JP2008306169A - 磁気抵抗素子、磁気抵抗素子の製造方法及び磁性多層膜作成装置 - Google Patents

磁気抵抗素子、磁気抵抗素子の製造方法及び磁性多層膜作成装置 Download PDF

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Publication number
JP2008306169A
JP2008306169A JP2008110434A JP2008110434A JP2008306169A JP 2008306169 A JP2008306169 A JP 2008306169A JP 2008110434 A JP2008110434 A JP 2008110434A JP 2008110434 A JP2008110434 A JP 2008110434A JP 2008306169 A JP2008306169 A JP 2008306169A
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Prior art keywords
layer
ferromagnetic
sputtering
antiferromagnetic
substrate
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English (en)
Japanese (ja)
Inventor
Koji Tsunekawa
孝二 恒川
Jayapurawira David
ジャヤプラウィラ ダビッド
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Canon Anelva Corp
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Canon Anelva Corp
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Priority to JP2008110434A priority Critical patent/JP2008306169A/ja
Priority to US12/114,468 priority patent/US8174800B2/en
Priority to CN200810095658XA priority patent/CN101304070B/zh
Publication of JP2008306169A publication Critical patent/JP2008306169A/ja
Pending legal-status Critical Current

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  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP2008110434A 2007-05-07 2008-04-21 磁気抵抗素子、磁気抵抗素子の製造方法及び磁性多層膜作成装置 Pending JP2008306169A (ja)

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JP2008110434A JP2008306169A (ja) 2007-05-07 2008-04-21 磁気抵抗素子、磁気抵抗素子の製造方法及び磁性多層膜作成装置
US12/114,468 US8174800B2 (en) 2007-05-07 2008-05-02 Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
CN200810095658XA CN101304070B (zh) 2007-05-07 2008-05-07 磁阻元件、其制造方法和磁性多层膜制造装置

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JP2007122367 2007-05-07
JP2008110434A JP2008306169A (ja) 2007-05-07 2008-04-21 磁気抵抗素子、磁気抵抗素子の製造方法及び磁性多層膜作成装置

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JP2009291333A Division JP2010123978A (ja) 2007-05-07 2009-12-22 磁気抵抗素子の製造方法

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JP2009291333A Pending JP2010123978A (ja) 2007-05-07 2009-12-22 磁気抵抗素子の製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109786545A (zh) * 2017-11-13 2019-05-21 Tdk株式会社 磁阻元件、其制造方法和磁传感器
CN115101284A (zh) * 2022-08-25 2022-09-23 季华实验室 一种磁性多层膜及其制备方法和应用

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CN102082018B (zh) * 2009-11-26 2013-10-16 中国科学院物理研究所 一种磁性多层膜单元及其制备和磁矩翻转方法
US8508221B2 (en) * 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
US8325448B2 (en) * 2011-02-11 2012-12-04 Headway Technologies, Inc. Pinning field in MR devices despite higher annealing temperature
US20130065075A1 (en) * 2011-09-12 2013-03-14 Klemens Pruegl Magnetoresistive spin valve layer systems
JP2020068214A (ja) * 2017-02-28 2020-04-30 Tdk株式会社 強磁性多層膜、磁気抵抗効果素子、及び強磁性多層膜を製造する方法
CN110491990A (zh) * 2019-08-13 2019-11-22 上海新微技术研发中心有限公司 磁存储器件
CN112750944A (zh) * 2019-10-30 2021-05-04 上海磁宇信息科技有限公司 磁性隧道结结构及磁性随机存储器

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JPH08111315A (ja) * 1994-10-07 1996-04-30 Mitsui Mining & Smelting Co Ltd 磁気抵抗効果多層膜
JP2002167661A (ja) * 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置
JP2003133614A (ja) * 2001-02-01 2003-05-09 Toshiba Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、および磁気記録再生装置
JP2003258335A (ja) * 2002-03-04 2003-09-12 Matsushita Electric Ind Co Ltd トンネル磁気抵抗効果素子の製造方法
JP2003304012A (ja) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd トンネル磁気抵抗効果素子
JP2004153284A (ja) * 2001-06-26 2004-05-27 Matsushita Electric Ind Co Ltd 磁気抵抗素子の製造方法
JP2005203774A (ja) * 2001-04-24 2005-07-28 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子とこれを用いた磁気抵抗効果型磁気ヘッド、磁気記録装置および磁気抵抗効果型メモリー装置
JP2006080116A (ja) * 2004-09-07 2006-03-23 Canon Anelva Corp 磁気抵抗効果素子およびその製造方法
JP2006156893A (ja) * 2004-12-01 2006-06-15 Tdk Corp 磁気メモリ
JP2006165265A (ja) * 2004-12-07 2006-06-22 Sony Corp 記憶素子及びメモリ
JP2007073638A (ja) * 2005-09-05 2007-03-22 Sony Corp 記憶素子及びメモリ

