-04-13 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterstrahlungsquelle |
US10374386B1 (en) * | 2018-06-07 | 2019-08-06 | Finisar Corporation | Chip on carrier |
CN109449748A (zh) * | 2018-12-26 | 2019-03-08 | 北京航天情报与信息研究所 | 一种半导体器件及其制造方法 |
US10684414B1 (en) * | 2019-01-29 | 2020-06-16 | Ciene Corporation | Interconnect between different multi-quantum well waveguides in a semiconductor photonic integrated circuit |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0321090A (ja) * | 1989-06-16 | 1991-01-29 | Res Dev Corp Of Japan | 面発光型半導体レーザ |
JP2000058965A (ja) * | 1998-08-17 | 2000-02-25 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及び半導体レーザ素子 |
JP2000261088A (ja) * | 1999-03-05 | 2000-09-22 | Hitachi Ltd | 発光素子 |
JP2004111976A (ja) * | 2002-09-19 | 2004-04-08 | Osram Opto Semiconductors Gmbh | 光学的にポンピングされる半導体レーザ装置 |
JP2004247465A (ja) * | 2003-02-13 | 2004-09-02 | Sharp Corp | 酸化物半導体発光素子 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422901A (en) | 1993-11-15 | 1995-06-06 | Motorola, Inc. | Semiconductor device with high heat conductivity |
JPH1051065A (ja) | 1996-08-02 | 1998-02-20 | Matsushita Electron Corp | 半導体レーザ装置 |
JPH10335383A (ja) | 1997-05-28 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US6285702B1 (en) * | 1999-03-05 | 2001-09-04 | Coherent, Inc. | High-power external-cavity optically-pumped semiconductor laser |
US5991318A (en) | 1998-10-26 | 1999-11-23 | Coherent, Inc. | Intracavity frequency-converted optically-pumped semiconductor laser |
DE10026734A1 (de) | 2000-05-30 | 2001-12-13 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
DE10108079A1 (de) | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
US6888871B1 (en) | 2000-07-12 | 2005-05-03 | Princeton Optronics, Inc. | VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system |
DE10040450B4 (de) | 2000-08-18 | 2008-07-10 | Osram Opto Semiconductors Gmbh | Halbleiterlaserbauelement mit einem Kühlelement |
US6636539B2 (en) | 2001-05-25 | 2003-10-21 | Novalux, Inc. | Method and apparatus for controlling thermal variations in an optical device |
DE10147888A1 (de) * | 2001-09-28 | 2003-04-24 | Osram Opto Semiconductors Gmbh | Optisch gepumpter vertikal emittierender Halbleiterlaser |
CN100508310C (zh) | 2003-11-13 | 2009-07-01 | 奥斯兰姆奥普托半导体有限责任公司 | 光学泵浦的半导体激光器设备 |
DE102004015446B4 (de) | 2003-12-30 | 2010-08-05 | Osram Opto Semiconductors Gmbh | Wärmesenke für ein diskretes Halbleiterbauelement und Verfahren zu dessen Herstellung sowie elektronische Komponente |
-
2005
- 2005-09-20 DE DE502005006760T patent/DE502005006760D1/de active Active
- 2005-09-20 KR KR1020077008753A patent/KR101217590B1/ko not_active IP Right Cessation
- 2005-09-20 CN CNA2005800312040A patent/CN101023568A/zh active Pending
- 2005-09-20 WO PCT/DE2005/001655 patent/WO2006032252A1/de active Application Filing
- 2005-09-20 DE DE112005002919T patent/DE112005002919A5/de not_active Withdrawn
- 2005-09-20 US US11/663,617 patent/US7817695B2/en not_active Expired - Fee Related
- 2005-09-20 EP EP05806660A patent/EP1792373B1/de not_active Expired - Fee Related
- 2005-09-20 JP JP2007531594A patent/JP2008513984A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0321090A (ja) * | 1989-06-16 | 1991-01-29 | Res Dev Corp Of Japan | 面発光型半導体レーザ |
JP2000058965A (ja) * | 1998-08-17 | 2000-02-25 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及び半導体レーザ素子 |
JP2000261088A (ja) * | 1999-03-05 | 2000-09-22 | Hitachi Ltd | 発光素子 |
JP2004111976A (ja) * | 2002-09-19 | 2004-04-08 | Osram Opto Semiconductors Gmbh | 光学的にポンピングされる半導体レーザ装置 |
JP2004247465A (ja) * | 2003-02-13 | 2004-09-02 | Sharp Corp | 酸化物半導体発光素子 |
Also Published As
Publication number | Publication date |
---|---|
CN101023568A (zh) | 2007-08-22 |
KR101217590B1 (ko) | 2013-01-03 |
US7817695B2 (en) | 2010-10-19 |
KR20070050992A (ko) | 2007-05-16 |
EP1792373B1 (de) | 2009-03-04 |
US20090201958A1 (en) | 2009-08-13 |
DE112005002919A5 (de) | 2007-08-30 |
EP1792373A1 (de) | 2007-06-06 |
DE502005006760D1 (de) | 2009-04-16 |
WO2006032252A1 (de) | 2006-03-30 |
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