JP2008505046A5 - - Google Patents

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Publication number
JP2008505046A5
JP2008505046A5 JP2007519503A JP2007519503A JP2008505046A5 JP 2008505046 A5 JP2008505046 A5 JP 2008505046A5 JP 2007519503 A JP2007519503 A JP 2007519503A JP 2007519503 A JP2007519503 A JP 2007519503A JP 2008505046 A5 JP2008505046 A5 JP 2008505046A5
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JP
Japan
Prior art keywords
polycrystalline silicon
mold
directional solidification
silicon
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007519503A
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English (en)
Japanese (ja)
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JP2008505046A (ja
Filing date
Publication date
Priority claimed from US10/883,644 external-priority patent/US7141114B2/en
Application filed filed Critical
Publication of JP2008505046A publication Critical patent/JP2008505046A/ja
Publication of JP2008505046A5 publication Critical patent/JP2008505046A5/ja
Pending legal-status Critical Current

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JP2007519503A 2004-06-30 2005-06-30 結晶シリコンインゴットの製造方法 Pending JP2008505046A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/883,644 US7141114B2 (en) 2004-06-30 2004-06-30 Process for producing a crystalline silicon ingot
PCT/US2005/023629 WO2006005018A2 (en) 2004-06-30 2005-06-30 Process for producing a crystalline silicon ingot

Publications (2)

Publication Number Publication Date
JP2008505046A JP2008505046A (ja) 2008-02-21
JP2008505046A5 true JP2008505046A5 (https=) 2008-08-14

Family

ID=35512611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007519503A Pending JP2008505046A (ja) 2004-06-30 2005-06-30 結晶シリコンインゴットの製造方法

Country Status (6)

Country Link
US (1) US7141114B2 (https=)
EP (1) EP1766107A4 (https=)
JP (1) JP2008505046A (https=)
KR (1) KR20070048180A (https=)
NO (1) NO20070415L (https=)
WO (1) WO2006005018A2 (https=)

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US20080257254A1 (en) * 2007-04-17 2008-10-23 Dieter Linke Large grain, multi-crystalline semiconductor ingot formation method and system
JP5309539B2 (ja) * 2007-07-12 2013-10-09 住友化学株式会社 精製シリコンの製造方法
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US20090191336A1 (en) * 2008-01-30 2009-07-30 Mohan Chandra Method and apparatus for simpified startup of chemical vapor deposition of polysilicon
TW200949027A (en) * 2008-03-19 2009-12-01 Gt Solar Inc System and method for arranging heating element in crystal growth apparatus
US20090280050A1 (en) * 2008-04-25 2009-11-12 Applied Materials, Inc. Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots
US20090289390A1 (en) * 2008-05-23 2009-11-26 Rec Silicon, Inc. Direct silicon or reactive metal casting
US20100047148A1 (en) * 2008-05-23 2010-02-25 Rec Silicon, Inc. Skull reactor
WO2010080918A2 (en) 2009-01-07 2010-07-15 Rec Silicon Inc Solidification of molten material over moving bed of divided solid material
US8168123B2 (en) * 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
TWI454309B (zh) * 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
US8425855B2 (en) 2009-04-20 2013-04-23 Robert Froehlich Reactor with silicide-coated metal surfaces
US8547121B2 (en) * 2009-04-29 2013-10-01 Silicor Materials Inc. Quality control process for UMG-SI feedstock
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DE102010029741B4 (de) * 2010-06-07 2013-02-28 Solarworld Innovations Gmbh Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle
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CN102296354B (zh) * 2011-09-19 2013-12-11 江西旭阳雷迪高科技股份有限公司 一种硅料的铸锭方法
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US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
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TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
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