JP2008300741A - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
- Publication number
- JP2008300741A JP2008300741A JP2007147164A JP2007147164A JP2008300741A JP 2008300741 A JP2008300741 A JP 2008300741A JP 2007147164 A JP2007147164 A JP 2007147164A JP 2007147164 A JP2007147164 A JP 2007147164A JP 2008300741 A JP2008300741 A JP 2008300741A
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- Prior art keywords
- ion implantation
- solid
- state imaging
- manufacturing
- imaging device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000003384 imaging method Methods 0.000 title claims abstract description 25
- 238000005468 ion implantation Methods 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 150000002500 ions Chemical class 0.000 claims abstract description 17
- 238000002513 implantation Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 24
- 230000007547 defect Effects 0.000 abstract description 13
- 239000000725 suspension Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 43
- 238000009792 diffusion process Methods 0.000 description 36
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000005489 elastic deformation Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】半導体基板にフォトダイオード層をイオン注入により埋め込み形成する工程と、このフォトダイオード層上にシールド層をイオン注入により埋め込み形成する工程を含む固体撮像装置の製造方法のうち、少なくともシールド層を形成するイオン注入工程において、このイオン注入工程期間に少なくとも1回以上のイオン注入工程休止期間を設けることを特徴とする固体撮像装置の製造方法。
【選択図】図5
Description
Claims (4)
- 半導体基板にフォトダイオード層をイオン注入により埋め込み形成する工程と、このフォトダイオード層上にシールド層をイオン注入により埋め込み形成する工程を含む固体撮像装置の製造方法のうち、少なくともシールド層を形成するイオン注入工程において、このイオン注入工程期間に少なくとも1回以上のイオン注入工程休止期間を設けることを特徴とする固体撮像装置の製造方法。
- イオン注入エネルギーは、イオン注入によって形成される半導体基板内イオン濃度分布のピーク値を示す深さがシールド層に存在し、かつ、このピーク値に対して80%の値であるイオン濃度を示す深さがシールド層上に形成される酸化膜内に存在するものであることを特徴とする請求項1に記載の固体撮像装置の製造方法。
- 前記各イオン注入工程のイオン注入エネルギーは、各回ほぼ同じエネルギー量であることを特徴とする請求項1に記載の固体撮像装置の製造方法。
- イオン注入工程終了後に、アニール工程を含むことを特徴とする請求項1に記載の固体撮像装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007147164A JP2008300741A (ja) | 2007-06-01 | 2007-06-01 | 固体撮像装置の製造方法 |
US12/130,057 US7718460B2 (en) | 2007-06-01 | 2008-05-30 | Solid state imaging apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007147164A JP2008300741A (ja) | 2007-06-01 | 2007-06-01 | 固体撮像装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008300741A true JP2008300741A (ja) | 2008-12-11 |
Family
ID=40088755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007147164A Pending JP2008300741A (ja) | 2007-06-01 | 2007-06-01 | 固体撮像装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7718460B2 (ja) |
JP (1) | JP2008300741A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012047947A (ja) * | 2010-08-26 | 2012-03-08 | Yamaha Corp | 音響用シートおよび音響用シートの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163971A (ja) * | 1992-11-27 | 1994-06-10 | Sharp Corp | 固体撮像装置の製造方法 |
JPH10135441A (ja) * | 1996-10-31 | 1998-05-22 | Toshiba Corp | 固体撮像装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6690423B1 (en) * | 1998-03-19 | 2004-02-10 | Kabushiki Kaisha Toshiba | Solid-state image pickup apparatus |
JP3576033B2 (ja) | 1999-03-31 | 2004-10-13 | 株式会社東芝 | 固体撮像装置 |
JP3688980B2 (ja) | 2000-06-28 | 2005-08-31 | 株式会社東芝 | Mos型固体撮像装置及びその製造方法 |
JP4868815B2 (ja) | 2005-10-12 | 2012-02-01 | シャープ株式会社 | 固体撮像装置およびその製造方法、電子情報機器 |
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2007
- 2007-06-01 JP JP2007147164A patent/JP2008300741A/ja active Pending
-
2008
- 2008-05-30 US US12/130,057 patent/US7718460B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163971A (ja) * | 1992-11-27 | 1994-06-10 | Sharp Corp | 固体撮像装置の製造方法 |
JPH10135441A (ja) * | 1996-10-31 | 1998-05-22 | Toshiba Corp | 固体撮像装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012047947A (ja) * | 2010-08-26 | 2012-03-08 | Yamaha Corp | 音響用シートおよび音響用シートの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7718460B2 (en) | 2010-05-18 |
US20080299696A1 (en) | 2008-12-04 |
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