JP2008311258A - 低誘電率の誘電材料の損傷を低減したマスキング材料の除去方法 - Google Patents

低誘電率の誘電材料の損傷を低減したマスキング材料の除去方法 Download PDF

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JP2008311258A
JP2008311258A JP2007154764A JP2007154764A JP2008311258A JP 2008311258 A JP2008311258 A JP 2008311258A JP 2007154764 A JP2007154764 A JP 2007154764A JP 2007154764 A JP2007154764 A JP 2007154764A JP 2008311258 A JP2008311258 A JP 2008311258A
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chemical reactant
masking material
dielectric constant
low dielectric
readable medium
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JP2007154764A
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Japanese (ja)
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JP2008311258A5 (https=
Inventor
Zhilin Huang
ファン ジーリン
Siyi Li
リー シリ
Qingjun Zhou
ゾウ キンギュン
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2008311258A publication Critical patent/JP2008311258A/ja
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JP2007154764A 2007-06-12 2007-06-12 低誘電率の誘電材料の損傷を低減したマスキング材料の除去方法 Pending JP2008311258A (ja)

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JP2007154764A JP2008311258A (ja) 2007-06-12 2007-06-12 低誘電率の誘電材料の損傷を低減したマスキング材料の除去方法

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JP2007154764A JP2008311258A (ja) 2007-06-12 2007-06-12 低誘電率の誘電材料の損傷を低減したマスキング材料の除去方法

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JP2008311258A true JP2008311258A (ja) 2008-12-25
JP2008311258A5 JP2008311258A5 (https=) 2010-07-22

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JP2007154764A Pending JP2008311258A (ja) 2007-06-12 2007-06-12 低誘電率の誘電材料の損傷を低減したマスキング材料の除去方法

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101289A (ja) * 2003-09-25 2005-04-14 Tokyo Electron Ltd プラズマアッシング方法
WO2005122226A1 (en) * 2004-06-03 2005-12-22 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
WO2006122119A2 (en) * 2005-05-10 2006-11-16 Lam Research Corporation Method for resist strip in presence of regular low k and/or porous low k dielectric materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101289A (ja) * 2003-09-25 2005-04-14 Tokyo Electron Ltd プラズマアッシング方法
WO2005122226A1 (en) * 2004-06-03 2005-12-22 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
WO2006122119A2 (en) * 2005-05-10 2006-11-16 Lam Research Corporation Method for resist strip in presence of regular low k and/or porous low k dielectric materials

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