JP2008505046A5 - - Google Patents
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- Publication number
- JP2008505046A5 JP2008505046A5 JP2007519503A JP2007519503A JP2008505046A5 JP 2008505046 A5 JP2008505046 A5 JP 2008505046A5 JP 2007519503 A JP2007519503 A JP 2007519503A JP 2007519503 A JP2007519503 A JP 2007519503A JP 2008505046 A5 JP2008505046 A5 JP 2008505046A5
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- mold
- directional solidification
- silicon
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 35
- 230000008023 solidification Effects 0.000 claims 12
- 238000007711 solidification Methods 0.000 claims 12
- 238000001816 cooling Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 238000002844 melting Methods 0.000 claims 6
- 230000008018 melting Effects 0.000 claims 6
- 229920005591 polysilicon Polymers 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000012634 fragment Substances 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/883,644 US7141114B2 (en) | 2004-06-30 | 2004-06-30 | Process for producing a crystalline silicon ingot |
| PCT/US2005/023629 WO2006005018A2 (en) | 2004-06-30 | 2005-06-30 | Process for producing a crystalline silicon ingot |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008505046A JP2008505046A (ja) | 2008-02-21 |
| JP2008505046A5 true JP2008505046A5 (https=) | 2008-08-14 |
Family
ID=35512611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007519503A Pending JP2008505046A (ja) | 2004-06-30 | 2005-06-30 | 結晶シリコンインゴットの製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7141114B2 (https=) |
| EP (1) | EP1766107A4 (https=) |
| JP (1) | JP2008505046A (https=) |
| KR (1) | KR20070048180A (https=) |
| NO (1) | NO20070415L (https=) |
| WO (1) | WO2006005018A2 (https=) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006017622B4 (de) * | 2006-04-12 | 2008-03-27 | Schott Ag | Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium |
| JP2010504269A (ja) * | 2006-09-22 | 2010-02-12 | ユミコア ソシエテ アノニム | 液体ZnでのSiHCl3の還元によるSiの製造方法 |
| JP2008156166A (ja) * | 2006-12-25 | 2008-07-10 | Sumco Solar Corp | シリコンインゴットの鋳造方法および切断方法 |
| US20080257254A1 (en) * | 2007-04-17 | 2008-10-23 | Dieter Linke | Large grain, multi-crystalline semiconductor ingot formation method and system |
| JP5309539B2 (ja) * | 2007-07-12 | 2013-10-09 | 住友化学株式会社 | 精製シリコンの製造方法 |
| JP5125973B2 (ja) * | 2007-10-17 | 2013-01-23 | 住友化学株式会社 | 精製シリコンの製造方法 |
| US20090191336A1 (en) * | 2008-01-30 | 2009-07-30 | Mohan Chandra | Method and apparatus for simpified startup of chemical vapor deposition of polysilicon |
| TW200949027A (en) * | 2008-03-19 | 2009-12-01 | Gt Solar Inc | System and method for arranging heating element in crystal growth apparatus |
| US20090280050A1 (en) * | 2008-04-25 | 2009-11-12 | Applied Materials, Inc. | Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots |
| US20090289390A1 (en) * | 2008-05-23 | 2009-11-26 | Rec Silicon, Inc. | Direct silicon or reactive metal casting |
| US20100047148A1 (en) * | 2008-05-23 | 2010-02-25 | Rec Silicon, Inc. | Skull reactor |
| WO2010080918A2 (en) | 2009-01-07 | 2010-07-15 | Rec Silicon Inc | Solidification of molten material over moving bed of divided solid material |
| US8168123B2 (en) * | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
| TWI454309B (zh) * | 2009-04-20 | 2014-10-01 | Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd | 用於將反應排出氣體冷卻之方法及系統 |
| US8425855B2 (en) | 2009-04-20 | 2013-04-23 | Robert Froehlich | Reactor with silicide-coated metal surfaces |
| US8547121B2 (en) * | 2009-04-29 | 2013-10-01 | Silicor Materials Inc. | Quality control process for UMG-SI feedstock |
| JP5511945B2 (ja) * | 2009-04-29 | 2014-06-04 | シリコー マテリアルズ インコーポレイテッド | Umg−si材料精製のためのプロセス管理 |
| DE102010018287A1 (de) * | 2010-04-26 | 2011-10-27 | Crusible Gmbh | Verfahren und Vorrichtung zum Beladen eines Schmelztiegels mit Silizium |
| DE102010029741B4 (de) * | 2010-06-07 | 2013-02-28 | Solarworld Innovations Gmbh | Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle |
| JP5777336B2 (ja) * | 2010-12-28 | 2015-09-09 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 多結晶シリコン原料のリチャージ方法 |
