JP2008502155A - イメージセンサの金属配線 - Google Patents
イメージセンサの金属配線 Download PDFInfo
- Publication number
- JP2008502155A JP2008502155A JP2007515578A JP2007515578A JP2008502155A JP 2008502155 A JP2008502155 A JP 2008502155A JP 2007515578 A JP2007515578 A JP 2007515578A JP 2007515578 A JP2007515578 A JP 2007515578A JP 2008502155 A JP2008502155 A JP 2008502155A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- substrate
- extending
- copper
- sealing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 52
- 239000002184 metal Substances 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052802 copper Inorganic materials 0.000 abstract description 16
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (2)
- (a)基板と、
(b)前記基板の境界部を形成する前記基板の周辺に延伸した封止要素と、
(c)前記境界部の内側に含まれた二つ以上の別々の層で前記基板に延伸した二つの金属配線と、
(d)前記封止要素の外側に配置された第1の導電要素と、
(e)前記二つの金属配線を接続し前記封止要素に延伸した一つ以上の第2の導電要素であって耐酸化性を有し前記金属配線を前記第1の導電要素に接続する実質的に非酸化性の金属からなる導電要素と、
を備えることを特徴とする集積回路。 - 請求項1の集積回路において、
前記第2の導電要素はタングステンからなることを特徴とする集積回路。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57703604P | 2004-06-04 | 2004-06-04 | |
US60/577,036 | 2004-06-04 | ||
US11/048,975 | 2005-02-02 | ||
US11/048,975 US8072066B2 (en) | 2004-06-04 | 2005-02-02 | Metal interconnects for integrated circuit die comprising non-oxidizing portions extending outside seal ring |
PCT/US2005/019429 WO2005122255A1 (en) | 2004-06-04 | 2005-06-02 | Metal interconnects for image sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008502155A true JP2008502155A (ja) | 2008-01-24 |
JP4856064B2 JP4856064B2 (ja) | 2012-01-18 |
Family
ID=35446790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007515578A Active JP4856064B2 (ja) | 2004-06-04 | 2005-06-02 | イメージセンサの金属配線 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8072066B2 (ja) |
EP (1) | EP1751799B1 (ja) |
JP (1) | JP4856064B2 (ja) |
KR (1) | KR101210176B1 (ja) |
CN (1) | CN1965407B (ja) |
DE (1) | DE602005027688D1 (ja) |
TW (1) | TWI385756B (ja) |
WO (1) | WO2005122255A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10790272B2 (en) * | 2017-08-02 | 2020-09-29 | Qualcomm Incorporated | Manufacturability (DFM) cells in extreme ultra violet (EUV) technology |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS617656A (ja) * | 1984-06-22 | 1986-01-14 | Toshiba Corp | マルチチップパッケ−ジ |
JP2001023937A (ja) * | 1999-05-20 | 2001-01-26 | Texas Instr Inc <Ti> | 半導体デバイス内のスクライブストリートシール及び製造方法 |
US20030071280A1 (en) * | 2001-08-20 | 2003-04-17 | Ta-Lee Yu | Method of fabricating seal-ring structure with ESD protection |
JP2003203913A (ja) * | 2002-01-09 | 2003-07-18 | Matsushita Electric Ind Co Ltd | 半導体装置および半導体チップ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100205301B1 (ko) * | 1995-12-26 | 1999-07-01 | 구본준 | 금속배선구조 및 형성방법 |
TW311242B (en) * | 1996-12-12 | 1997-07-21 | Winbond Electronics Corp | Die seal structure with trench and manufacturing method thereof |
US6365958B1 (en) * | 1998-02-06 | 2002-04-02 | Texas Instruments Incorporated | Sacrificial structures for arresting insulator cracks in semiconductor devices |
JP2000232104A (ja) * | 1999-02-09 | 2000-08-22 | Sanyo Electric Co Ltd | チップサイズパッケージ |
US20030089997A1 (en) * | 2001-11-09 | 2003-05-15 | Egon Mergenthaler | Tiedowns connected to kerf regions and edge seals |
US6861754B2 (en) * | 2003-07-25 | 2005-03-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device with anchor type seal ring |
US7053453B2 (en) * | 2004-04-27 | 2006-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate contact and method of forming the same |
US7223673B2 (en) * | 2004-07-15 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device with crack prevention ring |
US20060267154A1 (en) * | 2005-05-11 | 2006-11-30 | Pitts Robert L | Scribe seal structure for improved noise isolation |
US7224042B1 (en) * | 2005-06-29 | 2007-05-29 | Actel Corporation | Integrated circuit wafer with inter-die metal interconnect lines traversing scribe-line boundaries |
-
2005
- 2005-02-02 US US11/048,975 patent/US8072066B2/en active Active
- 2005-06-02 WO PCT/US2005/019429 patent/WO2005122255A1/en not_active Application Discontinuation
- 2005-06-02 JP JP2007515578A patent/JP4856064B2/ja active Active
- 2005-06-02 CN CN2005800181947A patent/CN1965407B/zh active Active
- 2005-06-02 DE DE602005027688T patent/DE602005027688D1/de active Active
- 2005-06-02 EP EP05756194A patent/EP1751799B1/en active Active
- 2005-06-02 KR KR1020067025523A patent/KR101210176B1/ko active IP Right Grant
- 2005-06-03 TW TW094118288A patent/TWI385756B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS617656A (ja) * | 1984-06-22 | 1986-01-14 | Toshiba Corp | マルチチップパッケ−ジ |
JP2001023937A (ja) * | 1999-05-20 | 2001-01-26 | Texas Instr Inc <Ti> | 半導体デバイス内のスクライブストリートシール及び製造方法 |
US20030071280A1 (en) * | 2001-08-20 | 2003-04-17 | Ta-Lee Yu | Method of fabricating seal-ring structure with ESD protection |
JP2003203913A (ja) * | 2002-01-09 | 2003-07-18 | Matsushita Electric Ind Co Ltd | 半導体装置および半導体チップ |
Also Published As
Publication number | Publication date |
---|---|
TW200614423A (en) | 2006-05-01 |
DE602005027688D1 (de) | 2011-06-09 |
KR20070031320A (ko) | 2007-03-19 |
EP1751799A1 (en) | 2007-02-14 |
US20050269706A1 (en) | 2005-12-08 |
EP1751799B1 (en) | 2011-04-27 |
KR101210176B1 (ko) | 2012-12-07 |
CN1965407B (zh) | 2011-11-30 |
JP4856064B2 (ja) | 2012-01-18 |
WO2005122255A1 (en) | 2005-12-22 |
CN1965407A (zh) | 2007-05-16 |
TWI385756B (zh) | 2013-02-11 |
US8072066B2 (en) | 2011-12-06 |
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