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US5528440A (en) * 1994-07-26 1996-06-18 International Business Machines Corporation Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element
US6226159B1 (en) * 1999-06-25 2001-05-01 International Business Machines Corporation Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors
JP3473016B2 (ja) * 1999-08-25 2003-12-02 日本電気株式会社 強磁性トンネル接合素子と磁気ヘッドと磁気メモリ
JP4693292B2 (ja) * 2000-09-11 2011-06-01 株式会社東芝 強磁性トンネル接合素子およびその製造方法
JP3607265B2 (ja) * 2001-06-26 2005-01-05 松下電器産業株式会社 磁気抵抗素子
JP3737986B2 (ja) * 2001-07-25 2006-01-25 アルプス電気株式会社 交換結合膜と前記交換結合膜を用いた磁気検出素子
JP2003324225A (ja) * 2002-04-26 2003-11-14 Nec Corp 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子
JP2004047583A (ja) * 2002-07-09 2004-02-12 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子とこれを用いた磁気ヘッドおよび磁気メモリならびに磁気記録装置
JP2005223193A (ja) * 2004-02-06 2005-08-18 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、ヘッドアームアセンブリ、ヘッドスタックアセンブリ、およびハードディスク装置
JP4661230B2 (ja) * 2005-01-21 2011-03-30 ソニー株式会社 記憶素子及びメモリ
JP4008478B2 (ja) * 2005-07-13 2007-11-14 Ｔｄｋ株式会社 磁界検出素子、基体、ウエハ、ヘッドジンバルアセンブリ、ハードディスク装置、および磁界検出素子の製造方法
JP2007027493A (ja) * 2005-07-19 2007-02-01 Nec Corp 磁気抵抗効果素子およびその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111315A (ja) * 1994-10-07 1996-04-30 Mitsui Mining & Smelting Co Ltd 磁気抵抗効果多層膜
JP2002167661A (ja) * 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置
JP2003133614A (ja) * 2001-02-01 2003-05-09 Toshiba Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、および磁気記録再生装置
JP2005203774A (ja) * 2001-04-24 2005-07-28 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子とこれを用いた磁気抵抗効果型磁気ヘッド、磁気記録装置および磁気抵抗効果型メモリー装置
JP2004153284A (ja) * 2001-06-26 2004-05-27 Matsushita Electric Ind Co Ltd 磁気抵抗素子の製造方法
JP2003258335A (ja) * 2002-03-04 2003-09-12 Matsushita Electric Ind Co Ltd トンネル磁気抵抗効果素子の製造方法
JP2003304012A (ja) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd トンネル磁気抵抗効果素子
JP2006080116A (ja) * 2004-09-07 2006-03-23 Canon Anelva Corp 磁気抵抗効果素子およびその製造方法
JP2006156893A (ja) * 2004-12-01 2006-06-15 Tdk Corp 磁気メモリ
JP2006165265A (ja) * 2004-12-07 2006-06-22 Sony Corp 記憶素子及びメモリ
JP2007073638A (ja) * 2005-09-05 2007-03-22 Sony Corp 記憶素子及びメモリ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109786545A (zh) * 2017-11-13 2019-05-21 Tdk株式会社 磁阻元件、其制造方法和磁传感器
CN109786545B (zh) * 2017-11-13 2023-08-01 Tdk株式会社 磁阻元件、其制造方法和磁传感器
CN115101284A (zh) * 2022-08-25 2022-09-23 季华实验室 一种磁性多层膜及其制备方法和应用
CN115101284B (zh) * 2022-08-25 2022-12-20 季华实验室 一种磁性多层膜及其制备方法和应用

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CN101304070B (zh) 2010-11-10
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