JP2008503857A5 - - Google Patents

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Publication number
JP2008503857A5
JP2008503857A5 JP2007516720A JP2007516720A JP2008503857A5 JP 2008503857 A5 JP2008503857 A5 JP 2008503857A5 JP 2007516720 A JP2007516720 A JP 2007516720A JP 2007516720 A JP2007516720 A JP 2007516720A JP 2008503857 A5 JP2008503857 A5 JP 2008503857A5
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JP
Japan
Prior art keywords
copolymer
ghz
conductor
insulator
cable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007516720A
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English (en)
Japanese (ja)
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JP5199664B2 (ja
JP2008503857A (ja
Filing date
Publication date
Priority claimed from US10/872,623 external-priority patent/US7122609B2/en
Application filed filed Critical
Publication of JP2008503857A publication Critical patent/JP2008503857A/ja
Publication of JP2008503857A5 publication Critical patent/JP2008503857A5/ja
Application granted granted Critical
Publication of JP5199664B2 publication Critical patent/JP5199664B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007516720A 2004-06-21 2005-06-15 改良された高速データ伝送ケーブル用絶縁体 Expired - Lifetime JP5199664B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/872,623 2004-06-21
US10/872,623 US7122609B2 (en) 2003-05-14 2004-06-21 High melt flow fluoropolymer
PCT/US2005/021244 WO2006009761A1 (en) 2004-06-21 2005-06-15 Insulation for an improved high-speed data transmission cable

Publications (3)

Publication Number Publication Date
JP2008503857A JP2008503857A (ja) 2008-02-07
JP2008503857A5 true JP2008503857A5 (https=) 2008-07-31
JP5199664B2 JP5199664B2 (ja) 2013-05-15

Family

ID=34972358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007516720A Expired - Lifetime JP5199664B2 (ja) 2004-06-21 2005-06-15 改良された高速データ伝送ケーブル用絶縁体

Country Status (5)

Country Link
US (4) US7122609B2 (https=)
EP (1) EP1759396A1 (https=)
JP (1) JP5199664B2 (https=)
CN (1) CN101065813B (https=)
WO (1) WO2006009761A1 (https=)

Families Citing this family (30)

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US7122609B2 (en) * 2003-05-14 2006-10-17 E. I. Du Pont De Nemours And Company High melt flow fluoropolymer
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US7795536B2 (en) * 2008-01-18 2010-09-14 Temp-Flex Cable, Inc. Ultra high-speed coaxial cable
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US7795539B2 (en) * 2008-03-17 2010-09-14 E. I. Du Pont De Nemours And Company Crush resistant conductor insulation
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EP2949700B1 (en) 2013-01-24 2018-04-18 Daikin Industries, Ltd. Composition, and method for producing foam molded material and electric wire
DK3256501T3 (en) 2015-02-12 2019-03-18 3M Innovative Properties Co TETRAFLUORETHYLEN / HEXAFLUORPROPYLEN COPOLYMERS INCLUDING PERFLUORAL COXYALKYL GROUPS AS PREPARATIONS AND METHODS OF PRODUCTION AND USE PROCEDURES
US10844152B2 (en) 2015-02-12 2020-11-24 3M Innovative Properties Company Tetrafluoroethylene and perfluorinated allyl ether copolymers
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CN107848180B (zh) * 2015-08-04 2019-10-18 Agc株式会社 氟树脂膜的制造方法
EP3500604B1 (en) 2016-08-17 2020-06-17 3M Innovative Properties Company Tetrafluoroethylene and perfluorinated allyl ether copolymers
KR102805006B1 (ko) 2019-08-26 2025-05-12 다이킨 고교 가부시키가이샤 축전체 및 가스킷
KR20220035470A (ko) 2019-08-26 2022-03-22 다이킨 고교 가부시키가이샤 비수 전해액 전지용 부재
EP4024576A4 (en) 2019-08-26 2023-11-22 Daikin Industries, Ltd. ELEMENT FOR BATTERIES WITH NON-AQUEOUS ELECTROLYTE SOLUTION
JP7174293B2 (ja) * 2020-09-30 2022-11-17 ダイキン工業株式会社 共重合体、射出成形体、被圧縮部材および被覆電線
JP7104362B1 (ja) 2021-02-26 2022-07-21 ダイキン工業株式会社 共重合体、成形体、射出成形体および被覆電線
KR20230130735A (ko) 2021-02-26 2023-09-12 다이킨 고교 가부시키가이샤 사출 성형체
JP7174307B2 (ja) 2021-02-26 2022-11-17 ダイキン工業株式会社 射出成形体およびその製造方法
KR102867567B1 (ko) 2021-02-26 2025-10-14 다이킨 고교 가부시키가이샤 관 조인트 및 관 조인트의 제조 방법
KR20230129191A (ko) 2021-02-26 2023-09-06 다이킨 고교 가부시키가이샤 사출 성형체 및 그 제조 방법
KR20230131269A (ko) 2021-02-26 2023-09-12 다이킨 고교 가부시키가이샤 사출 성형체 및 그 제조 방법
KR20230131268A (ko) 2021-02-26 2023-09-12 다이킨 고교 가부시키가이샤 사출 성형체 및 그 제조 방법
US12373361B2 (en) * 2022-09-01 2025-07-29 Advanced Micro Devices, Inc. Systems, methods, and devices for advanced memory technology

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