JP2006253422A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2006253422A JP2006253422A JP2005068208A JP2005068208A JP2006253422A JP 2006253422 A JP2006253422 A JP 2006253422A JP 2005068208 A JP2005068208 A JP 2005068208A JP 2005068208 A JP2005068208 A JP 2005068208A JP 2006253422 A JP2006253422 A JP 2006253422A
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- H—ELECTRICITY
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】 光電変換素子33及びトランジスタ38からなる画素22と、この画素22に接続される多層配線36とを有し、多層配線36に接続されたパッド電極25が積層膜(362′、363′)により形成されて成る。
【選択図】 図2
Description
ワイヤボンディング時のボンディング温度は、90℃〜200℃の範囲がよい。好ましくは150℃とすることができる。90℃未満であると金属細線45がパッド電極25に接合し難い。200℃を越えるとカラーフィルタ46やマイクロレンズ47等の有機材の耐熱温度を越えてしまい好ましくない。
さらには、3層目の配線363上に別途アルミニウム膜を形成した積層膜でパッド電極を形成することも可能である。
また、パッド電極25に対して金属細線45を、90℃〜200℃のボンディング温度でワイヤボンディングすることにより、金属細線45のパッド電極25への接合を十分し、且つカラーフィルタ46。マイクロレンズ47にダメージを与えることがない。
Claims (4)
- 光電変換素子及びトランジスタからなる画素と、
該画素に接続される多層配線とを有し、
前記多層配線に接続されたパッド電極が積層膜により形成されて成る
ことを特徴とする固体撮像装置。 - 前記パッド電極が多層配線のうちの、複数層の配線による積層膜で形成されて成る
ことを特徴とする請求項1記載の固体撮像装置。 - 前記パッド電極の合計の膜厚が400nm〜1200nmである
ことを特徴とする請求項1記載の固体撮像装置。 - 前記パッド電極に金属細線が90℃〜200℃のボンディング温度でワイヤボンディングされて成る
ことを特徴とする請求項1記載の固体撮像装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005068208A JP4904702B2 (ja) | 2005-03-10 | 2005-03-10 | 固体撮像装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005068208A JP4904702B2 (ja) | 2005-03-10 | 2005-03-10 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006253422A true JP2006253422A (ja) | 2006-09-21 |
JP4904702B2 JP4904702B2 (ja) | 2012-03-28 |
Family
ID=37093580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005068208A Expired - Fee Related JP4904702B2 (ja) | 2005-03-10 | 2005-03-10 | 固体撮像装置 |
Country Status (1)
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JP (1) | JP4904702B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7745896B2 (en) | 2007-05-17 | 2010-06-29 | Dongbu Hitek Co., Ltd. | Image sensor and method of manufacturing the same |
US7755158B2 (en) | 2007-06-12 | 2010-07-13 | Dongbu Hitek Co., Ltd. | Image sensor and method for manufacturing thereof |
JP2011035399A (ja) * | 2009-07-29 | 2011-02-17 | Taiwan Semiconductor Manufacturing Co Ltd | AlCuプロセスのCMOSイメージセンサーの大ビアボンディングパッドのアプリケーション |
JP2012174951A (ja) * | 2011-02-23 | 2012-09-10 | Sony Corp | 半導体装置の製造方法、半導体装置、および電子機器 |
US8680635B2 (en) | 2009-07-29 | 2014-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor big via bonding pad application for AICu process |
JP2015103598A (ja) * | 2013-11-22 | 2015-06-04 | 富士フイルム株式会社 | 有機機能層付き基板およびその製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163868A (ja) * | 1992-09-28 | 1994-06-10 | Sanyo Electric Co Ltd | ホトダイオード内蔵半導体装置 |
JP2001094085A (ja) * | 1999-09-21 | 2001-04-06 | Nec Corp | 固体撮像装置及びその製造方法 |
JP2001196415A (ja) * | 2000-01-14 | 2001-07-19 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
JP2003264281A (ja) * | 2002-03-11 | 2003-09-19 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2003273341A (ja) * | 2002-03-14 | 2003-09-26 | Tobu Denshi Kk | イメージセンサ用半導体素子の製造方法 |
JP2005012189A (ja) * | 2003-05-28 | 2005-01-13 | Canon Inc | 光電変換装置およびその製造方法 |
-
2005
- 2005-03-10 JP JP2005068208A patent/JP4904702B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163868A (ja) * | 1992-09-28 | 1994-06-10 | Sanyo Electric Co Ltd | ホトダイオード内蔵半導体装置 |
JP2001094085A (ja) * | 1999-09-21 | 2001-04-06 | Nec Corp | 固体撮像装置及びその製造方法 |
JP2001196415A (ja) * | 2000-01-14 | 2001-07-19 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
JP2003264281A (ja) * | 2002-03-11 | 2003-09-19 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2003273341A (ja) * | 2002-03-14 | 2003-09-26 | Tobu Denshi Kk | イメージセンサ用半導体素子の製造方法 |
JP2005012189A (ja) * | 2003-05-28 | 2005-01-13 | Canon Inc | 光電変換装置およびその製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7745896B2 (en) | 2007-05-17 | 2010-06-29 | Dongbu Hitek Co., Ltd. | Image sensor and method of manufacturing the same |
US7755158B2 (en) | 2007-06-12 | 2010-07-13 | Dongbu Hitek Co., Ltd. | Image sensor and method for manufacturing thereof |
JP2011035399A (ja) * | 2009-07-29 | 2011-02-17 | Taiwan Semiconductor Manufacturing Co Ltd | AlCuプロセスのCMOSイメージセンサーの大ビアボンディングパッドのアプリケーション |
US8502335B2 (en) | 2009-07-29 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor big via bonding pad application for AlCu Process |
US8680635B2 (en) | 2009-07-29 | 2014-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor big via bonding pad application for AICu process |
JP2012174951A (ja) * | 2011-02-23 | 2012-09-10 | Sony Corp | 半導体装置の製造方法、半導体装置、および電子機器 |
US8786089B2 (en) | 2011-02-23 | 2014-07-22 | Sony Corporation | Manufacturing method of semiconductor device, semiconductor device and electronic apparatus |
US9099534B2 (en) | 2011-02-23 | 2015-08-04 | Sony Corporation | Manufacturing method of semiconductor device, semiconductor device and electronic apparatus |
JP2015103598A (ja) * | 2013-11-22 | 2015-06-04 | 富士フイルム株式会社 | 有機機能層付き基板およびその製造方法 |
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Publication number | Publication date |
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JP4904702B2 (ja) | 2012-03-28 |
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