JP2008508700A - パッシベーション層を備えた半導体素子および該半導体素子の製造方法 - Google Patents
パッシベーション層を備えた半導体素子および該半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000002161 passivation Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000003795 desorption Methods 0.000 claims description 10
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 68
- 238000005530 etching Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 229910005542 GaSb Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000002156 adsorbate Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
・溶剤(アセトン、イソプロパノール)を用いた洗浄
・水性のNH4F溶剤を用いた処理ならびに脱イオン水(DI水)を用いた洗浄
・脱イオン水洗浄を用いたHClクリーニング
・酸素プラズマ処理
・脱イオン水洗浄を用いたクエン酸エッチング
・脱イオン水洗浄を用いたHClクリーニング
レジストマスクおよびエッチング残留物が完全に除去された後、メサ構造化されたウェハが再び分子線エピタキシ装置に送り込まれる。表面における吸着物(水)を除去するためにウェハを加熱した後、メサ上および側縁上の酸化層が熱により脱着される。この酸化物脱着はアンチモン安定化により行われる。シェーディング作用を回避する目的で、このプロセスステップにおいてウェハを回転させる。酸化物の脱着はほぼ500°C付近の温度で始まる。ウェハの温度は徐々に540°Cまで高められる。その際、この温度はパイロメータによって測定される。この温度においてウェハは5分間、既述のアンチモン安定化の作用を受け続け、その目的は表面に存在する酸化層をできるかぎり完全に脱着させることにある。
Al0.5Ga0.5As0.93Sb0.07層を酸化から保護する目的で、ウェハはパッシベーション層4の成長後、MBE装置から取り出され、200nmの厚さの窒化ケイ素層5が酸化保護層として設けられる。
Claims (25)
- AlxGayIn1-x-yAszSb1-zを含有し、ここでパラメータx, y, zは、バンドギャップが350meVよりも小さくなるよう選定されている半導体素子において、
メサ構造を有しており、該メサ構造の少なくとも1つの側面に、少なくとも部分的にAlnGa1-nAsmSb1-mを含有するパッシベーション層が設けられており、ここでパラメータnは0.4〜1の範囲から選択され、パラメータmは0〜1の範囲から選択されることを特徴とする、半導体素子。 - 請求項1記載の半導体素子において、
活性領域には、InAsならびにGayIn1-ySbを含有し約2nm〜約10nmの層厚をもつ個別層が含まれていることを特徴とする半導体素子。 - 請求項1または2記載の半導体素子において、
前記パラメータmは0〜0.15の範囲から選択されていることを特徴とする半導体素子。 - 請求項3記載の半導体素子において、
前記パラメータmは0.07であることを特徴とする半導体素子。 - 請求項1から4のいずれか1項記載の半導体素子において、
前記パラメータnは0.5〜0.85の範囲から選択されていることを特徴とする半導体素子。 - 請求項1から5のいずれか1項記載の半導体素子において、
前記パッシベーション層はp形ドーピングまたはn形ドーピングされていることを特徴とする半導体素子。 - 請求項6記載の半導体素子において、
前記パッシベーション層はベリリウムまたはテルルによってドーピングされていることを特徴とする半導体素子。 - 請求項1から7のいずれか1項記載の半導体素子において、
バイポーラ半導体素子を有することを特徴とする半導体素子。 - 請求項8記載の半導体素子において、
バイポーラホトダイオードを有することを特徴とする半導体素子。 - 請求項1から9のいずれか1項記載の半導体素子において、
前記パッシベーション層の上に少なくとも部分的に酸化保護層が設けられていることを特徴とする半導体素子。 - 請求項10記載の半導体素子において、
前記酸化保護層はSipNqおよび/またはSiO2および/またはSiOpNqを有することを特徴とする半導体素子。 - 請求項1から11のいずれか1項記載の半導体素子において、
メサ構造における少なくとも1つの側面は(010)方位、(0−10)方位、(100)方位または(−100)方位にあることを特徴とする半導体素子。 - 請求項1から12のいずれか1項記載の半導体素子において、
前記パッシベーション層により覆われていない面領域に金属コンタクトが設けられていることを特徴とする半導体素子。 - 半導体素子の製造方法において、
AlxGayIn1-x-yAszSb1-zを含有し350meVよりも小さいバンドギャップを有する材料から成る少なくとも1つの活性半導体領域を形成するステップと、
該活性半導体領域にメサ構造を形成するステップと、
AlnGa1-nAsmSb1-mを含有するパッシベーション層を、該メサ構造における少なくとも1つの側面に形成するステップを有しており、ここでパラメータnを0.4〜1の範囲から選択し、パラメータmを0〜1の範囲から選択することを特徴とする、
半導体素子の製造方法。 - 請求項14記載の方法において、
前記活性半導体領域を、約2nm〜約10nmの厚さでありInAsを含有する少なくとも1つの層から形成し、該活性半導体層の上に、約2nm〜約10nmの厚さでありGayIn1-ySbを含有する少なくとも1つの層を設けることを特徴とする方法。 - 請求項14または15記載の方法において、