| CN102021650B (zh) * | 2010-12-31 | 2012-06-06 | 常州天合光能有限公司 | 一种大型多晶锭的生产方法 |
| US20120260845A1 (en) * | 2011-04-14 | 2012-10-18 | Rec Silicon Inc | Polysilicon system |
| US9352389B2 (en) * | 2011-09-16 | 2016-05-31 | Silicor Materials, Inc. | Directional solidification system and method |
| CN102296354B (zh) * | 2011-09-19 | 2013-12-11 | 江西旭阳雷迪高科技股份有限公司 | 一种硅料的铸锭方法 |
| GB2494893A (en) * | 2011-09-21 | 2013-03-27 | Rec Wafer Pte Ltd | Loading silicon in a crucible |
| DE102012200994A1 (de) * | 2012-01-24 | 2013-07-25 | Wacker Chemie Ag | Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium |
| US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
| WO2014037965A1 (en) * | 2012-09-05 | 2014-03-13 | MEMC ELECTRONIC METERIALS S.p.A. | Method of loading a charge of polysilicon into a crucible |
| TWI643983B (zh) | 2013-03-14 | 2018-12-11 | 美商希利柯爾材料股份有限公司 | 定向凝固系統及方法 |
| TWI640327B (zh) * | 2013-11-14 | 2018-11-11 | 美商奧崔基尼克斯製藥公司 | 三酸甘油酯之固體組合物及其用途 |
| WO2017040420A1 (en) * | 2015-08-28 | 2017-03-09 | C.B. Fleet Company, Incorporated | Hemorrhoid preparation and sheets |
| CN106933119B (zh) * | 2015-12-30 | 2021-05-11 | 巴彦淖尔聚光硅业有限公司 | 多晶硅还原炉调功柜控制系统 |
| CN117103478B (zh) * | 2023-08-24 | 2025-12-30 | 西安奕斯伟材料科技股份有限公司 | 一种用于对不合格晶棒节段进行破碎的系统及方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4249988A (en) * | 1978-03-15 | 1981-02-10 | Western Electric Company, Inc. | Growing crystals from a melt by controlling additions of material thereto |
| US5116456A (en) | 1988-04-18 | 1992-05-26 | Solon Technologies, Inc. | Apparatus and method for growth of large single crystals in plate/slab form |
| JPH05139886A (ja) * | 1991-11-21 | 1993-06-08 | Toshiba Corp | 砒素化合物単結晶の製造方法 |
| JPH05254817A (ja) * | 1992-03-12 | 1993-10-05 | Kawasaki Steel Corp | 多結晶シリコン鋳塊の製造方法 |
| US5810934A (en) * | 1995-06-07 | 1998-09-22 | Advanced Silicon Materials, Inc. | Silicon deposition reactor apparatus |
| US5588993A (en) * | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| US5814148A (en) * | 1996-02-01 | 1998-09-29 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| JP3892496B2 (ja) * | 1996-04-22 | 2007-03-14 | Sumco Techxiv株式会社 | 半導体単結晶製造方法 |
| US5961944A (en) * | 1996-10-14 | 1999-10-05 | Kawasaki Steel Corporation | Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell |
| JP3189764B2 (ja) * | 1997-09-29 | 2001-07-16 | 住友金属工業株式会社 | シリコン単結晶原料の溶解方法 |
| US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
| US6039801A (en) * | 1998-10-07 | 2000-03-21 | Memc Electronic Materials, Inc. | Continuous oxidation process for crystal pulling apparatus |
| US6284040B1 (en) * | 1999-01-13 | 2001-09-04 | Memc Electronic Materials, Inc. | Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| JP2002170780A (ja) * | 2000-12-01 | 2002-06-14 | Sharp Corp | ルツボおよびそれを使用した多結晶シリコンの成長方法 |
| JP4258973B2 (ja) * | 2000-12-26 | 2009-04-30 | 三菱マテリアル株式会社 | 結晶シリコン製造装置 |
| JP4747267B2 (ja) * | 2001-09-28 | 2011-08-17 | 三菱マテリアル株式会社 | 衝撃緩和型多結晶シリコン |
| JP2003104711A (ja) * | 2001-09-28 | 2003-04-09 | Mitsubishi Materials Polycrystalline Silicon Corp | ルツボ型多結晶シリコン |
| US6875269B2 (en) * | 2001-11-13 | 2005-04-05 | Advanced Silicon Materials Llc | System for increasing charge size for single crystal silicon production |
| US20030101924A1 (en) * | 2001-11-15 | 2003-06-05 | Memc Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| US6605149B2 (en) * | 2002-01-11 | 2003-08-12 | Hemlock Semiconductor Corporation | Method of stacking polycrystalline silicon in process for single crystal production |
| JP4077712B2 (ja) * | 2002-10-29 | 2008-04-23 | 京セラ株式会社 | シリコンの鋳造方法 |
-
2004
- 2004-06-30 US US10/883,644 patent/US7141114B2/en not_active Expired - Fee Related
-
2005
- 2005-06-30 JP JP2007519503A patent/JP2008505046A/ja active Pending
- 2005-06-30 WO PCT/US2005/023629 patent/WO2006005018A2/en not_active Ceased
- 2005-06-30 EP EP05768970A patent/EP1766107A4/en not_active Withdrawn
- 2005-06-30 KR KR1020077002420A patent/KR20070048180A/ko not_active Ceased
-
2007
- 2007-01-23 NO NO20070415A patent/NO20070415L/no not_active Application Discontinuation
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