JP2008508702A5 - - Google Patents

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Publication number
JP2008508702A5
JP2008508702A5 JP2007523020A JP2007523020A JP2008508702A5 JP 2008508702 A5 JP2008508702 A5 JP 2008508702A5 JP 2007523020 A JP2007523020 A JP 2007523020A JP 2007523020 A JP2007523020 A JP 2007523020A JP 2008508702 A5 JP2008508702 A5 JP 2008508702A5
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JP
Japan
Prior art keywords
light
region
film
light emitting
avalanche
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JP2007523020A
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English (en)
Japanese (ja)
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JP2008508702A (ja
JP5069559B2 (ja
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Priority claimed from PCT/EP2005/008213 external-priority patent/WO2006010618A1/en
Publication of JP2008508702A publication Critical patent/JP2008508702A/ja
Publication of JP2008508702A5 publication Critical patent/JP2008508702A5/ja
Application granted granted Critical
Publication of JP5069559B2 publication Critical patent/JP5069559B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007523020A 2004-07-28 2005-07-28 Ｃｍｏｓをモノリシックに集積した光素子 Expired - Fee Related JP5069559B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59165804P 2004-07-28 2004-07-28
US60/591,658 2004-07-28
PCT/EP2005/008213 WO2006010618A1 (en) 2004-07-28 2005-07-28 Photonic devices monolithically integrated with cmos

Publications (3)

Publication Number Publication Date
JP2008508702A JP2008508702A (ja) 2008-03-21
JP2008508702A5 true JP2008508702A5 (enExample) 2012-05-17
JP5069559B2 JP5069559B2 (ja) 2012-11-07

Family

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Family Applications (1)

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JP2007523020A Expired - Fee Related JP5069559B2 (ja) 2004-07-28 2005-07-28 Ｃｍｏｓをモノリシックに集積した光素子

Country Status (5)

Country Link
US (2) US8963169B2 (enExample)
EP (1) EP1782481A1 (enExample)
JP (1) JP5069559B2 (enExample)
CN (1) CN101002326B (enExample)
WO (1) WO2006010618A1 (enExample)

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US9874693B2 (en) 2015-06-10 2018-01-23 The Research Foundation For The State University Of New York Method and structure for integrating photonics with CMOs
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