前記パラメータmを0〜0.15の範囲から選択することを特徴とする方法。 - 請求項14から16のいずれか1項記載の方法において、
前記パラメータnを0.5〜0.85の範囲から選択することを特徴とする方法。 - 請求項14から17のいずれか1項記載の方法において、
前記パッシベーション層にドーパントを加えることを特徴とする半導体素子。 - 請求項14から18のいずれか1項記載の方法において、
前記活性半導体領域とは反対側の前記パッシベーション層の面に酸化保護層を設けることを特徴とする方法。 - 請求項14から19のいずれか1項記載の方法において、
前記活性半導体領域および/または前記パッシベーション層を分子線エピタキシにより形成することを特徴とする方法。 - 請求項14から20のいずれか1項記載の方法において、
前記メサ構造をホトリソグラフィにより形成することを特徴とする半導体素子。 - 請求項14から21のいずれか1項記載の方法において、
前記パッシベーション層を形成する前に、前記活性半導体領域の表面を熱脱着によりクリーニングすることを特徴とする方法。 - 請求項22記載の方法において、
約500°C〜約620°Cの温度で前記熱による脱着を行うことを特徴とする方法。 - 請求項22または23記載の方法において、
前記熱脱着をアンチモン安定化と同時に行うことを特徴とする方法。 - 請求項14から24のいずれか1項記載の方法において、
前記半導体層に赤外線ホトダイオードアレイをもたせることを特徴とする方法。
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PCT/EP2005/008075 WO2006013034A1 (de) | 2004-07-30 | 2005-07-25 | Halbleiterbauelement mit einer passivierungsschicht und verfahren zu seiner herstellung |
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JP2009242124A (ja) * | 2008-03-28 | 2009-10-22 | Asahi Kasei Electronics Co Ltd | 半導体基板 |
JP2011216625A (ja) * | 2010-03-31 | 2011-10-27 | Asahi Kasei Electronics Co Ltd | 化合物半導体素子、および、その製造方法 |
WO2021149500A1 (ja) * | 2020-01-20 | 2021-07-29 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換装置の製造方法、及び光電変換装置 |
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DE102007059538B4 (de) * | 2007-12-11 | 2009-08-20 | Lumics Gmbh | Passivierung einer Resonator-Endfläche eines Halbleiter-Lasers mit einem Halbleiter-Übergitter |
BR112015023736A2 (pt) * | 2013-03-15 | 2017-07-18 | First Solar Inc | método para manufaturar dispositivo fotovoltaico |
CN110176507B (zh) * | 2019-05-31 | 2020-08-14 | 厦门市三安集成电路有限公司 | 一种台面pin的钝化结构和光电二极管及其制备方法 |
DE102020001842A1 (de) * | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmiges photonisches III-V-Halbleiterbauelement |
DE102020001843A1 (de) * | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende InGaAs-Halbleiterleistungsdiode |
DE102020001837B3 (de) * | 2020-03-20 | 2021-08-26 | Azur Space Solar Power Gmbh | Stapelförmiges photonisches lll-V-Halbleiterbauelement |
CN117153914A (zh) * | 2022-06-30 | 2023-12-01 | 浙江晶科能源有限公司 | 光伏电池及其制造方法、光伏组件 |
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KR101197831B1 (ko) | 2012-11-05 |
US20070278626A1 (en) | 2007-12-06 |
EP1771879A1 (de) | 2007-04-11 |
DE102004037191B4 (de) | 2008-04-03 |
WO2006013034A1 (de) | 2006-02-09 |
US7745908B2 (en) | 2010-06-29 |
KR20070053201A (ko) | 2007-05-23 |
JP4950883B2 (ja) | 2012-06-13 |
EP1771879B1 (de) | 2019-01-02 |
DE102004037191A1 (de) | 2006-02-16 |
CA2572691C (en) | 2013-09-17 |
CA2572691A1 (en) | 2006-02-09 |
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